The Cause of HDD noise The HDD generates different noise characteristics by the
frequency level. The biggest source of the noise is the spindle motor which generates vibration from its rotating motor. The vibration is transferred to the outside of the HDD and causes the noise. Also, the flow of air inside HDD caused by disk rotation can create noise. During seek mode, the movement of the head actuator generates a very highpitched noise, familiar to all PC owners.
Noise GuardTM and SilentseekTM Technologies Samsung has developed and applied
NoiseGuardTM technology that is a combined technology to eliminate each noise source or to minimize energy transmission. First, modification of the spindle motor's design minimizes the noise source. In addition, the cover is designed to optimize the flow of air. The Damper utilizes vibration absorbing material, installed on the area of highest density, which maximizes the transmission of energy to the outside. Furthermore, to minimize the data seeking noise that has always irritated users, we have developed and applied SilentSeekTM technology, which makes the movement of the head actuator much smoother. While other competing technologies, such as the AAM option, cause performance degradation to lower the noise level, Samsung's SilentSeekTM technology causes virtually no degradation in performance.
Maximize the Confidence in Data Storage
hen the monitor, CD-ROM or RAM malfunctions, the problem is limited to that particular part. However,
malfunction in the HDD means far more greater problems in other components. It is because most PC users consider their HDD as the final storage device for their data. Therefore, damage in the HDD generally causes enormous intellectual property loss. This makes PC manufacturers consider the HDD as the most important component to prevent hardware failure and data loss, as well as the brand image loss that would soon follow. Samsung Electronics recognizes that product reliability is the most important aspect of our business, and answers the needs of PC manufacturers, while it leverages our most strategic investments. As a result, the Samsung HDD has been recognized as the most reliable products by major PC OEM manufacturers, which has advanced Samsung's global OEM position. This page provides a brief description of how Samsung improved product reliability. It would have been impossible to achieve the recent advances in the high product reliability of our HDD product by improving single aspects of the technology or process. Therefore, it could only be achieved by innovation of the entire process from the product design to quality assurance. The most frequent problem that causes HDD malfunction is the collision of the head and disk, a result of the shock that occurs during the transporting or installation of the HDD. Therefore, reducing the possibility of collision between the head and the disk was seen by Samsung to be very important, if significant enhancement of product reliability was to be achieved. By optimizing the head actuator design in the early product design stage, Samsung eventually succeeded in maximizing he shock-resistance without the degradation of the performance. ImpacGuard TM, Samsung's patented technology, is designed to prevent any head actuator vibration during a non-operating environment, which reduces the possibility of collision between the head and the disk even further. Besides, HDD parts can also fail due to corrosion or contamination. Samsung analyzed and eliminated these kinds of problems, at the source, and in advance, by applying the best failure analysis technology adapted from our experience in the semi- conductor business. For example, the microscopic pin holes on the disk surface causes corrosion, which then causes one type of hardware failure. Samsung analyzed this fact to solve the problem in cooperation with our disk component suppliers. Automation of the manufacturing process was inescapable, since the HDD consists of microscopic parts using a micrometer. For example, four screws are used to assemble the disk onto the HDD. When this process is performed by manual labor, the torques for each screw will be different, which, in turn, causes minute, but critical, distortions of the disk. Also, when assembling the head actuator onto the disk, even an infinitesimal misalignment can cause the head to scratch the disk. With the most advanced automated manufacturing line in the industry, Samsung minimizes this potential quality deviation that is possible by changes in the manufacturing process. In addition, our specialized technology for HDD manufacturing is applied in the quality assurance stage of production. As a result, our customers are allowed to focus on their core business, reliably, in the most stable storage environment available, anywhere on earth.

2. Reduced power consumption
HHDD uses less electricity. Through the OS paging-out process (virtual memory manager stores unnecessary data onto the hard disk drive), personal computers regularly write data onto the hard disk drive. In other words, every time data is stored the hard disk drive, the hard drive needs to spinup, consuming electricity: the more frequent the writing, the more electricity is consumed. HHDD, however, enables write-caching of regular data using flash memory in order to minimize the need for the hard disk drive to spin-up, thereby reducing the system's overall power consumption.
3. Improved durability and reliability
HHDD offers improved durability and reliability. Insofar as the need for the HDD to spin-up is minimized, this also serves to shorten the duty cycle of the HDD, lowering the probability of headmedia collisions and errors (off-track write, etc). This can lead to increasing the MTBF.

What is PMR?

PMR Technology
Growth of the HDD industry has in the past been explosive, as recording density effectively doubled each year. But since 2003 this growth rate has radically slowed down, leveling off at about 30-40% a year. This slowdown has been attributed to difficulties in further increasing the density to meet continuing demands for ever-higher recording density. As a result, the HDD industry has continued to devise new technologies capable of allowing for higher recording densities. One such technology is the recording method known as PMR (Perpendicular Magnetic Recording).

Technology Overview

PMR (Perpendicular Magnetic Recording) and LMR (Longitudinal Magnetic Recording) are recording methods. As indicated by their names, PMR arranges magnetized cells vertically while LMR does so in a horizontal fashion. This vertical arrangement allows PMR to record a greater number of data bits in the same area. The primary reason why density is limited through LMR is a result of what is called superparamagnetism. Superparamagnetism refers to the phenomenon by which magnetized materials move closer as the density increases, to the point where they eventually interfere with one another. As magnetized cells become unstable and as their magnetism changes direction, any stored data can be rendered unusable. By avoiding superparamagnetism, PMR enables one to further increase recording density. It is believed that PMR will reach a maximum recording density of 1 TB/in (LMR: 200 GB/in ).

Longitudinal Recording

Ring Inductive Write Element

Shield 2 P1 P2

Perpendicular Recording
Monopole Inductive Write Element Read Element GMR Sensor Shield 1 Recording Medium Recording Medium Soft Underlayer Signal Amplitude

V Write

Signal Amplitude

Magnetizations

Return Pole

Distance

Transition region
New form factor Samsung 1.8 HDD

Era of Mobility

Consumers today are on the go. Theyre increasingly enjoying music or movies in new mobile environments. When they drive, theyre often relying on portable navigation systems. And many consumers are now downloading web content to their handsets. As people spend more time on the move, the need keeps growing for greater storage capacity on their mobile devices. Thus designers of portable consumer electronics and ultra-mobile PCs are all focused on storage these days. Whether the device is an MP3 player, PMP, navigation system, tablet PC or camcorder, storage matters, along with issues like durability, noise and power consumption. Samsung has been taking steps to address all these issues when it comes to storage for the handheld and portable device market. The latest result is a new cutting-edge 1.8 HDD that pleases both device manufacturers and end users.
60 films 135 minutes 1,500 music videos 15,000 mp3 music

2.5HDD

1.8HDD
The core of all your amusement, SAMSUNG Spinpoint N Series.

54.0 (unit / mm)

Size comparison between 2.5 and 1.8 HDD
Advantages of Samsungs 1.8 HDD
1. High capacity in a single slim disk
Samsungs 1.8 HDD has a single 80GB platter enabled by PMR (Perpendicular Magnetic Recording) technology. Storing mass data in a single slim disk enhances portability. Users on the move can comfortably enjoy TV episodes, audio books, photo albums and their entire music library on their mobile devices. All this personal entertainment is made possible by the high capacity of this 1.8 HDD.
2. Enhanced shock resistance
By modifying the cover and head-stack design, the Samsung 1.8 HDD has better stiffness and enhanced resistance to shock, which are the critical factors to consumers for their mobile devices. In addition, the new HDD incorporates FFS (Free Fall Sensors), which respond to host commands and offer protection when the drive falls.

3. Quiet operation

Noise is among the biggest issues for HDDs in portable audio/video applications. No one wants to hear the clicking sounds of the HDD while listening to music or recording videos. With its innovative grooved cover design, the 1.8 HDD prevents acoustic noise from leaking out. In addition, Samsung's SilentSeek technology controls the actuator and thus reduces noise.
Can't play without N Series.
4. Lower power consumption
The SoC (System on Chip) optimized for power efficiency on 0.85 drives also successfully reduces power consumption in Samsungs 1.8 HDD. And the systems Active Power Controller intelligently detects five different power consumption levels Active, Active Idle, Float Idle, Low Power Idle, and Stand-by controlling power consumption according to each usage. Additionally, in order to achieve longer battery life on a portable device, the spin speed varies from 4200rpm to 3600rpm. All these efforts contribute to reducing power consumption by 30% compared to other 1.8 drives on the market.

Spinpoint T166 SATA

80.0/160.0/320.0/500.0GB

Capacity1

80GB 8MB HD080GJ 16MB

HD160HJ

HD320KJ HD321KJ

HD500LJ HD501LJ

DRIVE CONFIGURATION Interface Bytes per Sector Buffer DRAM Size Serial ATA II 3.0Gbps / 16 MB
ENVIRONMENTAL SPECIFICATIONS Temperature -Operating -Non-operating -Thermal Gradient (max.) 0~60C -40~70C 20C/hr
PERFORMANCE SPECIFICATIONS Read Seek Time (typ.) -Track to track -Average -Full Stroke Average Latency Rotational Speed2 Data Transfer Rate -Media to/from Buffer (max.) -Buffer to/from Host (max.) Drive Ready Time (typ.) 135 MB/sec 300 MB/sec 10 sec 0.8 ms 8.9 ms 18 ms 4.17 ms 7,200 rpm
Humidity (non-condensing) -Operating -Non-operating Linear Shock (1/2 sine pulse) -Operating, 2ms -Non-operating, 2ms 80-160GB 250-500GB Altitude (relative to sea level) -Operating -Non-operating -1,000 to 10,000 feet -1,000 to 40,000 feet 63 G 350 G 300 G 5~90 % 5~95 %
POWER REQUIREMENTS Voltage RELIABILITY SPECIFICATIONS Non-recoverable Read Error MTBF 1 sector in 10 bits

+5V5% / +12V10%

250/320GB 2.3A 12.8W 8.8W 7.6W 0.7/1.2W 0.7/1.2W 400/500GB 2.4A 9.5W 8.0 W 8.2W 0.7/1.2W 0.7/1.2W
80/160GB Spin Up Current (12V) Seek Idle Standby5 Sleep5

2.0A 9.5W 8.0W 6.5W

600,000 POH 50,years
Max. 167GB Formatted Capacity Per Disk Serial ATA 3.0Gbps Interface Support SATA Native Command Queuing Feature set Device Initiated SATA Power Management Staggerd Spin-up Support High Speed Dual Digital Signal Processor (DSP) Based Architecture ATA S.M.A.R.T. Compliant ATA Automatic Acoustic Management Feature Set ATA 48-bit Address Feature Set ATA Streaming Feature Set(Optional) ATA Device Configuration Overlay Feature Set NoiseGuardTM SilentSeekTM

Read/Write

Start/Stop Cycles (Ambient) Component Design Life

0.5/1.0W 0.5/1.0W

ACOUSTICS (AVERAGE SOUND POWER)3 Idle 80-160GB 250-500GB Random Read/Write 80-160GB 250-500GB
2.3 Bel 2.7 Bel 2.7 Bel 2.9 Bel

POWER REQUIREMENTS Voltage +5V5% / +12V10% 0.8 / 2.0 A 10.5 W 10.0 W 8.6 W 8.4 W 1.30 (0.60 with DIPM) W 1.30 (0.60 with DIPM) W
Spin Up Current (max. 5V/12V) Seek6 (typ.) Read/Write on-Track (typ.) Active Idle (typ.)
Low Power Idle (typ.) Standby (typ.) Sleep (typ.)
PHYSICAL DIMENSION Height Width Depth Weight 26.10 mm 147.00 mm 101.60 mm 651 g
1. 1MB=1,000,000 Bytes 1GB=1,000,000,000 Bytes *Accessible capacity may vary as some OS uses binary numbering system for reported capacity 2. 7,200 RPM class, actual speed can be different a little 3. Averaged value under performance mode 4. No error, performance loss less than 15% 5. No data loss, performance loss less than 15% 6. Random seek with 30% duty cycle

Spinpoint T133

300GB 8MB

HD300LD

HD400LD
PERFORMANCE SPECIFICATIONS Interface Bytes per Sector Buffer DRAM Size2 Number of Disks/Heads UDMA/8 MB 3/6
ENVIRONMENTAL SPECIFICATIONS Temperature -Operating -Non-operating -Thermal Gradient (max.) Humidity (non-condensing) 0~60C -40~70C 20C/hr
PERFORMANCE SPECIFICATIONS Read Seek Time (typ.) -Track to track -Average -Full Stroke Average Latency Rotational Speed2 Maximum Data Transfer Rate -Media to/from Buffer -Buffer to/from Host Drive Ready Time (typ.) 400~1000Mb/sec 100 MB/sec 10 sec 0.8 ms 8.9 ms 18 ms 4.17 ms 7,200 rpm
-Operating, 2ms -Non-operating, 2ms Linear Shock (1/2 sine pulse) -Operating, 2ms -Non-operating, 2ms

5~90 % 5~95 %

63 G 300 G
Vibration (swept sine, 0.5 octave per minute) Operating 5 - 300 Hz- 300 Hz- 300 Hz Non-operating 5 - 500 Hz Altitude (relative to sea level) -Operating -1,000 to 10,000 feet -1,000 to 40,000 feet 2.0 G0-p 0.5 G0-p 1.0 G0-p 2.0 G0-p
RELIABILITY SPECIFICATIONS Non-recoverable Read Error 1 in 1014 bits 600,000 POH 50,years

-Non-operating

Maximum 133GB formatted capacity per disk Bowl type architecture Fluid Dynamic Bearing (FDB) motor technology Low power seek control with PWM driver Multi Sinusoidal Seek (MSS) algorithm S.M.A.R.T. Command Trasnport (SCT) featrure Adaptive error recovery algorithm Dynamic anti-stiction algorithm Auto-reassign of potential data error location ATA Security Mode feature ATA Host Protected Area feature ATA Automatic Acoustic Management feature ATA Streaming feature ATA Device Configuration Overlay feature Permuted RLL/ECC on-the-fly error correction AHCI compliant RoHS compliant NoiseGuardTM SilentSeekTM ImpacGuardTM

POWER REQUIREMENTS Voltage Spin Up Current (12V) +5V5% / +12V10% 2.0 A 9.5 W 8.0 W 6.5 W 0.7/1.5 W 0.7/1.5 W
Max. 160GB Formatted Capacity Per Disk Serial ATA 3.0Gbps Interface Support SATA Native Command Queuing Feature set On-the-fly(OTF) error correction Supports all logical geometries as programmed by the host Fluid Bearing Spindle Motor Technology Noise predictive PRML read channel Dynamic anti-stiction algorithm ATA S.M.A.R.T. Compliant ATA Automatic Acoustic Management Feature Set ATA 48-bit Address Feature Set ATA Streaming Feature Set(Optional) ATA Device Configuration Overlay Feature Set NoiseGuard SilentSeek
PHYSICAL DIMENSION ACOUSTICS (AVERAGE SOUND POWER)3 Idle Performance Seek Quiet Seek 2.45 Bel 2.80 Bel 2.75 Bel Height Width Depth Weight 40/80GB 120/160GB 1 in 4 in 5.75 in 0.99g 1.02g
1. 1MB=1,000,000 Bytes 1GB=1,000,000,000 Bytes. *Accessible capacity may vary depending on operating environment and formatting 2. 7,200 RPM class. Actual speed can be different a little 3. Averaged value with a high performance cover 4. Random seek with 30% duty cycle. 5. Power consumption with/without slumber mode.

Spinpoint P120 SATA

SP2004C

SP2504C

DRIVE CONFIGURATION Interface Buffer DRAM Size2 Bytes per Sector Serial ATA 3.0 Gbps 8 MB 512
ENVIRONMENTAL SPECIFICATIONS Temperature -Operating -Non-operating -Thermal Gradient (max.) 0 ~ 60 C -40 ~ 70 C 20 C/hr
PERFORMANCE SPECIFICATIONS Read Seek Time (typ.) -Track to Track -Average -Full Stroke Average Latency Rotational Speed Data Transfer Rate -Media to/from Buffer (max.) -Buffer to/from Host (max.) Drive Ready Time (typ.) 973 MB/sec 300 MB/sec 7 sec 0.8 ms 8.9 ms 18 ms 4.17 ms 7,200 rpm
Humidity (non-condensing) -Operating -Non-operating Linear Shock (1/2 sine pulse) -Operating, 2ms -Non-operating, 2ms Vibration (swept sine, 1 octave per minute) Operating 5 ~ 21 Hz 21 ~ 300 Hz Non-operating 5 ~ 21 Hz 0.195 (double amplitude) 8 Gp-p 0.034 (double amplitude) 1.5 Gp-p 63G 350G 5 ~ 90 % 5 ~ 95 %
21 ~ 500 Hz Altitude (relative to sea level) -Operating -Non-operating
-1,000 to 10,000 ft -1,000 to 40,000 ft
125GB Formatted Capacity Per Disk Serial ATA 3.0Gbps Interface Support SATA Native Command Queuing Feature set Device Initiated SATA Power Management Staggered Spin-up Support High Speed Dual Digital Signal Processor (DSP) Based Architecture ATA S.M.A.R.T. Compliant ATA Automatic Acoustic Management Feature Set ATA 48-bit Address Feature Set ATA Streaming Feature Set ATA Device Configuration Overlay Feature Set NoiseGuardTM SilentSeek
POWER REQUIREMENTS ACOUSTICS (AVERAGE SOUND POWER) Idle Random Read/Write 2.5 Bel 2.8 Bel Voltage Spin Up Current (max.) Seek (typ.)3 Read/Write On-Track (typ.)

+5V5%,+12V10% 650 / 1900 mA 9.5 W 8.5 W 7.5 W 0.7/1.5 W4 0.7/1.5 W4
Idle (typ.) Standby (typ.) Sleep (typ.)
PHYSICAL DIMENSION Height Width Depth Weight 1 in 4 in 5.75 in 1.4 lb
1. 1MB=1,000,000 Bytes 1GB=1,000,000,000 Bytes *Accessible capacity may vary as some OS uses binary numbering system for reported capacity 2. Upper 128 KB is used for firmware 3. 30% duty cycle, random seek 4. Power consumption with / without slumber mode

Spinpoint P120

200GB 8MB

SP2014N

SP2514N
DRIVE CONFIGURATION Interface Bytes per Sector Buffer DRAM Size2 ATA 8 Mbytes
PERFORMANCE SPECIFICATIONS Read Seek Time (typical) -Track to track -Average -Full Stroke Average Latency Rotational Speed Data Transfer Rate -Media to/from Buffer(max.) -Buffer to/from Host(max.) Drive Ready Time(typical) 973 Mbits/s 133 Mbytes/s 7 sec 0.8 ms 8.9 ms 18 ms 4.17 ms 7,200 rpm
Humidity (non-condensing) -Operating -Non-operating Linear Shock (1/2 sine pulse) -Operating, 2ms -Non-operating, 2ms Vibration (swept sine, 1 octave per minute) Operating 5 ~ 21 Hz 21 ~ 300 Hz Non-operating 5 ~ 21 Hz 0.195" (double amplitude) 8 Gp-p 0.034" (double amplitude) 1.5 Gp-p 63 G 350 G 5~90% 5~95%
125GB Formatted Capacity Per Disk Ultra ATA-133 Interface Support Fluid Dynamic Bearing Spindle Motor Technology High Speed Dual Digital Signal Processor (DSP) Based Architecture ATA S.M.A.R.T. Compliant ATA Security Mode Feature Set ATA Host Protected Area Feature Set ATA Automatic Acoustic Management Feature Set ATA 48-bit Address Feature Set ATA Streaming Feature Set ATA Device Configuration Overlay Feature Set NoiseGuardTM SilentSeek
Start/Stop Cycles(Ambient) Component Design Life
POWER REQUIREMENTS ACOUSTICS (AVERAGE SOUND POWER) Idle Random Read/Write 2.5 Bel 2.8 Bel Voltage Spin Up Current(max.) Read/Write On-Track(typ.) Seek (typ.)3
+5V5% / +12V10% 650 / 1900 mA 7.5 W 9.0 W 7.0 W 0.5 W 0.4 W
Idle(typ.) Standby(typ.) Sleep(typ.)
1. 1MB=1,000,000 Bytes 1GB=1,000,000,000 Bytes *Accessible capacity may vary as some OS uses binary numbering system for reported capacity 2. Upper 128 KB is used for firmware 3. 30% duty cycle, random seek 4. Backward compatible with UDMA 33/66/100 Factory default UDMA100 unless customer request

Spinpoint P80SD

HD040GJ

HD080HJ

HD120IJ

HD160JJ

ENVIRONMENTAL SPECIFICATIONS Temperature -Operating -Non-operating -Thermal Gradient (max.) 5~55C -40~70C 20C/hr
PERFORMANCE SPECIFICATIONS Read Seek Time (typ.) -Track to track -Average -Full Stroke Average Latency Rotational Speed Maximum Data Transfer Rate -Media to/from Buffer -Buffer to/from Host Drive Ready Time (typ.) MB/sec 7 sec 0.8 ms 8.9 ms 18.0 ms 4.17 ms 7,200 rpm
Humidity (non-condensing) -Operating -Non-operating Linear Shock (1/2 sine pulse) -Operating, 2ms -Non-operating, 2ms Vibration (swept sine, 1 octave per minute) Operating 5 ~ 21 Hz 21 ~ 300 Hz Non-operating 5 ~ 21 Hz 0.195" (double amplitude) 8 Gp-p 0.034" (double amplitude) 1.5 Gp-p 63 G 350 G 5~90 % 5~95 %

RELIABILITY SPECIFICATIONS Non-recoverable Read Error MTBF 1 sector in 1014 bits 500,000 POH 50,years
80GB Formatted Capacity Per Disk Native Serial ATA 3.0Gbps with Native Command Queuing (NCQ) Fluid Dynamic Bearing Spindle Motor Technology High Speed Dual Digital Signal Processor (DSP) Based Architecture ATA S.M.A.R.T. Compliant ATA Security Mode Feature Set ATA Host Protected Area Feature Set ATA Automatic Acoustic Management Feature Set ATA 48-bit Address Feature Set ATA Streaming Feature Set ATA Power Up In Standby Feature Set ATA Device Configuration Overlay Feature Set Permuted RLL/ECC On-The-Fly Error Correction RoHS-compliant NoiseGuard
POWER REQUIREMENTS ACOUSTICS (AVERAGE SOUND POWER) Idle Random Read/Write 2.5 Bel 2.8 Bel Voltage Spin Up Current(max.) Seek3 (typ.) Read/Write On-Track(typ.)
+5V5% / 12V10% 650 / 1900 mA 9.0 W 8.0 W 6.8 W 0.7 / 1.5 W5 0.7 / 1.5 W5
Idle(typ.) Standby(typ.) Sleep(typ.) PHYSICAL DIMENSION Height Width Depth Weight
1 in 4 in 5.75 in 1.45 lb
SilentSeekTM Hot-Plug & Hot-Swap capable
1. 1MB=1,000,000 Bytes 1GB=1,000,000,000 Bytes *Accessible capacity may vary as some OS uses binary numbering system for reported capacity 2. 384 KB is used for firmware 3. 30% duty cycle, random seek 4. Unless otherwise specified, specifications are for both 1 and 2 disk configurations of Serial-ATA models 5. Power consumption with / without slumber mode

Spinpoint P80

80.0/120.0/160.0GB

80GB 2MB 8MB

SP0842N

SP1243N SP1253N

SP1644N SP1654N
DRIVE CONFIGURATION Interface Bytes per Sector Buffer DRAM Size1 ATA 2/8 Mbytes
PERFORMANCE SPECIFICATIONS Read Seek Time (typical) -Track to track -Average -Full Stroke Average Latency Rotational Speed Data Transfer Rate -Media to/from Buffer(max.) -Buffer to/from Host(max.) Drive Ready Time(typical) 840 Mbits/s 133 Mbytes/s 7 sec 0.8 ms 8.9 ms 18.0 ms 4.17 ms 7,200 rpm
RELIABILITY SPECIFICATIONS Non-recoverable Read Error MTBF(POH) 1 sector in 1014 bits 500,000 POH 50,years
80GB Formatted Capacity Per Disk Ultra ATA-133 Compatible Fluid Dynamic Bearing Spindle Motor Technology High Speed Dual Digital Signal Processor (DSP) Based Architecture ATA S.M.A.R.T. Compliant ATA Security Mode Feature Set ATA Host Protected Area Feature Set ATA Automatic Acoustic Management Feature Set ATA 48-bit Address Feature Set ATA Streaming Feature Set (Optional) ATA Device Configuration Overlay Feature Set Multi-Burst On-The-Fly Error Correction NoiseGuardTM SilentSeek

Controlloed Ramp L/UL

POWER REQUIREMENTS ACOUSTICS (AVERAGE SOUND POWER) Idle 1-Disk 2-Disk Seek 1-Disk 2-Disk 2.8 Bel 3.0 Bel 3.0 Bel 3.2 Bel Voltage Spin Up (max.) Seek (typ.) Read/Write On-Track (typ.) Low Power Idle (typ.) Standby (typ.)
+5V5% 4.5 W 2.6 W 2.3 W 0.9 W 0.25 W 0.20 W
Sleep (typ.) PHYSICAL DIMENSION Length Width Depth Weight7
100 mm 69.85 mm 9.5 mm 107 / 111 g
1. 1MB=1,000,000 Bytes 1GB=1,000,000,000 Bytes *Accessible capacity may vary as some OS uses binary numbering system for reported capacity 2. Upper 128 KB is used for firmware 3. Power-On to Drive Ready 4. 30% duty cycle, random seek 5. Power requirements based on enabled DIPM & 1.5Gbps speed 6. Unless otherwise specified, specifications are for 2-disk configuration 7. 80GB is 107g, higher Cpapcity models are 111g

Spinpoint M5 SATA

60.0/80.0/120.0/160.0/250.0GB

HM061GI

HM080GI

HM121HI

HM160HI

HM250JI

DRIVE CONFIGURATION Interface Buffer DRAM Size2 Bytes per Sector SATA 1.5Gbps 8 Mbytes 512
PERFORMANCE SPECIFICATIONS Read Seek Time (typ.) -Track to Track -Average -Full Stroke Average Latency Rotational Speed Data Transfer Rate -Media to/from Buffer (max.) -Buffer to/from Host (max.) Drive Ready Time (typ.)Mb/s 150 MB/s 3.5 sec 2 ms 12 ms 22 ms 5.6 ms 5,400 rpm
Vibration (swept sine, 1/4 octave per minute) Operating 10 ~ 500 Hz Non-operating 10 ~21 Hz 21 ~ 500Hz 500~800Hz 0.195 in(double amp) 5 Go-p 3 Go-p 1.0 Go-p
RELIABILITY SPECIFICATIONS Non-recoverable Read Error MTBF 1 sector in 1014 bits 330,000 POH 600,000
Up to 160GB formatted capacity per disk TuMR/PMR head with wireless suspension design Serial ATA 1.5Gbps Interface Support SATA Native Command Queuing Feature set Device Initiated SATA Power Management Fluid Dynamic Bearing Spindle Motor Technology Load/Unload Head Technology ATA Security Mode Feature Set ATA S.M.A.R.T. Feature Set ATA Automatic Acoustic Management Feature Set ATA Device Configuration Overlay Feature Set Multi-Burst On-The-Fly Error Correction SilentSeek Hybrid Latch System for Reliability and Quietness
Controlled Ramp Load/Unload
POWER REQUIREMENTS5 ACOUSTICS (AVERAGE SOUND POWER) Idle 1-Disk 2-Disk Random Read/Write 1-Disk 2-Disk 2.2 Bel 2.4 Bel 2.4 Bel 2.6 Bel Voltage Spin Up (max.) Seek4 (typ.) Read/Write On-Track (typ.) Low Power Idle (typ.) Standby (typ.)

+5V5% 4.5 W 2.2 W 2.0 W 0.6 W 0.25 W 0.20 W
Sleep (typ.) PHYSICAL DIMENSION Length Width Depth Weight
3.94 in 2.75 in 0.37 in 0.22 lb
1. 1MB=1,000,000 Bytes 1GB=1,000,000,000 Bytes *Accessible capacity may vary as some OS uses binary numbering system for reported capacity 2. Upper 128 KB is used for firmware 3. Power-On to Drive Ready 4. 30% duty cycle, random seek 5. Power requirements based on enabled DIPM & 1.5Gbps speed 6. Unless otherwise specified, specifications are for 2-disk configuration

Spinpoint M80 SATA

HM080HI

HM120II

HM160JI
DRIVE CONFIGURATION Interface Buffer DRAM Size3 Bytes per Sector SATA 1.5Gbps 8 Mbytes 512
PERFORMANCE SPECIFICATIONS Read Seek Time (typ.) -Track to Track -Average -Full Stroke Average Latency Rotational Speed Data Transfer Rate -Media to/from Buffer (max.) -Buffer to/from Host (max.) Drive Ready Time (typ.)3 530Mb/s 150MB/s 4 sec 2 ms 12 ms 22 ms 5.6 ms 5,400 rpm
Vibration (swept sine, 1/4 octave per minute) Operating 5 ~ 500 Hz Non-operating 10 ~21 Hz 21 ~ 500Hz 500~800Hz 0.195 in(double amp) 5 Go-p 3 Go-p 1.0 Go-p
80GB Formatted Capacity Per Disk TuMR head with wireless suspension design Serial ATA 1.5Gbps Interface Support SATA Native Command Queuing Feature set Device Initiated SATA Power Management Fluid Dynamic Bearing Spindle Motor Technology Load/Unload Head Technology ATA Security Mode Feature Set ATA SMART Feature Set ATA Automatic Acoustic Management Feature Set ATA Device Configuration Overlay Feature Set Multi-Burst On-The-Fly Error Correction SilentSeekTM Hybrid Latch System for Reliability and Quietness
POWER REQUIREMENTS ACOUSTICS (AVERAGE SOUND POWER) Idle 1-Disk 2-Disk Random Read/Write 1-Disk 2-Disk 2.2 Bel 2.4 Bel 2.4 Bel 2.6 Bel Voltage Spin Up (max.) Seek (typ.)5 Read/Write On-Track (typ.) Low Power Idle (typ.) Standby (typ.)
+5V5% 4.5 W 2.1 W 2.0 W 0.60 W 0.25 W 0.20 W
Sleep (typ.) PHYSICAL DIMENSION Height Width Depth Weight
0.37 in 3.94 in 2.75 in 0.22 lb
1. 1MB=1,000,000 Bytes 1GB=1,000,000,000 Bytes *Accessible capacity may vary as some OS uses binary numbering system for reported capacity 2. Upper 128 KB is used for firmware 3. Power-On to Drive Ready 4. 30% duty cycle, random seek 5. Power requirements based on 1.5Gbps speed 6. Unless otherwise specified, specifications are for 2-disk configuration

Spinpoint M60

HM040HC

HM060HC

HM080IC

HM100JC

HM120JC
DRIVE CONFIGURATION Interface Buffer DRAM Size2 Bytes per Sector ATA Mbytes 512
PERFORMANCE SPECIFICATIONS Read Seek Time (typ.) -Track to Track -Average -Full Stroke Average Latency Rotational Speed Data Transfer Rate -Media to/from Buffer (max.) -Buffer to/from Host (max.) Drive Ready Time (typ.)3 495Mb/s 100MB/s 4 sec 2 ms 12 ms 22 ms 5.6 ms 5,400 rpm
Device Initiated Power Management 60GB Formatted Capacity Per Disk GMR/TuMR head with wireless suspension design Fluid Dynamic Bearing Spindle Motor Technology Load/Unload Head Technology ATA Security Mode Feature Set ATA S.M.A.R.T. Feature Set ATA Automatic Acoustic Management Feature Set ATA Device Configuration Overlay Feature Set Multi-Burst On-The-Fly Error Correction Hybrid Latch System for Reliability and Quietness SilentSeekTM
+5V5% 4.5 W 2.1 W 2.0 W 0.65 W 0.25 W 0.25 W

Spinpoint M40 SATA

40.0/60.0/80.0GB

HM060II

HM080JI
PERFORMANCE SPECIFICATIONS Read Seek Time (typ.) -Track to Track -Average -Full Stroke Average Latency Rotational Speed Data Transfer Rate -Media to/from Buffer (max.) -Buffer to/from Host (max.) Drive Ready Time (typ.)3 428Mb/s 150MB/s 4 sec 2 ms 12 ms 22 ms 5.6 ms 5,400 rpm

300G 900G

40GB Formatted Capacity Per Disk GMR head technology with wireless suspension design Ultra ATA-100 Interface Serial ATA 1.5Gbps Fluid Dynamic Bearing Spindle Motor Technology Load/Unload Head Technology ATA Security Mode Feature Set ATA S.M.A.R.T. Feature Set ATA Automatic Acoustic Management Feature Set ATA Device Configuration Overlay Feature Set Multi-Burst On-The-Fly Error Correction SilentSeekTM Hybrid Latch System for Reliability and Quietness
POWER REQUIREMENTS ACOUSTICS (AVERAGE SOUND POWER) Idle 1-Disk 2-Disk Random Read/Write 1-Disk 2-Disk 2.2 Bel 2.4 Bel 2.4 Bel 2.6 Bel Voltage Spin Up (max.) Seek (typ.)4 Read/Write On-Track (typ.) Low Power Idle (typ.) Standby (typ.) Sleep (typ.) +5V5% 4.5 W 2.1 W 2.0 W 0.65 W 0.25 W 0.15 W

1. MB=1,000,000 Bytes 1GB=1,000,000,000 Bytes *Accessible capacity may vary as some OS uses binary numbering system for reported capacity 2. Upper 128 KB is used for firmware 3. Power-On to Drive Ready 4. 30% duty cycle, random seek 5. Unless otherwise specified, specifications are for 2-disk configuration

Spinpoint M40

MP0402H

MP0603H

MP0804H
DRIVE CONFIGURATION Interface Buffer DRAM Size1 Bytes per Sector ATA Mbytes 512
PERFORMANCE SPECIFICATIONS Read Seek Time (typ.) -Track to Track -Average -Full Stroke Average Latency Rotational Speed Data Transfer Rate -Media to/from Buffer (max.) -Buffer to/from Host (max.) Drive Ready Time (typ.)2 431Mb/s 100MB/s 4 sec 2 ms 12 ms 22 ms 5.6 ms 5,400 rpm
Vibration (swept sine, 1/4 octave per minute) Operating -5 ~ 500 Hz Non-operating -10 ~21 Hz -21 ~ 500Hz -500~800Hz Altitude (relative to sea level) 0.195 in(double amp) 5 Go-p 3 Go-p 1.0 Go-p
RELIABILITY SPECIFICATIONS Non-recoverable Read Error MTBF 1 sector in 1014 bits 330,000 POH years

Operating Non-operating

-1000 to 10000 ft -1400 to 50000 ft
40GB Formatted Capacity Per Disk GMR head technology with wireless suspension design Ultra ATA-100 Interface Fluid Dynamic Bearing Spindle Motor Technology Load/Unload Head Technology ATA Security Mode Feature Set ATA S.M.A.R.T. Feature Set ATA Automatic Acoustic Management Feature Set ATA 48-bit Address Feature Set ATA Device Configuration Overlay Feature Set Multi-Burst On-The-Fly Error Correction SilentSeekTM
Controlloed Ramp L/UL Component Design Life
POWER REQUIREMENTS Voltage Spin Up Current (max.) +5V5% 5.0 W 2.4 W 2.4 W 0.85 W 0.25 W 0.1 W
ACOUSTICS (AVERAGE SOUND POWER) Idle 1-Disk 2-Disk Random Read/Write 1-Disk 2-Disk 2.2 Bel 2.4 Bel 2.4 Bel 2.6 Bel
Seek (typ.)3 Read/Write On-Track (typ.) Low Power Idle (typ.) Standby (typ.) Sleep (typ.)
*Accessible capacity may vary as some OS uses binary numbering system for reported capacity 1. Upper 128 KB is used for firmware 2. Power-On to Drive Ready 3. 30% duty cycle, random seek 4. Unless otherwise specified, specifications are for 2-disk configuration

Spinpoint MH80 SATA

HM08HHI

HM12HII

HM16HJI
DRIVE CONFIGURATION Interface Buffer DRAM Size10 OneNAND Flash3 Bytes per Sector PERFORMANCE SPECIFICATIONS Read Seek Time (typ.) -Track to Track -Average -Full Stroke Average Latency Rotational Speed Data Transfer Rate -Media to/from Buffer (max.) -Buffer to/from Host (max.) -NV Cache Read (max)
ENVIRONMENTAL SPECIFICATIONS SATA 1.5Gbps 8 Mbytes 256 MB 512 Temperature -Operating -Non-operating Humidity (non-condensing) -Operating -Non-operating Linear Shock (1/2 sine pulse) 2 ms 12 ms 22 ms 5.6 ms 5,400 rpm 530Mb/s 150MB/s 100MB/s 9MB/s 0.8 sec 4 sec -Operating, 2ms -Non-operating, 1ms Operating -5 ~ 500 Hz Non-operating -10 ~20 Hz -21 ~ 500Hz -500~800Hz Altitude (relative to sea level) Operating Non-operating POWER REQUIREMENTS 1 sector in 1014 bits 600,000 POH 600,000 Voltage Spin Up (max.) Seek5 (typ.) Read/Write On-Track (typ.)8 Read NV Cache (typ.)7 2.2 Bel 2.4 Bel 2.4 Bel 2.6 Bel Write NV Cache (typ.) Low Power Idle (typ.) Standby (typ.) Sleep (typ.) PHYSICAL DIMENSION Height Width Depth Weight 0.37 in 3.94 in 2.75 in 0.22 lb +5V5% 4.50 W 2.10 W 2.00 W 0.85 W 0.75 W 0.60 W 0.25 W 0.20 W -1000 to 10000 ft -1400 to 50000 ft 0.195 in(double amp) 5 Go-p 3 Go-p 1.0 Go-p Vibration (swept sine, 1/4 octave per minute) 325G 1000G 5 ~ 90 % 5 ~ 95 % 5 ~ 55 C -40 ~ 70 C

4200 4200

SATA SATA SATA PATA PATA PATA SATA SATA SATA PATA PATA PATA SATA PATA SATA SATA SATA PATA CEATA PATA CEATA PATA CEATA PATA CEATA PATA CEATA PATA CEATA PATA CEATA PATA CEATA PATA PATA PATA PATA PATA PATA PATA PATA PATA
HM160JI HM120II HM080HI HM160JC HM120IC HM080HC HM120JI HM100JI HM060HI HM120JC HM100JC HM060HC HM040HI MP0402H HM16HJI HM12HII HM08HHI HS061HA HS061HP HS041HA HS041HP HS031GA HS031GP HS021GA HS021GP HS060HB HS060HQ HS040HB HS040HQ HS030GB HS030GQ HS020GB HS020GQ HS12SJB HS12TJB HS10TJB HS080HB HS082HB HS060HB HS06THB HS040HB HS04THB

400 300

2.5"

250 200

M40S M40 MH80S

3.5"

Hybrid HDD

(3600rpm)

(4200rpm)

120 120

1.8"
Why Samsung Hard Disk Drive?
Samsung HDD 2007 Product Guide
Our quality is based on our ACCESS TO FUNDAMENTAL TECHNOLOGY, not only for Samsung's own R&D resources within the HDD division, but also from various R&D resources within the Samsung group. SAIT(Samsung Advanced Institute of Technology) developed Acoustic Noise Suppression Technology, which is utilized in all Samsung HDDs. SAIT also provides Head Stack, Read Channel, Spindle Motor, Servo Control System and Optical Technologies. Similarly, Samsung Electronic's corporate R&D center developed vibration suppression technology.

SAMSUNG AWARD WINNING

Award (amount)

Samsung Semiconductor, Inc.

Product Selection Guide

Memory and Storage August 2007

MEMORY AND STORAGE

DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION ASYNCHRONOUS SRAM HIGH DENSITY, LOW POWER (UtRAM) HIGH-SPEED ASYNCHRONOUS FAST SRAM ASYNCHRONOUS SRAM ORDERING INFORMATION SYNCHRONOUS SRAM SPB & FT SRAM NtRAM LATE-WRITE R-R SRAM DDR / II / II+ SRAM QDR / II / II+ SRAM SYNCHRONOUS SRAM ORDERING INFORMATION MULTI-CHIP PACKAGE NAND/DRAM NOR/SRAM and NOR/UtRAM OneNAND/DRAM NOR/DRAM MOST COMMON MCPS FUSION MEMORY OneNAND moviNAND Flex-OneNAND OneDRAM HARD DRIVES HARD DISK DRIVES FLASH-ENABLED DRIVES HYBRID HARD DRIVES FLASH SOLID STATE DRIVES EXTERNAL OPTICAL DRIVES EXTERNAL DVD INTERNAL OPTICAL DRIVES INTERNAL DVD INTERNAL COMBO INTERNAL CD
3 3-4 4-5 5-8-15 15-16 16-23 24-28-32

DDR3 / DDR2 SDRAM

DDR3 SDRAM UNBUFFERED MODULES

Density 512MB 1GB 2GB

NOTES:
Org 64Mx64 128Mx64 256Mx64

E7=DDR3-800 (5-5-5)

Speed (Mbps) 800/1066/1333 800/1066/1333 800/1066/1333

F8 = DDR3-1066 (7-7-7)

Part Number M378B6474CZ0-C(F7/F8/H9) M378B2873CZ0-C(F7/F8/H9) M378B5673CZ0-C(F7/F8/H9)

G9=DDR3-1333 (8-8-8)

Rank 2
Composition 1Gb(64M x16) * 4 1Gb(128M x8) * 8 1Gb(128M x8) * 16

Voltage: 1.5V

Package RoHS RoHS RoHS

DDR3 SDRAM COMPONENTS

Density 1Gb 1Gb 1Gb
Org 256M x4 128M x8 64M x16

E7=DDR3-800 (6-6-6)

Part Number K4B1G0446C-ZC(F7/F8/H9) K4B1G0846C-ZC(F7/F8/H9) K4B1G1646C-ZC(F7/F8/H9)
G9=DDR3-1333 (9-9-9) Voltage: 1.5V
Package 94ball FBGA 94ball FBGA 112ball FBGA
Package Dimension 11x18mm 11x18mm 11x18mm
DDR2 SDRAM REGISTERED MODULES
Density 512MB 1GB 1GB 1GB 1GB 2GB 2GB 2GB 2GB 2GB 2GB 4GB 4GB
Org 64Mx72 128Mx72 128Mx72 128Mx72 128Mx72 256Mx72 256Mx72 256Mx72 256Mx72 256Mx72 256Mx72 512Mx72 512Mx72
CC=PC2-3200 (DDR2-400 @ CL=3)
Speed (Mbps) 400/533/667 400/533 400/533 400/533/667 400/533/667 400/533 400/533 400/533 400/533/667 400/533/667 533/667 400/533 400/533/667
D5=PC2-4200 (DDR2-533 @ CL=4)
Part Number M393T6553EZA-C(CC/D5/E6) M393T2950EZ3-C(CC/D5) M393T2953EZ3-C(CC/D5) M393T2950EZA-C(CC/D5/E6) M393T2953EZA-C(CC/D5/E6) M393T5750EZ3-C(CC/D5) M393T5660CZ3-C(CC/D5) M393T5663CZ3-C(CC/D5) M393T5750EZ3-C(CC/D5/E6) M393T5660CZA-C(CC/D5/E6) M393T5663CZA-C(D5/E6) M393T5160CZ0-C(CC/D5) M393T5160CZA-C(CC/D5/E6)
Parity Register Y N N Y Y N N N Y Y Y N Y
Composition (64M x8)*9 (128M x4)*18 (64M x8)*18 (128M x4)*18 (64M x8)*18 (128M x4)*36 (256M x4)*18 (128M x8)*18 (128M x4)*36 (256M x4)*18 (128M x8)*18 st. (512M x4)*18 st. (512M x4)*18
Package Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free
E6=PC2-5300 (DDR2-667 @ CL=5)

Voltage:1.8V

Module Height=1.2"
DDR2 SDRAM FULLY BUFFERED MODULES
Density 512MB 512MB 1GB 1GB 2GB 2GB 4GB 4GB

NOTES: 50=Intel AMB

Org 64Mx72 64Mx72 128Mx72 128Mx72 256Mx72 256Mx72 512Mx72 512Mx72

60: IDT AMB

E7=DDR2-800 (5-5-5)

Package Dimension 10x11mm 10x11mm 11x13mm 11x18mm 11x18mm 11x18mm 11x18mm
DDR SDRAM 1U DIMM MODULES: REGISTERED
Org 64Mx72 128Mx72 256Mx72
B0 = DDR266 (133MHz @ CL=2.5) Type: 184-pin
Speed (Mbps) 333/400 333/400 333/400
A2 = DDR266 (133MHz @ Cl=2)
Composition (64Mx8)*9 (128Mx4)*18 (128Mx4)*36
Part Number M312L6523DZ3 - CB3/CCC M312L2920DZ3 -CB3/CCC M312L5720DZ3-CB3/CCC
Component Package FBGA FBGA FBGA

# Banks Module 2

Notes Pb-free Pb-free Pb-free
B3 = DDR333 (166MHz @ CL=2.5)
CC = DDR400 (200MHz @ CL=3)

DDR DRAM SODIMM MODULES

Density 512MB 1GB 1GB
Org 64Mx64 128MX64 128MX64
B0 = DDR266 (133MHz @ CL=2.5) Type: 200-pin, Double Sided

Speed (Mbps) 333

A2 = DDR266 (133MHz @ Cl=2) Height(in): 1.25
Composition (32M x 16)*4 (64M x 8)*16 (64M x 8)*16
Part Number M470L6524DU0-CB300 M470L2923BN0 - C(L)B3 M470L2923DV0-CB300

Notes Pb-free Pb-free

DDR SDRAM DIMM MODULES: UNBUFFERED
Density 512MB 512MB 1GB 1GB
Org 64MX64 64Mx72 128Mx64 128Mx72
Speed (Mbps) 333/400 333/400 333/400 333/400
A2 = DDR266 (133MHz @ Cl=2) Package: TSOP components
Composition (64M x8) *8 (64M x 8)*9 (64M x 8)*16 (64M x 8)*18
Part Number M368L6523DUS-CB3/CCC M381L6523DUM-CB3/CCC M368L2923DUN-CB3/CCC M381L2923DUM-CB3/CCC
Notes Pb-free Pb-free Pb-free Pb-free
B3 = DDR333 (166MHz @ CL=2.5) Voltage: 2.5V

DDR SDAM / SDRAM

DDR SDRAM COMPONENTS
Density 256M 256M 256M 256M 256M 256M 512M 512M 512M 512M 512M 512M 512M 512M
Org 64Mx4 64Mx4 32Mx8 32Mx8 16Mx16 16Mx16 128Mx4 128Mx4 64Mx8 64Mx8 64Mx8 32Mx16 32Mx16 32Mx16
B0 = DDR266 (133MHz @ CL=2.5)
Speed (Mbps) 266 333/400 333/400 333/400 333/400 333/400 333/400 333/400 333/400 333/400 333/400 333/400 333/400 333/400
Part Number K4H560438H-UC(L)B0 K4H560438H-ZC(L)CC/B3 K4H560838H-UC(L)B3/CCC K4H560838H-ZC(L)B3/CCC K4H561638H-UC(L)/B3/CCC K4H561638H-ZC(L)B3/CCC K4H510438D-ZC(L)B3/CCC K4H510438D-ZC(L)B3/CCC K4H510838D-UC(L)B3/CCC K4H510838D-ZC(L)B3/CCC K4H510838D-UC(L)B3/CCC K4H511638D-UC(L)B3/CCC K4H511638D-ZC(L)B3/CCC K4H511638D-UC(L)B3/CCC
Package 66 pin TSOP 60 ball FBGA 66 pin TSOP 60 ball FBGA 66 pin TSOP 60 ball FBGA 60 ball FBGA 60 ball FBGA 66 pin TSOP 60 ball FBGA 66 pin TSOP 66 pin TSOP 60 ball FBGA 66 pin TSOP
Notes Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free
1U SDRAM DIMM MODULES, PC133 / PC100 COMPLIANT: REGISTERED

LOW-PROFILE DIMMs (1.2-INCH HEIGHT)
Density 128MB** 256MB 512MB 1GB 1GB 2GB Org 16Mx72 32Mx72 64Mx72 128Mx72 128Mx72 256Mx72 Speed PC133 PC133 PC133 PC133 PC133 PC133
Type: 168 pin, Double sided
Composition (16x8)*9 (32Mx8)*9 (64Mx4)*18 (St.128Mx4)*18 (128Mx4)*18 (St.128Mx4)*18
Part Number M390S1723TU - C7A00 M390S3253HUU - C7A00 M390S6450HUU - C7A00 M390S2858ETU - C7A00 M390S2950DUU - C7A00 M390S5658DUU - C7A00

Voltage: 3.3V

# Banks Module 2 2

stacked, avail Q204

Refresh 4K 8K 8K 8K 8K 8K

Remarks

stacked
NOTES: St.= Stacked components

Package: TSOP Components

SDRAM SODIMM MODULES
Density 128MB 256MB 256MB 512MB 512MB Org 16Mx64 32Mx64 32Mx64 64Mx64 64Mx64 Speed PC133 PC133 PC133 PC133 PC133 Composition (8Mx16)*8 (16Mx16)*8 (32Mx16)*4 (32Mx16)*8 (64Mx8)*16

Interface: SSTL-2

Part Number M464S1724ITS-L7A00 M464S3254HUS-L7A00 M464S3354DUS-C(L)7A M464S6554DUS-C(L)7A M464S6453HV0-C75/L7500

# Banks: 4

Height (in) 1.15 1.25 1.25 1.18 1.25

Latency: CL6

Refresh: 8K/32ms

NOTES: DS = Double-Sided

L = Commercial Temp., Low Power
SDRAM DIMM MODULES, PC133 COMPLIANT: UNBUFFERED
Density 128MB 256MB 256MB 256MB 256MB 512MB 1GB Org 16Mx72 32Mx64 32Mx72 32Mx64 32Mx64 64Mx64 128Mx64 Speed (Mbps) PC133 PC133 PC133 PC133 PC133 PC133 PC133

Package: TSOP components

Composition 128M: (16Mx8)*9 256M: (16Mx8)*16 256M: (16Mx8)*18 256M: (32Mx8)*8 256M: (32Mx8)*8 256M: (32Mx8)*16 512M: (64Mx8)*16
Part Number M374S1723KUS-C7A00 M366S3323KUS- C7A00 M374S3323KUS-C7A00 M366S3253HUS-C7A00 M366S3253HUS-C7A00 M366S6453HUS-C7A00 M366S2953DUS-C7A00

NOTES: Type: 168 pin

SDRAM / MOBILE SDRAM

SDRAM COMPONENTS

Density 64Mb** 64Mb** 128Mb** 128Mb** 256Mb 256Mb 256Mb 512Mb 512Mb 512Mb 512Mb 512Mb Org 8Mx8 4Mx16 16Mx8 8Mx16 64Mx4 32Mx8 16Mx16 128Mx4 64Mx8 128Mx4 64Mx8 32Mx16 Speed (Mbps) 133 133/143/133/133 133/Part Number K4S640832K-UC(75)000 K4S641632K-UC(L)(75/60)000 K4S280832I-UC(L)(75)000 K4S281632I-UC(L)(75/60)000 K4S560432H-UC(L)(75)000 K4S560832H-UC(L)(75)000 K4S561632H-UC(L)(75/60)000 K4S510632D-UC(L)(75)000 K4S510732D-UC(L)(75)000 K4S510432D-UC(L)(75)000 K4S510832D-UC(L)(75)000 K4S511632D-UC(L)(75)000 Refresh 4K 4K 4K 4K 8K 8K 8K 8K 8K 8K 8K 8K Pkg TSOP Remarks

stacked stacked

NOTES: 1 L = Commercial Temp., Low Power 2 # Banks: 4
3 Package: TC = TSOP; UC = Lead Free 4 Voltage: 3.3V
5 Speed: PC133 (133MHz CL=3/PC100 CL2) 6 For Ind. Temp., check with SSI Marketing

MOBILE SDRAM COMPONENTS

Density 64Mb 64Mb 64Mb 128Mb 128Mb 128Mb 128Mb 128Mb 128Mb 256Mb 256Mb 256Mb 256Mb 256Mb 256Mb 256Mb 256Mb 512Mb 512Mb 512Mb 512Mb 512Mb 512Mb 512Mb 512Mb Org 4Mx16 4Mx16 4Mx16 8MX16 8MX16 8MX16 4MX32 4MX32 4MX32 16Mx16 16Mx16 16Mx16 16Mx16 8Mx32 8Mx32 8Mx32 8Mx32 32Mx16 32Mx16 32Mx16 32Mx16 16Mx32 16Mx32 16Mx32 16Mx32

RIMM MODULES
Density 128MB ECC 256MB ECC 512MB ECC 128MB NON-ECC 256MB NON-ECC Org x18 x18 x18 x16 x16 Speed (Mbps) 800/1066Mbps 800/1066Mbps 800/1066Mbps 800/1066Mbps 800/1066Mbps # of Devices 8 Part Number MR18R1624EG0-CM8/T9 MR18R1628EG0-CM8/T9 MR18R162GEG0-CM8/T9 MR16R1624EG0-CM8/T9 MR16R1628EG0-CM8/T9 Component 288Mb 288Mb 288Mb 256Mb 256Mb

RDRAM COMPONENTS

Density 288Mb 128Mb *

NOTES: Voltage: 2.5 v

Org x18 x16
Speed (Mbps) 800/1066 800/1066
Part Number K4R881869E-GCM8/T9 K4R271669F-SCK8/S8
Refresh 16K/32ms 16K/32ms
Package 92ball FBGA 54ball FBGA
GRAPHICS MEMORY SELECTION GUIDE
Type GDDR4 GDDR3 Density 512Mb 512Mb 256Mb GDDR2 512Mb 256Mb 256Mb 128Mb 8Mx16 Org 16Mx32 16Mx32 8Mx32 32Mx16 16Mx16 16Mx16 4Mx32 Part Number K4U52324Q K4J52324Q K4J55323Q K4N51163Q K4N56163Q K4D551638 K4D263238 K4DPackage VDD/VDDQ 136 FBGA* 136 FBGA* 136 FBGA 84 FBGA FBGA 66 TSOPII 144 FBGA 66 TSOPII Speed 1.8/1.8V 1.95/1.95V 1.8/1.8V 1.9/1.9V 1.8/1.8V 1.9/1.9V 1.8/1.8V 1.9/1.9V 1.8/1.8V 2.5/2.5V 2.5/2.5V 2.5/2.5V Bin (MHz) 1100/1200/CS 700/800 900/1000/1200 700/800/ 900/1000 350/400 450/500 350/400/450/500 200/250 200/250 200/250
*lead free only * clock cycle time 09 1A 11 0.71ns 0.83ns 0.90ns 1ns 1.11ns (1400MHz) (1200MHz) (1100MHz) (1000MHz) (900MHz)
** all products are 4 banks 12 1.25ns (800MHz) 14 1.429ns (700MHz) 16 1.667ns (600MHz) 20 2.0 ns (500MHz) 22 2.2 ns (450MHz) 25 2.5 ns (400MHz) 2A 2.86 NS (350MHz) 50 3.3 ns 4.0 ns 5.0 ns (300MHZ) (250MHz) (200MHz)
Part No. Suffix Description
Product chart for fusion memory solution, OneDRAM, is on page 23.
DRAM Ordering Information
DRAM ORDERING INFORMATION
K 1 1. 2. 3. Memory (K) DRAM:4 Small Classification A:Advanced Dram Technology B:DDR3 SDRAM D: DDR SGRAM E: EDO F: FP H: DDR SDRAM J: GDDR3 SDRAM K: Mobile SDRAM PEA L: Mobile L2RAM M: Mobile SDRAM N: DDR SGRAM II R: Direct RDRAM S: SDRAM T: DDR SDRAM II U: GDDR4 SDRAM V: Mobile DDR SDRAM PEA X: Mobile DDR SDRAM Y: XDR DRAM Z: Value Added DRAM PEA: Power Efficient Address 4~5. Density, Refresh 111: 1G, 64K/16ms 15: 16M, 1K/16ms 16: 16M, 2K/32ms 17: 16M, 4K/64ms 26: 128M, 4K/32ms 27: 128M, 16K/32ms 28: 128M, 4K/64ms 32: 32M, 2K/32ms 40: 4M, 512/8ms 41: 4M, 1K/16ms 44: 144M, 16K/32ms 50: 512M, 32K/16ms 51: 512M, 8K/64ms 52: 512M, 8K/32ms 54: 256M, 16K/16ms 55: 256M, 4K/32ms 56: 256M, 8K/64ms 57: 256M, 16K/32ms 58: 256M, 8K/32ms 62: 64M, 2K/16ms 64: 64M, 4K/64ms 9. 8. X 3 X 4 X 5 X 6 X 7 X 8 X 9 X X 12 X 13 X 14 X 15 X 16 X 17 X 18 66: 64M, 8K/64ms 68: 768M, 8K/64ms 72: 72M, 8K/32ms 76: 576M, 32K/32ms 80: 8M, 2K/32ms 88: 288M, 16K/32ms 89: 288M, 8K/32ms 1G: 1G, 8K/64ms 2G: 2G, 8K/64ms 4G: 4G, 8K/64ms 2A: 128M, 4K/64ms with TCSR 5A: 256M, 8K/64ms with TCSR 6A: 64M, 4K/64ms with TCSR 6~7. Organization 01: x1 04: x4 02: x2 05: x4 (2CS) 03: x2 (Including x1) S: SSTL-2, 2.2V, 1.8V U: DRSL, 1.8V, 1.2V Y: SSTL(LP), 2.5V, 2.5V 10. Generation M: 1st Generation A: 2nd Generation B: 3rd Generation C: 4th Generation D: 5th Generation E: 6th Generation F: 7th Generation G: 8th Generation H: 9th Generation I: 10th Generation J: 11th Generation K: 12th Generation Y: Partial DRAM(2nd) Z: Partial DRAM (for RAMOSTAK Product) 15: x16 (2CS) 11. ---- 12. Package - Advanced DRAM Technology G: WBGA T: TSOP2 Z: BOC(LF) 2: 2Bank 5: 16Bank 3: 4Bank 6: 32Bank - DDR SDRAM J: TSOP2-400(LF, DDP) K: TSOP2-400(DDP) G: BOC, WBGA P: BOC(DDP) N: STSOP2 S: POP(DDP) - DDR SDRAM II G: BOC S: BOC(Smaller) R: WLP - DDR3 SDRAM G: BOC - DDR SGRAM E: FBGA(LF, DDP) J: FBGA(DDP) P: FBGA(LLDDP) N: FBGA(1DQS,LF) L: TSOP2-400(LF) Q: TQFP G : FBGA V: FBGA(LF) M: FBGA(1DQS) H: BOC T: TSOP2-400 U: TQFP(LF) Z: BOC(LF) Z: BOC(LF) Y: BOC(Smaller, LF) T: TSOP2-400 U: TSOP2-400(LF) Z: BOC(LF) Q: ISM V: STSOP2(LF) X: POP(LF, DDP) L: TSOP2-400F(LF)

K 2 X 3 X 4 X 5 X 6 X 7 X 8 X 9 X X 12 X 13 X 14 X 15 X 16 X 17 X 18 - EDO & FP (tRAC) 40: 40ns 50: 50ns - Direct RDRAM (tCC, tRAC) C6: 300MHz, 53.3ns w/ consumer PKG C8: 400MHz, 45ns w/ consumer PKG C9: 533MHz, 32ns w/ consumer PKG G6: 300MHz(3.3ns), 53.3ns K7: 356MHz(2.8ns), 45ns K8: 400MHz(2.5ns), 45ns M8: 400MHz(2.5ns), 40ns M9: 533MHz(1.9ns), 35ns N1: 600MHz(1.667ns), 32ns N9: 533MHz(1.9ns), 32ns P3: 667Mhz(1.5ns), 31ns R6: 800Mhz(1.25ns), 27ns S8: 400MHz, 45ns SC S9: 533MHz(1.9ns), 35ns SC T9: 533MHz(1.9ns), 32ns, tDAC 3 DS: Daisychain Sample *SC (Short channel) - Mobile SDRAM 15: 15ns@CL2 1L: 10ns@CL3 80: 8ns@CL3 90: 9.0ns@CL3(12ns@CL2) 95: 9.5ns@CL3(12ns@CL2) DP: Daisychain (PCB) DS: Daisychain Sample DY: Daisychain (Sanyo PCB) - Mobile SDRAM PEA 1L: 10ns@CL3 75: 7.5ns@CL3 90: 9.0ns@CL3(12ns@CL2) - Mobile DDR SDRAM C0: 15ns@CL3 C3: 7.5ns@CL3 CA: 9ns@CL3 DP: Daisychain (PCB) DS: Daisychain DY: Daisychain (Sanyo PCB) C2: 10ns@CL3 C6: 6ns@CL3 60: 6ns@CL3 1H: 10ns@CL2 75: 7.5ns@CL3 45: 45ns 60: 60ns - Mobile DDR SDRAM PEA C3: 7.5ns@CL3 CA: 9ns@CL3 - Mobile L2RAM L0: 100Mhz, CL3 L2: 166Mhz, CL4 - SDRAM (tCC: Default CL3) 10: 10ns, PC66 15: 15ns 1H: 10ns@CL2, PC100 33: 3.3ns 45: 4.5ns 55: 5.5ns 60: 6ns 70: 7ns 75: 7.5ns, PC133 7B: 7.5ns PC133, CL3, TRCD2, TRP2 7C: 7.5ns PC133, CL2, TRCD2, TRP2 80: 8ns 96: 9.6ns DP: Daisychain (PCB) DY: Daisychain (Sanyo PCB) < Only SDRAM TPB Code > S0: 7.0ns BIN U0: 6.0ns BIN W0: 8.0ns BIN 20: 2.0ns 22: 2.2ns(450MHz) 30: 3ns 35: 3.5ns 3N 3.32ns(301MHz) 45: 4.5ns 55: 5.5ns 70: 7ns 2B: 2.94ns(340MHz) 5A: 5ns@CL3(TRCD3, TRP3) < Only SDRAM TPB Code> S0: 4.0ns BIN - DDR SGRAM II 12: 1.25ns 15: 1.5ns (667MHz) 18: 1.818ns 2A: 2.86ns(350MHz) 22: 2.2ns 30: 3.0ns 37: 3.75ns 14: 1.429ns 16: 1.667ns 1K: 1.996ns 20: 2ns 25: 2.5ns 33: 3.3ns
NOTES: 1) gBGA packages are registered trademarks of Tessera. 2) (M): Mirror 3) (LF): Lead Free
- GDDR3 SDRAM C6: 6ns@CL3 11: 1.1ns 14: 1.429ns 16: 1.667ns L1: 133Mhz, CL3 20: 2.0ns 25: 2.5ns 33: 3.3ns 12: 12ns 1L: 10ns, PC100 40: 4ns 50: 5ns 56: 5.6ns 67: 6.7ns 74: 7.4ns 40: 4.0ns 2A: 2.86ns - GDDR4 SDRAM 15: 1.5ns(667MHz) 12: 1.25ns 15: 1.5ns(667MHz) 18: 1.818ns 22: 2.2ns 30: 3.0ns 36: 3.6ns 1A: 1.0ns

XDR DRAM

A2: 2.4Gbps, 36ns, 16Cycles A3: 3.2Gbps, 27ns, 16Cycles B3: 3.2Gbps, 35ns, 20Cycles B4: 4.0Gbps, 28ns, 20Cycles C3: 3.2Gbps, 35ns, 24Cycles C4: 4.0Gbps, 28ns, 24Cycles DS: Daisychain Sample DRAM COMMON 00: NONE 16. Packing Type (16 digit)

90: 9ns DS: Daisychain

T0: 5.5ns BIN V0: 7.5ns BIN G0: 5.6ns BIN 21: 2.1ns(475MHz) 25: 2.5ns 33: 3.3ns 36: 3.6ns 40: 4ns 50: 5ns 60: 6ns 2A: 2.86ns(350MHz) 2C: 2.66ns(375MHz)
Common to all products, except of Mask ROM Divided into TAPE & REEL(In Mask ROM, divided into TRAY, AMMO Packing Separately) Type Packing Type New Marking T 0 (Number) S Y A P M
- DDR SGRAM (tCC: Default CL3) Component TAPE & REEL Other (Tray, Tube, Jar) Stack Component TRAY (Mask ROM) AMMO PACKING Module MODULE TAPE & REEL MODULE Other Packing

Component TAPE & REEL Other (Tray, Tube, Jar) Stack Component TRAY (Mask ROM) AMMO PACKING Module MODULE TAPE & REEL MODULE Other Packing

Asynchronous SRAM

UtRAM (High Density & Low Power)
Density 32Mbit Part Number K1S321611C K1S32161CD K1S32161BCD K1S32161CD Organization 2Mx16 2Mx16 2Mx16 2Mx16 Vcc (V) 1.Speed (ns) Operating Temp I I I E Operating Current (mA) Standby Current (uA) Package 48-FBGA 48-FBGA 48-FBGA 48-TBGA Production Status Mass Production Mass Production Mass Production Mass Production
HIGH-SPEED (4Mbit) ASYNCHRONOUS FAST SRAM
Density 4Mbit Part Number K6R4016C1D K6R4016V1D K6R4008C1D K6R4008V1D Organization 256Kx16 256Kx16 512Kx8 512Kx8 Vcc (V) 5 3.3.3 Speed (ns) Operating Temp I I I I Operating Current (mA) 65, 55 80, 65 65, 55 80, 65 Standby Current (uA) 20, 5 20, 5(1.2) 20, 5 20, 5 Package 44SOJ, 44TSOP2, 48TBGA 44SOJ, 44TSOP2, 48TBGA 36 SOJ, 44 TSOPSOJ, 44 TSOP2 Production Status Mass Production Mass Production Mass Production Mass Production
NOTE: Ordering Information: http://www.samsung.com/Products/Semiconductor/Support/Label_CodeInfo/Async_SRAM.pdf
Asynchronous SRAM Ordering Information
ASYNCHRONOUS SRAM ORDERING INFORMATION
K 1 1. Memory (K) 2. Async SRAM: 6 3. Small Classification E: Corner Vcc/Vss + Fast SRAM F: fCMOS Cell + LPSRAM H: High Speed(LPSRAM) X: High Voltage(LPSRAM) J: BICMOS L: Poly Load Cell + LPSRAM R: Center Vcc/Vss + Fast SRAM T: TFT Cell + LPSRAM 4~5. Density 06: 64K 10: 1M 30: 3M 60: 6M 6~7. Organization 01: x1 16: x16 32: x32 8. Vcc 5: 1.5V Q: VDD 3.0V/VDDQ 1.8V R: 1.65V~2.2V S: 2.5V T: 2.7V~3.6V V: 3.3V W: 2.2V~3.3V 9. Mode 1: CS Low Active 2: CS1, CS2 - Dual Chip Select Signal 3: Single Chip Select with /LB,/UB(tOE) 4: Single Chip Select with /LB,/UB(tCS) 5: Dual Chip Select with /LB,/UB(tOE) 6: Dual Chip Select with /LB,/UB(tCS) 7: I/Os Control with /BYTE 8: CDMA Function 9: Multiplexed Address A: Mirror Chip Option 13. 1st Chip Speed - COMMON (Temp,Power) A: Automotive,Normal B: Commercial,Low Low C: Commercial,Normal D: Extended,Low Low E: Extended,Normal F: Industrial,Low Low I: Industrial,Normal L: Commercial,Low M: Military,Normal N: Extended,Low P: Industrial,Low Q: Automotive,Low R: Industrial,Super Low T: Extended,Super Low U: Commercial,Ultra Super Low 0: NONE,NONE - WAFER, CHIP BIZ Level Division 0: NONE,NONE 1: Hot DC sort 2: Hot DC,selected AC sort 3: Cold/Hot DC,selected AC sort C: 5.0V 04: x4 18: x18 08: x8 24: x24 * Exception - 1MFSRAM B-ver 32-SOJ-300 > S 28-SOJ-300 > S - 512K/1M/2M/4M LPSRAM 32-TSOP1-0813.4F > Y 32-TSOP1-0813.4 > Y 32-TSOP1-0813.4R > N - 4M LPSRAM 32-TSOP2-400F > V 32-TSOP2-400R > M 08: 256K 16: 16M 32: 32M 64: 64M 09: 512K 20: 2M 40: 4M 80: 8M X 3 X 4 X 5 X 6 X 7 X 8 X 9 X X 12 X 13 X 14 X 15 X 16 X 17 X 18 10. Generation M: 1st Generation A: 2nd Generation C: 4th Generation E: 6th Generation G: 8th Generation 11. " ----" 12. Package A: TBGA(LF) C: CHIP BIZ E: TBGA G: SOP J: SOJ L: TSOP1-0813.4F(LF) P: TSOP1-0820F(LF) Q: TSOP2-400R(LF) T: TSOP W: WAFER B: SOP(LF) D: DIP F: FBGA H: BGA K: SOJ(LF) B: 3rd Generation D: 5th Generation F: 7th Generation H: 9th Generation 14~15. Speed (tAA) - fCMOS Cell + LPSRAM & Poly Load Cell + LPSRAM & TFT Cell + LPSRAM 10: 100ns 12: 120ns 15: 150ns 25: 25ns(only fCMOS Cell) 30: 300ns 35: 35ns(except Poly Load Cell) 45: 45ns(except fCMOS Cell) 55: 55ns 60: 60ns(only fCMOS Cell) 70: 70ns 85: 85ns 90: 90ns(only fCMOS Cell) DS: Daisychain Sample - High Speed (LPSRAM) 20: 20ns 25: 25ns - High Voltage (LPSRAM) 55: 55ns 70: 70ns 85: 85ns - Corner Vcc/Vss + Fast SRAM 10: 10ns 12: 12ns 13: 13ns 15: 15ns 17: 17ns 20: 20ns 25: 25ns 30: 30ns 35: 35ns 45 :45ns - BICMOS & Center Vcc/Vss + Fast SRAM 06: 6ns 08: 8ns 09: 9ns 10: 10ns 12: 12ns 13: 13ns 15: 15ns 17: 17ns 20: 20ns 25: 25ns 30: 30ns(only Center Vcc/Vss + Fast SRAM) 35: 35ns(only Center Vcc/Vss + Fast SRAM) 7A: 7.2ns(only BICMOS) 8A: 8.6ns(only BICMOS) DS: Daisychain Sample - Async SRAM COMMON 00: NONE (Containing Wafer, CHIP BIZ, Exception code) 16. Packing Type (16 digit) - Common to all products, except of Mask ROM - Divided into TAPE & REEL(In Mask ROM, divided into TRAY, AMMO Packing Separately) Type Packing Type New Marking T 0 (Number) S Y A P M

NtRAM (4Mbit) SRAM

Part Number K7N403609B K7N401809B
Organization 128Kx36 256Kx18

Operating Mode SPB SPB

Vdd (V) 3.3 3.3
Access Time tCD(ns) 3.0 3.0

Speed tCYC (MHz) 200 200

I/O Voltage (V) 3.3,2.5 3.3,2.5

Package 100TQFP 100TQFP

Status Not for new designs Not for new designs
LATE-WRITE R-R (32Mbit) SRAM
Part Number K7P321874C K7P323674C Organization 2Mx18 1Mx36 Operating Mode SP SP Access Time Vdd (V) tCD(ns) 1.8 / 2.5V 1.6, 2.0 1.8 / 2.5V 1.6, 2.0 Speed tCYC (MHz) 300,250 300,250 I/O Voltage (V) 1.5 (Max 1.8) 1.5 (Max 1.8) Package 119BGA 119BGA Status C/S C/S
LATE-WRITE R-R (16Mbit) SRAM
Part Number K7P161874C K7P163674C Organization 1Mx18 512Kx36 Operating Mode SP SP Vdd (V) 2.5 2.5 Access Time tCD(ns) 2 1.6 Speed tCYC (MHz) I/O Voltage (V) 1.5 (Max 1.9) 1.5 (Max.1.9) Package 119BGA 119BGA Status C/S C/S
LATE-WRITE R-R (8Mbit) SRAM
Part Number K7P801811B K7P803611B K7P801866B K7P803666B Organization 512Kx18 256Kx36 512Kx18 256Kx36 Operating Mode SP SP SP SP Vdd (V) 3.3 3.3 2.5 2.5 Access Time tCD(ns) 1.6 1.6 2.0 2.0 Speed tCYC (MHz) I/O Voltage (V) 1.5 (Max.2.0) 1.5 (Max.2.0) 1.5 (Max.2.0) 1.5 (Max.2.0) Package 119BGA 119BGA 119BGA 119BGA Status Not for new designs Not for new designs Not for new designs Not for new designs
LATE-WRITE R-R & R-L (4Mbit) SRAM
Part Number K7P401822B K7P401823B K7P403622B Organization 256Kx18 256Kx18 128Kx36 Operating Mode SP SP SP Vdd (V) 3.3 3.3 3.3 Access Time tCD(ns) 2.5,2.7,3.0 6.5 2.5,2.7,3.0 Speed tCYC (MHz) 250,200,250,200,167 I/O Voltage (V) 2.5/3.3 2.5/3.3 2.5/3.3 Package 119BGA 119BGA 119BGA Status Not for new designs Not for new designs Not for new designs

DDR (8Mbit) SRAM

Part Number K7D803671B K7D801871B Organization 256Kx36 512Kx18 Vdd (V) 2.5 2.5 Access Time tCD (ns) 1.7/1.9/2.1 1.7/1.9/2.1 Cycle Time (MHz) 333, 330, 250 333, 330, 250 I/O Voltage (V) 1.5(Max 2.0) 1.5(Max 2.0) Package 153BGA 153BGA Status Not for new designs Not for new designs

DDR (16Mbit) SRAM

Part Number K7D161874B K7D163674B Organization 1Mx18 512Kx36 Vdd (V) 1.8~2.5 1.8~2.5 Access Time tCD (ns) 2.3 2.3 Cycle Time (MHz) 330, 300 330, 300 I/O Voltage (V) 1.5~1.9 1.5~1.9 Package 153BGA 153BGA Status

DDR (32Mbit) SRAM

Part Number K7D321874A K7D323674A K7D321874C K7D323674C Organization 2Mx18 1Mx36 2Mx18 1Mx36 Vdd (V) 1.8~2.5 1.8~2.5 1.8~2.5 1.8~2.5 Access Time tCD (ns) 2.0 2.0 2.0 2.0 Cycle Time (MHz) 400, 375, 333 400, 375, 333 400, 375, 333 400, 375, 333 I/O Voltage (V) 1.5~1.8 1.5~1.8 1.5~1.8 1.5~1.8 Package 153BGA 153BGA 153BGA 153BGA Status EOL in June`07 EOL in June`07
DDR II CIO/SIO (18Mbit) SRAM
Part Number K7I161882B K7I161884B K7J161882B K7J163682B K7I163682B K7I163684B

NOTES: 2B = Burst of 2

Organization 1Mx18 1Mx18 1Mx18 512Kx36 512Kx36 512Kx36
Vdd (V) 1.8 1.8 1.8 1.8 1.8 1.8
Access Time tCD (ns) 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50

4B = Burst of 4

Cycle Time (MHz) 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167
I/O Voltage (V) 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8
Package 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA
Comments CIO-2B CIO-4B SIO-2B SIO-2B CIO-2B CIO-4B

SIO = Separate I/O

CIO = Common I/O
DDR II CIO/SIO (36Mbit) SRAM
Part Number K7I321882C K7I321884C K7J321882C K7I323682C K7I323684C K7J323682C
Organization 2Mx18 2Mx18 2Mx18 1Mx36 1Mx36 1Mx36
Access Time tCD (ns) 0.45 0.45 0.45 0.45 0.45 0.45
Cycle Time (MHz) 333,300,250 333,300,250 333,300,250 333,300,250 333,300,250 333,300,250
Production Package 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA
Comments CIO-2B CIO-4B SIO-2B CIO-2B CIO-4B SIO-2B
2B = Burst of 2 4B = Burst of 4 SIO = Separate I/O CIO = Common I/O C-die will support high-speed bins only 330, 300, 250MHz, which can cover slow-speed bins (200MHz, 167MHz) using stable DLL circuit.
DDR II CIO/SIO (72Mbit) SRAM
Part Number K7I641882M K7I641884M K7J641882M K7I643682M K7I643684M K7J643682M
Organization 4Mx18 4Mx18 4Mx18 2Mx36 2Mx36 2Mx36
Access Time Vdd (V) 1.8 1.8 1.8 1.8 1.8 1.8
Cycle Time tCD (ns) 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50
I/O (MHz) 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167
Voltage (V) 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8

2B = Burst of 2

DDR II+ CIO (18Mbit) SRAM
Part Number K7K1618T2C K7K1636T2C
Organization 1Mx18 512Kx36

Vdd (V) 1.8 1.8

Access Time tCD (ns) 0.45 0.45
Cycle Time (MHz) 450, 400, 333 450, 400, 333

I/O Voltage (V) 1.5 1.5

Package 165FBGA 165FBGA
Comments DDRII + CIO-2B DDRII + CIO-2B
Offer 2-clock latency now; we can also support 2.5-clock latency with 500MHz speed based on demand.
DDR II+ CIO (36Mbit) SRAM
Part Number K7K3218T2C K7K3236T2C

Organization 2Mx18 1Mx36

Production Package 165FBGA 165FBGA
Offer 2-clock latency now; we can also support 2.5-clock latency with 450MHz speed based on demand.

QDR I, II (18Mbit) SRAM

Part Number K7R160982B K7R161882B K7R161884B K7Q161862B K7Q161864B K7R163682B K7R163684B K7Q163662B K7Q163664B
Organization 2Mx9 1Mx18 1Mx18 1Mx18 1Mx18 512Kx36 512Kx36 512Kx36 512Kx36
Vdd (V) 1.8 1.8 1.8 1.8v / 2.5v 1.8v / 2.5v 1.8 1.8 1.8v / 2.5v 1.8v / 2.5v
Access Time tCD (ns) 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.45,0.50 2.5 2.5 0.45,0.45,0.50 0.45,0.45,0.45,0.50 2.5 2.5
Cycle Time (MHz) 250,200,167 250,200,167 300,250,200,167 250,200,167 300,250,200,167
I/O Voltage (V) 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8
Package 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA
Comments QDR II - 2B QDR II - 2B QDR II - 4B QDR I - 2B QDR I - 4B QDR II - 2B QDR II - 4B QDR I - 2B QDR I - 4B

QDR II (36Mbit) SRAM

Part Number K7R320982C K7R321882C K7R321884C K7R323682C K7R323684C
Organization 4Mx9 2Mx18 2Mx18 1Mx36 1Mx36
Vdd (V) 1.8 1.8 1.8 1.8 1.8
Access Time tCD (ns) 0.45 0.45 0.45 0.45 0.45
Cycle Time (MHz) 300, 250, 200 300, 250, 200 333, 300, 250 300, 250, 200 333, 300, 250
I/O Voltage (V) 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8
Package 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA
Comments QDR II-2B QDR II-2B QDR II-4B QDR II-2B QDR II-4B
2B = Burst of 2 4B = Burst of 4 C-die will support high-speed bins only 300, 250, 200MHz, which can cover slow-speed bin (167MHz) using stable DLL circuit.

QDR II (72Mbit) SRAM

Part Number K7R640982M K7R641882M K7R641884M K7R643682M K7R643684M
Organization 8Mx9 4Mx18 4Mx18 2Mx36 2Mx36
Access Time tCD (ns) 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.45,0.50

Package 48TSOP (12x20) 67 FBGA 67 FBGA FBGA (7x9) FBGA (7x9) 63 FBGA 63 FBGA FBGA (9.5x12) FBGA (9.5x12) 63 FBGA(10x13) 63 FBGA (11x13) 63 FBGA (10x13)
Temperature Industrial Extended Extended Industrial Industrial Extended Extended Industrial Industrial Extended Extended Extended
For ordering information, refer to page 11.

FLASH: moviNAND

Combining high-density MLC NAND flash with an MMC controller in a single chip that has an MMC interface, moviNAND delivers dense, cost-effective storage for embedded applications. Density 512MB 1GB 2GB 2GB 2GB 4GB 4GB 4GB 8GB
Org x8 x8 x8 x8 x8 x8 x8 x8 x8

All parts are lead free.

Speed (MHz) 52MHz 52MHz 52MHz 52MHz 52MHz 52MHz 52MHz 52MHz 52MHz
Voltage(V) 1.8/3.3 1.8/3.3 1.8/3.3 1.8/3.3 1.8/3.3 1.8/3.3 1.8/3.3 1.8/3.3 1.8/3.3
Part Number KMAIN0000A-S998000 KMAFN0000M-S998000 KMBDN0000M-S998000 KMBDE0000A-S998000 KMAKE0000M-B998000 KMCEN0000M-S998000 KMCEE0000A-S998000 KMBLE0000M-B998000 KMCME0000M-B998000
Package 153FBGA 169FBGA 169FBGA 153FBGA 169FBGA 169FBGA 153FBGA 169FBGA 169FBGA
Package Size 11.5x13x1.3t 12.0x18x1.2t 12.0x18x1.2t 11.5x13x1.3t 12.0x18x1.2t 12.0x18x1.2t 11.5x13x1.3t 12.0x18x1.2t 12.0x18x1.3t

FLASH: FLEX-OneNAND

A monolithic IC with a NAND flash array using a NOR flash interface, Flex-OneNAND enables partitioning into SLC and MLC areas so the chip can be configured for storage or high-speed access. Density 4Gb 8Gb 16Gb

Org x16 x16 x16

Speed (MHz)

Voltage(V)

Part Number

Package DDP DDP QDP

Comments ES ES ES

DRAM: OneDRAM

OneDRAM is a dual-port, low power DRAM with an SRAM buffer interface and is optimal for high-performance, high-density mobile applications. Density 512Mb

Org X16

Speed (MHz) 133MHz

Package

Comments Coming Second Half 2007

Hard Disk Drives

PIO Mode Ultra DMA Mode 2 LightScribe V1.2 Full Labling Time Supported Disks <20min Draft <28min Normal <36min Best DVD+R / DVD+R DL / DVD+RW / DVD-RAM DVD-R / DVD-R DL / DVD-RW / DVD-Video / DVD-ROM CD-R / CD-RW / CD-ROM / CD-ROM/XA CD-Audio / Video-CD / Photo CD CD-I (FMV) / CD-Extra / CD-Text LightScribe DVDR / LightScribe CD-R Other RoHS Compliant Vertical Mount ing Supported 16.6MB/s 33.3MB/s <20min Draft <28min Normal <36min Best DVD+R / DVD+R DL / DVD+RW / DVD-RAM DVD-R / DVD-R DL / DVD-RW / DVD-Video / DVD-ROM CD-R / CD-RW / CD-ROM / CD-ROM/XA CD-Audio / Video-CD / Photo CD CD-I (FMV) / CD-Extra / CD-Text LightScribe DVDR / LightScribe CD-R Both 12cm and 8cm standard round discs supported Operates on either AC Adaptor or USB Power Manual Disc Ejection in case of power loss
Read 12x 8x 8x 12x 8x 12x 8x 16x 48x 40x 40x
Slot-in Slim External DVD Writer SE-T084L External, Slot-in, Slim 143x19x157mm USB 2.0 2MB Up to 4.7GB Single Layer / 8.5GB Double Layer DVD-ROM: 130ms CD-ROM: 130ms Media Type MB/s Write MB/s DVD+R 10.8 8x 10.8 DVD+R DL 8.1 6x 10.8 DVD+RW 10.8 8x 10.8 DVD-R 10.8 8x 10.8 DVD-R DL 5.4 4x 10.8 DVD-RAM 6.75 5x 6.75 DVD-RW 8.1 6x 10.8 DVD-ROM 10.8 CD-ROM 3.6 CD-R 3.6 24x 3.6 CD-RW 3.6 24x 3.6
Read 8x 8x 8x 8x 8x 5x 8x 8x 24x 24x 24x
Burst Transfer Rate (Max)

INTERNAL DVD DRIVES

Drive Type Dimensions (WxHxD) Interface Buffer Memory Disc Capacity (Max) Seek Time (Ave) Data Transfer Rate (Max) Internal DVD-ROM Drives SH-D163A/B SH-D162C Internal Internal 148.2x42x170mm 148.2x42x184mm S-ATA EIDE / ATAPI 198KB 256KB CD-RW Type 80 700MB / CD-R Type 90 800MB Up to 4.7GB Single Layer / 8.5GB Double Layer DVD: 150ms DVD: 150ms CD: 130ms CD: 130ms Media Activity MB/s Read Media Activity MB/s Read Type Type DVD Read 21.6 48x DVD Read 21.6 48x CD Read 7.2 16x CD Read 7.2 16x Internal DVD Writer SH-S182D/M/F Internal 148.2x42x170mm EIDE / ATAPI 2MB Up to 4.7GB Single Layer / 8.5GB Double Layer DVD-ROM: 130ms CD-ROM: 110ms Media MB/sWrite MB/s Read Type DVD+R 24.3 18x 16.2 12x DVD+R DL 10.8 8x 10.8 8x DVD+R DL (SH-S128F) 10.8 10x 10.8 8x DVD+RW 10.8 8x 10.8 8x DVD-R 24.3 18x 16.2 12x DVD-R DL 10.8 8x 10.8 8x DVD-RAM 16.2 12x 16.2 12x DVD-RW 8.1 6x 10.8 8x DVD-ROM 21.6 16x CD-ROM 7.2 48x CD-R 7.2 48x 6.0 40x CD-RW 4.8 32x 6.0 40x

PIO Mode 4 Ultra DMA Mode 2 16.6MB/s 33.3MB/s
Burst Transfer Rate (Max) LightScribe V1.2 Full Labling Time Supported Disks

S-ATA DMA Mode 2

1.5Gb/s 16.6MB/s
PIO Mode 4 Ultra DMA Mode 2

16.6MB/s 33.3MB/s

<20min Draft (SH-S128M only) DVD+R / DVD+RW / DVD-RAM DVD-R / DVD-RW / DVD-Video / DVD-ROM CD-R / CD-RW / CD-DA / CD-ROM / CD-ROM/XA Video-CD / Photo CD / CD-I / CD-Extra / CD-Tex
<28min Normal (SH-S128M only) DVD+R / DVD+RW / DVD-RAM DVD-R / DVD-RW / DVD-Video / DVD-ROM CD-R / CD-RW / CD-DA / CD-ROM / CD-ROM/XA Video-CD / Photo CD / CD-I / CD-Extra / CD-Tex
<36min Best (SH-S128M only) DVD+R / DVD+R DL / DVD+RW / DVD-RAM DVD-R / DVD-R DL / DVD-RW / DVD-Video / DVD-ROM CD-R / CD-RW / CD-ROM / CD-ROM/XA CD-Audio / Video-CD / Photo CD CD-I (FMV) / CD-Extra / CD-Text LightScribe DVDR / LightScribe CD-R (SH-S128M only)
RoHS Compliant Horizontal or Vertical Drive Mounting Supported Motorized Tray MPEG II Card and Soft MPEG Compatible
RoHS Compliant Buffer Under Run Free
Drive Type Dimensions (WxHxD) Interface Buffer Memory Disc Capacity (Max) Seek Time (Ave) Data Transfer Rate (Max) 20x DVD Writer SH-S202G Internal 148.2x42x170mm EIDE / ATAPI 2MB Up to 4.7GB Single Layer / 8.5GB Double Layer DVD-ROM: 130ms CD-ROM: 110ms Media MB/s Write MB/s Read Type DVD+R 27.0 20x 21.6 16x DVD+R DL 16.2 12x 16.2 12x DVD+RW 10.8 8x 16.2 12x DVD-R 27.0 20x 21.6 16x DVD-R DL 16.2 12x 16.2 12x DVD-RAM 16.2 12x 16.2 12x DVD-RW 8.1 6x 16.2 12x DVD-ROM 21.6 12x CD-ROM 7.2 48x CD-R 7.2 48x 6.0 40x CD-RW 4.8 32x 6.0 40x
PIO Mode Ultra DMA Mode 2 LightScribe V1.2 Full Labling Time 16.6MB/s 33.3MB/s <20min Draft (SH-S183L only) <28min Normal (SH-S183L only) <36min Best (SH-S183L only) Supported Disks DVD+R / DVD+R DL / DVD+RW / DVD-RAM DVD-R / DVD-R DL / DVD-RW / DVD-Video / DVD-ROM CD-R / CD-RW / CD-ROM / CD-ROM/XA CD-Audio / Video-CD / Photo CD CD-I (FMV) / CD-Extra / CD-Text Other RoHS Compliant Buffer Under Run Free DVD+R / DVD+R DL / DVD+RW / DVD-RAM DVD-R / DVD-R DL / DVD-RW / DVD-Video / DVD-ROM CD-R / CD-RW / CD-ROM / CD-ROM/XA CD-Audio / Video-CD / Photo CD CD-I (FMV) / CD-Extra / CD-Text LightScribe DVDR / LightScribe CD-R (SH-S183L only) RoHS Compliant Buffer Under Run Free Motorized Tray Supports Mt. Rainier RoHS Compliant Buffer Under Run Free DVD+R / DVD+R DL / DVD+RW / DVD-RAM DVD-R / DVD-R DL / DVD-RW / DVD-Video / DVD-ROM CD-R / CD-RW / CD-ROM / CD-ROM/XA CD-Audio / Video-CD / Photo CD CD-I (FMV) / CD-Extra / CD-Text

DVD-R / DVD-R DL / DVD-RW / DVD-Video / DVD-ROM DVD-R / DVD-R DL / DVD-RW / DVD-Video / DVD-ROM
LightScribe DVDR / LightScribe CD-R (SM-T082L only) LightScribe DVDR / LightScribe CD-R

INTERNAL COMBO DRIVES

Drive Type Dimensions (WxHxD) Interface Buffer Memory Disc Capacity (Max) Seek Time (Ave) Data Transfer Rate (Max) Internal Combo Slim Drive SN-M242D Internal 128x12.7x129mm EIDE / ATAPI 2MB CD-RW Type 80 700MB / CD-R Type 90 800MB DVD: 120ms CD: 130ms Media Type Activity MB/s Read CD CD CD DVD
Burst Transfer Rate (Max) PIO Mode 4 DMA Mode 2 Ultra DMA Mode 2 Supported Disks
Internal Combo Drives SH-M523A/B SH-M522C Internal Internal 148.2x42x170mm 148.2x42x184mm S-ATA EIDE / ATAPI 2MB 2MB CD-RW Type 80 700MB / CD-R Type 90 800MB Up to 4.7GB Single Layer / 8.5GB Double Layer DVD: 150ms DVD: 150ms CD: 130ms CD: 130ms Media Type Activity MB/s Read Media Type Activity MB/s Read CD CD CD DVD

Record Rewrite Read Read

3.6 3.6 3.6 10.8

24x 24x 24x 8x

1.5Gb/s

7.8 4.8 7.8 21.6

52x 32x 52x 16x

CD CD CD DVD

PIO Mode 4 DMA Mode 2 Ultra DMA Mode 2
16.6MB/s 16.6MB/s 33.3MB/s
DVD+R / DVD+RW / DVD-RAM DVD-R / DVD-RW / DVD-Video / DVD-ROM CD-R / CD-RW / CD-DA / CD-ROM / CD-ROM/XA CD-Audio / Video-CD / Photo CD CD-I / CD-Extra / CD-Text
DVD+R / DVD+RW / DVD-RAM DVD-R / DVD-RW / DVD-Video / DVD-ROM CD-R / CD-RW / CD-DA / CD-ROM / CD-ROM/XA CD-Audio / Video-CD / Photo CD CD-I / CD-Extra / CD-Text RoHS Compliant Horizontal or Vertical Drive Mounting Supported Motorized Tray Buffer Under Run Free Supports Mt. Rainier
RoHS Compliant Horizontal or Vertical Drive Mounting Supported Drawer Type Tray Buffer Under Run Free

INTERNAL CD DRIVES

Drive Type Dimensions (WxHxD) Interface Buffer Memory Disc Capacity (Max) Seek Time (Ave) Data Transfer Rate (Max)
Internal CD-ROM Drives SH-C523A SH-C522C Internal Internal 148.2x42x184mm 148.2x42x184mm S-ATA EIDE / ATAPI 96KB 96KB CD-RW Type 80 700MB / CD-R Type 90 800MB Up to 4.7GB Single Layer / 8.5GB Double Layer CD: 90ms CD: 90ms Media Type Activity MB/s Read Media Type Activity MB/s Read CD Read 7.8 52x CD Read 7.8 52x
S-ATA 1.5Gb/s PIO Mode 4 DMA Mode 2 16.6MB/s 16.6MB/s
CD-ROM Slim Drive SN-C242C Internal 128x12.7x129mm EIDE / ATAPI 96KB CD-RW Type 80 700MB / CD-R Type 90 800MB CD: 130ms Media Type Activity MB/s Read CD Read 3.6 24x