AN_BLF574

BLF574 LDMOS Transistor Model
Rev. 01 12-08-2008 Application note
Document information Info Keywords Abstract Content BLF574, BLF574, LDMOS, model This document describes the BLF574 LDMOS transistor model including its installation, usage and verification.

NXP Semiconductors

BLF574LDMOS transistor model
Revision history Rev 01 D 20070613 Description Initial revision

Contact information

For additional information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP B.V. 2008. All rights reserved.

Application note

Rev. 01 12-08-2008

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Table of contents
1. 2. 3. 4. 5. 6. 6.1 6.2 6.3 7. 7.1 7.2 7.3 7.4 Introduction...4 Model Description..4 Model Parameters..5 Parameter extraction procedure.6 Model limitations..6 Installation Instructions..7 Case 1: No SiMKit installed..7 Case 2: Old version of the SiMKit installed.7 Case 3: Updated version of the SiMKit installed.7 Legal Information..9 Definitions..9 Disclaimers..9 Patents...9 Trademarks...9

1. Introduction

The purpose of this document is to provide the customer with a comprehensive description of the BLF574 LDMOS transistor model, extraction procedure, installation procedure, limitations and application. The BLF574 is a 400W RF (Two tone average) power transistor (see Fig 1). The device has been optimized for applications in the 225 MHz frequency band. For more information about the device performance, see the Data Sheet.
Fig 1. Drawing of BLF574 device.

2. Model Description

Table 1 summarizes the model information.
Table 1. Summary of model information
Device name Model name Model version Simulator Library version
BLF574, BLF574 NXP_ BLF574

0.1 ADS 2005A, ADS2006A

SiMKit 2.4
The electrical behavior of the transistor die is described by a scalable, physics based Sub-Circuit model1. This model is based on the Philips standard models MM11 for the channel region and MM31 for the drain extended region. MM11 is a surface potential based MOST model providing a smooth transfer from sub- to super threshold including the sign swap of the temperature coefficient of the drain current. This improves inter1. See: M.P.J.G. Versleijen, V.J. Bloem, J.A. van Steenwijk, O.I. Yanson, A new physics based dynamic electro thermal large signal model for RF LDMOS FETs, IEEE MTT-S 2004 International Microwave Symposium Digest, Volume 1, pgg. 39 42.

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modulation distortion modeling. In addition, parasitic resistances and capacitances have been included to model the interconnect lines on the die. The model scales with the number of cells and the length of the gate fingers. Temperature scaling of the model is a static one and is based on the standard temperature scaling rules of the building blocks (MM11, MM31). At present, lumped element components are used to model the matching capacitors, package parasitic capacitance and bond-wire inductances.

3. Model Parameters

The ADS symbol for the BLF574 device is shown in Fig 2.

D1 D2 G1 S G2

D1 Cpkd

Cpkg Ld G2 Lg1 Cpkd D2

Cpkg Ls S
Fig 2. ADS symbol of the BLF574 device model. Fig 3. Schematic of the package model as in Fig 2.
The parameters Lg1_Spread, Lg2_Spread, etc. allow controlling the spread of the values of the bond-wire inductances and matching capacitances. In practice, the parameters set the ratio between the actual and nominal values of each element2. By default, these parameters are set to 1.
For instance, by setting Lg1_spread to 0.95, the actual value of the Lg1 inductance becomes 95% its nominal value.

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The expected statistical distributions of the spreading of the bond-wire inductances and matching capacitances are available and can be provided by NXP on special request. The T_Device parameter controls the device temperature used in the simulation.
4. Parameter extraction procedure
The model parameters of each section were extracted with the following procedure: i. Extraction of the parameters of the active die model a. The DC characteristics were measured in wide bias and temperature ranges (Vgs up to 15V, Vds up to 30V, T up to 125 C). b. The s-parameter were measured in a wide frequency band c. Dedicated structures were used for the de-embedding of the parasitics due to metal structures and interconnects from the s-parameter data.
d. A semi-automated procedure implemented with the Agilents IC-CAP program was used to extract the model parameters ii. Extraction of the parameters of the package model a. The values of the matching capacitances are obtained from design information b. The value of the package parasitic capacitance is measured with a lowfrequency CV meter c. The starting values of the bond-wire inductances are obtained from design information.
d. The device S-parameters are measured using both an unmatched test fixture3 and the application circuit. e. The inductance values are then optimized by fitting the S-parameters data. The package parasitic source inductance is also optimized.

5. Model limitations

The current version of the model includes only static thermal effects. This means that only the simulation temperature can be specified. As a consequence, it is expected that the model will provide a slight overestimation of the P1dB and P3dB values. The amount of this overestimation depends on the specific simulation conditions. However, it is expected not to exceed 1 dB. Another consequence of the absence of electro-thermal effects is that the applied bias voltage (Vgs) needed to obtain the required Idq is expected to be 0.1V-0.2V higher in simulations than in measurements. The absence of dynamic thermal effects also implies that the model is at present not capable to take in to account thermal memory effects.
3. This test fixture is composed by a simple 50 transmission line and, therefore, provides 50 loadings at the input and output of the device.

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In addition, since the model is based on a quasi-static formulation, it does not predict memory effects due to non-quasi-static (NQS) phenomena. Some of these limitations will be overcome in the near future when a new, fully electrothermal, version of the model (at present under testing) will be made available.
6. Installation Instructions
In order to run properly, the Design Kit requires the latest version of the Philips model library SiMKit to be installed (see Table 1 for version information). The SiMKit model library provides the definitions of the primitive submodels employed by the main device model. The installation procedure is described for three possible cases.
6.1 Case 1: No SiMKit installed
i. ii. iii. iv. v. vi. vii. viii. Close all ADS schematics In the main window of ADS, select "Design Kit -----> Install Design Kits." Install the Philips SiMKit Exit and restart ADS In the main window of ADS, select "Design Kit -----> Install Design Kits." Install the model Design Kit Exit and restart ADS Now the model will function properly
6.2 Case 2: Old version of the SiMKit installed
i. ii. iii. iv. v. vi. vii. viii. ix. x. xi. xii. Close all schematics In the main window of ADS, select "Design Kit -----> Setup Design Kits." REMOVE the older version of the SiMKit (DO NOT just DISABLE the old SiMKit) Apply the changes Exit and restart ADS In the main window of ADS, select "Design Kit -----> Install Design Kits." Install the Philips SiMKit Exit and restart ADS In the main window of ADS, select "Design Kit -----> Install Design Kits." Install the model Design Kit Exit and restart ADS Now the model will function properly
6.3 Case 3: Updated version of the SiMKit installed

i. ii. iii. iv. v.

Close all schematics In the main window of ADS, select "Design Kit -----> Install Design Kits." Install the Design Kit of the model Exit and restart ADS Now the model will function properly

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NOTE: failing to have the proper version of the Philips SiMKit installed will result in an error message during the simulations.

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damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is for the customers own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

7. Legal Information

7.1 Definitions
Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

7.3 Patents

Notice is herewith given that the subject device uses one or more patents and that each of these patents may have corresponding patents in several jurisdictions.

7.2 Disclaimers

General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental

7.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are property of their respective owners. ADS is a trademark of Agilent Technologies Momentum is a trademark of Agilent Technologies IC-CAP is a trademark of Agilent Technologies

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NXP B.V. 2008
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Date of release:12-08-2008 Document order number: Published in The Netherlands

RF Power Presentation Broadcast (ISM), Microwave and Cellular
Richard Marlow: European Regional Marketing

February 2009

Microwave, Broadcast & ISM Markets
Broadcast (TV and radio transmission)
NXP has a long history (as Philips) and excellent reputation in the market Rugged performance is a critical factor where NXP scores over competition New high power products for UHF (BLF87x/88x) and VHF (BLF57x) Demo boards suited to TV and FM broadcast applications These devices also fit into ISM applications e.g. VHF communications, laser driving, RF jamming and radar NXP devices specified for radar applications (Avionics, L band, S band) LDMOS has significant benefits (gain, stability etc) over Bipolar competitors US suppliers suffer significantly with ITAR restrictions New high voltage devices for higher power density in 2009 Pallet solutions to simplify customer developments
Microwave (civil and military radar applications)

CONFIDENTIAL

BU MMS Regional Marketing, Richard Marlow. February 2009
NXP RF Power Development and Assembly
Nijmegen, The Netherlands - Headquarters, Quality & Application Lab - Research & Development center - Wafer fabs ( 4 and 8 )
Manila, Philippines - High-volume Assembly center - Test center
NXP RF Power Manufacturing Capabilities
High volume supply capability with flexible ramp-up and capacity extension RF Power wafer fabs in the Netherlands

0.6 m wafer fab

4 inch Gold-metallization LDMOS Gen2, Gen3, Gen4

0.14 m CMOS fab

8 inch, LDMOS 0.4 m (Gen 6) 8 inch, LDMOS 0.3 m (Gen 7) Aluminum
Fully automated world class off-shore assembly centers
Application areas for Different LDMOS Generations

Concept

F, ET Gen7 Doherty Class AB High Voltage Gen6 f 1GHz 2GHz 3.8GHz
Dedicated NXP RF Power Website

www.rfpower.nl/cdrom

Your portal to: The latest product info Datasheets Application Notes ADS Models Mounting instructions Support offices: Cumberland, USA Nijmegen, NL Shanghai, China Seoul, Korea Tokyo, Japan

CONFIDENTIAL 6

Broadcast & ISM

Products Overview

NXP Broadcast & ISM Devices
For UHF transmitters (analog and digital TV)
BLF878 and BLF871 from 40V version of Gen6 LDMOS BLF888 and BLF881 from 50V version of Gen6 process Building upon NXPs BLF861A position as UHF market standard (BLF878 = double BLF861A) Continues NXP excellence in ruggedness for broadcast applications
For VHF transmitters (FM and digital TV/radio)
BLF57x from 50V version of Gen6 LDMOS process Power output from 20W (BLF571) to 1200W (BLF578) Demo boards for FM and broadband applications

ISM applications

BLF57x also suitable for many ISM applications e.g. VHF radio communications (civil and military), driving industrial lasers, medical and scientific high power

UHF TV Broadcast Devices

BLF871:
Po 100W for analog TV (efficiency 45%) Po 24W average for digital TV (DVB-T efficiency 30%) Used as low power UHF transmitter or high power driver

BLF878:

Po 300W for analog TV (efficiency 42%) Po 75W average (DVB-T efficiency 30%) Broadband matching: MHz

BLF888:

Optimized for digital TV applications Po 110W average (DVB-T @860MHz) Same package as BLF878
All devices extremely rugged can withstand VSWR 1:10 with abrupt mismatch in transmitter

CONFIDENTIAL 9

UHF (DVB-T) PA based on BLF87x or BLF88x

1 x BLF871

1 x BLF881

8 x BLF878 (75Wavg)

8 x BLF888 (110Wavg)
Po = 500W DVB-T (57dBm) Ga = 18dB with coupler loss 0.8dB
Po = 700W DVB-T (58.5dBm) Ga = 18dB with coupler loss 0.8dB
UHF Availability Schedule

Product UHF

BLF871 BLF878 BLF881 BLF888
100 W 300W Analog ( 75W DVB-T) 35W DVB-T 110W DVB-T SOT467 SOT979A SOT979A SOT979A Available Available 1Q 09 Available

Package

Preliminary samples

A-gate

Design Frozen

V-gate

Qualification samples
Available Available QQ1 09
Available Available QQ2 09
All devices designed for rugged operation (essential for broadcast reliability) High efficiency allows for smaller designs and more energy efficiency DVB-T optimized devices (BLF88x) specifically for growing digital TV market NXP continues market leading position for UHF (analog & DVB-T) broadcasting
VHF (FM & TV) Broadcast Devices
Product Pout Package Gp (dB) Dr Eff(%) RthJ-C (K/W)

3.2 0.18 0.25 0.13

RthJ-HS (K/W)

4 0.57 0.46 0.31

BLF571 BLF573S BLF574 BLF578
20W (CW) 300W (CW) 500W (CW) 1200W

(pulsed)

SE SOT467 SE SOT502B3 PP SOT539A2 PP SOT539A2

> 13:1 > 13:1 > 13:1 @400W > 13:1 @1000W
Typical Performance @ rated Power and frequency of 225 MHz, PP=push-pull, SE = Single ended

SE SOT467 Ceramic

SE SOT502B3 Ceramic

PP SOT539A2 Ceramic

CONFIDENTIAL 12
BLF574 Demo Performance @225MHz

BLF574

One tone CW gain and efficiency versus load power
Vds =50V, Idq per section = 500mA, Freq =225 Mz Gp(dB) Gain Drain_eff 70

@ 400W Deff = typ 70%

30 Dr Eff (%)

@ 400W Gp = typ 26dB

250 PL(W) 10

P1dB = 440W 0

450 500

BLF574 Tuned for FM Band

600W of CW power can be generated in board space smaller than 2 x 4. Efficiencies greater than 73% are achieved, gain is 27dB at 600W. Compression, efficiency, and gain performance consistent over the FM band.
CW Gain in the FM radio Band
Gain vs Output Power as a Function of Frequency

Gain (dB)

BLF574 Vdd = 50V Idq = 200mA 62125V2

88 MHz 98 MHz 108 MHz

Output Power (W)
CW Efficiency in the FM radio Band
Efficiency vs Output Power as a Function of Frequency

Efficiency (%)

600 650

Pout (W)

VHF (inc. FM) Availability Schedule

Product Pout Package

Engineering samples
20W (CW) 300W (CW) 500W (CW) 1200W (pulsed)
Available Available Available Available
Available Available Available Q1 09
Available Available Available Q2 09
Performance @ rated Power and frequency of 225 MHz, PP=push-pull, SE = Single ended
All devices designed for rugged operation (essential for broadcast reliability) High efficiency allows for smaller designs and more energy efficiency Optimized for FM/DAB radio and VHF television transmitters Well suited to civil/military communication applications

Microwave

RF Power Devices for Microwave

Civil Aircraft LDMOS

BLA0912-250 BLA1011-2 BLA1011-10 BLA1011(S)-200 BLA1011-300

S-Band Radar LDMOS

BLS2933-100 BLS6G2731-6 BLS6G2731(S)-120 BLS6G3135(S)-20 BLS6G3135(S)-120

L-Band Radar LDMOS

BLL1214-35 BLL1214-250
LDMOS Advantages vs Bipolar
No BeO any more means lower Zth, lower die-temperature.
MX0912B251(Bipolar): Zth = 0.28 (10 s 10%). BLA0912-250 (LDMOS): Zth = 0.13 (10 s 10%).
Improved MTTF With LDMOS:
Gen6 LDMOS approx. 10 to 15 times better than Bipolar
LDMOS has better flexibility w.r.t pulse formats:
Bipolar tends to oscillate at low pulse durations (ruggedness !) Bipolar shows variation in performance over various pulse widths
No thermal runaway for LDMOS:
Bipolar shows local heating (a sort of thermal oscillation) LDMOS does not have this disadvantage
Standard LDMOS-packages can be used (no toxic Beryllium)
Cost of BeO-packages continues to increase In the future BeO-packages are expected to be phased out

CONFIDENTIAL 20

LDMOS Now Replaces Bipolar in the Market
100.00% 90.00% 80.00% 70.00% 60.00% 50.00% 40.00% 30.00% 20.00% 10.00% 0.00%

LDMOS Bipolar

78.78%

86.44%

90.07%

89.32% 98.29%

21.22%

13.56%

10.68% 1.71%
NXP Civil Aircraft Devices
BLA1011-200, BLA1011-10, BLA1011-2 series
Designed for Civil Aircraft applications Qualified in latest TCAS equipment Successfully introduced market-first LDMOS transistors for the Civil Aircraft market. Complete line-up available:
BLA1011-2 BLA1011-10 BLA1011-200

Key features:

High gain: typical dB at 200W High efficiency: typical 50% at 200W High VSWR capability: VSWR 5 at 200W
Key Product Highlights: Civil Aircraft
BLA0912-250 Performance summary
High power 250 W High gain 13 dB Efficiency > 45 % Excellent ruggedness Easy power control Various applications (TCAS, JTIDS, Mode-S)

BLA1011-300

Higher output power: > 300 W High gain: typical dB High efficiency: typical 55% Extremely rugged: Capable of withstanding VSWR Intended for TCAS applications
Building on the successful BLA1011 range the BLA0912-250 LDMOS transistor is an asset to the Civil Aircraft portfolio covering the entire Civil Aircraft band from 960 to 1215 MHz.

L-Band Radar Devices

BLL1214-250 Performance summary
High power 250 W High gain 13 dB Efficiency > 42 % Excellent ruggedness 35W driver transistor for BLL1214-250 High gain 13 dB Efficiency > 43 % Excellent ruggedness
BLL1214-35 Performance summary

Released for production

designs at EU & US customers
Better behavior than Bipolar
Successfully introduced Low ZTH lower junction temp, no thermal runaway market-first LDMOS transistor Greater flexibility for different pulse formats line-up for the L-Band Radar (e.g. short 200nsec, as well as longer pulses of 1msec) market.
Less susceptible to oscillations.
S-Band Radar Devices (2.7-3.5GHz)
BLS6G2731-120 performance summary
2.7 3.1GHz frequency band High power 120W and high gain (13.5 dB) Efficiency > 48 % Excellent ruggedness 6W driver device BLS6G2731-6G 3.1GHz 3.5GHz frequency band High power 120W and high gain (11dB) Efficiency > 43 % Excellent ruggedness 20W driver device BLS6G3135-20
BLS6G3135-120 performance summary
Successfully introduced market-first LDMOS transistor line-up for the S-Band Radar market.
Better thermal behavior than Bipolar
Low ZTH lower junction temperature, no thermal runaway.
High Voltage Devices and Pallets
Higher voltage (50V) LDMOS operation gives higher output power
BLA1011-300 300W typical @ 32V (50s pulse 2% duty cycle) BLA6H1011-600 600W typical @ 50V (50s pulse 2% duty cycle) BLL1214-250 250W typical @ 36V (1ms pulse 10% duty cycle) BLA6H1214-500 500W typical @ 50V (1ms pulse 10% duty cycle) BLA0912-250 250W typical @ 36V (100s pulse 10% duty cycle) BLA6H0912-500 500W target @ 50V (100s pulse 10% duty cycle)
BLL6H0514 common 50V driver device for Gen6 high power devices RF Pallet technology for easier end customer application
High output power in small form factor input/output matched to 50 to simplify interfacing 200W pallet using 2x BLS6G2933-120
Long term roadmap developments for higher power and frequency
Gen7 LDMOS for higher power output GaN technology for higher frequency

CONFIDENTIAL 26

BLA6H1011-600: Objective Specification

BLA6H1214-500: Objective Specification
NXP Developing RF Pallet Technology
200W S-band pallet 2900MHz-3300MHz in small form factor Composed out of two BLS6G2933-120 discrete LDMOS transistors Target spec: Pout > 215W, Gain > 11 dB, Efficiency > 40% Matched to 50 I/O to simplify customer application design

BLS6G2933-190P Rev 1

OUTPUT
Target Specification of 200W S-band Pallet
Item Frequency bandwidth Pulse width Duty Cycle Peak 1dB comp power Drain current Power supply voltage Gain flatness Pulse droop PAE Gain Return loss Input VSRW
Symbol f Pw Dc P1dB Id max Vs GF Adroop N G RL VSWR

Condition

Min 2.9 0.-0.1.92:1

Max 3.0.5

Unit GHz us % Watt A V dB dB % dB dB

Cellular & WiMAX

NXP 1GHz Base Station Portfolio (Gen6)
Product Package Matching Mode of Operation Frequency Band (Min Max) Vds Adjacent Channel Output Pow er Efficiency Leakage Pow er Gain Ratio -ACLR (W) 26.(dB) 23 22.5 20.(%) 8 7.27 (dBc) -48.5 -49 -40 -42 -41 -40
(I/O) 800-1000MHz BLF6G10S-45 BLF6G10-45 BLF6G10LS-135R BLF6G10LS-160 BLF6G10LS-200 BLF6G10LS-200R SOT608B SOT608A SOT502B SOT502B SOT502B SOT502B I/ O I/ O I I I I 2C-WCDMA 2C-WCDMA 2C-WCDMA 2C-WCDMA 2C-WCDMA 2C-WCDMA
(MHz) 800-1000 800-1000 800-1000 800-1000 800-1000 800-1000

(V) 28 28

Note: Test signal: 3GPP; test m odel 1; 64 DPCH; PAR = 7.5 dB at 0.01% probability on CCDF per carrier; carrier spacing 5MHz.

SOT608A

SOT608B

SOT502B

NXP 2GHz Base Station Portfolio (Gen6)
Product Package Matching Mode of Operation Frequency Band (Min Max) Vds Adjacent Channel Output Pow er Efficiency Leakage Pow er Gain Ratio -ACLR (W) 2.5 2.5 29.5 29.25 35.5 35.(dB) 19.5 19.19 16.5 16.(%) 37.5 37.27 27.5 (dBc) -49 -50 -40 -40 -40 -46 -35
(I/O) 1800 - 2000 MHz BLF6G20S-45 BLF6G20-45 BLF6G20-75 BLF6G20LS-75 BLF6G20-110 BLF6G20LS-110 BLF6G20LS-140 BLF6G20LS-180 BLF6G20-180PN SOT608B SOT608A SOT502A SOT502B SOT502A SOT502B SOT502B SOT502B SOT539A I/ O I/ O I/ O I/ O I/ O I/ O I/ O I/ O I/ O 2C-WCDMA 2C-WCDMA GSM/EDGE GSM/EDGE 2C-WCDMA 2C-WCDMA 2C-WCDMA IS95 2C-WCDMA
(MHz) 1800-2000 1800-2000 1800-2000 1800-2000 1800-2000 1800-2000 1800-2000 1800-2000 1800-2000

(V) 32

SOT502A

SOT539A

NXP 2.2GHz Base Station Portfolio (Gen6)
Product Package Matching Mode of Operation Frequency Band (Min Max) Vds Adjacent Channel Output Pow er Efficiency Leakage Pow er Gain Ratio -ACLR (W) 2 2.5 2.50 (dB) 29.5 18.5 18.17.5 (%) 8.28.27.5 (dBc) -51 -49 -49 -43 -43 -40 -40 -35
(I/O) 1800 - 2000 MHz BLM6G22-30(G) BLF6G22S-45 BLF6G22-45 BLF6G22-75 BLF6G22LS-75 BLF6G22LS-100 BLF6G22LS-130 BLF6G22LS-180 BLF6G22-180PN SOT822-1 SOT608B SOT608A SOT502A SOT502B SOT502B SOT502B SOT502B SOT539A I/ O I/ O I/ O I/ O I/ O I/ O I/ O I/ O I/ O 2C-WCDMA 2C-WCDMA 2C-WCDMA 2C-WCDMA 2C-WCDMA 2C-WCDMA 2C-WCDMA IS95 2C-WCDMA

(MHz) 2000-2200 2000-2200 2000-2200 2000-2200 2000-2200 2000-2200 2000-2200 2000-2200 2000-2200

SOT822-1

Power Amplifier Efficiency Evolution

LPA Efficiency

NXPs Technology Efficiency Evolution
2.2GHz Doherty demo boards
Two-Way Doherty Result comparison
2C WCDMA Performance @ 9dB Back-off!

Asymmetrical

BLF6G22-100 + BLF6G22-180P

Symmetrical

BLC6G22-130+ BLC6G22-130

2.14 GHZ

2.14GHz 55dBm 46dBm 35% -33dBc 15dB
Po-peak 56dBm Po-avg1) 47dBm Eff IM32) Gain 42% -32dBc 14.5dB
Note 1: at 9dB back-off w.r.t Po-peak Note 2: based on 3GPP Testmodel I 64DPCH clipped to 67% for each carrier
Key benefits of integrated Doherty
2 Ldmoss (so 2 packages), input splitter and combiner at output are combined into one package

splitter

combiner

BLD6G2x-50

Results
Over all cost reduction in application Smaller form factor Higher reproducibility Faster time to market

CONFIDENTIAL 40

Integrated 2W-DPA Prototype
Integrated Doherty in Standard Package
Multiple Low Power Unit-cell Dohertys in a package
Unit-cell Doherty Integrated in Gen 6 LDMOS MMIC process
50W CW Gain and Efficiency
CW Gain and Eff/PAE versus Pout Vds= 28V, Idq_AB= 180mA, Vgs_C=0.8V

18 Eff PAE 60

48 Pout_avg [dBm]

Freq=2140MHz

CONFIDENTIAL 42

Eff, PAE [%]

12 Gp [dB]

50W 2C-WCDMA Performance

2C_WCDMA IM3, Gain and Eff versus Pout Vds= 28V, Idq_AB= 180mA, Vgs_C=0.8V
-10 -15 -20 -25 IM3 [dBc] -30 -35 -40 -45 Gain -50 -55 -44 Pout_avg [dBm] 0 IM3 Eff Eff [%], Gp [dB]
Freq=2140MHz, TM1 64DPCH PAR= 7.5dB
50W Memory and DPD Results
Po-avg= 39.8dBm, Vgs_C= 0.8V

0 No DPD -10 DPD -20

-30 dBm

-70 2.110

2.140 Frequency (GHz)
Residual Memory Level -40dBc
Performance description for a PA output stage Poor memory performance, memory compensation may struggle, dependent on phase flatness. Good memory performance, most customer specifications met with memory compensation, dependent on phase flatness. Excellent memory performance, negates the need for memory compensation in the DPD.

-50dBc

-60dBc
Test Waveform TM1_64DPCH_101_PAR_7.5dB Centre Freq 2140 MHz Peak Pout 47.19 dBm Average Pout 39.84 dBm PAR out 7.35 dB Supply Volts 28.00 V Total Current 0.81 A Efficiency 42.5 % PA Gain 13.6 dB PAE 40.6 %
Integrated Doherty versions

Tentative schedule

TD-SCDMA-version

BLD6G21-50

Sample available: December 2008 Validated device May 2009 (product is ready for volume ramp up) Fully released July 2009

WCDMA-version

BLD6G22-50
Sample available: December 2008 Validated device: June 2009 (product is ready for volume ramp up) Fully released Augst 2009
NXP WiMax Portfolio (Gen6 LDMOS)
Product Package Matching Mode of Operation Frequency Band (Min - Max) Output Pow er Pow er Gain Efficiency Adjacent Channel Leakage Ratio -ACLR (dBc) (I/O) WiMAX 2500 - 2700 MHz BLF6G27LS-135 BLF6G27-135 BLF6G27S-45 BLF6G27-45 BLF6G27-10 WiMAX 3400 - 3800 MHz BLF6G38LS-100 BLF6G38-100 BLF6G38LS-50 BLF6G38-50 BLF6G38S-25 BLF6G38-25 BLF6G38-10 SOT502B SOT502A SOT502B SOT502A SOT608B SOT608A SOT975A I/ O I/ O I/ O I/ O I/ O I/ O I IS-95 IS-95 IS-95 IS-95 IS-95 IS-95 IS-95 3400-3800 3400-3800 3400-3800 3400-3800 3400-3800 3400-3800 3400-3800 18.5 18.-47 -47 -47 -47 -47 -47 -47 SOT502B SOT502A SOT608B SOT608A SOT975A I/ O I/ O I/ O I/ O I IS-95 IS-95 IS-95 IS-95 IS-95 2500-2700 2500-2700 2500-2700 2500-2700 2500-16.5 16.22 -47 -47 -47 -47 -47 (MHz) (W) (dB) (%)
Note: IS-95 signal w ith pilot, paging, sync and 6 traffic channels (Walsh codes 8-13). PAR=9.7dB @ 0.01% probability on the CCDF

SOT975A

BLF6G38-50 under WiMAX conditions