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Samsung HD160JJ-B

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Comments to date: 5. Page 1 of 1. Average Rating:
wildthing423 5:19pm on Wednesday, October 13th, 2010 
With the necessary "hard drive" pun out of the way: Fast transfer speeds, quiet, great when it works Unreliable, had to be replaced
diogobaeder 5:30pm on Tuesday, September 7th, 2010 
I was impressed by the size, spec, and price on the CLX-3160FN, so I went ahead and ordered one. I never even got to use it, however.
wadesmart 2:48pm on Sunday, August 29th, 2010 
Samsung Hard Disk I was very Happy with this product, It arrived on-time and worked first time round.
cwroblew 7:09pm on Sunday, August 8th, 2010 
Bottom line: Not perfect but superior than any other HP or Cannon in this price range. Very quick start and response. Good quality. Do yourself a favor and buy something like HP or Brother - something that you know will work out of the box. Samsung makes ok printers.
dongling 7:55pm on Sunday, May 2nd, 2010 
Still going strong Samsung still going strong despite constant use and reformatting - no error segments A+ product

Comments posted on www.ps2netdrivers.net are solely the views and opinions of the people posting them and do not necessarily reflect the views or opinions of us.

 

Documents

doc0

Samsung Semiconductor, Inc.

Product Selection Guide

Memory and Storage January 2009
Samsung offers the industrys broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, ash and SRAM products are found in computersfrom ultra-mobile portables to powerful servers and in a wide range of handheld devices such as smartphones and MP3 players. Samsung also delivers the industrys widest line of storage products. These inlcude optical and hard disk drives as well as ash storage, such as the all-ash Solid State Drive and a range of embedded and removable ash storage products.
SAMSUNG PRODUCT OFFERINGS

Markets

Mobile/Wireless

TFT/LCD

ODD/HDD

Notebook PCs

Desktop PCs/Workstations
Servers Networking/ Communications Consumer Electronics

www.samsung.com/semi/us

www.samsung.com/semi/dram

Pages 4-14 D RAM

www.samsung.com/semi/flash

Pages 15-19 FLASH

www.samsung.com/semi/sram

Pages 20 -25 SRAM

MULTI-CHIP PACKAGE

www.samsung.com/semi/mcp

Pages 26-27

FUSION MEMORY

FUSION MEMORY www.samsung.com/semi/fusion
Page 28 F U S I ON Pages 29-33 ST OR A GE
Optical Disk Drives www.samsungodd.com

STORAGE

HaManufacturers repsr Solid State Drives www.samsungssd.com Optical Disk Drives www.samsungodd.com Hard Disk Drives www.samsung.com/hdd
DDR3 SDRAM REGISTERED MODULES
Density 1GB 2GB 2GB 4GB 4GB 8GB 1GB 2GB 2GB 4GB 4GB 8GB 8GB 16GB 1GB 2GB 1GB 1GB 2GB 4GB

NOTES:

Organization 128Mx72 256Mx72 256Mx72 512Mx72 512Mx72 1Gx72 128Mx72 256Mx72 256Mx72 512Mx72 512Mx72 1Gx72 1Gx72 2Gx72 128Mx64 256Mx64 128Mx64 128Mx64 256Mx64 512Mx64
F7= DDR3-800 (6-6-6) F8 = DDR3-1066 (7-7-7) H9 = DDR3-1333 (9-9-9) Voltage = 1.5V
Part Number M393B2873DZ1-C(F7/F8/H9) M393B5673DZ1-C(F7/F8/H9) M393B5670DZ1-C(F7/F8/H9) M393B5173DZ1-C(F7/F8) M393B5170DZ1-C(F7/F8/H9) M393B1G70DJ1-C(F7/F8) M393B2873EH1-C(F7/F8/H9) M393B5673EH1-C(F7/F8/H9) M393B5670EH1-C(F7/F8/H9) M393B5173EH1-C(F7/F8) M393B5170EH1-C(F7/F8/H9) M393B1G70EM1-C(F7/F8) M393B1K70BH1-C(F7/F8/H9) M393B2K70BM1-C(F7/F8) M471B2874DZ1-C(F7/F8/H9) M471B5673DZ1-C(F7/F8/H9) M471B2873EH1-C(F8/H9) M471B2874EH1-C(F8/H9) M471B5673EH1-C(F8/H9) M471B5273BH1-C(F8/H9)
Composition 1Gb (128M x8)*9 1Gb (128M x8)*18 1Gb (256M x4)*18 1Gb (128M x8)*36 1Gb (256M x4)*36 2Gb (512M x4)*36 1Gb (128M x8)*9 1Gb (128M x8)*18 1Gb (256M x8)*18 1Gb (128M x8)*36 1Gb (256M x4)*36 2Gb (512M x4)*36 2Gb (512M x4)*36 4Gb (1024M x4)*36 1Gb (64M x16)*8 1Gb (128M x8)*16 1Gb (128M x8)*8 1Gb (64M x16)*8 1Gb (128M x8)*16 2Gb (256M x8)*16
Compliance RoHS RoHS RoHS RoHS RoHS RoHS RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free RoHS RoHS RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free
Speed (Mbps) 800/1066/1333 800/1066/1333 800/1066/1333 800/1066 800/1066/1333 800/1066 800/1066/1333 800/1066/1333 800/1066/1333 800/1066 800/1066/1333 800/1066 800/1066/1333 800/1066 800/1066/1333 800/1066/1333 1066/1333 1066/1333 1066/1333 1066/1333

Compliance Lead free Lead free Lead free Lead free Lead free & Halogen free Lead free Lead free & Halogen free Lead free
Speed (Mbps) 667/800 667/800 667/800 667/800 667/800 667/800 667/800 667/800

Rank 2 2

Production Now Now Now Now Now Now Now Now

256Mx64 512Mx64

M378T5663QZ3-C(E6/F7/E7) M378T5663EH3-C(E6/F7/E7) M378T5263AZ3-C(E6/F7)
E6=PC2-5300 (DDR2-667 @ CL=5) E7=PC2-6400 (DDR2-800 @ CL=5) F7=PC2-6400 (DDR2-800 @ CL=6)
DDR2 SDRAM UNBUFFERED MODULES (ECC)
Module Density 512MB 1GB Organization 64Mx72 128Mx72 Part Number M391T6553GZ3-C(E6/F7/E7) M391T2863QZ3-C(E6/F7/E7) M391T2863EH3-C(E6/F7/E7) M391T5663QZ3-C(E6/F7/E7) M391T5663EH3-C(E6/F7/E7) M391T5263AZ3-C(E6/F7) Composition (64M x8)*9 (128M x8)*9 (128M x8)*9 (128M x8)*18 (128M x8)*18 (256M x8)*18
Compliance Lead free Lead free Lead free & Halogen free Lead free Lead free & Halogen free Lead free
Speed (Mbps) 667/800 667/800 667/800 667/800 667/800 667/800
Production Now Now Jan '09 Now Jan '09 Now

2GB 4GB

DDR2 SDRAM SODIMM MODULES
Module Density 512MB Organization 64Mx64 Part Number M470T6554GZ3-C(E6/F7/E7) M470T6464QZ3-C(E6/F7/E7) M470T2953GZ3-C(E6/F7/E7) 1GB 128Mx64 M470T2864QZ3-C(E6/F7/E7) M470T2864EH3-C(E6/F7/E7) 2GB 4GB
Composition (32M x16)*8 (64M x16)*4 (64M x8)*16 (64M x16)*8 (64M x16)*8 (128M x8)*8 (128M x8)*8 st.(512M x8)*8
M470T5663QZ3-C(E6/F7/E7) M470T5663EH3-C(E6/F7/E7) M470T5267AZ3-C(E6/F7)

Module

DDR2 SDRAM COMPONENTS
Density 256Mb Organization 16Mx16 128M x4 512Mb 64M x8 32M x16 256M x4 Part Number K4T56163QI-ZC(E6/F7/E7) K4T51043QG-HC(E6/F7/E7) K4T51083QG-HC(E6/F7/E7) K4T51163QG-HC(E6/F7/E7/F8) K4T1G044QQ-HC(E6/F7/E7) K4T1G044QE-HC(E6/F7/E7) K4T1G084QQ-HC(E6/F7/E7) K4T1G084QE-HC(E6/F7/E7) K4T1G164QQ-HC(E6/F7/E7) K4T1G164QE-HC(E6/F7/E7/F8) K4T2G044QA-HC(E6/F7/E7) K4T2G084QA-HC(E6/F7/E7) # Pins-Package 84-FBGA 60-FBGA 60-FBGA 84-FBGA 68-FBGA 68-FBGA 68-FBGA 68-FBGA 84-FBGA 84-FBGA 68-FBGA 68-FBGA Dimensions 9x13mm 10x11mm 10x11mm 11x13mm 11x18mm 11x18mm 11x18mm 11x18mm 11x18mm 11x18mm 11x18mm 11x18mm

Voltage = 1.8V

Package Lead free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free

F : 60-FBGA(LF) H : ISM (10X10mm,1-side) K : 72-FBGA(LF) L : 60-FBGA
M : POP-SAC105(LF,DDP) Q : ISM S : POP(DDP) X : POP(LF,DDP,HF)
(Halogen Free: 128Mb:14th, 256Mb:13th, 512Mb:8th,1Gb:5th generation)

# Pins-Package

Refresh
COMPONENT DRAM ORDERING INFORMATION
SAMSUNG Memory DRAM DRAM Type Density Bit Organization
Speed Temp & Power Package Type Revision Interface (VDD, VDDQ) Number of Internal Banks
1. Memory (K) 2. DRAM: 4 3. DRAM Type
B: DDR3 SDRAM D: GDDR SDRAM G: GDDR5 SDRAM H: DDR SDRAM J: GDDR3 SDRAM M: Mobile SDRAM N: gDDR2 SDRAM S: SDRAM T: DDR SDRAM U: GDDR4 SDRAM V: Mobile DDR SDRAM Power Efficient Address W: gDDR3 SDRAM X: Mobile DDR SDRAM Y: XDR DRAM Z: Value Added DRAM
08: x8 15: x16 (2CS) 16: x16 26: x4 Stack (JEDEC Standard) 27: x8 Stack (JEDEC Standard) 30: x32 (2CS, 2CKE) 31: x32 (2CS) 32: x32

9. Package Type

DDR SDRAM L: TSOP II (Lead-free & Halogen-free) H: FBGA (Lead-free & Halogen-free) F: FBGA for 64Mb DDR (Lead-free & Halogenfree) 6: sTSOP II (Lead-free & Halogen-free) T: TSOP II N: sTSOP II G: FBGA U: TSOP II (Lead-free) V: sTSOP II (Lead-free) Z: FBGA (Lead-free) DDR2 SDRAM Z: FBGA (Lead-free) J: FBGA DDP (Lead-free) Q: FBGA QDP (Lead-free) H: FBGA (Lead-free & Halogen-free) M: FBGA DDP (Lead-free & Halogen-free) E: FBGA QDP (Lead-free & Halogen-free) T: FBGA DSP (Lead-free & Halogen-free, Thin) DDR3 SDRAM Z: FBGA (Lead-free) H: FBGA (Halogen-free & Lead-free) Graphics Memory Q: TQFP U: TQFP (Lead Free) G: 84/144 FBGA V: 144 FBGA (Lead Free) Z: 84 FBGA(Lead Free) T: TSOP L: TSOP (Lead Free) A: 136 FBGA B: 136 FBGA(Lead Free) H: FBGA(Hologen Free & Lead Free) E: 100 FBGA(Hologen Free & Lead Free) SDRAM L TSOP II (Lead-free & Halogen-free) N: STSOP II T: TSOP II U: TSOP II (Lead-free) V: sTSOP II (Lead-free)

6. # of Internal Banks

2: 2 Banks 3: 4 Banks 4: 8 Banks 5: 16 Banks
7. Interface ( VDD, VDDQ)
2: LVTTL, 3.3V, 3.3V 4: LVTTL, 2.5V, 2.5V 5: SSTL-2 1.8V, 1.8V 6: SSTL-15 1.5V, 1.5V 8: SSTL-2, 2.5V, 2.5V A: SSTL, 2.5V, 1.8V F: POD-15 (1.5V,1.5V) H: SSTL_2 DLL, 3.3V, 2.5V M: LVTTL, 1.8V, 1.5V N: LVTTL, 1.5V, 1.5V P: LVTTL, 1.8V, 1.8V Q: SSTL-2 1.8V, 1.8V R: SSTL-2, 2.8V, 2.8V U: DRSL, 1.8V, 1.2V

4. Density

10: 1G, 8K/32ms 16: 16M, 4K/64ms 26: 128M, 4K/32ms 28: 128M, 4K/64ms 32: 32M, 2K/32ms 50: 512M, 32K/16ms 51: 512M, 8K/64ms 52: 512M, 8K/32ms 54: 256M, 16K/16ms 55: 256M, 4K/32ms 56: 256M, 8K/64ms 62: 64M, 2K/16ms 64: 64M, 4K/64ms 68: 768M, 8K/64ms 1G: 1G, 8K/64ms 2G: 2G, 8K/64ms 4G: 4G, 8K/64ms

8. Revision

A: 2nd Generation B: 3rd Generation C: 4th Generation D: 5th Generation E: 6th Generation F: 7th Generation G: 8th Generation H: 9th Generation I: 10th Generation J: 11th Generation K: 12th Generation M: 1st Generation N: 14th Generation Q: 17th Generation

5. Bit Organization

02: x2 04: x4 06: x4 Stack (Flexframe) 07: x8 Stack (Flexframe)
XDR DRAM J: BOC(LF) P: BOC Mobile DRAM Leaded / Lead Free G/A: 52balls FBGA Mono R/B: 54balls FBGA Mono X /Z: 54balls BOC Mono J /V: 60(72)balls FBGA Mono 0.5pitch L /F: 60balls FBGA Mono 0.8pitch S/D: 90balls FBGA Monolithic (11mm x 13mm) F/H: Smaller 90balls FBGA Mono Y/P: 54balls CSP DDP M/E: 90balls FBGA DDP
DDR2 SDRAM CC: DDR2-400 (200MHz @ CL=3, tRCD=3, tRP=3) D5: DDR2-533 (266MHz @ CL=4, tRCD=4, tRP=4) E6: DDR2-667 (333MHz @ CL=5, tRCD=5, tRP=5) F7: DDR2-800 (400MHz @ CL=6, tRCD=6, tRP=6) E7: DDR2-800 (400MHz @ CL=5, tRCD=5, tRP=5) DDR3 SDRAM F7: DDR3-800 (400MHz @ CL=6, tRCD=6, tRP=6) F8: DDR3-1066 (533MHz @ CL=7, tRCD=7, tRP=7) G8: DDR3-1066 (533MHz @ CL=8, tRCD=8, tRP=8) H9: DDR3-1333 (667MHz @ CL=9, tRCD=9, tRP=9) K0: DDR3-1600 (800MHz @ CL=11, tRCD=11, tRP=11) Graphics Memory 18: 1.8ns (550MHz) 04: 0.4ns (2500MHz) 20: 2.0ns (500MHz) 05: 0.5ns (2000MHz) 22: 2.2ns (450MHz) 5C: 0.56ns (1800MHz) 25: 2.5ns (400MHz) 06: 0.62ns (1600MHz) 2C: 2.66ns (375MHz) 6A: 0.66ns (1500MHz) 2A: 2.86ns (350MHz) 07: 0.71ns (1400MHz) 33: 3.3ns (300MHz) 7A: 0.77ns (1300MHz) 36: 3.6ns (275MHz) 08: 0.8ns (1200MHz) 40: 4.0ns (250MHz) 09: 0.9ns (1100MHz) 45: 4.5ns (222MHz) 1 : 1.0ns (1000MHz) 50/5A: 5.0ns (200MHz)
1 : 1.1ns (900MHz) 55: 5.5ns (183MHz) 12: 1.25ns (800MHz) 60: 6.0ns (166MHz) 14: 1.4ns (700MHz) 16: 1.6ns (600MHz) SDRAM (Default CL=3) 50: 5.0ns (200MHz CL=3) 60: 6.0ns (166MHz CL=3) 67: 6.7ns 75: 7.5ns PC133 (133MHz CL=3) XDR DRAM A2: 2.4Gbps, 36ns, 16Cycles B3: 3.2Gbps, 35ns, 20Cycles C3: 3.2Gbps, 35ns, 24Cycles C4: 4.0Gbps, 28ns, 24Cycles DS: Daisychain Sample Mobile-SDRAM 60: 166MHz, CL 3 75: 133MHz, CL 3 80: 125MHz, CL 3 1H: 105MHz, CL 2 1L: 105MHz, CL 3 15: 66MHz, CL 2 & 3 Mobile-DDR C3: 133MHz, CL 3 C2: 100MHz, CL 3 C0: 66MHz, CL 3
Note: All of Lead-free or Halogen-free product are in compliance with RoHS

Please contact your local Samsung sales representative for latest product offerings.
Note: All parts are lead free
Solid State Drives (SSD)*
Application Interface Size 1.8" SATA II SLC 3.0Gb/sec Connector Thin uSATA Den. 32GB 64GB 32GB 64GB 32GB 64GB 64GB 128GB 64GB 128GB 64GB 128GB 64GB 2.5" PM800 SLIM (caseless) SS410 SATA II 3.0Gb/sec SLC 2.5" uSATA Thin SATA 128GB 256GB 64GB 128GB 25GB 50GB 50GB 64GB 50GB 100GB 8GB UMPC/Low-Cost PC SATA II MLC UM410 HALF SLIM Thin SATA 16GB 32GB
*Please contact Marketing for the latest offerings.

Comp. 8Gb

Part Number MCBQE32G8MPP-0VA00 MCCOE64G8MPP-0VA00 MCBQE32G5MPP-0VA00 MCCOE64G5MPP-0VA00 MCBQE32GFMPP-MVA00 MCBQE64GFMPP-MVA00 MMCRE64G8MPP-0VA00 MMCQE28G8MUP-0VA00 MMCRE64G5MPP-0VA00 MMDOE28G5MPP-0VA00
2.5" SLIM (caseless) 1.8"

Thin SATA

Thin uSATA

16Gb 16Gb

PC/Notebook
2.5" SLIM (caseless)

SATA II MLC 3.0Gb/sec

MMCRE64GFMPP-MVA00 MMCQE28GFMPP-MVA00 MMCRE64G5MXP-0VB00
MMCRE28G5MXP-0VB00 MMDOE56G5MXP-0VB00
MMCRE64GFMXP-MVB00 MMCRE28GFMXP-MVB00 MCBQE25G5MPQ-0VA03 MCCOE50G5MPQ-0VA03 MCBQE32G5MPQ-0VA03 MCCOE64G5MPQ-0VA03 MCBQE50G5MXP-0VB03 MCCOE00G5MXP-0VB03 MMAGE08GSMPP-MVA00

Server/Storage

2.5"
MMBRE16GSMPP-MVA00 MMCRE32GSMPP-MVA00
SD and MicroSD FLASH CARDS
Flash Cards Type Density 1GB SD 2GB 4GB 8GB 16G MLC M-die Component Family 8Gb MLC B-die Ver. Controller SKYMEDI SKYMEDI SKYMEDI SKYMEDI SMI 512MB 4Gb MLC A-die SMI SMI 1GB MicroSD (without adapter) 2GB 8Gb MLC B-die SKYMEDI SKYMEDI SKYMEDI SKYMEDI SKYMEDI SKYMEDI SKYMEDI SKYMEDI Manuf. Site STS STS STS STS STS ATP SPIL SPIL STS SPIL STS STS SPIL STS STS Part Number MM8GF01GWBCA-2MA00 MMAGF02GWMCA-2NA00 MMAGF04GWMCA-2NA00 MMAGF08GWMCA-2NA00 MM4GR512UACA-2PA00 MM4GR512UACU-2PA00 MM4GR512UACY-2PA00 MM8GR01GUBCY-2MA00 MM8GR01GUBCA-2MA00 MM8GR02GUBCY-2MA00 MM8GR02GUBCA-2MA00 MMAGR02GUDCA-2MA00 MM8GR04GUBCY-2MA00 MMAGR04GUDCA-2MA00 MMAGR08GUDCA-2MA135 MOQ

8Gb MLC 16G MLC

B-die M-die B-die M-die M-die

4GB 8GB

8Gb MLC 16G MLC 16G MLC
Please contact your local Samsung sales representative for latest product offerings. Note: All parts are lead free.
FLASH PRODUCT ORDERING INFORMATION

UtRAM2

HIGH-SPEED ASYNCHRONOUS SRAM
Density Organization Part Number K6R4016C1D K6R4016V1D K6R4004C1D K6R4004V1D K6R4008C1D K6R4008V1D # Pins-Package 44-SOJ, 44-TSOP2 44-SOJ, 44-TSOP2 32-SOJ 32-SOJ 36-SOJ, 44-TSOP2 36-SOJ, 44-TSOP2 Vcc (V) 5 3.3.3.3 Speed (ns) 10, 12 8, 10 Operaring Temp I I I I I I Operating Current (mA) 65, 55 80, 65 65, 55 80, 65 65, 55 80, 65 Operating Current (mA) 20, 5 20, 5 (1.2) 20, 5 20, 5 20, 5 20, 5 Production Status Mass Production Mass Production EOL EOL Mass Production Mass Production

256Kx16

512Kx8
SYNCHRONOUS PIPELINED BURST AND FLOW-THRU
Density Organization Part Number # PinsPackage 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP Operating Mode SPB SB SPB SB SPB SPB SB SPB SPB SB SPB SPB SB SPB SPB SB SPB SPB SB SPB SPB SPB SB Vdd (V) Access Time tCD (ns) 3.1 7.5 3.1 7.5 2.6, 3.5 3.1 7.5 2.6, 3.5 3.1 7.5 2.6 3.5 6.5 2.6 3.5 6.5 2.4 3.5 6.5 3.5 2.4 3.5 6.5 Speed tCYC (MHz) 250, 117 250, I/O Voltage (V) 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3,2.5 3.3,2.5 3.3,2.5 3.3,2.5 3.3,2.5 3.3,2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs 2E1D 2E1D 2E1D 2E1D 2E1D 2E1D 2E1D 2E1D 2E1D 2E1D 2E2D Comments

2Mx18 36Mb 1Mx36

K7A321830C K7B321835C K7A323630C K7B323635C K7A163630B
3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3
2E1D Ind Temp only 2E1D Ind Temp only 2E1D 2E2D

512Kx36 18Mb 1Mx18

K7A163631B K7B163635B K7A161830B K7A161831B K7B161835B K7A803609B

256x36 8Mb 512x18

K7A803600B K7B803625B K7A801809B K7A801800B K7B801825B K7A403609B

128Kx32 4Mb

K7A403600B K7B403625B K7A403200B K7A401809B

256Kx18

K7A401800B K7B401825B
All TQFP products are Lead Free 2E1D = 2-cycle Enable and 1-cycle Disable 2E2D = 2-cycle Enable and 2-cycle Disable SPB speed recommendations: For 200MHz use 250MHz; For 133MHz use 167MHz SB speed recommendation: Use 7.5ns Access Time use 6.5ns Access Time
Density Organization Part Number # PinsPackage 100-TQFP, 165FBGA 100-TQFP, 165FBGA 100-TQFP, 165FBGA 100-TQFP, 165FBGA 100-TQFP 100-TQFP 100-TQFP, 165FBGA 100-TQFP, 165FBGA 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP Operating Mode SPB SPB SPB SPB FT FT SPB SPB FT (SB) FT (SB) SPB SPB SPB SPB SPB SPB SPB SPB FT FT SPB SPB Vdd (V) Access Time tCD (ns) 2.6, 3.5 2.6, 3.5 2.6, 3.5 2.6, 3.5 7.5 7.5 2.6, 3.5 2.6, 3.5 6.5 6.5 3.5 3.5 2.6 2.6 3.5 3.5 2.6 2.6 6.5 6.5 3.0 3.0 Speed tCYC (MHz) 250, 167 250, 167 250, 167 250, 118 250, 167 250, 200 I/O Voltage (V) 2.5 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3,2.5 3.3,2.5 3.3,2.5 3.3,2.5 2.5 2.5 2.5 2.5 3.3, 2.5 3.3, 2.5 3.3,2.5 3.3,2.5 Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs

2Mx36 4Mx18 1Mx36

K7N643645M K7N641845M K7N323635C K7N321835C K7M323631C K7M321831C K7N161831B K7N163631B K7M161835B K7M163635B K7N803601B K7N801801B K7N803609B K7N801809B K7N803645B K7N801845B K7N803649B K7N801849B K7M801825B K7M803625B K7N403609B K7N401809B
2.5 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3 3.3 3.3 3.3 3.3 3.3 2.5 2.5 2.5 2.5 3.3 3.3 3.3 3.3

2Mx18 1Mx36 2Mx18 1Mx18

512Kx36 1Mx18 512Kx36 256Kx36 512Kx18 256Kx36 512Kx18
256Kx36 512Kx18 256Kx36 512Kx18 512Kx18 256Kx36

128Kx36 256Kx18

All TQFP products are Lead Free NtRAM speed recommendations: For 200MHz use 250MHz; For 133MHz use 167MHz NtRAM speed recommendation: Use 7.5ns Access Time use 6.5ns Access Time Recommended SPB speeds are 250MHz and 167MHz Recommended SB Acess Speed is 7.5ns

LATE-WRITE RR AND R-L

Type Density Organization Part Number # PinsPackage 119-BGA 119-BGA 119-BGA 119-BGA 119-BGA 119-BGA 119-BGA 119-BGA 119-BGA Operating Mode SP SP SP SP SP SP SP SP SP Vdd (V) Access Time tCD (ns) 1.6, 2.0 1.6, 2.0 1.6 1.6 2.0 2.0 2.5,2.7,3.0 2.5,2.7,3.0 6.5 Speed tCYC (MHz) 300,250 300,250 250,200,167 250,200,I/O Voltage (V) 1.5 (Max 1.8) 1.5 (Max 1.8) 1.5 (Max.2.0) 1.5 (Max.2.0) 1.5 (Max.2.0) 1.5 (Max.2.0) 2.5/3.3 2.5/3.3 2.5/3.3 Production Status C/S C/S Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs

32Mb LateWrite R-R

1Mx36 2Mx18 256Kx36
K7P323674C K7P321874C K7P803611B K7P801811B K7P803666B K7P801866B K7P403622B K7P401822B K7P401823B
1.8 / 2.5V 1.8 / 2.5V 3.3 3.3 2.5 2.5 3.3 3.3 3.3

512Kx18 256Kx36 512Kx18

LateWrite R-R and R-L
128Kx36 4Mb 256Kx18 256Kx18

DDR SYNCHRONOUS SRAM

Type Density Organization 512K x36 1M x18 256K x36 512K x18 Part Number K7D163674B K7D161874B K7D803671B K7D801871B K7I641882M 4M x18 72Mb 2M x36 K7I641884M K7J641882M K7I643682M K7I643684M K7J643682M K7I321882C 2M x18 DDR II CIO/ SIO 36Mb 1M x36 K7I321884C K7J321882C K7I323682C K7I323684C K7J323682C K7I161882B 1M x18 18Mb 512K x36 K7I161884B K7J161882B K7J163682B K7I163682B K7I163684B 36Mb DDR II+ CIO 18Mb
# PinsPackage 153-BGA 153-BGA 153-BGA 153-BGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA
Vdd (V) 1.8~2.5 1.8~2.5 2.5 2.5 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8
Access Time tCD (ns) 2.3 2.3 1.7/1.9/2.1 1.7/1.9/2.1 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45 0.45 0.45 0.45 0.45 0.45 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45 0.45 0.45 0.45
Cycle Time (MHz) 330, 300 330, 300 333, 330, 250 333, 330, 250 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 333,300,250 333,300,250 333,300,250 333,300,250 333,300,250 333,300,250 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 450, 400, 333 450, 400, 333 450, 400, 333 450, 400, 333
I/O Voltage (V) 1.5~1.9 1.5~1.9 1.5(Max 2.0) 1.5(Max 2.0) 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5 1.5 1.5 1.5
Production Status Mass Production Mass Production Not for new designs Not for new designs Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production

Comments

16Mb DDR 8Mb
CIO-2B CIO-4B SIO-2B CIO-2B CIO-4B SIO-2B CIO-2B CIO-4B SIO-2B CIO-2B CIO-4B SIO-2B
CIO-4B SIO-2B SIO-2B CIO-2B CIO-4B DDRII + CIO-2B DDRII + CIO-2B DDRII + CIO-2B DDRII + CIO-2B
2M x18 1M x36 1M x18 512K x36
K7K3218T2C K7K3236T2C K7K1618T2C K7K1636T2C
2B = Burst of 2 4B = Burst of 4 SIO = Separate I/O CIO = Common I/O For DDR II CIO/SIO: C-die use 330, 300, or 250MHz instad of 200MHz or 167MHz using a stable DLL circuit For DDR II+ CIO: 2-clock latency is available. A 2.5-clock latency can be supported on 18Mb at 500Mhz and 36Mb at 450MHz

CIO-2B

QDR SYNCHRONOUS SRAM
Type Density Organization 8M x9 4M x18 Part Number K7R640982M K7R641882M K7R641884M K7R643682M K7R643684M K7R320982C K7R321882C K7R321884C K7R323682C K7R323684C K7R160982B K7R161882B 1M x18 QDR I, QDR II 18Mb K7R161884B K7Q161862B K7Q161864B K7R163682B 512K x36 K7R163684B K7Q163662B K7Q163664B 36Mb QDR II+ 18Mb
# PinsPackage 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA
Vdd (V) 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8
Access Time tCD (ns) 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45 0.45 0.45 0.45 0.45 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.45,0.50
Cycle Time (MHz) 250,200,167 250,200,167 300,250,200,167 250,200,167 300,250,200,167 300, 250, 200 300, 250, 200 333, 300, 250 300, 250, 200 333, 300, 250 250,200,167 250,200,167 300,250,200,167 250,200,167 300,250,200,167 450, 400, 333 450, 400, 333 450, 400, 333 450, 400, 333
I/O Voltage (V) 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5 1.5 1.5 1.5
Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production
Comments QDR II-2B QDR II-2B QDR II-4B QDR II-2B QDR II-4B QDR II-2B QDR II-2B QDR II-4B QDR II-2B QDR II-4B QDR II - 2B QDR II - 2B QDR II - 4B QDR I - 2B QDR I - 4B QDR II - 2B QDR II - 4B QDR I - 2B QDR I - 4B QDR II + 4B QDR II + 4B QDR II + 4B QDR II + 4B
2M x36 QDR II 4M x9 2M x18

1M x36 2M x9

1.8v / 2.5v 2.5 1.8v / 2.5v 2.5 1.8 1.8 0.45,0.45,0.50 0.45,0.45,0.45,0.50
1.8v / 2.5v 2.5 1.8v / 2.5v 2.5 1.8 1.8 1.8 1.8 0.45 0.45 0.45 0.45
1M x36 2M x18 1M x18 512K x36
K7S3218T4C K7S3236T4C K7S1618T4C K7S1636T4C
For QDR I, QDR II: 2B = Burst of 2, 4B = Burst of 4 For QDR II (36Mb): C-die use 300, 250MHz or 200MHz instead of 167MHz using a stable DLL circuit For QDR II (72Mb): 2B = Burst of 2 and 250MHz or 200MHz is recommended, 4B = Burst of 4 and 300MHz or 250MHz is recommended For QDR II+: 2-clock latency supported. 2.5-clock latency can be supported with 450MHz speed

SYNCHRONOUS SRAM ORDERING INFORMATION
SAMSUNG Memory Sync SRAM Small Classication Density Density Organization Organization Vcc, Interface, Mode
Packaging Type Speed Speed Temp, Power Package --Generation Vcc, Interface, Mode
1. Memory (K) 2. Sync SRAM: 7 3. Small Classification
A: Sync Pipelined Burst B: Sync Burst D: Double Data Rate I: Double Data Rate II, Common I/O J: Double Data Rate, Separate I/O K: Double Data II+, Common I/O M: Sync Burst + NtRAM N: Sync Pipelined Burst + NtRAM P: Sync Pipe Q: Quad Data Rate I R: Quad Data Rate II S: Quad Data Rate II+
49: 2.5V,LVTTL,Hi SPEED 52: 2.5V,1.5/1.8V,HSTL,Burst2 54: 2.5V,1.5/1.8V,HSTL,Burst4 62: 2.5V/1.8V,HSTL,Burst2 64: 2.5V/1.8V,HSTL,Burst4 66: 2.5V,HSTL,R-R 74: 1.8V,2.5V,HSTL,All 82: 1.8V,HSTL,Burst2 84: 1.8V,HSTL,Burst4 88: 1.8V,HSTL,R-R T2: 1.8V,2Clock Latency,Burst2 T4: 1.8V,2Clock Latency,Burst4 U2: 1.8V,2.5Clock Latency,Burst2 U4: 1.8V,2.5Clock Latency,Burst4
WAFER, CHIP BIZ Level Division 0: NONE,NONE 1: Hot DC sort 2: Hot DC, selected AC sort

14~15. Speed

Sync Burst,Sync Burst + NtRAM < Mode is R-L > (Clock Accesss Time) 65: 6.5ns 70: 7ns 75: 7.5ns 80: 8ns 85: 8.5ns Other Small Classification (Clock Cycle Time) 10: 100MHz 11: 117MHz 13: 133MHz 14: 138MHz 16: 166MHz 20: 200MHz 25: 250MHz 26: 250MHz(1.75ns) 27: 275MHz 30: 300MHz 33: 333MHz 35: 350MHz 37: 375MHz 40: 400MHz(t-CYCLE) 42: 425MHz 45: 450MHz 50: 500MHz (except Sync Pipe)
M: 1st Generation A: 2nd Generation B: 3rd Generation C: 4th Generation D: 5th Generation
80: 8M 40: 4M 64: 72M 16: 18M 32: 36M

11. --

09: x9 32: x32

08: x8 18: x18 36: x36

12. Package
H: BGA,FCBGA,PBGA G: BGA, FCBGA, FBGA (LF) F: FBGA E: FBGA (LF) Q: (L)QPF P: (L)QFP(LF) C: CHIP BIZ W: WAFER
16. Packing Type (16 digit)
- Common to all products, except of Mask ROM - Divided into TAPE & REEL (In Mask ROM, divided into TRAY, AMMO packing separately) Type Packing Type New Marking Component TAPE & REEL T Other (Tray, Tube, Jar) 0 (Number) Stack S Component TRAY Y (Mask ROM) AMMO PACKING A Module MODULE TAPE & REEL P MODULE Other Packing M
8~9. Vcc, Interface, Mode
00: 3.3V,LVTTL,2E1D WIDE 01: 3.3V,LVTTL,2E2D WIDE 08: 3.3V,LVTTL,2E2D Hi SPEED 09: 3.3V,LVTTL,Hi SPEED 11: 3.3V,HSTL,R-R 12: 3.3V,HSTL,R-L 14: 3.3V,HSTL,R-R Fixed ZQ 22: 3.3V,LVTTL,R-R 23: 3.3V,LVTTL,R-L 25: 3.3V,LVTTL,SB-FT WIDE 30: 1.8/2.5/3.3V,LVTTL,2E1D 31: 1.8/2.5/3.3V,LVTTL,2E2D 35: 1.8/2.5/3.3V,LVTTL,SB-FT 44: 2.5V,LVTTL,2E1D 45: 2.5V,LVTTL,2E2D

13. Temp, Power

COMMON (Temp,Power) 0: NONE,NONE (Containing of error handling code) C: Commercial,Normal E: Extended,Normal I: Industrial,Normal

MCP: NOR/DRAM

NOR Density 512Mb UtRAM or DRAM Density/ Organization 128Mb (x16) 256Mb (x16) Voltage (NOR-DRAM) 1.8V - 1.8V 1.8V - 1.8V Package 103FBGA
MCP: OneDRAM/OneNAND/NAND
OneDRAM Org A-port : x32 B-port : x32 A-port : x16 B-port : x32 A-port : x16 B-port : x32 A-port : x32 B-port : x32 Vcc 1.8V 1.8V 1.8V 1.8V Speed 166MHz@CL=3 166MHz@CL=3 166MHz@CL=3 Opr. A-port : SDR B-port : DDR A-port : DDR B-port : DDR A-port : SDR B-port : DDR A-port : SDR B-port : DDR Org x16 x16 x16 x16 OneNAND/NAND Vcc 1.8V 1.8V 1.8V 1.8V Speed 83Mhz 83Mhz 83Mhz 83Mhz Type Mux Mux Mux Mux Version AQD AQD AQD AAQD Part No. KAC00F008M-AE77000 KAC00F00XM-AE77000 TBD KBZ00900PM-A439000 PKG Information Size 14*14*1.15 14*14*1.15 14*14*1.15 14*14*1.25 Type 240FBGA 240FBGA 240FBGA 240FBGA
* OneDRAM 512Mb now EOL * Based on demand, OneDRAM is in MCP only, not in discrete package

103FBGA

OneNAND
OneNAND is a monolothic IC that combines a NAND flash array with a NOR flash interface plus an SRAM buffer. Its ideal for high-performance, high-density applications.
Part Number KFG1216Q2B-DEB8000 KFG1216U2B-DIB6000
Package 63FBGA (9.5x12) 63FBGA (9.5x12) 67FBGA (7x9) 67FBGA (7x9) 63 FBGA (9.5x12) 63 FBGA (10x13) 63 FBGA (10x13) 63 FBGA (10x13) 63 FBGA (10x13) 63 FBGA (10x13) 63 FBGA (10x13)
Org. X16 X16 X16 X16 X16 X16 X16 X16 X16 X16 X16
Voltage (V) 1.8 3.3 1.8 3.3 1.8v 3.3v 1.8v 1.8v 1.8v 1.8v 1.8v
Temp. extended industrial extended industrial extended industrial extended extended extended extended extended
Speed 83Mhz 66Mhz 83Mhz 66Mhz 83Mhz 66Mhz 83Mhz 83Mhz 83Mhz 83Mhz 83Mhz
MOQ (Tray) 1,120 1,120 1,120 1,120 1,120 1,120 1,120 1,120 1,120 1,120 1,120

Remarks

KFG1216Q2B-SEB8000 KFG1216U2B-SIB6000 KFM1216Q2B-DEB8000 KFG1G16U2C-AIB6000
KFG1G16Q2C-AEB8000 KFM1G16Q2C-DEB8000

2Gb 4Gb DDP

KFG2G16Q2A-DEB8000 KFM2G16Q2A-DEB8000 KFH4G16Q2A-DEB8000
*T&R MOQ 2Kpcs **Please contact your local Samsung sales representative for latest product offerings & information on support & availability. NOTE: All parts are lead free

Flex-OneNAND

A monolithic IC with a NAND flash array using a NOR flash interface, Flex-OneNAND enables partitioning into SLC and MLC areas so the chip can be configured for storage or high-speed access.
Part Number KFG4GH6Q4M-DEB8000
Package 63 FBGA (10x13) 63 FBGA (10x13) 63 FBGA (10x13) 63 FBGA (10x13)

Org. X16 X16 X16 X16

Voltage (V) 1.8v 3.3V 1.8v 3.3V
Temp. extended Industrial extended Industrial
Speed 83Mhz 66Mhz 83Mhz 66Mhz
MOQ (Tray) 1,120 1,120 1,120 1,120
Remarks FSR software required FSR software required Muxed. FSR SW req. FSR software required

4Gb Flex-OneNAND

KFG4GH6U4M-DIB6000 KFM4GH6Q4M-DEB8000

Data Transfer Rate MAX Media Type DVD+R DVD+RW DVD+R DUAL DVD-R DUAL DVD-R DVD-RW DVD-ROM (Single) DVD-ROM (Dual) CD-ROM CD-R US-RW HS-RW CD-RW DVD-RAM Data transfer mode Interface Buffer Memory Drive Install Form Size (W * H * L) Buffer Protection Lead Free Light Scribe Write 22X (29.7 MB/sec) 8X (10.8MB/sec) 16X (21.6MB/sec) 12X (16.2MB/sec) 22X (29.7 MB/sec) 6X (8.1MB/sec) 48X (7.2MB/sec) 32X (4.8MB/sec) 10X (1.5MB/sec) 4X (5.4MB/sec) 12X (16.2MB/sec) Read 16X (21.6MB/sec) 12X (16.2MB/sec) 12X (16.2MB/sec) 12X (16.2MB/sec) 16X (21.6MB/sec) 12X (16.2MB/sec) 16X (21.6MB/sec) 12X (16.2MB/sec) 48X (7.2MB/sec) 40X (6.0MB/sec) 40X (6.0MB/sec) 40X (6.0MB/sec) 40X (6.0MB/sec) 12X (16.2MB/sec)
Ultra DMA Mode 2: 33.3MB/sec, Multiword DMA mode2: 16.6MB/sec, PIO Mode 4: 16.7MB/sec ATA/ATAPI (E-IDE) 2M Horizontal / Vertical 148.2mm (W) x 42mm (H) X 170mm (D) with bezel yes yes no

www.samsungodd.com

SH-S223Q Optical Storage
1. DISC SUPPORT - READ: MASTERED DISC, CD-R, CD-RW, DVD-ROM, DVD-R 3.95GB, DVD-R 4.7GB Authoring, DVD-R 4.7GB General, DVD-RW 4.7GB, DVD-RW 8.5 GB(Double-layer), DVD+R 4.7GB, DVD+R 8.5GB(Double-layer), DVD+RW 4.7GB, DVD-RAM 4.7GB/2.6GB - WRITE: DVD 4.7GB(DVDR, DVDRW, DVD-RAM), Double LayerR, Double Layer-RW, CD-R, CD-RW - Print: DVD+/-R ( LF Media [Label/Data Side] / Non LF Media [Data Side] ) - (Optional) 2. DATA FORMAT: - CD: CD-DA, CD-ROM, MIXED-CD, CD-ROM XA, ENHANCED-CD, CD-EXTRA/CD+, Photo-CD, VIDEO-CD, CD-TEXT, CD-G, Multi-Session - DVD: DVD-RAM, DVD-ROM, DVD-VIDEO, Multi-Session(Read/Write), Multi-Border(Read)
Data Transfer Rate MAX Media Type DVD+R DVD+RW DVD+R DUAL DVD-R DUAL DVD-R DVD-RW DVD-ROM (Single) DVD-ROM (Dual) CD-ROM CD-R US-RW HS-RW CD-RW DVD-RAM Access Time Data transfer mode Interface Buffer Memory Drive Install Form Size (W * H * L) Buffer Protection Lead Free Light Scribe Write 22X(29.7 MB/sec) 8X (10.8MB/sec) 16X (21.6MB/sec) 12X (16.2MB/sec) 22X(29.7 MB/sec) 6X (8.1MB/sec) 48X (7.2MB/sec) 32X (4.8MB/sec) 10X (1.5MB/sec) 4X (0.6MB/sec) 12X (16.2MB/sec) SATA 1.5Gbps Serial-ATA 2M Horizontal / Vertical 148.2mm (W) X 170mm (D) X 42mm (H) with bezel Applied Applied Applied Read 16X (21.6MB/sec) 12X (16.2MB/sec) 12X (16.2MB/sec) 12X (16.2MB/sec) 16X (21.6MB/sec) 12X (16.2MB/sec) 16X (21.6MB/sec) 12X (16.2MB/sec) 48X (7.2MB/sec) 40X (6.0MB/sec) 40X (6.0MB/sec) 40X (6.0MB/sec) 40X (6.0MB/sec) 12X (16.2MB/sec)
CD 110ms (Random), DVD 130ms (Random)

SH-S223F Optical Storage

Data Transfer Rate MAX Media Type DVD+R DVD+RW DVD+R DUAL DVD-R DUAL DVD-R DVD-RW DVD-ROM (Single) DVD-ROM (Dual) CD-ROM CD-R US-RW HS-RW CD-RW DVD-RAM Access Time Data transfer mode Interface Buffer Memory Drive Install Form Size (W * H * L) Buffer Protection Lead Free Light Scribe Write 22X(29.7 MB/sec) 8X (10.8MB/sec) 16X (21.6MB/sec) 12X (16.2MB/sec) 22X(29.7 MB/sec) 6X (8.1MB/sec) 48X (7.2MB/sec) 32X (4.8MB/sec) 10X (1.5MB/sec) 4X (0.6MB/sec) 12X (16.2MB/sec) SATA 1.5Gbps Serial-ATA 2M Horizontal / Vertical 148.2mm (W) x 42mm (H) X 170mm (D) with Bezel yes yes no JANUARY 2009 www.samsungodd.com Read 16X (21.6MB/sec) 12X (16.2MB/sec) 12X (16.2MB/sec) 12X (16.2MB/sec) 16X (21.6MB/sec) 12X (16.2MB/sec) 16X (21.6MB/sec) 12X (16.2MB/sec) 48X (7.2MB/sec) 40X (6.0MB/sec) 40X (6.0MB/sec) 40X (6.0MB/sec) 40X (6.0MB/sec) 12X (16.2MB/sec)

Storage e

Solid State Drives Hard Drives Optical Disc Drives

LCD Panels Pa

TV Monitors Notebook PC Mobile
Samsung Semiconductor, Inc. 3655 North First Street San Jose, CA 95134-1713

doc1

The 1 Gbps Ethernet readout for test phase

Bartosz Mindur

AGH Krakw/HMI Berlin

Outline

Test environment for 1 Gbps
Evaluation board PC for tests Software Throughput Stability

Test results

Ethernet Wrapper IP core 1 Gbps storage hardware requirements Memec Mini-Module and base board 10 Gbps Ethernet Summary
September 27, 2006 B. Mindur, DETNI meeting Berlin 2
Xilinx ML403 Evaluation Board
Virtex-4 FX12 FPGA 10/100/1000 Trimode Ethernet connector Marvell Alaska PHY device (88E1111) Expansion headers
Differential clock input and output (SMA connectors) JTAG configuration port System ACE and CompactFlash connector
Differential expansion I/O connectors Single-Ended expansion I/O connectors

September 27, 2006

B. Mindur, DETNI meeting Berlin

PC for tests

Standard workstation PC
AMD Athlon 3200+ (2 GHz) 1 GB RAM
NIC: SK-9E21 10/100/1000 BaseT Server Adapter
Very good performance Drivers ver. 8.53.2.3 www.syskonnect.de
MS Windows XP SP 2 MS Windows Driver Development Kit ver. 3790.1830 MS Visual C++ 2003
September 27, 2006 B. Mindur, DETNI meeting Berlin 4

For NDIS driver

Ethernet Cores Hardware Demonstration Platform
The XAPP443 describes the functionality of Ethernet cores in Xilinx FPGA hardware
Especially embedded trimode Ethernet MAC (Virtex4 FX family)
Hard MAC Ethernet Statistics Core Ethernet FIFO (XAPP691) 4 kB of size Physical Interface Microprocessor system (for controlling the functionality)
PC application for XAPP443
Controls of the MAC configuration
Jumbo frames Length checking
Changing of the send frame parameters

Especially length

Checking received frames
September 27, 2006 B. Mindur, DETNI meeting Berlin 6

PC receiving software

NDIS driver
No dedicated driver for raw frames in Windows For developing driver Windows DDK was used Driver is based on NdisProt example
Optimized for receiving frames Not optimized for sending frames

Test application

Receives frames Measures throughput Checks for lost frames
Application itself Driver counters Counter inside frame data
Throughput tests (performance)

Frame size [B] 1900 2000

Throughput [Mbps] 975.0 976.2 977.7 979.2 980.2 980.6

Frame size [B] 4000 4082

Throughput [Mbps] 924.4 718.8 602.2 539.7 500.5 332.0
Throughput tests (stability)
Frame size [B] Frame size (payload) [B] Number of frames Number of lost frames Number of bytes Number of bytes (payload) Time [d:h:m:s] Throughput [Mbps]
September 27, 2006 B. Mindur, DETNI meeting Berlin

000 9:18:15:07 975.3

Storing 1 Gbps throughput
Workstation PC during tests
The only one HDD Samsung HD160JJ

280 Mbps

PC for test phase
SATA Raid 0 with at least four HDDs

Time of measurement

eg. Seagate ST37506640AS or Maxtor DiamondMax 6H500F0
4 x 750GB -> ~6.5 hours
B. Mindur, DETNI meeting Berlin 10
Minimodule and base boards
Memec Virtex-4 FX12 Mini-Module
Base board only necessary for evaluation
Needs external power supply (1.2, 2.5, 3.3V) and JTAG All other components are sitting on board Cost: $250
Quite cheap solution for 1 Gbps readout system for test phase

Cost of the kit: $425

30 mm x 65.5 (+ 5) mm

Ethernet Wrapper IP core

Illustrates usage of the Hard EMAC built-in Virtex4 FX Provides a FIFOloopback example design Allows to use appropriate physical interface eg. GMII Unfortunately until now not operational on Xilinx evaluation board ML403
Moving to 10 Gbps Ethernet

Virtex4 FX 20+ with MGTs

XAUI interface (IP Core from Xilinx for free)
Serial interface 3.125 GHz Up to 50 cm on PCB + two connectors Eg. Zarlink Semiconductor ZL60304
MGTs directly connected do transceiver
10G Ethernet NIC with XAUI

Eg. Myri-10G-PCIE-8A-Q

10 GEMAC IP Core from Xilinx (~$24 000)
Sorting board with 10 Gbps interface Dedicated storage system (>10 000) ??
September 27, 2006 B. Mindur, DETNI meeting Berlin 13
Summary Verified in hardware 1 Gbps data throughput Almost ready to use software for PC (only for storage) Existing ready to use Mini-Module board Relatively cheap solution Provide necessary experience for further development for 10 Gbps Ethernet read out system

 

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