60 nm Self-Aligned-Gate InGaAs HEMTs with Record High-Frequency Characteristics
Tae-Woo Kim, Dae-Hyun Kim and Jess A. del Alamo
Massachusetts Institute of Technology (MIT), Cambridge, MA 02139, U.S.A, E-mail: twkim78@mit.edu

Abstract

We have developed a new self-aligned gate technology for InGaAs High Electron Mobility Transistors with non-alloyed Mo-based ohmic contacts and a very low parasitic capacitance gate design. The new process delivers a contact resistance of 7 Ohm-m and a source resistance of 147 Ohm-m. The nonalloyed Mo-based ohmic contacts show excellent thermal stability up to 600 C. Using this technology, we have demonstrated a 60 nm gate length self-aligned InGaAs HEMT with gm = 2.1 mS/m at VDS = 0.5 V, and fT = 580 GHz and fmax = 675 GHz at VDS = 0.6 V. These are all record or near record values for this gate length.
heterostructure. Device fabrication starts with blank 20 nm Mo e-beam evaporation after removal of the native oxide in an HCl based solution. This Mo layer serves as source and drain nonalloyed ohmic contact. The process follows with mesa isolation, Ti/Mo ohmic pad, SiO2 sacrificial layer deposition and Ti/Au contact pad formation.

Introduction

Reducing source and drain parasitic resistance is essential to boosting the frequency response of III-V High Electron Mobility Transistors (HEMTs) [1-2]. A key to accomplishing this is to shrink the source-gate contact separation, LGS. Stateof-the-art III-V HEMTs typically feature LGS values in the range of 0.5 to 1 m which result in source resistance (Rs) in InGaAs HEMTs of around 200 ohm-m. The lowest source resistance in InGaAs HEMTs has been reported by Matsuzaki [3] as Rs = 100 Ohm-m in non-self-aligned devices with a gate-source separation, LGS = 100 nm. To improve beyond this, a self-aligned gate design is essential. Several self-alignment schemes for InGaAs HEMTs have been demonstrated in the literature [4-5]. In one approach, after T-shape gate formation, ohmic metal is deposited using the gate as a mask. This results in LGS of about half the gate head size [4]. In a separate approach demonstrated by our group, W was used as non-alloyed ohmic contacts with the gate nested inside an opening in a self aligned way. Through this technology 90 nm gate length InGaAs HEMTs were demonstrated with LGS = 60 nm [5]. This technology featured a simple lift-off gate with high parasitic capacitance. As a result, the frequency response of the fabricated transistors was unremarkable. In this work, we demonstrate a new self-aligned gate technology with non-alloyed Mo-based ohmic contacts and a very low parasitic capacitance gate design. The new process delivers very low values of contact resistance and source resistance and record high-frequency characteristics. The proposed device architecture allows for the incorporation of a high-K gate dielectric in the gate stack to achieve MOS type devices.
Fig. 1 Process flow for SAG structure: a) double exposure and double development e-beam process, b) CF4/H2/Ar based plasma etching to create opening in SiO2, c) CF4/O2 plasma to isotropically etch Mo, and d) two-step gate recess process using Citric acid and Ar plasma to expose barrier.

Process Technology

Fig. 1 shows a simplified process sequence on a HEMT
The first step in T-shape gate formation is a double-exposure double-development gate resist process (Fig. 1a). This is followed by etching of an opening in the SiO2 by anisotropic CF4/H2/Ar based plasma (Fig. 1b). We then carry out isotropic etching of the Mo layer by CF4/O2 plasma (Fig. 1c) to place the edge of the Mo contacts at a controlled distance away from the edges of the gate (set by the edge of the SiO2 sacrificial layer). Following this, we perform a two-step gate recess process which consists of cap removal by a citric acid based solution followed by Ar based plasma for the InP etch stop (Fig. 1d). This results in a slight undercut of the Mo contact layer. We then evaporate and lift off a Pt/Ti/Pt/Au gate stack followed by a thermal step to drive the Pt into the InAlAs barrier and achieve an effective barrier thickness of tins = 5 nm. Devices with Lg in the range of 50 to 150 nm were fabricated. Fig. 2 shows a schematic cross section of the final device. Fig. 3 shows STEM images of a fabricated Lg = 60 nm device. The gate to source contact separation (LGS) and siderecess-length (Lside) were 100 nm and 200 nm, respectively.

978-1-4244-7419-6/10/$26.IEEE

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Fig. 2 Final cross section of Mo-based SAG HEMT.
better results than a Mo lift-off process due to the absence of residual photoresist at the metal-semiconductor interface. Our Mo contact technology is also thermally stable up to 600C. Fig. 5 shows output characteristics of a typical Mo-based SAG HEMT with Lg = 50 nm. The device exhibits excellent saturating characteristics with low RON and a high current of 0.68 mA/m at VDS = 0.5 and VGS-VT = 0.33 V (2/3 of VDS). Fig. 6 shows typical current and transconductance characteristics vs. VGS at VDS = 0.5 V. This device exhibits over 2.2 mS/m of maximum transconductance, a record value for Lg = 50 nm HEMTs at VDS = 0.5 V. This result arises from the reduced source resistance of the SAG structure. Fig. 7 shows subthreshold characteristics for VDS = 50 mV and 0.5 V. The subthreshold swing S = 120 mV/dec and DIBL = 160 mV/V that we obtain are not as good as earlier demonstrations from our group. This is the consequence of slightly higher gate leakage current. An optimized heterostructure and Pt sinking process should correct this.
Rc=30 Ohm-m with Mo lift-off process

R [Ohm-m]

Rc= 7 Ohm-m with 1500 blanket Mo deposition
Rc= 60 Ohm-m with W-based Ohmic
Fig. 3 Cross-section STEM images of Mo-based SAG HEMT with Lg = 60 nm with 100 nm gate-source contact separation and Lside=200 nm. The barrier thickness, tins, is estimated to be 5 nm.
Lgap [m] Fig. 4 TLM measurements for three different contact schemes. The gap length in each contact was measured by SEM.

VGS = 0.5 V

For our first device demonstration, we used a metamorphic InAlAs/InGaAs heterostructure grown on a GaAs substrate with dual Si-doping layers which are located in the upper InAlAs barrier to enhance electron tunneling at the contacts. The channel is made out of In0.7Ga0.3As and is 10 nm thick.

ID [mA/m]

DC and Microwave Characteristics
Fig. 4 shows resistance measurements in TLM structures. We compare our approach using Mo blanket deposition and dry etching with a scheme based on standard Mo evaporation plus lift-off. Also, as reference, we add earlier self-aligned Wbased ohmic results [5]. The new Mo-based approach yields an Rc of 7 Ohm-m. This is nearly an order of magnitude improvement over previous self-aligned ohmic-contact technology [5] and a record value among non-alloyed ohmic contacts to InGaAs FETs. Also, blanket Mo deposition yields

0.1 V 0V

0.0 0.0
Fig. 5 Output characteristics of Mo-based SAG HEMT with Lg = 50 nm.

VDS [V]

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1.0 0.8 ID [mA/m] 0.6 0.4 0.2 0.0 -0.6 Lg = 50 nm VDS = 0.5 V

2.5 2.0 1.5

0.30 0.28 0.26 RS [Ohm.mm] 0.24 0.22 0.20 0.18 0.16 0.14 0

gm [mS/m]

W based SAG HEMT : Waldron TED 2010 [5] Mo based SAG HEMT

Rs = 0.235 Ohm.mm

1.0 0.5 0.0

Rs = 0.147 Ohm.mm

0.0 VGS [V]

120 LG [nm]

Fig. 6 Transfer and transconductance characteristics of 50 nm SAG HEMT.
In order to understand the source resistance characteristics of SAG HEMT fabricated by this process, we have directly measured the effective source resistance, Rs*, by means of the gate current injection technique [6], as shown in Fig. 8. The source resistance Rs can be extracted by linear extrapolation of RS* to zero Lg [7]. The extracted Rs is 147 Ohm-m. This value is around 30% lower than our previous report on selfaligned W-based devices [5]. Fig. 9 shows the maximum transconductance (gm) as a function of Lg for our devices and state-of-the-art non-selfaligned InAs PHEMTs [8] as well as earlier W-based SAG HEMTs [5] at VDS = 0.5 V. All these devices have about the same tins = 5 nm. Our fabricated Mo-based SAG devices show improved transconductance and excellent scalability down to Lg = 50 nm. In particularly, the Lg = 100 nm device exhibits a gm of nearly 2 mS/m at VDS = 0.5 V.

VDS = 0.5 V

Fig. 8 Effective source resistance Rs* as a function of Lg obtained from the gate current injection technique. The present devices are compared with those from an earlier self-aligned technique [5]. The actual source resistance is the extrapolation of Rs* to Lg = 0.
Microwave performance was characterized from 0.5 to 40 GHz. On-wafer open and short patterns were used to subtract pad capacitances and inductances from the measured device Sparameters. Fig. 10 plots H21, Unilateral gain (Ug), MSG and K-factor for a Lg = 60 nm device at the peak gm bias condition at VDS = 0.6 V (Lg = 60 nm is the smallest microwave device available).

This work

LG = 50 nm

VDS = 0.05 V

ID & IG [A/m]

InAs PHEMT [MIT IEDM 08]

tins = 5 nm VDS = 0.5 V
W-based SAG HEMT [MIT IEDM 07]

100 LG [nm]

VGS [V] Fig. 7 Subthreshold and IG characteristics of 50 nm Mo-based SAG HEMT.
Fig. 9 Maximum transconductance (gm) as a function of gate length for Mo-based SAG HEMTs and state-of-the-art non-self-aligned InAs PHEMTs [8] as well as W-based SAG HEMTs [5]. All devices have tins=5 nm.

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Measured data Modeled data

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H21, MAG/MSG and Ug [dB]

VGS = 0.2 V, VDS =0.6 V

favg = (fT x fmax)

MAG/MSG K

10 100

0 1,000

NICT-Fujitsu NTT Fraunhofer NGC MIT GIST

Frequency [GHz]

Fig. 10 Measured and modeled microwave characteristics of Lg=60 nm Mo-based SAG HEMT at VDS = 0.6 V.

80 100

Lg [nm]
Fig. 12 favg = (fT x fmax) as a function of Lg for reported InGaAs and InAs HEMTs in the literature, including Mo-based SAG HEMTs from this work.

Excellent values of fT = 580 GHz and fmax = 675 GHz have been obtained. The measured characteristics are well described by a simple lumped model constructed in ADS that predicts fT = 600 GHz and fmax = 675 GHz. In addition, we measured this device at the same bias point in a separate system up to 67 GHz. We found fT = 590 GHz and fmax = 680 GHz giving credibility to our measurements Fig. 11 shows fT as a function of Lg for sub-100 nm InGaAs and InAs HEMTs. The obtained fT value in our devices is the highest ever reported in a HEMT above Lg = 50 nm and bodes well for the future scalability of this device design. Fig. 12 shows favg = (fT x fmax)0.5 as a function of Lg for our SAG HEMTs as well as reports from the literature. It is clear that our new SAG technology attains record well-balanced high frequency characteristics.

400 This work

Conclusions
We have demonstrated a new Mo-based SAG HEMT technology that delivers outstanding source resistance and high frequency characteristics. In particular, Lg = 60 nm devices exhibit gm = 2.1 mS/m at VDS = 0.5 V, fT = 580 GHz and fmax = 675 GHz at VDS = 0.6 V. Mo-based SAG HEMTs shows extremely low contact resistance of 7 ohm-m and a source resistance of 147 ohm-m. This is the first demonstration of a self-aligned gate InGaAs HEMT technology with state-of-the-art frequency response. This result strongly suggests a path towards obtaining Field-Effect Transistors with fT and fmax both surpassing 1 THz. [1] [2] [3] [4] [5] [6] [7] [8] References D.-H. Kim et al., IEDM, p. 719, 2008. K. Shinohara et al., IEEE EDL, p. 241, 2004. H. Matsuzaki et al., IEDM, p. 775 , 2005. D. Morgan et al., IEEE TED, p. 2920, 2006. W. Niamh et al., IEEE TED, p. 297, 2010. D. R. Greenberg et al., IEEE TED, p. 1304, 1996. T.- W. Kim et al., IEDM, p. 483 , 2009. D.-H. Kim et al., IEEE EDL, p. 837, 2009.

fT [GHz]

NICT-Fujitsu NTT Fraunhofer NGC MIT SNU others
Fig. 11 fT as a function of Lg for reported InGaAs and InAs HEMTs in the literature, including Mo-based SAG HEMTs in this work.
Acknowledgements This work was sponsored by Intel Corporation and FCRPMSD at MIT. Device fabrication took place at the facilities of the Microsystems Technology Laboratories (MTL), the Scanning Electron Beam Lithography (SEBL) and the NanoStructures Laboratory (NSL) at MIT. TEM analysis was carried out at UNIST in Korea. Authors appreciate discussions with Prof. Dimitir Antoniadis at MIT.

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Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft 554 Ft 554 Ft Ft Ft Ft 624 Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft 30 Ft 12 Ft Ft Ft
Patch Panel 12-es cat5 HLZATI ESZKZK Asus BTD-202 Bluetooth USB Asus WL107G PCIMCIA Asus WL138G PCI krtya Asus WL167G Wireless USB Adapter Asus WL168G Antenna Asus WL169G Wireless USB Adapter Asus WL320GE WIFI Broadb.Router Asus WL520G WIFI Broadb.Router Asus WL600G WIFI Broadb.Router Canyon 8 portos switch D-Link ADSL router DI-604 D-Link Wireless router DI-524 D-Link Wireless router DI-624 SX MUHB03 USB 2.0 kls HUB 4 port Dana NW5054AIP wireless router 4p Edimax BR6104K Router+4port switch Edimax BR6104KP Router+4lan+USB nyom Edimax BR6204WG wireless router Edimax EAI05D antenna 5DBI HI-GAIN Edimax ES3105PM 5 portos switch Edimax ES3108P 8 portos switch Edimax ES3116P 16 portos switch Edimax ES3116RL 16portos switch Edimax EW7108PCG rdis Cardbus Edimax EW7128G Wireless Lan Card Edimax EW7206APG rdis Acces Point Edimax EW7209APG rdis Acces Point Edimax EW7318UG mini USB adapter Edimax EW7318USG mini USB adapter HI Edimax EW7618UG MIMO rdis hlk. Edimax IC1500WG IP kamera Edimax MIMO rdis hlkrtya PCI Edimax PS1206P printserver Edimax PS1206U printserver Edimax router+4LAN+USB printserver Canyon USB 2.0 HUB 4 port Canyon USB 2.0 HUB 4 port kicsi Gigabyte BR01G Wireless Router 54Mbp Gigabyte BR02G Wireless Router Gigabyte WB01GS Wireless USB adapter HLZATI KRTYK Edimax EN9130TXL hlzati krtya Edimax EP4103DL Cardbus csatol TP-Link TF-3239 hlzati krtya TP-Link TG-3269 hlzati krtya Hlzati krtya 10/100Mbps FLOPPY LEMEZ FUJI Floppy disk 3.5" TDK Floppy disk 3.5" formzott IRHAT CD FUJI rhat CD-R80 52X (10) FUJI rhat CD-R80 52X cakebox(50) FUJI rhat CD-R80 52X slim (10) FUJI rhat CD-RW80 4X (10) Imation CD CD-R90 Philips rhat CD CD-R80 52x (10) Philips rhat CD CD-R80 52x slim Philips rhat CD CD-R80 LS Philips rhat CDR80 52x henger/25 IRHAT DVD

Ft Ft Gigabyte WBKG Wireless USB adapter Ft Linksys BEFSR41 4port router Ft Linksys BEFSR81 8port router Ft Linksys WRT54G-D2 Wireless Router Ft Linksys WRT54GC Wireless Router Ft Linksys WRT54GL Wireless Router Ft Linksys WRT54GS Wireless Router Ft Linksys WRW 200 Wireless Router Ft Mercury 16 portos switch Ft MSI Broadband Router WIFI 11g Ft PLANET ENW-9503A RTL 10/100M Ft PLANET ENW9504 PCI 10/100M planet Ft PLANET FSD-803 8port switch fmh. Ft PLANET FSDW-1603 10/100Switch, 19" Ft PLANET SW-502 5port 10/480 Ft PLANET SW-802 8port 10/733 Ft PLANET WRT414 54Mbps Broadb router Ft PLANET XRT412 4p Broadband router Ft Repotec Router ADSL 4xLan Ft SMC 108Mbps Turbo Wireless BR Rou Ft SMC 7004VBR Broadb. Router Ft SMC WBR14-G2 Wir.Router+USB adapt Ft SMC WBR14-G2 Wireless Router Ft SMC WBR14T-G Wir.Router+USB adapt Ft SMC WCBG Wireless PCIMCIA Card Ft SMC WUSBT-G2 wireless USB adapter Ft Sunlink USB 2.0 kls HUB 4 port Ft Sweex USB 2.0 kls HUB 4 port Ft TP-Link TD-8810 ADSL2+modem Ft TP-Link TL-ANT2405C Wireless antenna Ft TP-Link TL-R860 Broadband router Ft TP-Link TL-SF1005D 5 port switch Ft TP-Link TL-SF1008D 8 port switch Ft TP-Link TL-SF1016D 16 port switch Ft TP-Link TL-WN321G USB adapter Ft TP-Link TL-WN610G PCMCIA krtya Ft TP-Link TL-WN620G USB adapter Ft TP-Link TL-WN651G PCI krtya Ft TP-Link TL-WR542G Wireless router Ft TP-Link TL-WR642G Wireless router Ft Linksys SDport switch Ft Linksys WCF54G Wireless Adapter CF Ft Linksys WUSB54GC Wireless USB adapt. Ft Ravo 54Mbps PCI Card 932 Ft SMC WPCIG Wireless PCI Card 46 Ft Verbatim Floppy disk 3.5" 42 Ft 153 Ft Philips jrarhat CD-RW80 12x Ft TDK rhat CD CD-RW80 12X (10) 146 Ft TDK rhat CD-R80 52X (10) 251 Ft TDK rhat CD-R80 52X LightScribe 265 Ft TDK rhat CD-R80 52X henger 10db 157 Ft TDK rhat CD-R80 slim 52X 143 Ft Verbatim CD CD-R80 52x heng/10db 235 Ft Verbatim CD CD-R80 52x slim Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft 54 Ft
238 Ft 261 Ft 154 Ft 230 Ft Ft 134 Ft Ft 140 Ft
FUJI DVD+R 4,7GB 16x FUJI DVD-R 4,7GB 16x (5) FUJI DVD-RW 4,7GB 2x (5) Imation DVD-RW 4,7GB 4x Philips DVD+R 8,5GB 2,4X ktrteg Philips DVD+RW 4,7GB 4x slim Philips DVD-R 4,7GB 16X Philips DVD-R 4,7GB 16X Slim Philips DVD-R 4,7GB 16x 10db/henge Philips DVD-R 4,7GB 16x Lightscribe TDK DVD+R 4,7GB 16x TDK DVD+R 4,7GB 16x LS TDK DVD+R 8,5GB Dual Layer CD TART CD ablakos paprtok 100db CD-tart 1 db-os (5db) CD-tart 1 db-os slim DVD-TART Hama DVD Box ST-39, fekete Hama DVD tart Ocean 10 db tltsz DVD-TOK DVD-tart 1db-os DVD-tart 1db-os deluxe PATRON Canon BC 02 Canon BC 06 Canon BC 20 Canon BC-21E Canon BCI 24B Canon BCI 24C Canon BCI 6 cyan Canon BCI 6 fekete Canon BCI 6 magenta Canon BCI 6 yellow Canon BCI3 fekete Canon BCI3 kk Canon BCI3 piros Canon BCI3 srga Canon BX-3 Canon CL41 Canon CL51 Canon CLI-8BK Canon CLI-8C Canon CLI-8M Canon CLI-8Y Canon NPG-1 fnym. toner Canon PG40 Canon PG50 Canon PGI-5BK Minolta 106B Toner Minolta 2400 toner fekete Minolta 2400 toner series Minolta PP1100 toner (6000lap) OKI festkszalag 3410 black Samsung CLP-510D7K fekete Samsung CLP-510D7M cyan Samsung CLP-510D7M magenta Samsung CLP-510D7M yellow Samsung ML1520D3 (ML1520) Samsung ML1610D2 ML-1610 Samsung ML2010D3 Samsung SCX4100D3 SCX-4100

240 Ft TDK DVD+RW 4,7GB 4x 235 Ft TDK DVD-R 4,7GB 16x (10) 352 Ft TDK DVD-R 4,7GB 16x (10) slim 414 Ft TDK DVD-R 4,7GB 16x 10db/henger 837 Ft TDK DVD-RW 4,7GB 4X 294 Ft Verbatim DVD+R 16x pastel slim 223 Ft Verbatim DVD+R 4,7GB 16x 217 Ft Verbatim DVD+R 4,7GB 16x nyomtat Ft Verbatim DVD+RW 4,7GB 4x 332 Ft Verbatim DVD-R 16x pastel slim 225 Ft Verbatim DVD-R 4,7GB 16x 316 Ft Verbatim DVD-R 4,7GB 16x heng (10) Ft Verbatim DVD-R 4,7GB 16x nyomt. 500 Ft Kolink CD tart 24 darabos, fekete 57 Ft Kolink CD tart 48 darabos, fekete 49 Ft Ft Longmax CD/DVD tart CDV-350 Ft Longmax DVD tart DVD-Ft DVD-tart 1db-os tltsz deluxe 39 Ft DVD-tart 2db-os Ft Samsung SCX4521D400 Ft HP 1823D Ft HP 51625A Ft HP 51626A Ft HP 51629A Ft HP 51645A Ft HP 51649A Ft HP 6578D Ft HP 6614D Ft HP 6615DE Ft HP 6625AE Ft HP 6656A Ft HP 6657A Ft HP 6658A Ft HP 8727A Ft HP 8728A Ft HP 8765AE Ft HP 8766AE Ft HP 8767AE Ft HP 9351AE Ft HP 9352AE Ft HP 9361EE Ft HP 9362AE Ft HP 9362EE Ft HP 9363AE Ft HP 9364AE Ft HP Toner 3903A Ft HP Toner 3906A Ft HP Toner 4092A Ft HP Toner 4096A Ft HP Toner 7115A Ft HP Toner 7115X Ft HP Toner 92274A Ft HP Toner 9723A Ft HP Toner Q2612A Ft HP Toner Q2613A Ft HP Toner Q2613X Ft HP Toner Q5949A
340 Ft 235 Ft 215 Ft Ft 340 Ft 225 Ft 234 Ft 234 Ft 343 Ft 221 Ft 230 Ft Ft 234 Ft 392 Ft 566 Ft
918 Ft 756 Ft 53 Ft 50 Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft Ft
Samsung SCX4200A Samsung SCX4216D3 PATRON UTNTLTTT BC-21E 3x5ml Dataproduct 80010 BCI-21C 3x5 ml Dataproduct 80010 PATRON UTNTLT BC01/02 InkTec 2xtlts BC05 InkTec 2xtlts BC20 InkTec 2xtlts BCI-21 C InkTec BCI-24 B InkTec(BPI-424BK) BCI-24 C InkTec 51629A/C6614 Ink 2x tlts NY-TONER UTNTLTTT HP 4191A Dataproduct 450E toner HP 8061A Dataproduct 860E toner FOTPAPR HP C6951A matt Premium Plus HP C7891A fnyes, 10x15 HP Q2519A fnyes, Premium KELLKEK CD Lencse tisztt CD-lemez tisztt kit USB Lmpa Gombelem CR2032 Canyon Bluetooth Adapter BTU3 Canyon Bluetooth Adapter BTU4 Canyon USB Adapter PCI Belkin Toolkit csavarozkszlet Egr-monitor-bill tkapcs PS/2 1/4 Egr-monitor-bill. tkapcs PS/2 Egr-monitor-bill.tkapcs Aktv 2/1 Egr-monitor-bill.tkapcs Aktv 4/1 MAXX Szmtgpvd ramkr Srtett leveg 342GR 520ml Srtett leveg 400ml nmet Sata Raid krtya 2 port PCI Sunix Sunix ATA133 RAID krtya 3710 Sunix Firewire 3+1 portos 3010 USB Bluetooth Adapter USB Bluetooth Adapter 100m USB Tecom Bluetooth Access BT3021 USB Tecom Bluetooth headset BT3061 2.5" kls hz USB 2.0 SATA HDSUB2S 3,5" USB2.0 alu kls hz 3.5" kis fileserver, alu, RJ45+USB Canyon 2.5" kls HDD hz HDD25 Canyon 3.5" kls HDD hz HDD35 Canyon 3.5" kls HDD hz HDD35 SAT Canyon 5.25" kls ODD hz UATA-USB KBELEK UTP CAT5 Patch kbel 100m UTP CAT5 Patch kbel 105m UTP CAT5 Patch kbel 305m UTP CAT5 fali kbel 305m UTP kereszt kbel 3m UTP kereszt kbel 5m UTP kereszt kbel 10m UTP kereszt kbel 15m CD audio kbel fekete-fekete COM2-COM1 talakt 25/9 DVI kbel M/HD15 M 2m