ICELAND Ffa ehf. Husgagnahollin Bildshofda 20 IS-110 Reykjavik Tel. +354-5522522 E-mail: fifa@fifa.is www.fifa.is INDONESIA PT. Sumber Aneka Karya Abadi JL. Batu Ceper No. 2 B-C-E Jakarta 10120 Tel. +62-21-3854444 Fax. +62-21-3442617 E-mail: sakaindonesia@gmail.com IRAN Nowrouz Nia Mirdamad Ave.-Valiasr Ave. Eskan-Shopping Center No. 13 Eskan-Maxi-Cosi 19696 Tehran Tel. +378 Fax +702 E-mail: maxicosinia@yahoo.com IRELAND Dorel Ireland Ltd All n one Ltd 42 Western Parkway Business Park Lower ballymount Road Dublin 12, Ireland Tel. 353-(1)4294055 Fax 353-(1)4294010 ISRAEL Shesek Ltd. 28B Halechi Street Bnei Brak 51200 Tel. 133 Fax 136 E-mail: einatsh@shilav.com ITALIA Dorel Italia S.P.A. Via Verdi, Telgate (Bergamo) P.I. IT 02304040161 Tel. Fax. E-mail: info@it-dorel.com JAPAN GMP International Co. Ltd #4F, 1-19-3, Tomigaya, Shibuya-Ku Tokyo, #151-0063, Japan Tel. +Fax +LATVIA AS Greifto Prnu mnt. 139C 11317 Tallinn Tel. (6) 06 Fax. (6) 11 E-mail: greifto@datanet.ee

Potah Spona pro bezpenostn psy v aut Dvka pro bezpenostn psy erven chytky bezpenostnch ps auta Konstrukce sedaky Upnac pka bezpenostnho psu Tmen Spodek Napna bezpenostnho psu auta Nlepka s nvodem k pouit ECE znaka kvality Nvod k pouit Otvory pro bezpenostn psy Chrnie bezpenostnch ps Kotevn chytka chytka pro umstn kotevn chytky Utahovac popruh bezpenostnch ps Polohovac madlo Tlatko pro uvolnn bezpenostnch ps Systm ramennch bezpenostnch ps chytky pro ramenn bezpenostn psy (systm Y-bezpenostnch ps)

Legend

gba-priori-3-xp-0626-bw:gba-priori-3-xp-0626-bw

Pagina 7

RUS () - ECE ( )
BUL , , ( ) ( )

Pagina 8

Dear parents Congratulations on the purchase of your Maxi-Cosi Priori XP. Safety, comfort and user-friendliness have at all times played an important role in the development of the Maxi-Cosi Priori XP. This product meets the most stringent safety regulations.
Research shows that a high number of car safety seats are installed incorrectly. Therefore, please take the time to read through this instruction manual carefully. Your childs safety can only be guaranteed if this product is used according to these instructions. Continuous research by our development team, user tests and consumer reactions ensure that we are kept fully up-todate in the field of child safety. Therefore, if you have any questions concerning the use of the Maxi-Cosi Priori XP, please do not hesitate to contact us. Dorel Important: Read first! WARNING: Read this instruction manual carefully. Study the illustrations in this instruction manual carefully before use, and when installing the car seat. The Maxi-Cosi Priori XP is a safety product and is only safe when used according to the instructions. WARNING: The correct fitting of the seat belt is of vital importance for the safety of your child. The seat belt must be threaded along the red markings on the Maxi-Cosi Priori XP. See the Installation section and/or the sticker on the side of the Maxi-Cosi Priori XP. Never use another belt routing other than specified. WARNING: For the future use of the seat, it is important that you store the instruction manual in the space provided on the back of the Maxi-Cosi Priori XP. WARNING: Never leave your child unattended in the car. WARNING: Never use the Maxi-Cosi Priori XP on a seat equipped with a front airbag, as this can result in injury or death. This does not apply to so-called "side airbags". The Maxi-Cosi Priori XP must only be used on a forward facing seat that is fitted with an automatic 3-point safety belt, which is approved according to ECE R16 or an equivalent standard. The Maxi-Cosi Priori XP may be used on either the front or the back seat. However, we recommend that it is fitted on the back seat. The Maxi-Cosi Priori XP has been approved according to the strictest European safety standards (ECE R44/04) and is suitable for children weighing 9 to 18 kg (approx. age 9 months to 3,5 years). After an accident, the seat may become unsafe due to damage that is not immediately noticeable. It should therefore be replaced. The safety of the seat can only be guaranteed by the manufacturer if it is used by the original owner. We strongly advise that you never use a second-hand product, as you can never be sure what has happened to it. The belt pads are important for the safety of your child, therefore use them at all times. Ensure that all luggage and objects likely to cause injury in the event of an accident are secured properly. It is recommended that car safety seats not be used longer than 5 years after the date of purchase. The product properties may deteriorate due to ageing of the plastic and/or sunlight, without this being visibly apparent. The moving parts of the Maxi-Cosi Priori XP should not be lubricated in any way. WARNING: The manufacturer has taken into consideration the fact that car seats may cause indentations in the car upholstery. This is unavoidable, however, due to the prescribed safety standards, and because the car seat must be installed tightly in order to protect your child. Dorel is not liable for any damage that may occur to the car upholstery as a result of this. Other instructions The Maxi-Cosi Priori XP must not be used without the cover. Always use an original Maxi-Cosi Priori XP cover, as the cover contributes to the safety of the seat.

English

Pagina 9
The seat must always be secured with a seat belt, even when not in use. An unsecured seat may injure other passengers in the car in the event of an emergency stop. Ensure that the Maxi-Cosi Priori XP is not damaged by wedging it between or underneath heavy luggage, adjustable seats or by slamming the car door, etc. No alterations may be made to the Maxi-Cosi Priori XP, as this could affect part or the overall safety of the seat. Always cover the Maxi-Cosi Priori XP when the car is parked in the sun, as plastic and metal parts may become extremely hot and the fabric unnecessarily discoloured. In order to prevent damage to the cover, do not remove the logos. Always use the seat, even on short journeys, as this is when most accidents occur. Prior to purchase, check to make sure the seat fits properly in your car. Take short breaks on longer journeys so that your child has some freedom of movement. Set a good example and always wear your seat belt. Tell your child that he/she should never play with the belt buckle. Questions Contact your supplier or importer if you wish to make a warranty claim or have any other questions (see address list on the back of the instruction manual). The seat belt The Maxi-Cosi Priori XP may only be used with an automatic 3-point safety belt (01). The Maxi-Cosi Priori XP can be fitted safely in a forward-facing position on almost all seats in the car using the existing seat belts. However, on some seats, the belts are fitted so far forward that proper installation is not possible. If this is the case, try another seat. In some cases, the buckle of the car belt may be too long and therefore sits too high against the base of the MaxiCosi Priori XP. The Maxi-Cosi Priori XP can therefore not be fitted securely. If this is the case, choose another position in the car (02). Questions? Contact your supplier or importer. Four positions of the Maxi-Cosi Priori XP The Maxi-Cosi Priori XP may be used in four positions: Lift the adjusting handle under the front of the seat up (03) and push or pull the seat forwards or backwards (04). Release the adjusting handle in the desired position and push until you hear a distinct click. Before installing the Maxi-Cosi Priori XP, pull the seat towards you as far as possible (sleeping position) (05). Installing the Maxi-Cosi Priori XP Please read the "Seat Belt" section before installing the Maxi-Cosi Priori XP. Place the Maxi-Cosi Priori XP on the car seat in the sleeping position (05). Release the belt tensioner. To do so, push the tab under the handle downwards and open the handle. The handle will now visibly protrude from the base (06). The belt tensioner should no longer be positioned between the red belt hooks (07 7/ 07 4). Thread the seat belt between the shell and the base. Make sure that the lap belt section of the seat belt is threaded between the red hooks and the belt tensioner (08). Fasten the seat belt in the belt buckle of the car (08) and check to ensure the car seat belt is not twisted. The lap belt should now run under the red seat belt hooks (09) and the shoulder belt should run from the car seat buckle directly diagonally upwards. Place the shoulder belt in the belt clamp (10) on one side only and fasten it (11/1). IMPORTANT: The shoulder belt is now attached on the side of the roll-up mechanism only. The belt clamp is now locked. Next, push the Maxi-Cosi Priori XP firmly into the car seat (11/2) whilst at the same time pulling the shoulder belt

Instructions for use

Pagina 10
tight (11/3), so that the Maxi-Cosi Priori XP is securely in place. Check this! Now return the handle to its original position (click) making sure it rests against the base (12). The belt tensioner tightens the seat belt even further. The belt tensioner should now be positioned between both belt hooks on the lap belt (13). You can now adjust the shell of the Maxi-Cosi Priori XP into the desired position. Placing your child in the Maxi-Cosi Priori XP
Loosen the shoulder belts by pressing the release button and pulling the shoulder belts towards you (14). Important: Do not pull on the belt pads when doing so. Open the belt buckle (15) and drape the belts over the hooks on the shell (16). Pull the buckle forwards and hook the belt pad over lip (17). Position your child comfortably with his/her back against the shell (18) and make sure that there are no toys or other hard objects in the shell. Slide buckle tongue sections together and insert them into the buckle (19). Position the lap belt as low as possible to ensure the hips sit firmly in the seat. Pull the shoulder belts tight (20/1) and pull the remaining slack out of the belt system by pulling the belts tight using the adjuster belt (20/2). IMPORTANT! The tighter the belts fit around your child, the better the protection. You should be able to fit only one finger between the belts and your child. The textured side of the belt pads must be placed on your childs shoulders. The belts should never be twisted. If you are unable to click the buckle sections into the buckle, unblock the buckle by pressing the red button and try again. If you are not able to fasten the seat belt system properly or pull it tight, contact your supplier immediately. Do not use the Maxi-Cosi Priori XP under any circumstances! Adjusting the height of the shoulder belts The correct belt height of the shoulder belts is attained when the belt disappears into the shell slightly above the shoulder of the child. Make sure that the shoulder belts fit properly over the shoulders of the child (21). Loosen the shoulder belts by pressing the release button and pulling the shoulder belts towards you as far as possible (14) Important: Do not pull the belt pads when doing so. Lift up the flap on the cover by the shoulder belt slots (22). To make the adjustment easier, pull the shoulder belts on top of the belt pad forward into a loop, loosening them (23). Next, push the loop back through the opening (24). Slide the shoulder belt and the belt pad strap through the slot together into the next position (25). Make sure that the shoulder belt is positioned on top of the belt pad strap in the new position (26). Always do this on both sides. Pull the shoulder belts tight by pulling on the belts under the belt pads (26). Place the flap back in position and thread the belt pads through the correct slots in the flap and secure them with the Velcro (27). Check whether you are able to use the belts and ensure they are not twisted. Maintenance, removing the cover and belt pads Remove the Maxi-Cosi Priori XP from the car before carrying out any of the following. The seat may be cleaned with lukewarm water and a gentle soap. Do not use abrasive detergents. o The cover and the belt pads must be washed by hand at a maximum temperature of 30 C. Do not use a dryer. Also see washing instructions.

Pagina 11

The belt buckle may be cleaned with warm water. Do not lubricate. It is advisable to buy an extra cover when you purchase the Maxi-Cosi Priori XP, so that you can use the Maxi-Cosi Priori XP at all times, such as when the cover has to be cleaned (or dried). The design of the cover may differ.If the cover on your seat has Velcro on the side seam on the back (28), you can leave the entire belt system in place in the shell. You only need to open the Velcro and then follow the instructions for removing the cover. Removing the cover and belt pads Make sure that the seat buckle is locked in order to prevent the belts from twisting. The belt clamping handle must be locked, i.e. positioned against the base. Loosen the shoulder belts. See "Adjusting the height of the shoulder belts". Place the Maxi-Cosi Priori XP in the sleeping position and open the belt guard door (29). Remove the shoulder belts from the belt yoke (30). Tilt the clasp on the belt pad and pull it together with the shoulder belt through the belt slots. This is easiest to do in the uppermost vertical section (31). Remove both belt hooks by pushing the tab on the back of the seat downwards (32). Loosen the cover on all sides (33). Open the belt buckle. Pull the belts, belt pads, buckle sections and seat buckle through the openings in the cover. Now remove the cover. Important: Be careful when removing the cover around the edge of the release button (34). Slide the belt pads off the belts (35). Replacing the cover and belt pads First slide both buckle sections together and lock into the belt buckle. Slide the shoulder belts through the clean belt pads ensuring that the textured side of the belt pad is facing downwards. Push the shoulder belts through the large opening of the clasp. Important: Make sure the shoulder belts are on top of the belt pad strap (36). Open the buckle and feed the buckle, shoulder belts and buckle parts through the openings in the cover (37). Place the cover over the edges of the release button and around the adjusting handle and secure it onto the cover pins (38). "Click" both belt hooks into position (39) and check to make sure they are securely fastened. Secure the shoulder belt clasps in the belt slots at the desired height (40/41). Attach the shoulder belts to the belt yoke. Important: The red stitching on the shoulder belts and belt yoke must be facing the shell (42). If not, this means the belts are twisted. Close the belt guard door (43). Fasten the belt buckle and close the flap on the cover (44) and check the functioning of the adjustment system. Checklist Read through this checklist before every journey! Check to make sure the Maxi-Cosi Priori XP is securely fastened with the seat belt and that the clamping handle is locked. Check to make sure the shoulder belts are at the proper height. Check to make sure your child is fastened securely and that the buckle is locked properly. Check regularly that the belt in the Maxi-Cosi Priori XP is not damaged. If it is damaged, do not use the car seat under any circumstances and contact your supplier or importer (see address list on the back of the instruction manual). If you have any questions, please contact your supplier. Make sure that you have the following details on hand: - Serial number at the bottom of the orange sticker (on the back of the Maxi-Cosi Priori XP). - Make and type of vehicle and seat on which the Maxi-Cosi Priori XP is being used. - Your childs age and weight.

Pagina 12

Handy tips The belt tensioner does not open: Place the shell in the sleeping position first. The child sits on the belts when placed in the Maxi-Cosi Priori XP: Drape the belts over the belt hooks and hook belt pad over lip by release button. Warranty
We guarantee that this product was manufactured in accordance with the current European safety requirements and quality standards which are applicable to this product, and that this product is free from defects in workmanship and material at the time of purchase. During the production process the product was subjected to various quality checks. If this product, despite our efforts, shows a material/manufacturing fault within the warranty period of 24 months, (with normal use as described in the user instructions) we will comply with the warranty terms and conditions. In this case please contact your dealer. For extensive information on applying the warranty terms and conditions, you can contact the dealer or look on our website: www.maxi-cosi.com. The warranty is not valid in the following cases: In case of a use or purpose other than described in the manual. If the product is submitted for repair through a dealer that is not authorized by us. If the product is not supplied to the manufacturer with the original purchase receipt (via the retailer and/or importer). If repairs were carried out by third parties or a dealer that is not authorized by us. If the defect is the result of improper or careless use or maintenance, negligence or impact damage to the fabric cover and/or frame. If the parts show normal wear and tear that may be expected from daily use of a product (wheels, rotating and moving parts etc.) Date of effect: The warranty becomes effective on the date the product is purchased. Warranty term: The warranty period applies for a period of 24 consecutive months. The warranty only applies for the first owner and is not transferable. What to do in case of defects: After purchasing the product, keep the purchase receipt. The date of purchase must be clearly visible on the receipt. Should problems or defects arise please contact your retailer. Exchanging or taking back the product cannot be requested. Repairs do not give entitlement to extension of the warranty. Products that are returned directly to the manufacturer are not eligible for warranty.
This Warranty Clause conforms to European Directive 99/44/EG of 25 May 1999.

further determined to

be 2.74
0.32, respectively. Since 2a0 is larger then aSi, films below

biaxial strain

XRD and RBS the

trigonal

strain 8,
measured to be at maximum 2.80
0.30 %. A strong correlation between strain and wafer 1.5 %

misorientation

prevails. Trigonal strain values significantly higher than
in films with the unintentional wafer misorientation smaller than 0.1. In addition

wafers

of comparable miscut, the strain is constant for films with thicknesses up to 100 the critical thickness for strain relaxation to be

, indicating

The wafer misorientation leads to

stepped

wafer surface and

consequently misfit

Moreover RBS

dislocations

formed at every monolayer

were more

step in the

CoSi2 template [34].

strained

channeling dips

pronounced (i.e.

deeper)

films, which indicates better crystal quality. Since CoSi2 has

misfit of -1.2 %, i.

lattice parameter smaller than
Si, relaxation of the CoSi2 template

The best

increases the mismatch between CoSi and the

template.

condition for

CoSi is hence

without strain

relieving

dislocations. Since small wafer

relieving misfit

at interfacial

monolayer Steps [34],

CoSi with
miscut is therefore necessary for

A first order

growth of pseudomorphic
good crystal quality. exceeding
transition to the stable bulk

to 100

e-phase

for film thicknesses

20 occurred upon annealing the CsCl phase

200 C. The 175

transition could also
triggered by growing the CsCl phase thicker than

. This transition

observed by

rapidly vanishing

RHEED pattern. Additional confirmation for the transition to e-CoSi

obtained from the

appropriate spacing

Scherrer

rings observed by

derived. Film

transmission
electron diffraction where
lattice parameter of 4.44

morphology

STM exhibited

pronounced change

well, manifested in

transition.

vanishing

topographic

contrast due to buried Si surface
3.4. Electronic structure

integrated

ultraviolet shown in

photoelectron

spectroscopy

spectrum

21.2eV)

(CsCl)CoSi,

Figure 3.4, exhibits

transition is

distinct Fermi

indicating

to be metallic. The

accompanied by

at 1.1 eV for

striking change

of the spectrum with

broad metal 2>d

band emission

(CsCl)CoSi being

These three

replaced by peaks

located at 0.3, 1.1 and 2.5 eV for e-CoSi

(see Figure 3.4).

therefore characteristic for this
present in all e-CoSi films, and

Repeated

capped
with Si evidenced that the

pronounced peak

0.3 eV is not

surface effect.

from this

pronounced peak,

spectral features

8-phase

in agreement with

reported

UPS measurements of the stable bulk

phase [35,36].

comparison

the UPS spectrum of the

film after transformation to

CoSi2 (annealing

Mattheiss

to 600 C for about 5

minutes)

is also included

together

with DOS calculations

Hamann

correspondence

experiment

theory [32].

[37,38,39,40]
with other UPS spectra of of the monosilicide

relatively

are more

crystalline quality

phases, their peaks

in the UPS spectra the

broadened than in the observed features,

CoSi2 spectrum.

of states

In order to

quantitatively understand

experimentally

(DOS) calculations, using

have been carried out

parametrized

binding model,

for both monosilicide

by Miglio [41]

(Figure3.4b)).

binding energy [eV]

Figure 3.4: a) UPS spectrum (hv

structure grown onto

energy

eV) of

21.2 7
A thick CoSi film with the CsCl

after the

CoSi2 template,

and after

bulk stable e-CoSi

phase (annealing

Si before

at 250

C for 2

transformation to

CoSi2 (for

better temperature

stability,

the silicide

with 2

to 600 C for 2

minutes). b)
Calculated DOS of the monosilicide

phases by Miglio [41]

CoSi2 by

Mattheiss and Hamann

The relative

positions

of the main features of his calculations 0.8 eV in the absolute

present in the

measurements, but

discrepancy of nearly

is existent for the
monosilicides. This shift,

already reported

for the Fe silicides

is not understood

theoretically

up to date. This is

more was

embarrassing

since for

CoSi2 always good

agreement between theory and experiment
found. However, the calculations show

well of

metal since the Fermi level is located in

of rather

high density

metal d states.

antibonding

'quasigap'

EF separating bonding

states of Si

sp3 hybrids and metal 3d states. This quasigap was claimed by Tersoff

stabilizing

and Hamann to be crucial in

CoSi2 [37,39,40].

lies in
calculations of RuSi and RhSi
Jvanovskii showed that in RuSi

of low

(DOS) just below

due to

non-bonding

Ad states

For RhSi

other hand understood

is located

in the middle of the DOS

peak [42].
This shift of EF electron

also be

assuming rigid
conditions, where Rh having

than Ru. In fact,

than Ru has

states filled up to

higher energies

comparing

the DOS of

of E? is

(CsCl)CoSi displaced

states to

(Figure
with the DOS of and falls in

(CsCl)FeSi [27]

shows that the
higher energies Figure 3.4).
strong peak representing nonbonding metallic 3 d
be related to enhanced destabilization of this

phase [39,40,42]

and it
indicates that the material is

likely

magnetic [27].
This latter Statement is somewhat
delicate since in fact the band structure calculations with

spin polarized

bands should be be less and the

performed. Compared

(CsCl)FeSi
pseudomorphic (CsCl)CoSi phase should (100-200)
stable which indeed is manifested in the low transition temperature

instability

of thick films
found to be stable at least up to 900 in contrast to CoSi
maximum thickness of < 175

Stability

of the CsCl

of CoSi and FeSi

proposed by Miglio [41],

discussed in the

following. The CoSi bulk phase

could in

principle

direction i.e. with

5.6 % when the

orientation is rotated

around the
CoSi[-110]||Si[ll-2] [43]. During reported by

formation

precipitates
with this orientation have been

D'Anterroches

The lattice mismatch of pseudomorphic

with Silicon

the other hand amounts to

phase on Si(l 11)

epitaxial stabilization of the CsCl phase is mainly due

(relative

aSi/2).

Thus the

the fact that its lattice mismatch is much smaller than that of the bulk

But when

having
look at the Situation of FeSi

surprised

stable than

(CsCl)CoSi phase

because the former has

lattice mismatch r|

2 % and the

4.7 %. To elucidate this

topic, Miglio Figure
et al. calculated the total energy of the CoSi and

shown in For

function of relative difference from the Si
coherency, the energy of the s-phase (black circles) is lower than

of the CsCl structure

(black Squares) by about
0.75 eV per formula unit for CoSi and

0.54 eV for FeSi. The

occurrence
of the NaCl structure both in bulk and

form is

prevented by

internal

energy. When

only taking

into account elastic energy

contribution for

coherent interface, the

is the most stable

in both Systems. But

of FeSi

kinetic

phase diagram

could be established

showing

films with thicknesses below 15 remain

structurally

stable up to 500 C, apart

exhibiting

gradual change

stoichiometry

towards
temperature [44]. This in

the interface

turn cannot be understood in terms of elastic energy contributions of

since the energy

diagram of FeSi looks
very similar to that of CoSi
(Figure 3.5). Miglio then proposed

interface

to take into consideration energy contributions due to

bonding.

He argues that the energy of broken bonds at the interface from atoms of

available Si

been observed.
Since the used Substrates

(commercially

wafers)

slightly (0.1

misoriented relative to the nominal

the surface exhibits

structure with
step heights of one monolayer a/3[l 11]. They

690 -1500

therefore

spaced

distance of L

also observed

by STM. According to Bulle Lieuwma,

type is formed

at every

partial

dislocation with
vector of a/6 <112>
monolayer or bilayer step

in the silicide

1165 1169

st [%]

1.700.22 1.550.18 1.780.15 1.780.15

1.180.11

miscut

e,t, max

1.970.07 1.770.08 1.670.08 2.030.08 1.770.08
0.460.06 0.420.05 0.480.04

0.480.04

0.140.03 0.220.03
0.260.03 0.150.03 0.220.03

0.320.03

Table 4.1:
Si(l 11) Substrates. Indicated

is the nominal thickness

silicide, the angular distortion determined by RBS angular

measurements, the

tensile strain derived therefrom
elastic constants, the wafer misorientation

XRD and

finally
the maximum residual strain derived therefrom. For films with h the measured strain

corresponds practically

theoretical maximum strain

eMmx which

that the films

fully strained.

Assuming

that the

dislocations present

expected

due to the wafer
misorientation, the residual strain
in the direction of the steps

be calculated

The wafer misorientation for

set of

is listed in

Table 4.1,

angular misalignment.

by this method is

In the last column of the

table, the

maximum trigonal strain obtained

The maximum

listed.

strain shown in

misorientation for the various Substrates Matthews

(values

between 0.15 and

0.24).

theory of

only applied when

smaller than the maximum value,

one can

e.g. when misfit dislocations the measured values reached
present. From Figure 4.2 and Table 4.1

see, that

application as metal

permeable base

transistors

(MBT, PBT) [85,86,87,88].

Band structure

calculations, however, indicated that parallel
transport is only possible in (001) oriented
momentum conservation needed for the ballistic

Si/CoSi2/Si

[37]. Although

first devices

produced
Si(lll), successful Si(001)

remains used

fabrication of

metal base transistor

Buried

CoSi2 layers

buried in

intriguing challenge.

interconnects in

films formed

by implantation

actually

integrated circuit technology

e.g. in the

Digital
(DEC) [89]. Optical application

infrared detector

silicide heterostructures

tuneable

recently reported [90,91,92]

and will be the main

of the next
quality Si/CoSi2/Si(lll) synthesis (IBS) [93],

Si/CoSi2/Si(001)

heterostructures have

et al.

been grown

also called

mesotaxyl) by White

recently by

molecular beam

allotaxy^ (MBA) [95,96].

In these processes, the silicide
formed in the final thermal treatment that induces the coalescence of

CoSi2 precipitates

imbedded in the Silicon matrix into

continuous

layer. Although high quality
heterostructures have been fabricated

by IBS, the drawback

of this method is the
of dislocations and anneal

damage

produced during implantation

on a new

and the final

high temperature

Fathauer et al.

process, labeled

endotaxy*,

where Co,

deposited

buried

Si at low rates and

high temperatures,

diffuses

Si cap and grows

region [97]. Although noteworthy

results have been

obtained device

all these methods,

not well suited to form thin buried silicides with

quality.

of Si/CoSi2/Si heterostructures has
recently been reported by von

Knel onto

Si(lll) [53]

Via et al. onto Si

(001) [98].

that in order to

By analogy with epitaxy In Greek the prefix 'allo' means 'different1, indicating a possible difference Compound layer and the Substrate. 'endotaxy' refers to oriented growth within a Substrate rather than upon it.
in structure between the final

avoid three

-FeSi2

0.87eV)

[108,109,110].

Since the former two for

indirect

bandgap [111],

the latter is the most

promising candidate

optoelectronic applications

since evidence for

direct energy band gap of 0.87

0.89 eV

which suits well the transmission window of most used claimed

optical

fibers

Bost and Mahan

[112,113]. However, the
nature of the gap is still

controversial

since band

structure calculations

by Christensen [39]

indirect gap

absorption

by Giannini [114]

gave evidence for

few tens of meV

lower than the direct

is still

convincing proof of suitable photoelectric properties

FeSi2

lacking [110].
On the other hand metallic silicides detectors
Schottky barrier infrared (IR)

[115].

Silicide/silicon

barrier

detectors

photoexcitation

interface.

of metal electrons

the metal/silicon

(Schottky barrier)

PtSi/p-Si

SBD have

height
220 meV, the second lowest barrier

height of all

silicides known to date

and are,

therefore, well suited for infrared detection

the most established SBD

in the 3-5 um

wavelength

[117]. They represent
Alternative silicides of interest

and IrSi with cut

wavelengths

7.3 -12.4 um,

respectively [115,118,119,120].

It has been

before
of cobalt and nickel silicides

[121].

review of
Schottky barrier entirely

imaging technology,

The cutoff

of these SBD is

and Silicon

doping

only slightly

be varied

by the Schottky

effect which

rarely

exceeds

few tens of meV. The

resulting tuning rnge

responsivity change

Larger

rather small.

modulation

effects

semiconductor

heterostructures. The effective barrier

consequently

photoresponse

and cutoff which

formed

be tuned with

applied bias, because

potential barriers,

the Si valence and conduction band

edge and

externally applied bias,

greatly modified.

The flrst such
asymmetrical (two different metals)

Tunable Internal

Pahun and Badoz

Photoemission Sensor

(TIPS)

Pt/Si/ErSi2

in 1992
cutoff wavelength in 1993 the flrst

shifting

rnge between 1.4 and 5.0 metal

[90,122].

Our group then

symmetrical (both

material)

TIPS made with

epitaxial CoSi2/Si/CoSi2 heterostructures exhibiting Asymmetrical

cutoff

TIPS with
barrier Variation of 0.1 eV the

Ir/Si/ErSi2

French group, where the

shifted up to 6

[92,123].

symmetrical

heterostructures and

asymmetrical

These devices behave
differently compared to the Ir/Si/ErSi2

TIPS because of a

configuration. Although processed [115],
the fact that uniform focal

arrays of

conventional SBD
their drawback is the lack of

responsivity

cutoff wavelength control.

could open the way to

Integration

of TIPS focal

arrays with

existing Si technology

resolved IR

imaging, covering

the whole spectrum of
existing Schottky detectors.,

response

i.e. from 1

to above

Further the

uniformity

in TIPS.

imposes problems

in conventional SBD could be conventional SBD

electronically

adjusted operated

However, TIPS

only reasonably
liquid nitrogen temperature.

[124]. Rectifying metal

Braun in 1874 made the flrst Observation of rectifying contacts

semiconductor contacts

the central part of SBD and

Despite

the many theoretical and the

studies

published in the past,

universal

describing

physical

mechanism of Schottky Walter
barrier formation does not exist

[125].

The flrst model

Schottky in

1939 where the
"Schottky" barrier height
determined by the metal work function %

[126].

In nature the

d<X>/dx

certain semiconductor turned out to be smaller than
disagreement with the Schottky

Application of silicide

(e.g. [88]).

Mott rule

Bardeen in 1947 then

proposed

the presence of interface states

density,

slope parameter

S varies between S

0 and the

Mott value S

[127]. Moreover, empirical

rules to describe the

<E>
of transition metal silicides with the metal work function

Photoemission of

Charge

carriers from

metal film into Silicon may be divided into

elementary processes,

photon absorption in the metal

by free Charge carriers

transport of the photoexcited carriers towards the interface

emission of the

photoexcited carriers

the interfacial barrier

! emission

/////,

silicide/n-type
Schematic electron energy band barrier. The three the barrier G>

elementary

processes involved in the

arrows.

energy.

indicated by

EF denotes the Fermi
Photons absorbed in the metal excite electrons in the silicide to states above the Fermi level

E? creating

holes below

Electrons

then found at

energies larger

than the Fermi
level and holes at whenever

smaller than

called hot electrons and hot holes,

E-EF kT. However,

it should be

pointed

out that the metal cannot be considered
Silicon heterostructures to runable infrared detector

to contain

hole gas because the short relaxation time limits the number flux of the
of carriers excited at of the
particular moment (Photon

process, which

relatively low).

Because

complex absorption

by quantum

about the

mechanics

the band structure of the silicide, be
only experimental Information

photoexcitation can

given.
thin film is uniform and is characterized

to be 20 nm,

absorption length.

spectral

For PtSi it

[142].

independent

about 8

rnge between 0.3 and 1 eV
CoSi2 the absorption length L is

The number of absorbed

rnge between 0.7 and 1 eV

[143].

photons depends
the film thickness and the incident IR

light wavelength,

since in thin metal films

multireflections

air/silicide

silicide/silicon

interfaces

enhanced has

in the metal films. In PtSi films the
wavelength dependent absorption

maximum of 30

60% at
silicide film thickness of 100 leads to
A [119,144]. Illumination

for front illumination

through the

(back illumination)

higher absorption than

medium

since Silicon acts

[144].

Antireflection

coatings

distinguish

former both metals

spacer
identical, thus the Schottky barrier heights
both sides of the Silicon

identical. In the latter

(asymmetrical)

the two metals

different, forming different

Schottky clarity

barriers and therefore

I discuss the

TIPS energy band

for different

bias conditions

separately.

6.4 the energy band

diagram of a symmetrical

bias condition

e.g. for

lowering,

devices,

bias and at

general

sketched.
due to the electric field at the interface

Numbers 1

to eq.

is not included in

4 indicate the four different

possible photoemission

processes, but will
also be used to refer to the
its energy band in bias. For
Schottky barrier ofthat particular process.

As the device and hence

Symmetrie,

electric and

photoelectric properties

by Symmetrie

bias the

photocurrents

1 and 2
3 and 4 cancel each other

condition

of equal currents. Thus the total

photocurrent will

Cbelow'

be rather low. When

small bias is

applied,

photoereated carriers

towards the

emitted above

for holes, since

increasing hole

energy is directed

bottom) Schottky
barriers 1 and 4, drift down the built

in electric field and

then coUected in the other silieide film

giving

rise to

photocurrent (see Figure

describe the effective barrier of processes 2 and 3

applied potential

difference Fand the

towards smaller

Schottky barrier (i.e.
the cutoff wavelengths of these processes

carriers emitted

shifted

wavelengths).

photoereated

potential

barrier have to

is much smaller. Thus when

plotting

the barrier of the

is observed

abrupt change

0.01 V

(see Figure 6.20).

Thus above

V^ photoemission
of holes in PtSi and below

photoemission of

sharply

electrons in PtSi is

predominant.
In fact the cutoff energy is switched

from 0.84 to 0.4 eV

corresponding to
shift in cutoff wavelength from 1.55 to

within

3.1 ^im. The
important point is that the switching happens

0.01 V.

Figure 6.20:

Barrier of the

dominating photocurrent (electron

bias measured at

and holes from

(W1439). changes

voltage of 0.170.01

abruptly.

The barrier for V<

Vm corresponds

the PtSi/n-Si

(process 1)

PtSi/p-Si Schottky barrier

(process 4).

for bias
the effective barrier for
in the PtSi is smaller than for electric field in the Silicon
electrons, this photocurrent

A small

layer increases
the effective barrier for these

holes.

having energies larger than

potential barrier can

the barrier and

be collected in the

requires that

the holes traverse the

1500 thick

ballistically,

potential maximum

Si/CoSi2 interface.

high electric fields

semiconductor, the

frequent scattering

event is the emission of

optical phonons [88], which determines

inelastic

also the Saturation
velocity. The optica! phonon

76 and

of hot electrons and holes in Si

A, respectively.

The average energy loss per
electron/hole collision is about 63 meV the

not to have

well defined etch

stop. Contacts with silicides have then only been made by hazard. Fabrication of operating
TIPS demanded therefore silicide
Silicon heterostructures of excellent

crystalline quality.

Hence,

lot of time

and characterization of silicides and silicide
Silicon heterostructures in order to improve the

process.

possible device

integration

technology, feasibility

Si(001) should

be demonstrated because this is
the Standard Substrate orientation.
However, the poor heterostructure quality achieved
did not allow for device fabrication.

operational requirement

The ratio

IR detector is

adequately large signal

to noise

(SfN).

defines

S/N for unit incident power and bandwidth at

wavelength,

dependence is
This leads to the definition of

an area

(6.14)
independent figure of merit, the detectivity

(6.15)

the contributions of fluctuations in
noises taken into account

background photon

rate and the Johnson noise

(thermal noise)

junction

resistance. With

Experimental data showed

Johnson noise of iV2

then that the Johnson noise limits the device

Performance.

4kT/R0 [168], the detectivity is then
(6-16) operating temperature

junction resistance,

and k the
Boltzmann constant. In Table 6.2 the

detectivity determined

TIPS at 1 eV and

bias is listed.

d[[im]

R0[GQ]

D^lO^cmHz^W-1]

2.3 2.6

Table 6.2:

resistance and

detectivity D', assuming dominating

determined at 77 K, 1

Johnson noise contribution, of four

eV and with

asymmetrical TIPS
bias. d is the diameter of the intermediate Silicon. In agreement
theory the detectivity D' is
independent figure of merit.
bias resistance correlates

roughly with d "2.

TIPS have
Comparable detectivities for Ir/Si/ErSi2

al. the

already been reported by Sagnes

[92] and

by Kurianski [121]. The detectivity

mainly determined by

specific zero

bias resistance

which has
exponential temperature dependence.

be obtained at low

Thus reasonable detectivities of TIPS and SBD

operating

temperatures, i.e.

ID through the

*>-'-

Then for forward bias
3 k T/e the thermionic diode current

Is exp

Werner, Appl. Phys. A 47, 291 (1988).
Schottky Diode Analysis II (Werner method)

the conductance G

dl^dV,

either be measured

calculated0,

Werner proposes the

following three different equations.

fi._|-a_GJW

"-M
Equation C) (E.6) equivalent

Rsli+ra

formula

(D.6).

From each

equation

the for

be extracted. With the

voltage, corrected
the series resistance, the Saturation current and therefrom the

then be

determined.

compare

selfconsistency of the evaluation.
In his paper, Werner concludes that

equation A) (E.4) yields

the most reliable and accurate values for the
Schottky barrier O, the ideality

and the series

resistance Rs.
The numerical determination of G from the /- Fcurve in order to get the real

requires

voltage steps typically of less than

curve.

PUBLICATIONS

PRESENTATIONS

Publications
Structural and electrical investigation
ofan epitaxial metallic FeSi2-phase on Si(lll)
Onda, J. Henz, E. Mller, H.
Knel, C. Schwarz, R. E. Pixley

64,197 (1991).

Surface study ofthin epitaxial CoSi^/SiflOO) layers by scanning tunneling microscopy

reflection high

Surf. Sei. 271, 355 (1992).
Surface stnictures ofstrained epitaxial CoSi^SiflOO) layers studied by scanning tunneling

microscopy

Stalder, C. Schwarz, H. Sirringhaus and H.

237,499 (1992).

Surface strueture ofultrathin, epitaxial CoSi2films on Si(100)

tunneling microscopy

by scanning

Sirringhaus,

Stalder, C. Schwarz and H.

65,113 (1992).

Application of epitaxial CoSi^Si/CoS^
heterostruetures to tuneable

Schottky-barrier

Schwarz, U. Schrer, P. Sutter, R. Stalder, N. Onda and H. Cryst. Growth 127,659 (1993).

Epitaxial phase

transitions in the iron/silicon system H.

Knel, N. Onda,

E. Mller

Gubler, S. Goncalves

Conto and

C. Schwarz

Surf. Sei. 70,559
Observation and characterization

ofthepseudomorphic

stablephase transformation of

FeUxSi on Si(lll)

N. Onda, H. Knel Mater. Res. Soc.

S. Goncalves

Conto, C. Schwarz, E. Mller

Gubler and H.

280,581 (1993).

Epitaxy ofcubic

iron silicides
Onda, H. Sirringhaus, S. Goncalves