P80SD Series

CAPACITY1 MODEL

FEATURES

80GB Formatted Capacity Per Disk Native Serial ATA II (3.0Gbps) with Native Command Queuing (NCQ) Fluid Dynamic Bearing Spindle Motor Technology High Speed Dual Digital Signal Processor (DSP) Based Architecture ATA SMART Compliant ATA Security Mode Feature Set ATA Host Protected Area Feature Set ATA Automatic Acoustic Management Feature Set ATA 48-bit Address Feature Set ATA Streaming Feature Set(Optional) Staggerd Spin Up support ATA Device Configuration Overlay Feature Set Permuted RLL/ECC On-The-Fly Error Correction RoHS-compliant NoiseGuard SilentSeek Hot-Plug & Hot-Swap capable

HD040GJ

HD080HJ

HD120IJ

HD160JJ
ENVIRONMENTAL SPECIFICATIONS
Temperature Operating 0 ~ 60 C Non-operating -40 ~ 70 C Thermal Gradient (max.) 20C/hr Humidity (non-condensing) Operating 5 ~ 90 % Non-operating 5 ~ 95 % Linear Shock (1/2 sine pulse) Operating, 2ms 63 G Non-operating, 2ms 350 G Vibration (swept sine, 0.25 octave per minute) Operating 5 ~ 21 Hz 0.034 (double amplitude) 21 ~ 300 Hz 1.5 Go-p Non-operating 5 ~ 21 Hz 0.195 (double amplitude) 21 ~ 500 Hz 8 Go-p Altitude (relative to sea level) Operating -1,000 to 10,000 feet Non-operating -1,000 to 40,000 feet

DRIVE CONFIGURATION

Interface Buffer DRAM Size Bytes per Sector Serial ATA II 3.0Gbps 8 MB 512

POWER REQUIREMENTS

Voltage Spin Up Current (max.) Seek4 (typ.) Read/Write On-Track (typ.) Normal (typ.) Idle (typ.) 5 Standby6 (typ.) Sleep6 (typ.) +5V5%, +12V10% 650 / 1900 mA 9.0 W 8.0 W 7.8 W 6.8 W 0.7/1.5 W 0.7/1.5 W
PERFORMANCE SPECIFICATIONS
Read Seek Time (typ.) Track to Track Average Full Stroke Average Latency Rotational Speed2 Maximum Data Transfer Rate Media to/from Buffer Buffer to/from Host Drive Ready Time (typ.) 0.8 ms 8.9 ms 18 ms 4.17 ms 7,200 RPM 880 MB/sec 300 MB/sec 7 sec

PHYSICAL DIMENSION

Height Width Depth Weight 1 in 4 in 5.75 in 1.43 lb
Specifications are subject to change without notice.
RELIABILITY SPECIFICATIONS
Non-recoverable Read Error MTBF Start/Stop Cycles (Ambient) Component Design Life 1 sector in 1014 bits 600,000 POH 50,years
1MB=1,000,000 Bytes 1GB=1,000,000,000 Bytes. 7,200 RPM class. Actual speed can be different a little. Averaged value under fast mode. Random seek with 30% duty cycle. Idle with slumber mode. Power consumption with/without slumber mode.
ACOUSTICS (AVERAGE SOUND POWER)
Idle Random Read/Write3 2.7 Bel 3.1 Bel
P80SD Product Data Sheet Rev1.0 (03-16-05)

Samsung Semiconductor, Inc.

Product Selection Guide

Memory and Storage August 2007

MEMORY AND STORAGE

DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION ASYNCHRONOUS SRAM HIGH DENSITY, LOW POWER (UtRAM) HIGH-SPEED ASYNCHRONOUS FAST SRAM ASYNCHRONOUS SRAM ORDERING INFORMATION SYNCHRONOUS SRAM SPB & FT SRAM NtRAM LATE-WRITE R-R SRAM DDR / II / II+ SRAM QDR / II / II+ SRAM SYNCHRONOUS SRAM ORDERING INFORMATION MULTI-CHIP PACKAGE NAND/DRAM NOR/SRAM and NOR/UtRAM OneNAND/DRAM NOR/DRAM MOST COMMON MCPS FUSION MEMORY OneNAND moviNAND Flex-OneNAND OneDRAM HARD DRIVES HARD DISK DRIVES FLASH-ENABLED DRIVES HYBRID HARD DRIVES FLASH SOLID STATE DRIVES EXTERNAL OPTICAL DRIVES EXTERNAL DVD INTERNAL OPTICAL DRIVES INTERNAL DVD INTERNAL COMBO INTERNAL CD
3 3-4 4-5 5-8-15 15-16 16-23 24-28-32

DDR3 / DDR2 SDRAM

DDR3 SDRAM UNBUFFERED MODULES

Density 512MB 1GB 2GB

NOTES:
Org 64Mx64 128Mx64 256Mx64

E7=DDR3-800 (5-5-5)

Speed (Mbps) 800/1066/1333 800/1066/1333 800/1066/1333

F8 = DDR3-1066 (7-7-7)

Part Number M378B6474CZ0-C(F7/F8/H9) M378B2873CZ0-C(F7/F8/H9) M378B5673CZ0-C(F7/F8/H9)

G9=DDR3-1333 (8-8-8)

Rank 2
Composition 1Gb(64M x16) * 4 1Gb(128M x8) * 8 1Gb(128M x8) * 16

Voltage: 1.5V

Package RoHS RoHS RoHS

DDR3 SDRAM COMPONENTS

Density 1Gb 1Gb 1Gb
Org 256M x4 128M x8 64M x16

E7=DDR3-800 (6-6-6)

Part Number K4B1G0446C-ZC(F7/F8/H9) K4B1G0846C-ZC(F7/F8/H9) K4B1G1646C-ZC(F7/F8/H9)
G9=DDR3-1333 (9-9-9) Voltage: 1.5V
Package 94ball FBGA 94ball FBGA 112ball FBGA
Package Dimension 11x18mm 11x18mm 11x18mm
DDR2 SDRAM REGISTERED MODULES
Density 512MB 1GB 1GB 1GB 1GB 2GB 2GB 2GB 2GB 2GB 2GB 4GB 4GB
Org 64Mx72 128Mx72 128Mx72 128Mx72 128Mx72 256Mx72 256Mx72 256Mx72 256Mx72 256Mx72 256Mx72 512Mx72 512Mx72
CC=PC2-3200 (DDR2-400 @ CL=3)
Speed (Mbps) 400/533/667 400/533 400/533 400/533/667 400/533/667 400/533 400/533 400/533 400/533/667 400/533/667 533/667 400/533 400/533/667
D5=PC2-4200 (DDR2-533 @ CL=4)
Part Number M393T6553EZA-C(CC/D5/E6) M393T2950EZ3-C(CC/D5) M393T2953EZ3-C(CC/D5) M393T2950EZA-C(CC/D5/E6) M393T2953EZA-C(CC/D5/E6) M393T5750EZ3-C(CC/D5) M393T5660CZ3-C(CC/D5) M393T5663CZ3-C(CC/D5) M393T5750EZ3-C(CC/D5/E6) M393T5660CZA-C(CC/D5/E6) M393T5663CZA-C(D5/E6) M393T5160CZ0-C(CC/D5) M393T5160CZA-C(CC/D5/E6)
Parity Register Y N N Y Y N N N Y Y Y N Y
Composition (64M x8)*9 (128M x4)*18 (64M x8)*18 (128M x4)*18 (64M x8)*18 (128M x4)*36 (256M x4)*18 (128M x8)*18 (128M x4)*36 (256M x4)*18 (128M x8)*18 st. (512M x4)*18 st. (512M x4)*18
Package Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free
E6=PC2-5300 (DDR2-667 @ CL=5)

Voltage:1.8V

Module Height=1.2"
DDR2 SDRAM FULLY BUFFERED MODULES
Density 512MB 512MB 1GB 1GB 2GB 2GB 4GB 4GB

NOTES: 50=Intel AMB

Org 64Mx72 64Mx72 128Mx72 128Mx72 256Mx72 256Mx72 512Mx72 512Mx72

60: IDT AMB

Speed (Mbps) 533 533

Voltage for AMB:1.5V

Part Number M395T6553EZ4-CD5(50/60/20) M395T6553EZ4-CE6(50/60/20) M395T2953EZ4-CD5(50/60/20) M395T2953EZ4-CE6(50/60/20) M395T5750EZ4-CD5(50/60/20) M395T5750EZ4-CE6(50/60/20) M395T5160CZ4-CD5(50/60/20) M395T5160CZ4-CE6(50/60/20)

Voltage for DRAM:1.8V

Rank 2 2
Composition (64M x8)*9 (64M x8)*9 (64M x8)*18
(128M x4)*36 st. (512M x4)*18 st. (512M x4)*18
Package Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free

20: NEC AMB

DDR2 DRAM SODIMM MODULES
Density 512MB 1GB 1GB 2GB
Org 64Mx64 128Mx64 128Mx64 256Mx64
Speed (Mbps) 533/667 533/667 533/667 533/667
D5 =PC2-4200 (DDR2-533 @ CL=4)
Part Number M470T6554EZ3-C(D5/E6) M470T2953EZ3-C(D5/E6) M470T2864DZ3-C(D5/E6) M470T5663CZ3-C(D5/E6)
Composition (32M x16)*8 (64M x8)*16 (64M x16)*8 st.(256M x8)*8

Voltage: 1.8V

Package Lead-free Lead-free Lead-free Lead-free

AUGUST 2007

BR-07-ALL-001
SAMSUNG SEMICONDUCTOR, INC.

DDR2 / DDR SDRAM

DDR2 SDRAM UNBUFFERED MODULES
Org 64Mx64 128Mx64 128MX72 256Mx64

DDR SDRAM DIMM MODULES: UNBUFFERED
Density 512MB 512MB 1GB 1GB
Org 64MX64 64Mx72 128Mx64 128Mx72
Speed (Mbps) 333/400 333/400 333/400 333/400
A2 = DDR266 (133MHz @ Cl=2) Package: TSOP components
Composition (64M x8) *8 (64M x 8)*9 (64M x 8)*16 (64M x 8)*18
Part Number M368L6523DUS-CB3/CCC M381L6523DUM-CB3/CCC M368L2923DUN-CB3/CCC M381L2923DUM-CB3/CCC
Notes Pb-free Pb-free Pb-free Pb-free
B3 = DDR333 (166MHz @ CL=2.5) Voltage: 2.5V

DDR SDAM / SDRAM

DDR SDRAM COMPONENTS
Density 256M 256M 256M 256M 256M 256M 512M 512M 512M 512M 512M 512M 512M 512M
Org 64Mx4 64Mx4 32Mx8 32Mx8 16Mx16 16Mx16 128Mx4 128Mx4 64Mx8 64Mx8 64Mx8 32Mx16 32Mx16 32Mx16
B0 = DDR266 (133MHz @ CL=2.5)
Speed (Mbps) 266 333/400 333/400 333/400 333/400 333/400 333/400 333/400 333/400 333/400 333/400 333/400 333/400 333/400
Part Number K4H560438H-UC(L)B0 K4H560438H-ZC(L)CC/B3 K4H560838H-UC(L)B3/CCC K4H560838H-ZC(L)B3/CCC K4H561638H-UC(L)/B3/CCC K4H561638H-ZC(L)B3/CCC K4H510438D-ZC(L)B3/CCC K4H510438D-ZC(L)B3/CCC K4H510838D-UC(L)B3/CCC K4H510838D-ZC(L)B3/CCC K4H510838D-UC(L)B3/CCC K4H511638D-UC(L)B3/CCC K4H511638D-ZC(L)B3/CCC K4H511638D-UC(L)B3/CCC
Package 66 pin TSOP 60 ball FBGA 66 pin TSOP 60 ball FBGA 66 pin TSOP 60 ball FBGA 60 ball FBGA 60 ball FBGA 66 pin TSOP 60 ball FBGA 66 pin TSOP 66 pin TSOP 60 ball FBGA 66 pin TSOP
Notes Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free
1U SDRAM DIMM MODULES, PC133 / PC100 COMPLIANT: REGISTERED
LOW-PROFILE DIMMs (1.2-INCH HEIGHT)
Density 128MB** 256MB 512MB 1GB 1GB 2GB Org 16Mx72 32Mx72 64Mx72 128Mx72 128Mx72 256Mx72 Speed PC133 PC133 PC133 PC133 PC133 PC133
Type: 168 pin, Double sided
Composition (16x8)*9 (32Mx8)*9 (64Mx4)*18 (St.128Mx4)*18 (128Mx4)*18 (St.128Mx4)*18
Part Number M390S1723TU - C7A00 M390S3253HUU - C7A00 M390S6450HUU - C7A00 M390S2858ETU - C7A00 M390S2950DUU - C7A00 M390S5658DUU - C7A00

Voltage: 3.3V

# Banks Module 2 2

stacked, avail Q204

Refresh 4K 8K 8K 8K 8K 8K

Remarks

stacked
NOTES: St.= Stacked components

Package: TSOP Components

SDRAM SODIMM MODULES
Density 128MB 256MB 256MB 512MB 512MB Org 16Mx64 32Mx64 32Mx64 64Mx64 64Mx64 Speed PC133 PC133 PC133 PC133 PC133 Composition (8Mx16)*8 (16Mx16)*8 (32Mx16)*4 (32Mx16)*8 (64Mx8)*16

Interface: SSTL-2

Part Number M464S1724ITS-L7A00 M464S3254HUS-L7A00 M464S3354DUS-C(L)7A M464S6554DUS-C(L)7A M464S6453HV0-C75/L7500

RIMM MODULES
Density 128MB ECC 256MB ECC 512MB ECC 128MB NON-ECC 256MB NON-ECC Org x18 x18 x18 x16 x16 Speed (Mbps) 800/1066Mbps 800/1066Mbps 800/1066Mbps 800/1066Mbps 800/1066Mbps # of Devices 8 Part Number MR18R1624EG0-CM8/T9 MR18R1628EG0-CM8/T9 MR18R162GEG0-CM8/T9 MR16R1624EG0-CM8/T9 MR16R1628EG0-CM8/T9 Component 288Mb 288Mb 288Mb 256Mb 256Mb

RDRAM COMPONENTS

Density 288Mb 128Mb *

NOTES: Voltage: 2.5 v

Org x18 x16
Speed (Mbps) 800/1066 800/1066
Part Number K4R881869E-GCM8/T9 K4R271669F-SCK8/S8
Refresh 16K/32ms 16K/32ms
Package 92ball FBGA 54ball FBGA
GRAPHICS MEMORY SELECTION GUIDE
Type GDDR4 GDDR3 Density 512Mb 512Mb 256Mb GDDR2 512Mb 256Mb 256Mb 128Mb 8Mx16 Org 16Mx32 16Mx32 8Mx32 32Mx16 16Mx16 16Mx16 4Mx32 Part Number K4U52324Q K4J52324Q K4J55323Q K4N51163Q K4N56163Q K4D551638 K4D263238 K4DPackage VDD/VDDQ 136 FBGA* 136 FBGA* 136 FBGA 84 FBGA FBGA 66 TSOPII 144 FBGA 66 TSOPII Speed 1.8/1.8V 1.95/1.95V 1.8/1.8V 1.9/1.9V 1.8/1.8V 1.9/1.9V 1.8/1.8V 1.9/1.9V 1.8/1.8V 2.5/2.5V 2.5/2.5V 2.5/2.5V Bin (MHz) 1100/1200/CS 700/800 900/1000/1200 700/800/ 900/1000 350/400 450/500 350/400/450/500 200/250 200/250 200/250
*lead free only * clock cycle time 09 1A 11 0.71ns 0.83ns 0.90ns 1ns 1.11ns (1400MHz) (1200MHz) (1100MHz) (1000MHz) (900MHz)
** all products are 4 banks 12 1.25ns (800MHz) 14 1.429ns (700MHz) 16 1.667ns (600MHz) 20 2.0 ns (500MHz) 22 2.2 ns (450MHz) 25 2.5 ns (400MHz) 2A 2.86 NS (350MHz) 50 3.3 ns 4.0 ns 5.0 ns (300MHZ) (250MHz) (200MHz)
Part No. Suffix Description
Product chart for fusion memory solution, OneDRAM, is on page 23.
DRAM Ordering Information
DRAM ORDERING INFORMATION
K 1 1. 2. 3. Memory (K) DRAM:4 Small Classification A:Advanced Dram Technology B:DDR3 SDRAM D: DDR SGRAM E: EDO F: FP H: DDR SDRAM J: GDDR3 SDRAM K: Mobile SDRAM PEA L: Mobile L2RAM M: Mobile SDRAM N: DDR SGRAM II R: Direct RDRAM S: SDRAM T: DDR SDRAM II U: GDDR4 SDRAM V: Mobile DDR SDRAM PEA X: Mobile DDR SDRAM Y: XDR DRAM Z: Value Added DRAM PEA: Power Efficient Address 4~5. Density, Refresh 111: 1G, 64K/16ms 15: 16M, 1K/16ms 16: 16M, 2K/32ms 17: 16M, 4K/64ms 26: 128M, 4K/32ms 27: 128M, 16K/32ms 28: 128M, 4K/64ms 32: 32M, 2K/32ms 40: 4M, 512/8ms 41: 4M, 1K/16ms 44: 144M, 16K/32ms 50: 512M, 32K/16ms 51: 512M, 8K/64ms 52: 512M, 8K/32ms 54: 256M, 16K/16ms 55: 256M, 4K/32ms 56: 256M, 8K/64ms 57: 256M, 16K/32ms 58: 256M, 8K/32ms 62: 64M, 2K/16ms 64: 64M, 4K/64ms 9. 8. X 3 X 4 X 5 X 6 X 7 X 8 X 9 X X 12 X 13 X 14 X 15 X 16 X 17 X 18 66: 64M, 8K/64ms 68: 768M, 8K/64ms 72: 72M, 8K/32ms 76: 576M, 32K/32ms 80: 8M, 2K/32ms 88: 288M, 16K/32ms 89: 288M, 8K/32ms 1G: 1G, 8K/64ms 2G: 2G, 8K/64ms 4G: 4G, 8K/64ms 2A: 128M, 4K/64ms with TCSR 5A: 256M, 8K/64ms with TCSR 6A: 64M, 4K/64ms with TCSR 6~7. Organization 01: x1 04: x4 02: x2 05: x4 (2CS) 03: x2 (Including x1) S: SSTL-2, 2.2V, 1.8V U: DRSL, 1.8V, 1.2V Y: SSTL(LP), 2.5V, 2.5V 10. Generation M: 1st Generation A: 2nd Generation B: 3rd Generation C: 4th Generation D: 5th Generation E: 6th Generation F: 7th Generation G: 8th Generation H: 9th Generation I: 10th Generation J: 11th Generation K: 12th Generation Y: Partial DRAM(2nd) Z: Partial DRAM (for RAMOSTAK Product) 15: x16 (2CS) 11. ---- 12. Package - Advanced DRAM Technology G: WBGA T: TSOP2 Z: BOC(LF) 2: 2Bank 5: 16Bank 3: 4Bank 6: 32Bank - DDR SDRAM J: TSOP2-400(LF, DDP) K: TSOP2-400(DDP) G: BOC, WBGA P: BOC(DDP) N: STSOP2 S: POP(DDP) - DDR SDRAM II G: BOC S: BOC(Smaller) R: WLP - DDR3 SDRAM G: BOC - DDR SGRAM E: FBGA(LF, DDP) J: FBGA(DDP) P: FBGA(LLDDP) N: FBGA(1DQS,LF) L: TSOP2-400(LF) Q: TQFP G : FBGA V: FBGA(LF) M: FBGA(1DQS) H: BOC T: TSOP2-400 U: TQFP(LF) Z: BOC(LF) Z: BOC(LF) Y: BOC(Smaller, LF) T: TSOP2-400 U: TSOP2-400(LF) Z: BOC(LF) Q: ISM V: STSOP2(LF) X: POP(LF, DDP) L: TSOP2-400F(LF)

K 2 X 3 X 4 X 5 X 6 X 7 X 8 X 9 X X 12 X 13 X 14 X 15 X 16 X 17 X 18 - EDO & FP (tRAC) 40: 40ns 50: 50ns - Direct RDRAM (tCC, tRAC) C6: 300MHz, 53.3ns w/ consumer PKG C8: 400MHz, 45ns w/ consumer PKG C9: 533MHz, 32ns w/ consumer PKG G6: 300MHz(3.3ns), 53.3ns K7: 356MHz(2.8ns), 45ns K8: 400MHz(2.5ns), 45ns M8: 400MHz(2.5ns), 40ns M9: 533MHz(1.9ns), 35ns N1: 600MHz(1.667ns), 32ns N9: 533MHz(1.9ns), 32ns P3: 667Mhz(1.5ns), 31ns R6: 800Mhz(1.25ns), 27ns S8: 400MHz, 45ns SC S9: 533MHz(1.9ns), 35ns SC T9: 533MHz(1.9ns), 32ns, tDAC 3 DS: Daisychain Sample *SC (Short channel) - Mobile SDRAM 15: 15ns@CL2 1L: 10ns@CL3 80: 8ns@CL3 90: 9.0ns@CL3(12ns@CL2) 95: 9.5ns@CL3(12ns@CL2) DP: Daisychain (PCB) DS: Daisychain Sample DY: Daisychain (Sanyo PCB) - Mobile SDRAM PEA 1L: 10ns@CL3 75: 7.5ns@CL3 90: 9.0ns@CL3(12ns@CL2) - Mobile DDR SDRAM C0: 15ns@CL3 C3: 7.5ns@CL3 CA: 9ns@CL3 DP: Daisychain (PCB) DS: Daisychain DY: Daisychain (Sanyo PCB) C2: 10ns@CL3 C6: 6ns@CL3 60: 6ns@CL3 1H: 10ns@CL2 75: 7.5ns@CL3 45: 45ns 60: 60ns - Mobile DDR SDRAM PEA C3: 7.5ns@CL3 CA: 9ns@CL3 - Mobile L2RAM L0: 100Mhz, CL3 L2: 166Mhz, CL4 - SDRAM (tCC: Default CL3) 10: 10ns, PC66 15: 15ns 1H: 10ns@CL2, PC100 33: 3.3ns 45: 4.5ns 55: 5.5ns 60: 6ns 70: 7ns 75: 7.5ns, PC133 7B: 7.5ns PC133, CL3, TRCD2, TRP2 7C: 7.5ns PC133, CL2, TRCD2, TRP2 80: 8ns 96: 9.6ns DP: Daisychain (PCB) DY: Daisychain (Sanyo PCB) < Only SDRAM TPB Code > S0: 7.0ns BIN U0: 6.0ns BIN W0: 8.0ns BIN 20: 2.0ns 22: 2.2ns(450MHz) 30: 3ns 35: 3.5ns 3N 3.32ns(301MHz) 45: 4.5ns 55: 5.5ns 70: 7ns 2B: 2.94ns(340MHz) 5A: 5ns@CL3(TRCD3, TRP3) < Only SDRAM TPB Code> S0: 4.0ns BIN - DDR SGRAM II 12: 1.25ns 15: 1.5ns (667MHz) 18: 1.818ns 2A: 2.86ns(350MHz) 22: 2.2ns 30: 3.0ns 37: 3.75ns 14: 1.429ns 16: 1.667ns 1K: 1.996ns 20: 2ns 25: 2.5ns 33: 3.3ns
NOTES: 1) gBGA packages are registered trademarks of Tessera. 2) (M): Mirror 3) (LF): Lead Free
- GDDR3 SDRAM C6: 6ns@CL3 11: 1.1ns 14: 1.429ns 16: 1.667ns L1: 133Mhz, CL3 20: 2.0ns 25: 2.5ns 33: 3.3ns 12: 12ns 1L: 10ns, PC100 40: 4ns 50: 5ns 56: 5.6ns 67: 6.7ns 74: 7.4ns 40: 4.0ns 2A: 2.86ns - GDDR4 SDRAM 15: 1.5ns(667MHz) 12: 1.25ns 15: 1.5ns(667MHz) 18: 1.818ns 22: 2.2ns 30: 3.0ns 36: 3.6ns 1A: 1.0ns

XDR DRAM

A2: 2.4Gbps, 36ns, 16Cycles A3: 3.2Gbps, 27ns, 16Cycles B3: 3.2Gbps, 35ns, 20Cycles B4: 4.0Gbps, 28ns, 20Cycles C3: 3.2Gbps, 35ns, 24Cycles C4: 4.0Gbps, 28ns, 24Cycles DS: Daisychain Sample DRAM COMMON 00: NONE 16. Packing Type (16 digit)

90: 9ns DS: Daisychain

T0: 5.5ns BIN V0: 7.5ns BIN G0: 5.6ns BIN 21: 2.1ns(475MHz) 25: 2.5ns 33: 3.3ns 36: 3.6ns 40: 4ns 50: 5ns 60: 6ns 2A: 2.86ns(350MHz) 2C: 2.66ns(375MHz)
Common to all products, except of Mask ROM Divided into TAPE & REEL(In Mask ROM, divided into TRAY, AMMO Packing Separately) Type Packing Type New Marking T 0 (Number) S Y A P M
- DDR SGRAM (tCC: Default CL3) Component TAPE & REEL Other (Tray, Tube, Jar) Stack Component TRAY (Mask ROM) AMMO PACKING Module MODULE TAPE & REEL MODULE Other Packing

NAND Flash

NAND FLASH DISCRETE COMPONENTS
Density SLC NAND 256Mb 256Mb 512Mb 512Mb 1Gb 1Gb 2Gb 2Gb 4Gb 8Gb 16Gb 32Gb MLC NAND 8Gb 16Gb 32Gb 64Gb Part Number K9F5608x0D-PCB K9F5608x0D-JIB K9F1208x0C-PCB K9F1208x0C-JIB K9F1G08U0B-PCB K9F1G08R0B-JIB K9F2G08U0A-PCB K9F2G08R0A-JIB K9F4G08U0A-PCB K9K8G08U0A-PCB K9WAG08U1A-PCB K9NBG08U5A-PCB K9G8G08U0M-PCB K9LAG08U0M-PCB K9HBG08U1M-PCB K9MCG08U5M-PCB Organization x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 Voltage(V) 1.8V; 3.3V 1.8V; 3.3V 1.8V; 3.3V 1.8V; 3.3V 3.3V 1.8V 3.3V 1.8V 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V Package TSOP48 BGA63 TSOP48 BGA63 TSOP48 BGA63 TSOP48 BGA63 TSOP48 TSOP48 TSOP48 TSOP48 TSOP48 TSOP48 TSOP48 TSOP48 Comments
DDP QDP DSP mono; moving to A-die DDP QDP DSP
Product charts for flash fusion memory products OneNAND, moviNAND and Flex-OneNAND are located on page 23.
NAND Flash Ordering Information
NAND FLASH ORDERING INFORMATION
K 1 1. Memory (K) 2. NAND Flash: 9 3. Small Classification (SLC: Single Level Cell, MLC: Multi Level Cell, SM: SmartMedia, S/B: Small Block) A: SLC + Muxed I/F Chip B: Muxed I/F Chip S: SLC Single SM D: SLC Dual SM Q: 4CHIP SM T: SLC SINGLE (S/B) E: SLC DUAL (S/B) R: SLC 4DIE STACK (S/B) F: SLC Normal G: MLC Normal K: SLC 2-Die Stack W: SLC 4-Die Stack J: Non-Muxed OneNAND U: 2 STACK MSP V: 4 STACK MSP 4~5. Density 12: 512M 28: 128M 40: 4M 64: 64M 1G: 1G 4G: 4G 00: NONE 6~7. Organization 00: NONE 16: x16 08: x8 16: 16M 32: 32M 56: 256M 80: 8M 2G: 2G 8G: 8G X 3 X 4 X 5 X 6 X 7 8. Vcc C: 5.0V(4.5V~5.5V) D: 2.65V(2.4V~2.9V) E: 2.3V~3.6V Q: 1.8V(1.7V~1.95V) T: 2.4V~3.0V U: 2.7V~3.6V V: 3.3V(3.0V~3.6V) W: 2.7V~5.5V,3.0V~5.5V 0: NONE 9. Mode O: Normal 1: Dual nCE & Dual Rn/B 4: Quad nCE & Single RnB A: Mask Option 1 10. Generation M: 1st Generation A: 2nd Generation B: 3rd Generation C: 4th Generation D: 5th Generation Y: Partial NAND(2nd) Z: Partial NAND(1st) M: 1st Generation A: 2nd Generation B: 3rd Generation C: 4th Generation D: 5th Generation Y: Partial NAND(2nd) Z: Partial NAND(1st) 11. -- 12. Package A: COB C: CHIP BIZ E: TSOP1(LF,1217) G: FBGA J: FBGA(LF) L: LGA P: TSOP1(LF) R: TSOP2-R T: TSOP2 W: WAFER B: TBGA D: 63-TBGA F: WSOP1(LF) H: TBGA(LF) K: TSOP1(1217) M: tLGA Q: TSOP2(LF) S: SMARTMEDIA V: WSOP Y: TSOP1 X 8 X 9 X X 12 X 13 X 14 X 15 X 16 X 17 X 18 13. Temp C: Commercial 0: NONE 14. Bad Block B: Include Bad Block D: Daisychain Sample L: 1~5 Bad Block N: Ini. All Good, Add. 10 Blocks S: All Good Block 0: NONE 15. NAND-Reserved 0: Reserved 16. Packing Type (16 digit) Common to all products, except of Mask ROM Divided into TAPE & REEL(In Mask ROM, divided into TRAY, AMMO Packing Separately) Type Packing Type New Marking T 0 (Number) S Y A P M I: Industrial

Comments 2E1D 2E1D 2E1D 2E1D -
2E1D = 2-cycle Enable and 1-cycle Disable 2E2D = 2-cycle Enable and 2-cycle Disable
Recommended speed options for SPB are 250MHz and 167MHz Recommended access speed option for SB is 6.5ns
SPB & FT (4Mbit) SRAM
Part Number K7A403600B K7A401800B K7A403609B K7A401809B K7A403200B K7B403625B K7B401825B
Organization 128Kx36 256Kx18 128Kx36 256Kx18 128Kx32 128Kx36 256Kx18
Operating Mode SPB SPB SPB SPB SPB SB SB
Vdd (V) 3.3 3.3 3.3 3.3 3.3 3.3 3.3
Access Time tCD(ns) 3.5 3.5 2.4 2.4 3.5 6.5 6.5

Speed tCYC (MHz) 133

I/O Voltage (V) 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5
Package 100TQFP (LF only) 100TQFP (LF only) 100TQFP (LF only) 100TQFP (LF only) 100TQFP (LF only) 100TQFP (LF only) 100TQFP (LF only)
Status Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs
Comments 2E1D 2E1D 2E1D 2E1D 2E1D

NtRAM (72Mbit) SRAM

Part Operating Number Organization Mode Vdd (V) K7N643645M 2Mx36 SPB 2.5 K7N641845M 4Mx18 SPB 2.5
Access Time tCD(ns) 2.6, 3.5 2.6, 3.5
Speed tCYC (MHz) 250, 167 250, 167

I/O Voltage (V) 2.5 2.5

Package 100TQFP, 165FBGA 100TQFP, 165FBGA

All packages are Pb-free

Comments
250MHz could cover 200MHz speed option / 167MHz could cover 133MHz speed option

NtRAM (36Mbit) SRAM

Part Number K7N323635C K7N321835C K7M323631C K7M321831C
Operating Mode SPB SPB FT FT
Access Time tCD(ns) 2.6, 3.5 2.6, 3.5 7.5 7.5
Speed tCYC (MHz) 250, 167 250, 118
Package 100TQFP, 165FBGA 100TQFP, 165FBGA 100TQFP 100TQFP
Recommended speed options for SPB are 250MHz and 167MHz 250MHz could cover 200MHz speed option / 167MHz could cover 133MHz speed option
Recommended access speed option for SB is 7.5ns

NtRAM (18Mbit) SRAM

Part Number K7N161831B K7N163631B K7M161835B K7M163635B
Organization 1Mx18 512Kx36 1Mx18 512Kx36
Operating Mode SPB SPB FT(SB) FT(SB)
Vdd (V) 3.3, 2.5 3.3, 2.5 3.3 3.3
Access Time tCD(ns) 2.6, 3.5 2.6, 3.5 6.5 6.5
Speed tCYC (MHz) 250, 167 250, 133
Package Status "100TQFP, 165FBGA" "100TQFP, 165FBGA" 100TQFP 100TQFP
250MHz could cover 200MHz speed option / 167MHz could cover 133MHz speed option / 6.5ns could cover 7.5ns speed option All packages are Pb-free

NtRAM (8Mbit) SRAM

Part Number K7P401822B K7P401823B K7P403622B Organization 256Kx18 256Kx18 128Kx36 Operating Mode SP SP SP Vdd (V) 3.3 3.3 3.3 Access Time tCD(ns) 2.5,2.7,3.0 6.5 2.5,2.7,3.0 Speed tCYC (MHz) 250,200,250,200,167 I/O Voltage (V) 2.5/3.3 2.5/3.3 2.5/3.3 Package 119BGA 119BGA 119BGA Status Not for new designs Not for new designs Not for new designs

DDR (8Mbit) SRAM

Part Number K7D803671B K7D801871B Organization 256Kx36 512Kx18 Vdd (V) 2.5 2.5 Access Time tCD (ns) 1.7/1.9/2.1 1.7/1.9/2.1 Cycle Time (MHz) 333, 330, 250 333, 330, 250 I/O Voltage (V) 1.5(Max 2.0) 1.5(Max 2.0) Package 153BGA 153BGA Status Not for new designs Not for new designs

DDR (16Mbit) SRAM

Part Number K7D161874B K7D163674B Organization 1Mx18 512Kx36 Vdd (V) 1.8~2.5 1.8~2.5 Access Time tCD (ns) 2.3 2.3 Cycle Time (MHz) 330, 300 330, 300 I/O Voltage (V) 1.5~1.9 1.5~1.9 Package 153BGA 153BGA Status

DDR (32Mbit) SRAM

Part Number K7D321874A K7D323674A K7D321874C K7D323674C Organization 2Mx18 1Mx36 2Mx18 1Mx36 Vdd (V) 1.8~2.5 1.8~2.5 1.8~2.5 1.8~2.5 Access Time tCD (ns) 2.0 2.0 2.0 2.0 Cycle Time (MHz) 400, 375, 333 400, 375, 333 400, 375, 333 400, 375, 333 I/O Voltage (V) 1.5~1.8 1.5~1.8 1.5~1.8 1.5~1.8 Package 153BGA 153BGA 153BGA 153BGA Status EOL in June`07 EOL in June`07
DDR II CIO/SIO (18Mbit) SRAM
Part Number K7I161882B K7I161884B K7J161882B K7J163682B K7I163682B K7I163684B

NOTES: 2B = Burst of 2

Organization 1Mx18 1Mx18 1Mx18 512Kx36 512Kx36 512Kx36
Vdd (V) 1.8 1.8 1.8 1.8 1.8 1.8
Access Time tCD (ns) 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50

4B = Burst of 4

Cycle Time (MHz) 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167
I/O Voltage (V) 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8
Package 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA
Comments CIO-2B CIO-4B SIO-2B SIO-2B CIO-2B CIO-4B

Package 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA
Comments QDR II - 2B QDR II - 2B QDR II - 4B QDR I - 2B QDR I - 4B QDR II - 2B QDR II - 4B QDR I - 2B QDR I - 4B

QDR II (36Mbit) SRAM

Part Number K7R320982C K7R321882C K7R321884C K7R323682C K7R323684C
Organization 4Mx9 2Mx18 2Mx18 1Mx36 1Mx36
Vdd (V) 1.8 1.8 1.8 1.8 1.8
Access Time tCD (ns) 0.45 0.45 0.45 0.45 0.45
Cycle Time (MHz) 300, 250, 200 300, 250, 200 333, 300, 250 300, 250, 200 333, 300, 250
I/O Voltage (V) 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8
Package 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA
Comments QDR II-2B QDR II-2B QDR II-4B QDR II-2B QDR II-4B
2B = Burst of 2 4B = Burst of 4 C-die will support high-speed bins only 300, 250, 200MHz, which can cover slow-speed bin (167MHz) using stable DLL circuit.

QDR II (72Mbit) SRAM

Part Number K7R640982M K7R641882M K7R641884M K7R643682M K7R643684M
Organization 8Mx9 4Mx18 4Mx18 2Mx36 2Mx36
Access Time tCD (ns) 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.45,0.50
2B = Burst of 2 4B = Burst of 4 The recommended speed bins are 250MHz, 200MHz for 2B part, 300MHz, 250MHz for 4B part.

QDR II+ (18Mbit) SRAM

Part Number K7S1618T4C K7S1636T4C
Comments QDR II + 4B QDR II + 4B

QDR II+ (36Mbit) SRAM

Part Number K7S3218T4C K7S3236T4C

Organization 1Mx36 2Mx18

Synchronous SRAM Ordering Information
SYNCHRONOUS SRAM ORDERING INFORMATION
K 1 1. Memory (K) 2. Sync SRAM: 7 3. Small Classification A: Sync Pipelined Burst B: Sync Burst C: Custom Product D: Double Data Rate I: Double Data Rate II, Common I/O J: Double Data Rate, Separate I/O K: Double Data II+, Common I/O L: Late Select M: Sync Burst + NtRAM N: Sync Pipelined Burst + NtRAM P: Sync Pipe Q: Quad Data Rate I R: Quad Data Rate II S: Quad Data Rate II+ 4~5. Density 10: 1M 20: 2M 40: 4M 64: 72M 6~7. Organization 08: x8 18: x18 36: x36 72: x72 8~9. Vcc, Interface, Mode 00: 3.3V,LVTTL,2E1D WIDE 01: 3.3V,LVTTL,2E2D WIDE 08: 3.3V,LVTTL,2E2D Hi SPEED 09: 3.3V,LVTTL,Hi SPEED 11: 3.3V,HSTL,R-R 12: 3.3V,HSTL,R-L 14: 3.3V,HSTL,R-R Fixed ZQ 22: 3.3V,LVTTL,R-R 23: 3.3V,LVTTL,R-L 25: 3.3V,LVTTL,SB-FT WIDE 30: 1.8/2.5/3.3V,LVTTL,2E1D 31: 1.8/2.5/3.3V,LVTTL,2E2D 35: 1.8/2.5/3.3V,LVTTL,SB-FT 44: 2.5V,LVTTL,2E1D 45: 2.5V,LVTTL,2E2D 49: 2.5V,LVTTL,Hi SPEED 52: 2.5V,1.5/1.8V,HSTL,Burst2 54: 2.5V,1.5/1.8V,HSTL,Burst4 09: x9 32: x32 44: x144 80: 8M 16: 18M 32: 36M 44: 144M 10. Generation M: 1st Generation A: 2nd Generation B: 3rd Generation C: 4th Generation D: 5th Generation Z: TEMPORARY CODE 11. -- 12. Package H: BGA,FCBGA,PBGA G: BGA, FCBGA, FBGA (LF) F: FBGA E: FBGA (LF) Q: (L)QPF P: (L)QFP(LF) C: CHIP BIZ W: WAFER 13. Temp, Power - COMMON (Temp,Power) 0: NONE,NONE (Containing of Error handling code) A: Automotive,Normal B: Commercial,Low Low C: Commercial,Normal E: Extended,Normal I: Industrial,Normal - WAFER, CHIP BIZ Level Division 0: NONE,NONE X 3 X 4 X 5 X 6 X 7 X 8 X 9 X X 12 X 13 X 14 X 15 X 16 X 17 X 18 62: 2.5V/1.8V,HSTL,Burst2 64: 2.5V/1.8V,HSTL,Burst4 66: 2.5V,HSTL,R-R 70: 2.5V,HSTL,4-1-1-1 71: 2.5V,HSTL,3-1-1-1 73: 1.5V,1.8V,HSTL,All 74: 1.8V,2.5V,HSTL,All 80: 1.8V,LVCMOS,2E1D 82: 1.8V,HSTL,Burst2 84: 1.8V,HSTL,Burst4 85: 1.8V,LVCMOS,2E2D,Hi SPEED 88: 1.8V,HSTL,R-R 91: 1.5V,HSTL,All 95: 1.0V,HSTL,All T2: 1.8V,2Clock Latency,Burst2 T4: 1.8V,2Clock Latency,Burst4 U2: 1.8V,2.5Clock Latency,Burst2 U4: 1.8V,2.5Clock Latency,Burst4 14~15. Speed - Sync Burst,Sync Burst + NtRAM & < Mode is R-L >(Clock Accesss Time) 10: 10ns(Sync Burst, Sync Burst + NtRAM) 38: 3.8ns 43: 4.3ns 48: 4.8ns 50: 5ns(Only Sync Pipe) 55: 5.5ns 60: 6ns 65: 6.5ns 67: 6.7ns 70: 7ns 75: 7.5ns 80: 8ns 85: 8.5ns 90: 9ns - Other Small Classification (Clock Cycle Time) 10: 100MHz 11: 117MHz 13: 133MHz 14: 138MHz 15: 150MHz 16: 166MHz 17: 175MHz 18: 183MHz 19: 143MHz 20: 200MHz 21: 200MHz(2.0ns) 22: 225MHz 25: 250MHz 26: 250MHz(1.75ns) 27: 275MHz 30: 300MHz 33: 333MHz 35: 350MHz 36: 366MHz(t-CYCLE) 37: 375MHz 40: 400MHz(t-CYCLE) 42: 425MHz 45: 450MHz 50: 500MHz(except Sync Pipe) 6A: 600MHz 6F: 650Mhz(Only CSRAM) 7F: 750MHz 16. Packing Type (16 digit) - Common to all products, except of Mask ROM - Divided into TAPE & REEL(In Mask ROM, divided into TRAY, AMMO Packing Separately) Type Packing Type New Marking T 0 (Number) S Y A P M

1: Hot DC sort

2: Hot DC, selected AC sort

MCP: NAND/DRAM

DENSITY FLASH DRAM Memory Combination FLASH VCC (V) DRAM ORGANIZATION FLASH DRAM Part No. Size PACKAGE INFORMATION Type

256Mb 256Mb 256Mb 512Mb

256Mb 512Mb 1Gb 256Mb
ND256256 ND256512 NDD256512512 ND512256

512Mb 512Mb ND512512

1Gb 1Gb
256Mb ND1G256 512Mb ND1G512

1Gb 2Gb

NDD1G512512
512Mb NND1G1G512 ND2G512 NDD2G512512 ND2G1G
1.8V 3.0V 3.0V 1.8V 2.7V 1.8V 2.65V 1.8V 1.8V 1.8V 1.8V(L) 1.8V(L) 1.8V(L) 1.8V(L) 1.8V(L) 1.8V(L) 1.8V(L) 1.8V(L) 1.8V(L) 1.8V 1.8V 1.8V
1.8V 2.5V 2.5V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V 1.8V(D) 1.8V(D) 1.8V 1.8V 2.65V 1.8V 1.8V 1.8V
x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8
x16 x32 x16 x16 x16 x16 x32 x16 x32 x32 x16 x32 x16 x32 x32 x32 x16 x32(D) x16 x16 x32 x32
K5D5657ACC-D090000 K5D5613HCA-D075000 KAL005005M-DGYY000 K5D1257ACC-D090000 K5D12571CM-D090000 K5E1257ACM-D075000 K5D1258DCA-A090000 K5D12121CM-D090000 K5D12131CM-D090000 K5D1213ACE-D090000 K5D1G572CM-D075000 K5E1G58ACM-D060000 K5D1G12ACD-D075000 TBD K5E1G131CA-D075000 KAL00X001M-AJYY000 KAL00X00VM-DJYY000 KAG001002A-DJJY000 KAG006003B-DJJ5000 K5E2G12ACM-D075000 KAL009001M-D1YY000 K5E2G1GACM-D060000
10.5x13x1.4 10.5x13x1.2 10.5X13X1.4 10.5x13x1.2 10.5x13x1.4 10.5x13x1.2 10.5x13x1.2 10.5x13x1.4 10.5x13x1.4 10.5x13x1.2 10.5x13x1.2 10.5x13x1.2 10.5x13x1.4 10.5x13x1.2 10.5x13x1.4 11.5x13x1.4 10.5x13x1.4 11.5x13x1.4 10.5x13x1.4 12.0x14x1.4 12x14x1.4 12x14x1.2
107FBGA 137FBGA 137FBGA 107FBGA 107FBGA 107FBGA 137FBGA 107FBGA 137FBGA 137FBGA 107FBGA 107FBGA 107FBGA 137FBGA 137FBGA 137FBGA 137FBGA 137FBGA 137FBGA 107FBGA 137FBGA 137FBGA
1. N = NAND, D= DRAM memory combination indicates the type, density, and number of die stacks in the MCP. (Ex. NDD256256256 = 256Mb NAND + 256Mb DRAM + 256Mb DRAM). 2. When ordering Tape and Reel, please indicate by the letter "T" on the 3rd to last field in the part number. (Ex. K5D5629ACC-D090T00) 3. (D) Denotes DDR SDRAM packaged in MCP 4. (L) Denotes Large Block NAND packaged in MCP

MCP: NOR/DRAM

DENSITY Memory FLASH SRAM Combination FLASH VCC (V) SRAM FLASH DRAM BOOT ORGANIZATION NOR OPR. Part No. PACKAGE INFORMATION Size Type

64Mb 64Mb 512Mb 512Mb

256Mb 512Mb 256Mb 512Mb
RD64256 RD64512 RRD512256 RRD256256512

3.0V 3.0V 1.8V 1.8V

1.8V 1.8V 1.8V 1.8V

x16 x16 x16 x16

x32 x32(D) x16(D) x16

TOP TOP TOP T+B

Async. No Page Async. No Page Sync MLC Sync
K5H6358LTM-D7750CD K5Y6313LTM-D790000 KAS35000AM-S44Y000 KAS280003M-DUU5000
10x11x0.8 10.5x12x1.4 11x10x1.3 11.5x13x1.4
145FBGA 151FBGA 133FBGA 167FBGA
1. R= NOR, D= DRAM Memory combination indicates the type, density, and number of die stacks in the MCP. (Ex. RDD32128128 = 32Mb NOR + 128Mb DRAM + 128Mb DRAM). 2. When ordering Tape and Reel, please indicate by the letter "T" on the 3rd to last field in the part number. (Ex. K5H6358ETA-D775T00) 3. All NOR Flash have demuxed Add/Data lines
MCP: MOST COMMONLY USED MCP CONFIGURATIONS
Memory NAND & DRAM NAND Density 256Mb 256Mb 256Mb 512Mb 512Mb 1Gb 1Gb 2Gb 2Gb 64Mb 128Mb 128Mb 256Mb 256Mb 256Mb 512Mb 1Gb 1Gb DRAM Density/Organization 128Mb (x16) 256Mb (x16) 512Mb (x32) 256Mb (x16/x32) 512Mb (x16/x32) 256Mb (x16) 512Mb (x16/x32) 512Mb (x16/x32) 1Gb (x32) 32Mb 32Mb 64Mb 64Mb 128Mb 256Mb (x32) 512Mb (x16/x32) 512Mb (x16/x32) 1Gb (x16/x32) Voltage (NAND-DRAM) 1.8V - 1.8V 2.65V - 1.8/1.8V 3V - 3/2.5V 2.65/1.8V - 1.8V 2.65/1.8V - 1.8V 2.65V - 1.8V 3.0/2.65/1.8V - 3.0/2.65/1.8V 3.0/2.65/1.8V - 3.0/2.65/1.8V 2.65/1.8V - 1.8V 3.0V - 3.0V 3.0/1.8V - 3.0/1.8V 3.0/1.8V - 3.0/1.8V 3.0V - 3.0V 3.0V - 3.0V 3.3V - 3.3/1.8V 1.8V-1.8V 1.8V-1.8V 1.8V-1.8V Package 107FBGA 107FBGA 137FBGA 107FBGA/137FBGA 107FBGA/137FBGA 107FBGA 137/107FBGA 137/107FBGA 137FBGA 69FBGA 56FBGA/64FBGA 64FBGA 84FBGA 84FBGA 188FBGA/167FBGA 167FBGA/202FBGA 167FBGA/202FBGA 202FBGA

NOR & UtRAM

OneNAND & DRAM
This list represents the most commonly used MCPs; more options are available. All NAND organization is x8; all NOR and UtRAM organization is x16 each.

Fusion Memory

FLASH: OneNAND
OneNAND is a monolothic IC that combines a NAND flash array with a NOR flash interface plus an SRAM buffer. Its ideal for high-performance, high-density applications. Density 256Mb 256Mb 256Mb 256Mb 256Mb 512Mb 512Mb 512Mb 512Mb 1Gb 2Gb 4Gb
Org X16 X16 X16 X16 X16 X16 X16 X16 X16 X16 X16 X16

All parts are lead free

Speed (MHz) 54Mhz 54Mhz 66MHz 54MHz 66MHZ 54MHz 66MHz 54MHZ 66MHz 83Mhz 83Mhz 83Mhz
Voltage(V) 3.3 1.8 1.8 3.3 3.3 1.8 1.8 3.3 3.3 1.8 1.8 1.8
Part Number KFG5616U1A-PIB5000 KFG5616Q1A-DEB5000 KFG5616Q1A-DEB6000 KFG5616U1A-DIB5000 KFG5616U1A-DIB6000 KFG1216Q2B-DEB5000 KFG1216Q2B-DEB6000 KFG1216U2B-DIB5000 KFG1216U2B-DIB6000 KFG1G16Q2B-DEB8000 KFG2G16Q2M-DEB8000 KFH4G16Q2M-DEB8000
Package 48TSOP (12x20) 67 FBGA 67 FBGA FBGA (7x9) FBGA (7x9) 63 FBGA 63 FBGA FBGA (9.5x12) FBGA (9.5x12) 63 FBGA(10x13) 63 FBGA (11x13) 63 FBGA (10x13)

Temperature Industrial Extended Extended Industrial Industrial Extended Extended Industrial Industrial Extended Extended Extended
For ordering information, refer to page 11.

FLASH: moviNAND

Combining high-density MLC NAND flash with an MMC controller in a single chip that has an MMC interface, moviNAND delivers dense, cost-effective storage for embedded applications. Density 512MB 1GB 2GB 2GB 2GB 4GB 4GB 4GB 8GB
Org x8 x8 x8 x8 x8 x8 x8 x8 x8

All parts are lead free.

Speed (MHz) 52MHz 52MHz 52MHz 52MHz 52MHz 52MHz 52MHz 52MHz 52MHz
Voltage(V) 1.8/3.3 1.8/3.3 1.8/3.3 1.8/3.3 1.8/3.3 1.8/3.3 1.8/3.3 1.8/3.3 1.8/3.3
Part Number KMAIN0000A-S998000 KMAFN0000M-S998000 KMBDN0000M-S998000 KMBDE0000A-S998000 KMAKE0000M-B998000 KMCEN0000M-S998000 KMCEE0000A-S998000 KMBLE0000M-B998000 KMCME0000M-B998000
Package 153FBGA 169FBGA 169FBGA 153FBGA 169FBGA 169FBGA 153FBGA 169FBGA 169FBGA
Package Size 11.5x13x1.3t 12.0x18x1.2t 12.0x18x1.2t 11.5x13x1.3t 12.0x18x1.2t 12.0x18x1.2t 11.5x13x1.3t 12.0x18x1.2t 12.0x18x1.3t

FLASH: FLEX-OneNAND

A monolithic IC with a NAND flash array using a NOR flash interface, Flex-OneNAND enables partitioning into SLC and MLC areas so the chip can be configured for storage or high-speed access. Density 4Gb 8Gb 16Gb

Org x16 x16 x16

Speed (MHz)

Voltage(V)

Part Number

Package DDP DDP QDP

Comments ES ES ES

DRAM: OneDRAM

OneDRAM is a dual-port, low power DRAM with an SRAM buffer interface and is optimal for high-performance, high-density mobile applications. Density 512Mb

Org X16

Speed (MHz) 133MHz

Package

Comments Coming Second Half 2007

Hard Disk Drives

3.5" HARD DISK DRIVES
Family T1665 Capacity (GB) 80 RPM 7200 Interface SATA-2 SATA-2 SATA-2 SATA-2 SATA-2 SATA-2 SATA-2 PATA PATA SATA-2 SATA-2 SATA-2 SATA-2 SATA-2 SATA-2 SATA-2 SATA-2 PATA PATA SATA-2 SATA-2 SATA-2 PATA PATA PATA PATA PATA Buffer 2 Model HD500LJ HD501LJ HD320KJ HD321KJ HD400LI HD401LI HD300LI HD400LD HD300LD HD161HJ HD120HJ HD081GJ HD082GJ HD041GJ HD042GJ SP2504C SP2004C SP2514N SP2014N HD160JJ HD120IJ HD080HJ SP1644N SP1654N SP1243N SP1253N SP0842N

RoHS Compliant Horizontal or Vertical Drive Mounting Supported Drawer Type Tray Buffer Under Run Free

INTERNAL CD DRIVES

Drive Type Dimensions (WxHxD) Interface Buffer Memory Disc Capacity (Max) Seek Time (Ave) Data Transfer Rate (Max)
Internal CD-ROM Drives SH-C523A SH-C522C Internal Internal 148.2x42x184mm 148.2x42x184mm S-ATA EIDE / ATAPI 96KB 96KB CD-RW Type 80 700MB / CD-R Type 90 800MB Up to 4.7GB Single Layer / 8.5GB Double Layer CD: 90ms CD: 90ms Media Type Activity MB/s Read Media Type Activity MB/s Read CD Read 7.8 52x CD Read 7.8 52x
S-ATA 1.5Gb/s PIO Mode 4 DMA Mode 2 16.6MB/s 16.6MB/s
CD-ROM Slim Drive SN-C242C Internal 128x12.7x129mm EIDE / ATAPI 96KB CD-RW Type 80 700MB / CD-R Type 90 800MB CD: 130ms Media Type Activity MB/s Read CD Read 3.6 24x
PIO Mode 4 DMA Mode 2 Ultra DMS Mode 2 16.6MB/s 16.6MB/s 33.3MB/s

Supported Disks

CD-R / CD-RW / CD-DA / CD-ROM / CD-ROM/XA Video-CD / Photo CD / CD-I / CD-Extra / CD-Tex
DVD+R / DVD+RW / DVD-RAM / DCD-R DVD-ROM / DVD-Video / Video-CD / Photo CD CD-R / CD-RW / CD-DA / CD-ROM / CD-ROM/XA CD-I / CD-Extra / CD-Text / CD-I / CD-Extra / CD-Text
RoHS Compliant Horizontal or Vertical Drive Mounting Supported Motorized Tray
RoHS Compliant Horizontal or Vertical Drive Mounting Supported Motorized Tray Optional Ultra DMA Burst Transfer
RoHS Compliant Horizontal or Vertical Drive Mounting Supported Drawer Type Tray 80mm and 120mm CD Disc Diameter
Internal CD-RW Drive Drive Type Dimensions (WxHxD) Interface Buffer Memory Disc Capacity (Max) Seek Time (Ave) Data Transfer Rate (Max) SH-R522C Internal 148.2x42x184mm EIDE / ATAPI 2MB CD-RW Type 80 700MB / CD-R Type 90 800MB CD: 100ms Media Type Activity MB/s CD Record 7.8 CD Rewrite 4.8 CD Read 7.8 PIO Mode 4 16.6MB/s DMA Mode 2 16.6MB/s Ultra DMA Mode 2 33.3MB/s CD-R / CD-RW / CD-DA / CD-ROM / CD-ROM/XA Video-CD / Photo CD / CD-I / CD-Extra / CD-Text RoHS Compliant Horizontal or Vertical Drive Mounting Supported Motorized Tray Buffer Under Run Free Supports Mt. Rainier

Read 52x 32x 52x

Burst Transfer Rate

Supported Disks Other

Samsung offers the industrys broadest memory portfolio and has maintained its leadership in memory technology for 14 straight years. Its DRAM, flash and SRAM products are found in computers from ultra-mobile portables to powerful servers and in a wide range of handheld devices such as smartphones and MP3 players. Samsung also delivers the industrys widest line of storage products. These include optical and hard disk drives as well as flash storage, such as the all-flash Solid State Drive and a range of embedded and removable flash storage products.