Samsung Semiconductor, Inc.

Product Selection Guide

Memory and Storage January 2009
Samsung offers the industrys broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, ash and SRAM products are found in computersfrom ultra-mobile portables to powerful servers and in a wide range of handheld devices such as smartphones and MP3 players. Samsung also delivers the industrys widest line of storage products. These inlcude optical and hard disk drives as well as ash storage, such as the all-ash Solid State Drive and a range of embedded and removable ash storage products.
SAMSUNG PRODUCT OFFERINGS

Markets

Mobile/Wireless

TFT/LCD

ODD/HDD

Notebook PCs

Desktop PCs/Workstations
Servers Networking/ Communications Consumer Electronics

www.samsung.com/semi/us

www.samsung.com/semi/dram

Pages 4-14 D RAM

www.samsung.com/semi/flash

Pages 15-19 FLASH

www.samsung.com/semi/sram

Pages 20 -25 SRAM

MULTI-CHIP PACKAGE

www.samsung.com/semi/mcp

Pages 26-27

FUSION MEMORY

FUSION MEMORY www.samsung.com/semi/fusion
Page 28 F U S I ON Pages 29-33 ST OR A GE
Optical Disk Drives www.samsungodd.com

STORAGE

HaManufacturers repsr Solid State Drives www.samsungssd.com Optical Disk Drives www.samsungodd.com Hard Disk Drives www.samsung.com/hdd
DDR3 SDRAM REGISTERED MODULES
Density 1GB 2GB 2GB 4GB 4GB 8GB 1GB 2GB 2GB 4GB 4GB 8GB 8GB 16GB 1GB 2GB 1GB 1GB 2GB 4GB

NOTES:

Organization 128Mx72 256Mx72 256Mx72 512Mx72 512Mx72 1Gx72 128Mx72 256Mx72 256Mx72 512Mx72 512Mx72 1Gx72 1Gx72 2Gx72 128Mx64 256Mx64 128Mx64 128Mx64 256Mx64 512Mx64
F7= DDR3-800 (6-6-6) F8 = DDR3-1066 (7-7-7) H9 = DDR3-1333 (9-9-9) Voltage = 1.5V
Part Number M393B2873DZ1-C(F7/F8/H9) M393B5673DZ1-C(F7/F8/H9) M393B5670DZ1-C(F7/F8/H9) M393B5173DZ1-C(F7/F8) M393B5170DZ1-C(F7/F8/H9) M393B1G70DJ1-C(F7/F8) M393B2873EH1-C(F7/F8/H9) M393B5673EH1-C(F7/F8/H9) M393B5670EH1-C(F7/F8/H9) M393B5173EH1-C(F7/F8) M393B5170EH1-C(F7/F8/H9) M393B1G70EM1-C(F7/F8) M393B1K70BH1-C(F7/F8/H9) M393B2K70BM1-C(F7/F8) M471B2874DZ1-C(F7/F8/H9) M471B5673DZ1-C(F7/F8/H9) M471B2873EH1-C(F8/H9) M471B2874EH1-C(F8/H9) M471B5673EH1-C(F8/H9) M471B5273BH1-C(F8/H9)
Composition 1Gb (128M x8)*9 1Gb (128M x8)*18 1Gb (256M x4)*18 1Gb (128M x8)*36 1Gb (256M x4)*36 2Gb (512M x4)*36 1Gb (128M x8)*9 1Gb (128M x8)*18 1Gb (256M x8)*18 1Gb (128M x8)*36 1Gb (256M x4)*36 2Gb (512M x4)*36 2Gb (512M x4)*36 4Gb (1024M x4)*36 1Gb (64M x16)*8 1Gb (128M x8)*16 1Gb (128M x8)*8 1Gb (64M x16)*8 1Gb (128M x8)*16 2Gb (256M x8)*16
Compliance RoHS RoHS RoHS RoHS RoHS RoHS RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free RoHS RoHS RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free
Speed (Mbps) 800/1066/1333 800/1066/1333 800/1066/1333 800/1066 800/1066/1333 800/1066 800/1066/1333 800/1066/1333 800/1066/1333 800/1066 800/1066/1333 800/1066 800/1066/1333 800/1066 800/1066/1333 800/1066/1333 1066/1333 1066/1333 1066/1333 1066/1333

Banks 2 2

DDR3 SDRAM UNBUFFERED MODULES
Density 1GB 2GB 1GB 2GB 4GB Organization 128Mx64 256Mx64 128Mx64 256Mx64 512Mx64 Part Number M378B2873DZ1-C(F8/H9) M378B5673DZ1-C(F8/H9) M378B2873EH1-C(F8/H9) M378B5673EH1-C(F8/H9) M378B5273BH1-C(F8/H9) Composition 1Gb (128M x8)*8 1Gb (128M x8)*16 1Gb (128M x8)*8 1Gb (128M x8)*16 2Gb (256M x8)*16 Compliance RoHS RoHS RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free Speed (Mbps) 1066/1333 1066/1333 1066/1333 1066/1333 1066/1333 Module Ranks 2
DDR3 SDRAM UNBUFFERED MODULES (ECC)
Density 1GB 2GB 1GB 2GB 4GB Organization 128Mx72 256Mx72 128Mx72 256Mx72 512Mx72 Part Number M391B2873DZ1-C(F8/H9) M391B5673DZ1-C(F8/H9) M391B2873EH1-C(F8/H9) M391B5673EH1-C(F8/H9) M391B5273BH1-C(F8/H9) Composition 1Gb (128M x8)*9 1Gb (128M x8)*18 1Gb (128M x8)*9 1Gb (128M x8)*18 2Gb (256M x8)*18 Compliance RoHS RoHS RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free Speed (Mbps) 1066/1333 1066/1333 1066/1333 1066/1333 1066/1333 Module Ranks 2

JANUARY 2009

DDR3 SDRAM COMPONENTS
1Gb 1Gb 1Gb 1Gb 1Gb 1Gb 2Gb 2Gb 2Gb
256M x4 128M x8 64M x16 256M x4 128M x8 64M x16 512M x4 256M x8 128M x16
K4B1G0446D-HC(F7/F8/H9) K4B1G0846D-HC(F7/F8/H9) K4B1G1646D-HC(F7/F8/H9) K4B1G0446E-HC(F7/F8/H9) K4B1G0846E-HC(F7/F8/H9) K4B1G1646E-HC(F7/F8/H9) K4B2G0446B-HC(F7/F8/H9) K4B2G0846B-HC(F7/F8/H9) K4B2G1646B-HC(F7/F8/H9)
82 Ball -FBGA 82 Ball -FBGA 100 Ball -FBGA 78 Ball -FBGA 78 Ball -FBGA 96 Ball -FBGA 78 Ball -FBGA 78 Ball -FBGA 96 Ball -FBGA
RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free
800/1066/1333 800/1066/1333 800/1066/1333 800/1066/1333 800/1066/1333 800/1066/1333 800/1066/1333 800/1066/1333 800/1066/1333
9x11mm 9x11mm 9x13.3mm 7.5x11mm 7.5x11mm 7.5x13.3mm 9x11.5mm 9x11.5mm 9x13.3mm
DDR2 SDRAM REGISTERED MODULES
Module Density 512MB Organization 64Mx72 Part Number M393T6553GZA-C(E6/F7) M393T6553GZ3-C(CC/D5) M393T2950GZA-C(E6/F7) M393T2950GZ3-C(CC/D5) 1GB 128Mx72 M393T2953GZA-C(E6/F7) M393T2953GZ3-C(CC/D5) M393T2863QZA-C(E6/F7) M393T2863EHA-C(E6/F7/E7) M393T5750GZA-C(E6/F7) M393T5750GZ3-C(CC/D5) 2GB 256Mx72 M393T5660QZA-C(E6/F7/E7) M393T5660EHA-C(E6/F7/E7) M393T5663QZA-C(E6/F7/E7) M393T5663EHA-C(E6/F7/E7) 4GB 512Mx72 M393T5160QZA-C(E6/F7/E7) M393T5160EHA-C(E6/F7/E7) M393T1G60QJA-C(D5/E6) 8GB 1Gx72 M393T1G60EMA-C(D5/E6) M393T1K66AZA-C(E6/F7)
NOTES: CC=PC2-3200 (DDR2-400 @ CL=3) E6=PC2-5300 (DDR2-667 @ CL=5) F7=PC2-6400 (DDR2-800 @ CL=6) E7=PC2-6400 (DDR2-800 @ CL=5) D5=PC2-4200 (DDR2-533 @ CL=4) Voltage = 1.8V Module Height = 1.2"
Parity Speed (Mbps) 667/800 400/533 667/800 400/533 667/800 400/533 667/800 667/800 667/800 400/533 667/800 667/800 667/800 667/800 667/800 667/800 533/667 533/667 667/800 Register Y N Y N Y N Y Y Y N Y Y Y Y Y Y Y Y Y Rank 2 Production Now Now Now Now Now Now Now Jan`09 Now Now Now Jan`09 Now Jan`09 Now Jan`09 Now Jan`09 Now
Composition (64M x8)*9 (64M x8)*9 (128M x4)*18 (128M x4)*18 (64M x8)*18 (64M x8)*18 (128M x8)*9 (128M x8)*9 (128M x4)*36 (128M x4)*36 (256M x4)*18 (256M x4)*18 (128M x8)*18 (128M x8)*18 (256M x4)*36 (256M x4)*36 DDP (512M x4)*36 DDP (512M x4)*36 st. (1G x4)*18

Speed (Mbps) 667/800 667/800 667/800 667/800 667/800 667/800
Production Now Now Jan '09 Now Jan '09 Now

2GB 4GB

DDR2 SDRAM SODIMM MODULES
Module Density 512MB Organization 64Mx64 Part Number M470T6554GZ3-C(E6/F7/E7) M470T6464QZ3-C(E6/F7/E7) M470T2953GZ3-C(E6/F7/E7) 1GB 128Mx64 M470T2864QZ3-C(E6/F7/E7) M470T2864EH3-C(E6/F7/E7) 2GB 4GB
Composition (32M x16)*8 (64M x16)*4 (64M x8)*16 (64M x16)*8 (64M x16)*8 (128M x8)*8 (128M x8)*8 st.(512M x8)*8
M470T5663QZ3-C(E6/F7/E7) M470T5663EH3-C(E6/F7/E7) M470T5267AZ3-C(E6/F7)

Module

DDR2 SDRAM COMPONENTS
Density 256Mb Organization 16Mx16 128M x4 512Mb 64M x8 32M x16 256M x4 Part Number K4T56163QI-ZC(E6/F7/E7) K4T51043QG-HC(E6/F7/E7) K4T51083QG-HC(E6/F7/E7) K4T51163QG-HC(E6/F7/E7/F8) K4T1G044QQ-HC(E6/F7/E7) K4T1G044QE-HC(E6/F7/E7) K4T1G084QQ-HC(E6/F7/E7) K4T1G084QE-HC(E6/F7/E7) K4T1G164QQ-HC(E6/F7/E7) K4T1G164QE-HC(E6/F7/E7/F8) K4T2G044QA-HC(E6/F7/E7) K4T2G084QA-HC(E6/F7/E7) # Pins-Package 84-FBGA 60-FBGA 60-FBGA 84-FBGA 68-FBGA 68-FBGA 68-FBGA 68-FBGA 84-FBGA 84-FBGA 68-FBGA 68-FBGA Dimensions 9x13mm 10x11mm 10x11mm 11x13mm 11x18mm 11x18mm 11x18mm 11x18mm 11x18mm 11x18mm 11x18mm 11x18mm

Voltage = 1.8V

Package Lead free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free
Speed (Mbps) 667/800 667/800 667/800 667/800/1066 667/800 667/800 667/800 667/800 667/800 667/800/1066 667/800 667/800
Production Now Now Now Now Now Jan'09 Now Now Now Jan'09 Now Now

128M x8

64M x16 512Mx4 256Mx8
E6=DDR2-667 (5-5-5) F7=DDR2-800 (6-6-6)
E7=DDR2-800 (5-5-5) F8=DDR2-1066 (7-7-7)
DDR SDRAM 1U REGISTERED MODULES
Module Density 512Mb Organization 64Mx72 Part Number M312L6523FH3-CCC/B0 M312L2920FLS-CB0 1Gb 128Mx72 M312L2923FH3-CCC/B0 M312L2920FH3-CB3 2Gb
Composition (64M x8)*9 (128M x4)*18 (128M x8)*9 (128M x4)*18 (128M x4)*36
Compliance Lead-free Lead-free Lead-free Lead-free Lead-free

Type: 184-pin

Speed (Mbps) 333/400 333/400 333/400 333/400 333/400

256Mx72

M312L5720FH3-CB3
B0 = DDR266 (133MHz @ CL=2.5) A2 = DDR266 (133MHz @ Cl=2)
B3 = DDR333 (166MHz @ CL=2.5) CC = DDR400 (200MHz @ CL=3)
DDR SDRAM UNBUFFERED MODULES

Module Density 512Mb 1Gb

Organization 64MX64 128Mx64
Part Number M368L6523FLS-CCC/B3 M368L2923FLN-CCC/B3
Composition (64M x8)*8 (64M x8)*16
Compliance Lead-free & Halogen free Lead-free & Halogen free
Speed (Mbps) 333/400 333/400
Package: 66TSOP lead-free and halogen-free Voltage: 2.5V

DDR SDRAM SODIMM MODULES

Part Number M470L6524FL0-CB300 M470L2923F60-CB300
Composition (32M x16)*8 (64M x8)*16
Compliance Lead-free Lead-free

Speed (Mbps) 333 333

B0 = DDR266 (133MHz @ CL=2.5) CC = DDR400 (200MHz @ CL=3)
B3 = DDR333 (166MHz @ CL=2.5) A2 = DDR266 (133MHz @ Cl=2)

DDR SDRAM COMPONENTS

64Mx4 256Mb 32Mx8 16Mx16 128Mx4 512Mb K4H560438J-LCB3/B0 K4H560838J-LCCC/B3 K4H561638J-LCCC/B3 K4H510438F-LCB3/B0 K4H510438F-HCCC/B3 K4H510838F-LCCC/B3 K4H510838F-HCCC/B3 K4H511638F-LCCC/B3 K4H281638L-LCCC/CD 66-TSOP 66-TSOP 66-TSOP 66-TSOP 60-FBGA 66-TSOP 60-FBGA 66-TSOP 66-TSOP 266/333 333/400 333/400 266/333 333/400 333/400 333/400 333/400 400/500 Halogen -free Halogen -free Halogen -free Halogen -free Halogen -free Halogen -free Halogen -free Halogen -free Halogen -free

64Mx8 32Mx16

SDRAM COMPONENTS
Density 64Mb Organization 8Mx8 4Mx16 16Mx8 8Mx16 64Mx4 256Mb 32Mx8 16Mx16 128Mx4 512Mb 64Mx8 32Mx16
Part Number K4S640832N-UC(75)000 K4S641632N-UC(L)(75/60)000 K4S280832K-UC(L)(75)000 K4S281632K-UC(L)(75/60)000 K4S560432J-UC(L)(75)000 K4S560832J-UC(L)(75)000 K4S561632J-UC(L)(75/60)000 K4S510432D-UC(L)(75)000 K4S510832D-UC(L)(75)000 K4S511632D-UC(L)(75)000
# Pins - Package 54-TSOP 54-TSOP 54-TSOP 54-TSOP 54-TSOP 54-TSOP 54-TSOP 54-TSOP 54-TSOP 54-TSOP
Speed (Mbps) 133 133/143/133/133 133/133 133
Refresh 4K 4K 4K 4K 8K 8K 8K 8K 8K 8K
Remarks K-die changing to N-die K-die changing to N-die I-die changing to K-die I-die changing to K-die H-die changing to J-die H-die changing to J-die H-die changing to J-die
L = Commercial Temp., Low Power For industrial temperature, check with SSI Marketing Banks: 4
All products are lead free Voltage: 3.3V Speed: PC133 (133MHz CL=3/PC100 CL2)

RDRAM COMPONENTS

Density 288M

Organization x18

Voltage: 2.5 V All products are lead free
Part Number K4R881869I-DC(M8/T9)

Speed (Mbps) 800/1066

# Pins - Package 92-FBGA

Refresh 16K/32ms

GRAPHICS DRAM COMPONENTS
Type Density 512Mb 1Gb Organization 16Mx32 32Mx32 Part Number K4G52324FG K4G10324FE K4J10324QD 1Gb 32Mx32 K4J10324QD K4J10324QE K4J52324QH GDDR3 512Mb 16Mx32 K4J52324QH K4J52324QH K4J52324QH K4J52324QI K4J52324QI K4J52324QI K4W1G1646D gDDR3 1Gb 64Mx16 K4W1G1646D K4W1G1646E 1Gb gDDR2 512Mb 32Mx16 64Mx16 K4N1G164QQ K4N1G164QE K4N51163QG K4N51163QZ K4D263238K K4D263238K K4D261638K

Please contact your local Samsung sales representative for latest product offerings.
Note: All parts are lead free
Solid State Drives (SSD)*
Application Interface Size 1.8" SATA II SLC 3.0Gb/sec Connector Thin uSATA Den. 32GB 64GB 32GB 64GB 32GB 64GB 64GB 128GB 64GB 128GB 64GB 128GB 64GB 2.5" PM800 SLIM (caseless) SS410 SATA II 3.0Gb/sec SLC 2.5" uSATA Thin SATA 128GB 256GB 64GB 128GB 25GB 50GB 50GB 64GB 50GB 100GB 8GB UMPC/Low-Cost PC SATA II MLC UM410 HALF SLIM Thin SATA 16GB 32GB
*Please contact Marketing for the latest offerings.

Comp. 8Gb

Part Number MCBQE32G8MPP-0VA00 MCCOE64G8MPP-0VA00 MCBQE32G5MPP-0VA00 MCCOE64G5MPP-0VA00 MCBQE32GFMPP-MVA00 MCBQE64GFMPP-MVA00 MMCRE64G8MPP-0VA00 MMCQE28G8MUP-0VA00 MMCRE64G5MPP-0VA00 MMDOE28G5MPP-0VA00
2.5" SLIM (caseless) 1.8"

Thin SATA

Thin uSATA

16Gb 16Gb

PC/Notebook
2.5" SLIM (caseless)

SATA II MLC 3.0Gb/sec

MMCRE64GFMPP-MVA00 MMCQE28GFMPP-MVA00 MMCRE64G5MXP-0VB00
MMCRE28G5MXP-0VB00 MMDOE56G5MXP-0VB00
MMCRE64GFMXP-MVB00 MMCRE28GFMXP-MVB00 MCBQE25G5MPQ-0VA03 MCCOE50G5MPQ-0VA03 MCBQE32G5MPQ-0VA03 MCCOE64G5MPQ-0VA03 MCBQE50G5MXP-0VB03 MCCOE00G5MXP-0VB03 MMAGE08GSMPP-MVA00

Server/Storage

2.5"
MMBRE16GSMPP-MVA00 MMCRE32GSMPP-MVA00
SD and MicroSD FLASH CARDS
Flash Cards Type Density 1GB SD 2GB 4GB 8GB 16G MLC M-die Component Family 8Gb MLC B-die Ver. Controller SKYMEDI SKYMEDI SKYMEDI SKYMEDI SMI 512MB 4Gb MLC A-die SMI SMI 1GB MicroSD (without adapter) 2GB 8Gb MLC B-die SKYMEDI SKYMEDI SKYMEDI SKYMEDI SKYMEDI SKYMEDI SKYMEDI SKYMEDI Manuf. Site STS STS STS STS STS ATP SPIL SPIL STS SPIL STS STS SPIL STS STS Part Number MM8GF01GWBCA-2MA00 MMAGF02GWMCA-2NA00 MMAGF04GWMCA-2NA00 MMAGF08GWMCA-2NA00 MM4GR512UACA-2PA00 MM4GR512UACU-2PA00 MM4GR512UACY-2PA00 MM8GR01GUBCY-2MA00 MM8GR01GUBCA-2MA00 MM8GR02GUBCY-2MA00 MM8GR02GUBCA-2MA00 MMAGR02GUDCA-2MA00 MM8GR04GUBCY-2MA00 MMAGR04GUDCA-2MA00 MMAGR08GUDCA-2MA135 MOQ

8Gb MLC 16G MLC

B-die M-die B-die M-die M-die

4GB 8GB

8Gb MLC 16G MLC 16G MLC
Please contact your local Samsung sales representative for latest product offerings. Note: All parts are lead free.
FLASH PRODUCT ORDERING INFORMATION
SAMSUNG Memory NAND Flash Small Classication Density Density Organization Organization Vcc
Pre-Program Version Customer Bad Block Temp Package --Generation Mode
1. Memory (K) 2. NAND Flash : 9 3. Small Classification
(SLC : Single Level Cell, MLC : Multi Level Cell)

8. Vcc

A : 1.65V~3.6V B : 2.7V (2.5V~2.9V) C : 5.0V (4.5V~5.5V) D : 2.65V (2.4V~2.9V) E : 2.3V~3.6V R : 1.8V (1.65V~1.95V) Q : 1.8V (1.7V~1.95V) T : 2.4V~3.0V U : 2.7V~3.6V V : 3.3V (3.0V~3.6V) W : 2.7V~5.5V, 3.0V~5.5V 0 : NONE

256Kx16

512Kx8
SYNCHRONOUS PIPELINED BURST AND FLOW-THRU
Density Organization Part Number # PinsPackage 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP Operating Mode SPB SB SPB SB SPB SPB SB SPB SPB SB SPB SPB SB SPB SPB SB SPB SPB SB SPB SPB SPB SB Vdd (V) Access Time tCD (ns) 3.1 7.5 3.1 7.5 2.6, 3.5 3.1 7.5 2.6, 3.5 3.1 7.5 2.6 3.5 6.5 2.6 3.5 6.5 2.4 3.5 6.5 3.5 2.4 3.5 6.5 Speed tCYC (MHz) 250, 117 250, I/O Voltage (V) 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3,2.5 3.3,2.5 3.3,2.5 3.3,2.5 3.3,2.5 3.3,2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs 2E1D 2E1D 2E1D 2E1D 2E1D 2E1D 2E1D 2E1D 2E1D 2E1D 2E2D Comments

2Mx18 36Mb 1Mx36

K7A321830C K7B321835C K7A323630C K7B323635C K7A163630B
3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3
2E1D Ind Temp only 2E1D Ind Temp only 2E1D 2E2D

512Kx36 18Mb 1Mx18

K7A163631B K7B163635B K7A161830B K7A161831B K7B161835B K7A803609B

256x36 8Mb 512x18

K7A803600B K7B803625B K7A801809B K7A801800B K7B801825B K7A403609B

128Kx32 4Mb

K7A403600B K7B403625B K7A403200B K7A401809B

256Kx18

K7A401800B K7B401825B
All TQFP products are Lead Free 2E1D = 2-cycle Enable and 1-cycle Disable 2E2D = 2-cycle Enable and 2-cycle Disable SPB speed recommendations: For 200MHz use 250MHz; For 133MHz use 167MHz SB speed recommendation: Use 7.5ns Access Time use 6.5ns Access Time
Density Organization Part Number # PinsPackage 100-TQFP, 165FBGA 100-TQFP, 165FBGA 100-TQFP, 165FBGA 100-TQFP, 165FBGA 100-TQFP 100-TQFP 100-TQFP, 165FBGA 100-TQFP, 165FBGA 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP Operating Mode SPB SPB SPB SPB FT FT SPB SPB FT (SB) FT (SB) SPB SPB SPB SPB SPB SPB SPB SPB FT FT SPB SPB Vdd (V) Access Time tCD (ns) 2.6, 3.5 2.6, 3.5 2.6, 3.5 2.6, 3.5 7.5 7.5 2.6, 3.5 2.6, 3.5 6.5 6.5 3.5 3.5 2.6 2.6 3.5 3.5 2.6 2.6 6.5 6.5 3.0 3.0 Speed tCYC (MHz) 250, 167 250, 167 250, 167 250, 118 250, 167 250, 200 I/O Voltage (V) 2.5 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3,2.5 3.3,2.5 3.3,2.5 3.3,2.5 2.5 2.5 2.5 2.5 3.3, 2.5 3.3, 2.5 3.3,2.5 3.3,2.5 Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs

# PinsPackage 153-BGA 153-BGA 153-BGA 153-BGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA
Vdd (V) 1.8~2.5 1.8~2.5 2.5 2.5 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8
Access Time tCD (ns) 2.3 2.3 1.7/1.9/2.1 1.7/1.9/2.1 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45 0.45 0.45 0.45 0.45 0.45 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45 0.45 0.45 0.45
Cycle Time (MHz) 330, 300 330, 300 333, 330, 250 333, 330, 250 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 333,300,250 333,300,250 333,300,250 333,300,250 333,300,250 333,300,250 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 450, 400, 333 450, 400, 333 450, 400, 333 450, 400, 333
I/O Voltage (V) 1.5~1.9 1.5~1.9 1.5(Max 2.0) 1.5(Max 2.0) 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5 1.5 1.5 1.5
Production Status Mass Production Mass Production Not for new designs Not for new designs Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production

Comments

16Mb DDR 8Mb
CIO-2B CIO-4B SIO-2B CIO-2B CIO-4B SIO-2B CIO-2B CIO-4B SIO-2B CIO-2B CIO-4B SIO-2B
CIO-4B SIO-2B SIO-2B CIO-2B CIO-4B DDRII + CIO-2B DDRII + CIO-2B DDRII + CIO-2B DDRII + CIO-2B
2M x18 1M x36 1M x18 512K x36
K7K3218T2C K7K3236T2C K7K1618T2C K7K1636T2C
2B = Burst of 2 4B = Burst of 4 SIO = Separate I/O CIO = Common I/O For DDR II CIO/SIO: C-die use 330, 300, or 250MHz instad of 200MHz or 167MHz using a stable DLL circuit For DDR II+ CIO: 2-clock latency is available. A 2.5-clock latency can be supported on 18Mb at 500Mhz and 36Mb at 450MHz

CIO-2B

QDR SYNCHRONOUS SRAM
Type Density Organization 8M x9 4M x18 Part Number K7R640982M K7R641882M K7R641884M K7R643682M K7R643684M K7R320982C K7R321882C K7R321884C K7R323682C K7R323684C K7R160982B K7R161882B 1M x18 QDR I, QDR II 18Mb K7R161884B K7Q161862B K7Q161864B K7R163682B 512K x36 K7R163684B K7Q163662B K7Q163664B 36Mb QDR II+ 18Mb
# PinsPackage 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA

Vdd (V) 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8
Access Time tCD (ns) 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45 0.45 0.45 0.45 0.45 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.45,0.50
Cycle Time (MHz) 250,200,167 250,200,167 300,250,200,167 250,200,167 300,250,200,167 300, 250, 200 300, 250, 200 333, 300, 250 300, 250, 200 333, 300, 250 250,200,167 250,200,167 300,250,200,167 250,200,167 300,250,200,167 450, 400, 333 450, 400, 333 450, 400, 333 450, 400, 333
I/O Voltage (V) 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5 1.5 1.5 1.5
Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production
Comments QDR II-2B QDR II-2B QDR II-4B QDR II-2B QDR II-4B QDR II-2B QDR II-2B QDR II-4B QDR II-2B QDR II-4B QDR II - 2B QDR II - 2B QDR II - 4B QDR I - 2B QDR I - 4B QDR II - 2B QDR II - 4B QDR I - 2B QDR I - 4B QDR II + 4B QDR II + 4B QDR II + 4B QDR II + 4B
2M x36 QDR II 4M x9 2M x18

1M x36 2M x9

1.8v / 2.5v 2.5 1.8v / 2.5v 2.5 1.8 1.8 0.45,0.45,0.50 0.45,0.45,0.45,0.50
1.8v / 2.5v 2.5 1.8v / 2.5v 2.5 1.8 1.8 1.8 1.8 0.45 0.45 0.45 0.45
1M x36 2M x18 1M x18 512K x36
K7S3218T4C K7S3236T4C K7S1618T4C K7S1636T4C
For QDR I, QDR II: 2B = Burst of 2, 4B = Burst of 4 For QDR II (36Mb): C-die use 300, 250MHz or 200MHz instead of 167MHz using a stable DLL circuit For QDR II (72Mb): 2B = Burst of 2 and 250MHz or 200MHz is recommended, 4B = Burst of 4 and 300MHz or 250MHz is recommended For QDR II+: 2-clock latency supported. 2.5-clock latency can be supported with 450MHz speed
SYNCHRONOUS SRAM ORDERING INFORMATION
SAMSUNG Memory Sync SRAM Small Classication Density Density Organization Organization Vcc, Interface, Mode
Packaging Type Speed Speed Temp, Power Package --Generation Vcc, Interface, Mode
1. Memory (K) 2. Sync SRAM: 7 3. Small Classification
A: Sync Pipelined Burst B: Sync Burst D: Double Data Rate I: Double Data Rate II, Common I/O J: Double Data Rate, Separate I/O K: Double Data II+, Common I/O M: Sync Burst + NtRAM N: Sync Pipelined Burst + NtRAM P: Sync Pipe Q: Quad Data Rate I R: Quad Data Rate II S: Quad Data Rate II+
49: 2.5V,LVTTL,Hi SPEED 52: 2.5V,1.5/1.8V,HSTL,Burst2 54: 2.5V,1.5/1.8V,HSTL,Burst4 62: 2.5V/1.8V,HSTL,Burst2 64: 2.5V/1.8V,HSTL,Burst4 66: 2.5V,HSTL,R-R 74: 1.8V,2.5V,HSTL,All 82: 1.8V,HSTL,Burst2 84: 1.8V,HSTL,Burst4 88: 1.8V,HSTL,R-R T2: 1.8V,2Clock Latency,Burst2 T4: 1.8V,2Clock Latency,Burst4 U2: 1.8V,2.5Clock Latency,Burst2 U4: 1.8V,2.5Clock Latency,Burst4

* OneDRAM 512Mb now EOL * Based on demand, OneDRAM is in MCP only, not in discrete package

103FBGA

OneNAND
OneNAND is a monolothic IC that combines a NAND flash array with a NOR flash interface plus an SRAM buffer. Its ideal for high-performance, high-density applications.
Part Number KFG1216Q2B-DEB8000 KFG1216U2B-DIB6000
Package 63FBGA (9.5x12) 63FBGA (9.5x12) 67FBGA (7x9) 67FBGA (7x9) 63 FBGA (9.5x12) 63 FBGA (10x13) 63 FBGA (10x13) 63 FBGA (10x13) 63 FBGA (10x13) 63 FBGA (10x13) 63 FBGA (10x13)
Org. X16 X16 X16 X16 X16 X16 X16 X16 X16 X16 X16
Voltage (V) 1.8 3.3 1.8 3.3 1.8v 3.3v 1.8v 1.8v 1.8v 1.8v 1.8v
Temp. extended industrial extended industrial extended industrial extended extended extended extended extended
Speed 83Mhz 66Mhz 83Mhz 66Mhz 83Mhz 66Mhz 83Mhz 83Mhz 83Mhz 83Mhz 83Mhz
MOQ (Tray) 1,120 1,120 1,120 1,120 1,120 1,120 1,120 1,120 1,120 1,120 1,120

Remarks

KFG1216Q2B-SEB8000 KFG1216U2B-SIB6000 KFM1216Q2B-DEB8000 KFG1G16U2C-AIB6000
KFG1G16Q2C-AEB8000 KFM1G16Q2C-DEB8000

2Gb 4Gb DDP

KFG2G16Q2A-DEB8000 KFM2G16Q2A-DEB8000 KFH4G16Q2A-DEB8000
*T&R MOQ 2Kpcs **Please contact your local Samsung sales representative for latest product offerings & information on support & availability. NOTE: All parts are lead free

Flex-OneNAND

A monolithic IC with a NAND flash array using a NOR flash interface, Flex-OneNAND enables partitioning into SLC and MLC areas so the chip can be configured for storage or high-speed access.
Part Number KFG4GH6Q4M-DEB8000
Package 63 FBGA (10x13) 63 FBGA (10x13) 63 FBGA (10x13) 63 FBGA (10x13)

Org. X16 X16 X16 X16

Voltage (V) 1.8v 3.3V 1.8v 3.3V
Temp. extended Industrial extended Industrial
Speed 83Mhz 66Mhz 83Mhz 66Mhz
MOQ (Tray) 1,120 1,120 1,120 1,120
Remarks FSR software required FSR software required Muxed. FSR SW req. FSR software required

4Gb Flex-OneNAND

KFG4GH6U4M-DIB6000 KFM4GH6Q4M-DEB8000
8Gb DDP Flex-OneNAND KFH8GH6U4M-DIB6000

moviNAND

Combining high-density MLC NAND flash with an MMC controller in a single chip that has an MMC interface, moviNAND delivers dense, cost-effective storage for embedded applications.
moviNAND Densities 1GB 2GB 4GB 8GB 16GB
Vol(V) 1.8/3.3 1.8/3.3 1.8/3.3 1.8/3.3 1.8/3.3
Package FBGA FBGA FBGA FBGA FBGA
Package Size 12.0x18x1.2t 12.0x18x1.2t 12.0x18x1.2t 12.0x18x1.3t 14.0x18.0

Org. x8 x8 x8 x8 x8

Please contact your local Samsung sales representative for latest product offerings. NOTE: All parts are lead free

OneDRAM

OneDRAM is a dual-port, low-power DRAM with an SRAM buffer interface and is optimal for high-performance, high-density mobile applications.

Package

1. DISC TYPE - READ: MASTERED DISC, CD-R, CD-RW, DVD-ROM, DVD-R 3.95GB, DVD-R 4.7GB Authoring, DVD-R 4.7GB General, DVD-RW 4.7GB, DVD+R 4.7GB, DVD+R 8.5GB(Double-layer), DVD+RW 4.7GB, DVD-RAM 4.7GB/2.6GB - WRITE: DVD 4.7GB(DVDR, DVDRW, DVD-RAM), Double LayerR, CD-R, CD-RW - Print: CD-R, DVD+/-R LS Media 2. DATA FORMAT: - CD: CD-DA, CD-ROM, MIXED-CD, CD-ROM XA, ENHANCED-CD, CD-EXTRA/CD+, Photo-CD, VIDEO-CD, CD-TEXT, CD-G, Multi-Session - DVD: DVD-RAM, DVD-ROM, DVD-VIDEO, Multi-Session(Read/Write), Multi-Border(Read) 3. Recording: - CD-R/RW: DAO, TAO, SAO, Packet Write(RW) - DVD+R/RW: Sequential, Random(RW) - DVD-R/RW: Incremental, DAO, Restricted Overwrite(RW) - DVD-RAM: Random

GENERAL SPECIFICATIONS

Data Transfer Rate MAX Media Type DVD+R DVD+RW DVD+R DUAL DVD-R DUAL DVD-R DVD-RW DVD-ROM (Single) DVD-ROM (Dual) CD-ROM CD-R US-RW HS-RW CD-RW DVD-RAM Data transfer mode Interface Buffer Memory Drive Install Form Size (W * H * L) Buffer Protection Lead Free Light Scribe Write 22X (29.7 MB/sec) 8X (10.8MB/sec) 16X (21.6MB/sec) 12X (16.2MB/sec) 22X (29.7 MB/sec) 6X (8.1MB/sec) 48X (7.2MB/sec) 32X (4.8MB/sec) 10X (1.5MB/sec) 4X (0.6MB/sec) 12X (16.2MB/sec) Read 16X (21.6MB/sec) 12X (16.2MB/sec) 12X (16.2MB/sec) 12X (16.2MB/sec) 16X (21.6MB/sec) 12X (16.2MB/sec) 16X (21.6MB/sec) 12X (16.2MB/sec) 48X (7.2MB/sec) 40X (6.0MB/sec) 40X (6.0MB/sec) 40X (6.0MB/sec) 40X (6.0MB/sec) 12X (16.2MB/sec)
Ultra DMA Mode 2: 33.3MB/sec, Multiword DMA mode2: 16.6MB/sec, PIO Mode 4: 16.7MB/sec ATA/ATAPI (E-IDE) 2M Horizontal / Vertical 148.2mm (W) x 42mm (H) X 170mm (D) with Bezel yes yes yes

SH-S222A Optical Storage

1. DISC TYPE - READ: MASTERED DISC, CD-R, CD-RW, DVD-ROM, DVD-R 3.95GB, DVD-R 4.7GB Authoring, DVD-R 4.7GB General, DVD-RW 4.7GB, DVD+R 4.7GB, DVD+R 8.5GB(Double-layer), DVD+RW 4.7GB, DVD-RAM 4.7GB/2.6GB - WRITE: DVD 4.7GB(DVDR, DVDRW, DVD-RAM), Double LayerR, CD-R, CD-RW 2. DATA FORMAT: - CD: CD-DA, CD-ROM, MIXED-CD, CD-ROM XA, ENHANCED-CD, CD-EXTRA/CD+, Photo-CD, VIDEO-CD, CD-TEXT, CD-G, Multi-Session - DVD: DVD-RAM, DVD-ROM, DVD-VIDEO, Multi-Session (Read/Write), Multi-Border(Read) 3. Recording: - CD-R/RW: DAO, TAO, SAO, Packet Write(RW) - DVD+R/RW: Sequential, Random(RW) - DVD-R/RW: Incremental, DAO, Restricted Overwrite(RW) - DVD-RAM: Random
Data Transfer Rate MAX Media Type DVD+R DVD+RW DVD+R DUAL DVD-R DUAL DVD-R DVD-RW DVD-ROM (Single) DVD-ROM (Dual) CD-ROM CD-R US-RW HS-RW CD-RW DVD-RAM Data transfer mode Interface Buffer Memory Drive Install Form Size (W * H * L) Buffer Protection Lead Free Light Scribe Write 22X (29.7 MB/sec) 8X (10.8MB/sec) 16X (21.6MB/sec) 12X (16.2MB/sec) 22X (29.7 MB/sec) 6X (8.1MB/sec) 48X (7.2MB/sec) 32X (4.8MB/sec) 10X (1.5MB/sec) 4X (5.4MB/sec) 12X (16.2MB/sec) Read 16X (21.6MB/sec) 12X (16.2MB/sec) 12X (16.2MB/sec) 12X (16.2MB/sec) 16X (21.6MB/sec) 12X (16.2MB/sec) 16X (21.6MB/sec) 12X (16.2MB/sec) 48X (7.2MB/sec) 40X (6.0MB/sec) 40X (6.0MB/sec) 40X (6.0MB/sec) 40X (6.0MB/sec) 12X (16.2MB/sec)

SN-S083M Optical Storage

CD 150ms (Random), DVD 160ms (Random) Ultra DMA Mode 2: 33.3MB/sec, Multiword DMA mode2: 16.6MB/sec, PIO Mode 4: 16.7MB/sec Serial-ATA 2M Horizontal / Vertical 128 (W) x 12.7 (H) x 127 (D) without Bezel yes yes yes

SN-S082H Optical Storage

- CD: CD-DA, CD-ROM, MIXED-CD, CD-ROM XA, ENHANCED-CD, CD-EXTRA/CD+, Photo-CD, VIDEO-CD, CD-TEXT, CD-G, Multi-Session - DVD: DVD-RAM, DVD-ROM, DVD-VIDEO, Multi-Session(Read/Write), Multi-Border(Read/Write)
Data Transfer Rate MAX Media Type DVD+R DVD+RW DVD+R DUAL DVD-R DUAL DVD-R DVD-RW DVD-ROM (Single) DVD-ROM (Dual) CD-ROM CD-R US-RW HS-RW CD-RW DVD-RAM Data transfer mode Interface Buffer Memory Drive Install Form Size (W * H * L) Buffer Protection Lead Free Light Scribe Write 8X (10.8MB/sec) 8X (10.8MB/sec) 6X (8.1MB/sec) 6X (8.1MB/sec) 8X (10.8MB/sec) 6X (8.1MB/sec) 24X (3.6MB/sec) 24X (3.6MB/sec) 10X (1.5MB/sec) 4X (0.6MB/sec) 5X (6.75MB/sec) Read 8X (10.8MB/sec) 8X (10.8MB/sec) 8X (10.8MB/sec) 8X (10.8MB/sec) 8X (10.8MB/sec) 8X (10.8MB/sec) 8X (10.8MB/sec) 8X (10.8MB/sec) 24X (3.6MB/sec) 24X (3.6MB/sec) 24X (3.6MB/sec) 24X (3.6MB/sec) 24X (3.6MB/sec) 5X (6.75MB/sec)
Ultra DMA Mode 2: 33.3MB/sec, Multiword DMA mode2: 16.6MB/sec, PIO Mode 4: 16.7MB/sec ATA/ATAPI(E-IDE) 2M Horizontal 128 (W) x 12.7 (H) x 127 (D) without Bezel yes yes no www.samsungodd.com

SN-M242D Optical Storage

CD-DA, CD-ROM, Video CD, CD-I/FMV, CD-ROM XA, Multi-Session Disc, DVD-ROM, DVD-VIDEO, DVDR,DVDRW, CD-R,CD-RW, DVD-RAM
Data Transfer Rate MAX Media Type DVD+R DVD+RW DVD+R DUAL DVD-R DUAL DVD-R DVD-RW DVD-ROM (Single) DVD-ROM (Dual) CD-ROM CD-R US-RW HS-RW CD-RW DVD-RAM Data transfer mode Interface Buffer Memory Drive Install Form Size (W * H * L) Buffer Protection Lead Free Light Scribe Write 24X (3.6MB/sec) 24X (3.6MB/sec) 10X (1.5MB/sec) 4X (0.6MB/sec) Read 8X (10.8MB/sec) 8X (10.8MB/sec) 6X (8.1MB/sec) 6X (8.1MB/sec) 8X (10.8MB/sec) 8X (10.8MB/sec) 8X (10.8MB/sec) 6X (8.1MB/sec) 24X (3.6MB/sec) 24X (3.6MB/sec) 24X (3.6MB/sec) 24X (3.6MB/sec) 24X (3.6MB/sec) 5X (6.75MB/sec)
Ultra DMA Mode 2: 33.3MB/sec, Multiword DMA mode2: 16.6MB/sec, PIO Mode 4: 16.7MB/sec ATA/ATAPI (E-IDE) 2M Horizontal / Vertical 128 X 12.7 X 129.0 yes yes no
[USB 2.0] SE-S084B Optical Storage
1. DISC TYPE READ: MASTERED DISC, CD-R, CD-RW, DVD-ROM, DVD+R 4.7GB, DVD+R DL 8.5GB, DVD+RW 4.7GB, DVD-R 3.95GB, DVD-R 4.7GB Authoring, DVD-R 4.7GB General, DVD-R DL 8.5GB, DVD-RW, DVD-RAM 4.7GB WRITE: DVD4.7GB(DVDR/RW, DVD-RAM), DVDR DL(8.5GB), CD-R/RW Print: CD-R, DVD+/-R Light Scribe Media 2. DATA FORMAT: CD: CD-DA, CD-ROM, MIXED-CD, CD-ROM XA, ENHANCED-CD, CD-EXTRA/CD+, Photo-CD, VIDEO-CD, CD-TEXT, CD-G, Multi-Session DVD: DDVD-RAM, DVD-ROM, DVD-VIDEO, Multi-Session (Read/Write), Multi-Border(Read/Write) 3. Recording mode CD-R/RW: DAO, TAO, SAO, Packet Write(RW) DVD+R/RW: Sequential, Random(RW) DVD-R/RW: Incremental, DAO, Restricted Overwrite(RW) DVD-RAM: Random

Data Transfer Rate MAX Media Type DVD+R DVD+RW DVD+R DUAL DVD-R DUAL DVD-R DVD-RW DVD-ROM (Single) DVD-ROM (Dual) CD-ROM CD-R US-RW HS-RW CD-RW DVD-RAM Access Time Interface Buffer Memory Drive Install Form Size (W * H * L) Buffer Protection Lead Free Light Scribe Write 8X (10.8MB/sec) 8X (10.8MB/sec) 6X (8.1MB/sec) 6X (8.1MB/sec) 6X (8.1MB/sec) 6X (8.1MB/sec) 24X (3.6MB/sec) 24X (3.6MB/sec) 10X (1.5MB/sec) 4X (0.6MB/sec) 5X (6.75MB/sec) USB 2.0 2M Horizontal / Vertical 141mm (W) x 19mm (H) X 157mm (D) yes yes no Read 8X (10.8MB/sec) 8X (10.8MB/sec) 8X (10.8MB/sec) 8X (10.8MB/sec) 8X (10.8MB/sec) 8X (10.8MB/sec) 8X (10.8MB/sec) 8X (10.8MB/sec) 24X (3.6MB/sec) 24X (3.6MB/sec) 24X (3.6MB/sec) 24X (3.6MB/sec) 24X (3.6MB/sec) 5X (6.75MB/sec)
CD 130ms (Random), DVD 160ms (Random)
Disclaimer: The information in this publication has been carefully checked and is believed to be accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or omissions, or for any consequences resulting from the use of the information contained herein. Samsung reserves the right to make changes in its products or product specications with the intent to improve function or design at any time and without notice and is not required to update this documentation to reect such changes. This publication does not convey to a purchaser of semiconductor devices described herein any license under the patent rights of Samsung or others. Samsung makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Samsung assume any liability arising out of the application or use of any product or circuit and specically disclaims any and all liability, including without limitation any consequential or incidental damages. Copyright 2009. Samsung and Samsung Semiconductor, Inc. are registered trademarks of Samsung Electronics, Co., Ltd. All other names and brands may be claimed as the property of others. The appearance of all products, dates, gures, diagrams and tables are subject to change at any time, without notice. BR-09-ALL-001 Printed 01/09

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O W Y.C 100 M.T W.CO.TW WW.100Y DRAM Pages 4-14 M WW 00Y.CO.TW Graphics DDR SDRAM W.TW www.samsung.com/semi/dram OM W.1 OM SDRAM.C W DDR3 WW.100Y.C M.TW DRAM Ordering Information.T 00Y OneDRAM: see Fusion W W.1 Y.COM W DDR2 SDRAM CO. W WW.100.T DDR W W.100Y OM.TW OM W.C W WW W WW.100Y.C M.TW SDRAMSDRAM.100Y M.T.T Mobile W M O W CO. O W W.TW W 00Y Y.C WW.100Y.C M.T RDRAM W W.1 Y.COM W M.T.100 O W WW.100 WW 00Y.CO.TW WW.100Y.C M.TW M.T 1 W M. O W.CO.TW WW.100Y WW 00Y.CO.TW WW.100Y.C M.TW Pages 15-19 OM W M.1 O FLASH WW 00Y.C W WW.100Y.C OneNAND: see Fusion WW 00Y.CO.TW.TW W W www.samsung.com/semi/flash M M.T.1 WW 00Y.CO.TW see Fusion W.1 Y.COM W WW 00Y.CO SLC W moviNAND: Flash W W.T WW.100.T OM W.1 Flex-OneNAND: see Fusion MLC W.1 Y.COM Flash OM W W W.C WW.100Y.C M.TW W W W W SD.and microSD Cards W.T 00Y MT.100.CO.TW W.1 Y.COM W WW 00Y.CO.TW OrderingW Flash Product W W 00Y W W.1 OM W.1 M.T.100 OM WW 00Y.CInformation W WW.100Y.C M.TW WW 00Y.CO.TW W W Solid State Drive: see Storage M.T.1 O W M.1 WW 00Y.CO.TW WW.100Y.C M.TW WW 00Y.CO.TW W W O W M.1 OM W.1 WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.C M.TW W O Pages 20 -25 W W SRAMO OM W.1 WW.100Y.C M.TW WW.100Y.C M.TW WW.100Y.C M.TW O W www.samsung.com/semi/sramWW Synchronous SRAM.CO Y.C W WW 00Y.CO.TW.TW WW.10UtRAM M.TW .100 Ordering Information 0Y W OM W M.1 O W O W SRAM Y.C WW.100Y.C M.TW WW 1Asynchronous.TW WW.100Y.C M.TW. 00 O NtRAM OM W W WW.100Y.C M.TW WW 00Y.CO.TW 0Y.C M.TW WW .Late-write R-R SRAM W 10 O W M.1 / II II+ WWDDR 0Y./CO SRAM W WW.100Y.C M.TW WW 00Y.CO.TW W.T 0 / II / II+ SRAM W O W QDR M.1 OM W.1 WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.C M.TW W O W O W OM W.1 WW.100Y.C M.TW WW.100Y.C M.TW WW.100Y.C M.TW O W O W MULTI-CHIP PACKAGE Pages 26-27 O W WW.100Y.C M.TW WW.100Y.C M.TW WW.100Y.C M.TW W O W NOR/UtRAM Y.CO www.samsung.com/semi/mcp WW.WW 00Y.CO.TW.TW WW.100Y.C M.TW W NOR/DRAM 0 NAND/DRAM OM W M.1 O W O W W Y.C WW.100Y.C M. OneDRAM/OneNAND/NAND TW WW OneNAND/DRAM WW.100Y.C M.TW M.T.100 O W O W Flex-OneNAND/DRAM WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.C M.TW W OneNAND/DRAM/OneDRAM O W M.1 O W WW.100Y.C M.TW WW 00Y.CO.TW moviNAND/NAND/DRAM.TW WW.100Y.C M W O W M.1 O W WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.C M.TW W O W O W OM W.1 WW.100Y.C M.TW WW.100Y.C M.TW WW.100Y.C M.TW O W W Memory 0Y.CO 0Y.C WW.10Page 28 M.TW WW 00Y.CO.TW FusionWW.TW 0 W O W M.1 OM W.1 FUSION MEMORY WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.C M.TW W O www.samsung.com/semi/fusion W O W OM W.1 WW.100Y.C M.TW WW.100Y.C M.TW WW.100Y.C M.TWOneNAND O W O Flex-OneNANDW WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.C M.TW W O W OM moviNAND WW W.1.CO.TW WW.100Y.C M.T W 00Y WW.100Y.C M.TOneDRAM W O W OM W.1 WW.100Y.C M. WW 00Y.CO.TW WW.100Y.C M.TW W O W O W OM W.1 WW.100Y.C M WW.100Y.C M.TW WW.100Y.C M.TW W O W.CO WW.1 WW 00Y.COSTORAGE Pages 29-3300Y W WW.100Y.C M.TW W W M.T.1 W.CO.TW HaManufacturers WW WW 00Y.CO State Drives repsr Flash 00Y InternalDisk Drives WW Optical CD Solid TW W. M.1 Solid State Drives W.1 Y.COM W www.samsungodd.com www.samsungssd.com WW 00Y.CO.Disk Drives WW W State Drives W Optical Solid Flash T M. DVD.100 ExternalT M W.1 Ywww.samsungodd.com WW.CO DVD CO. Y W W 00 Internal WW.100 Hard DiskTDVD. Drives External W.1 Internal COMBO OM W www.samsung.com/hdd WW WW.100Y.C MDVD Internal.TW Internal CD Hard Disk Drives O W Internal COMBO W W Y.C W M.T.100 WW 00Y.CO W.1

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O W OM WW free.100Y.C M.TW M392T2950GZA-C(E6/F7) Lead 667/800 Y 1 Now W Y.C WW.100Y.C M.(128M x4)*18 TW T.128Mx1GB W WW 00Y.CO 667/800 W Y W.1 Y.COM W C M392T2863QZA-C(E6/F7) O (128M x8)*9 Lead free 1 Now W W WW.100Y.TW M.T.1 M.T.100 M392T2863EHA-C(E6/F7).COM (128M x8)*9 LeadWWHalogen free CO free & 1 Feb '09 W. 667/800TW Y Y W W WW 00Y.CO.TW WW.100Y.Tx4)*18 M.100 M M392T5660QZA-C(E6/F7) Lead free W 667/800 Y 1 Now O O(256M W OM W.1 WW.100Y.C667/800.TW Y WW.100Y.C (256M.TW M392T5660EHA-C(E6/F7) x4)*18 Lead free & Halogen free 1 Feb '09 WW.100Y.C M.TW M OM W 2GB 256Mx72 CO WW 00Y.667/800.TW WW 00Y.CO.TW M392T5663QZA-C(E6/F7) Y. (128M x8)*18 LeadW free Y 2 Now WW.100 C M.TW W OM W.1 W W.1 Y.COM W M392T5663EHA-C(E6/F7) 0Y.CO x8)*18W W (128M Lead free &W Halogen free 0Y.C 667/800 Y 2 Mar '09 W WW.10.T WW.100 M.T.10.T OM W M392T5160QJA-C(E6/F7) DDP (512M x4)*18 Lead free WW 667/800 Y 2 Now.CO.TW OM W.C Y C W W WW. 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W Y WW.100 C M.T WW (128M x8)*9.C M.Tfree WW.100Y.C M.TW.100 M395T2863QZ4-CE6/F7/E7(60/80/90) Lead 667/800 1.8V O 1 Now W O W CO Y WW 00Y.M395T2863EH4-CE6/F7/E7(60/80/90) W (128M x8)*9.C Lead.TW Halogen free WW.100Y.C M.TWJan`09 W W 1GB W 128Mx72 667/800 1.8V.T M free &.100 O 1 W W.1 Y.COM W WW x8)*9 Y.COLead free W WW.100Y.C 1.TW 667 1.55V W (128M.100 WW.100 M395T2863QZ4-YE680 M Now M.T M.T WW 00Y.CO1.TW W M395T2863EH4-YE6/F7(80) (128M Lead &W 1.55V Mar`09 WWx8)*900Y.CO free.THalogen free 667/800 CO W W W WW.100Y. M.1 W.1 1.8V Y.COM Now M.T O W (128M x4)*36 Lead free 667/O W M395T5750GZ4-CE6/F7/E7(50/60) WW.100.TW WW x8)*1800Y.C free.TW WW.100Y.C M.TW M395T5663QZ4-CE6/F7/E7(60/80/90) (128M W.1 Lead M 667/800 1.8V 2 OM Now W O C O W W W Y.C & Halogen free 667/800 W 1.8V00Y. 2 M.TW W WW.100Y.C M.TW M395T5663EH4-C(E6/F7/E7)(60/80/90) W x8)*Lead freeM.T 2GB 256Mx72 (128M. O Jan`09 W.1 O W O W M395T5663QZ4-YE680 W Cfree W W 667 WW 1.55V 00Y.C Now.TW.C Y. W (128M x8)*W W.T 00Y M.T.100 Lead OM W.1 W.1 Y.COM W WW 00Y.CO Halogen free 667/800 WW 1.55V 100Y.C Feb '09TW M395T5663EH4-YE6/F7(80) (128M x8)*18 Lead free & 2 W W TW W M.T 00.1 Lead free OM. M395T5160QZ4-CE6/F7/E7(60/80/90) (256M x4)*36W 667/800 1.8V 2 Now WW 00Y.CO.TW W.1 Y.COM W.C W.TW 667/800 W 1.8VW.00Y WW M395T5160EH4-C(E6/F7/E7)(60/80/90) (256MW.T OM x4)*36 W.1 Lead free & Halogen free Feb.100 OM OM W W.C Y.C '09.TW W W.C Y W 1.55V.Now M W (256M x4)*W WW.100Y M395T5160QZ4-YE680 M.T 10 M.T 667.Lead0free O WW 00Y.CO.TW W WW Lead00Y.CO free.TW W W M395T5160EH4-YE6/F7(80) free & Halogen 667/800 1.55V 2 Feb '09 WW.100Y.C M.TW (256M x4)*36 W.1 Y.COM W W.1 free Y.COM 667/800 O W M395T5163QZ4-CE6/F7/E7(80) (128M x8)*36 W Lead 0 1.8VW Now W.C W W.T W Y W T W 4GB 512Mx72 W.1 Mar`09 OM W M.T (128M x8)*36 WW.10 & Halogen free. 667/800.100 OM C O W Lead free 1.8V W 4 M395T5163EH4-CE6/F7/E7(80).C Y. W TW WW.100Y.C M.TW(128M x8)*36 W Lead free00Y M.T.100 M.667.1 M395T5163QZ4-YE680 1.55V WW 4 Now.CO W O W CO W. W W 00Y WW.100Y.C M.TW x8)*36 W Lead free100Y free M.TW M.T (128M 1.55V 4 W.1 Mar`09 M395T5163EH4-YE680 W. & Halogen.CO 667 W.CO.TW O W W W 00Y.T M395T5263AZ4-CE6/F7(60/80) (256M 667/800 1.8V W 2 Now WW.100Y.C M.TW x8)*18 WLead free.100Y W.1 Y.COM OM W O (256M x8)*18 W Now00 W Lead free M395T5263AZ4-YE680 0Y.C.T WW.100Y.C 667.TW 1.55V W2 WW.10.TW M W.1 Y.COM O OM DDP (512M x4)*36 LeadWW W M395T1G60QJ4-CE6/F7(80) 4 WW Now100. W free 100Y.C 667/800.TW 1.8V WW.100Y.C M.TW. OM DDP (512M x4)*36 Lead free &W. Halogen free.COM 667/800 1.8V 4 WW Mar`09 M395T1G60EM4-CE6/F7(80) O W Y.C W 00 Y.C DDP.(512M x4)*36 Lead free WW.100Y 667 M.TW 1.55V WW TW M M395T1G60QJ4-YE680.Now.1 O W OM WW 00Y.CO W C 8GB 1Gx72 W.C DDP (512M x4)*36 Lead WW Y.667 W Mar`09.1 WW. free & HalogenM395T1G60EM4-YE680 100Y.TW M.T 1.55V. free OM x4)*18 WW W WW 00Y.CO.TW M395T1K66AZ4-CE6/F7(60/80) 0Y.C st. (1G TW Lead free 667/800 1.8V 2 WNow W WW.10. W.OM 1.55V OM st. (1G x4)*18 Lead free 2 Now M395T1K66AZ4-YE680 W W WW.100Y.C M.TW 0Y.C M.TW W.10 O W NOTES: C: AMB Voltage = 1.5V 50: Intel C1 AMB 800 Speed option would be limited along with AMB type. W.C CO AMB WW C: DRAM Voltage = 1.8V WW.100Y.60: IDT D1M.TW Module Height = 1.2".100Y Y*: AMB Voltage = 1.5V (Available only with CE6) 80 : IDT L4 AMB W O W Y*: DRAM Voltage = 1.55V (Available only with CE6) 90: Montage D1 T WW WW.100Y.C MAMBW. O W WW.100Y.C M.TW www.samsung.com/semi/dram JANUARY 2009 DDR2 SDRAM 6 O W WW.100Y.C

O W Y.C 100 M.T W.CO.TW WW.100Y OM W DDR2 SDRAM UNBUFFERED MODULES W WW.100Y.C M.TW M.T O W.CO.TW Y.C WW.100Module M.TW 0Y 0 M O W Density Organization Part.1 Composition Compliance Speed (Mbps) Rank Production WWNumberY.CO.TW WW.100Y.C M.TW W M378T6553GZS-C(E6/F7/E7) 00 Lead free 1 Now OM (64M x8)*8 W.1.CO.T667/800 WW 512MB 64Mx64 W W W WW.100Y.C M.T(64M x16)*4 W Lead free 00Y M378T6464QZ3-C(E6/F7/E7) 667/Now 1.T OM W. O W OM WW free.100Y.C M.TW M378T2953GZ3-C(E6/F7/E7) (64M Lead 667/Now W Y.C WW.100Y.C M.TWx8)*16.T 00 W WW 00Y.CO 667/800 W.1 1GBCOM 128Mx64 CO (128M x8)*8 M378T2863QZS-C(E6/F7/E7) Lead free 1 Now W W.TW W Y. WW.100Y.TW W.1 Y.C M W M.T.100 M378T2863EHS-C(E6/F7/E7) OM (128M x8)*8 Lead free & Halogen free O 667/Now W WW.100 WW 00Y.CO.TW WW.100Y.C M.TW M.T M378T5663QZ3-C(E6/F7/E7) O (128M x8)*16 Lead free W 2 Now O 667/800 W OM W.1 2GB 256Mx64 WW.100Y.C 667/800 W WW.100Y.C (128MTW. x8)*16 M378T5663EH3-C(E6/F7/E7) Lead free & Halogen free 2 Now WW.100Y.C M.TW M.T O W OM W WW.100Y.C 667/800TW WW 4GB 0Y.CO.TW 512Mx64 M378T5263AZ3-C(E6/F7)0Y. Lead free 2 Now WW.10 C (256M x8)*16.TW W M. 10 OM WW 00Y.CO.TW W.NOTES: Y.COM (DDR2-667 @ CL=5) WW.CVoltage = 1.8VW E6=PC2-5300 W.T 00Y Module Height WW.100 E7=PC2-6400 (DDR2-800 @ CL=5) W M.1.TW W.1 Y.COM =1.2" OM (DDR2-800 @ CL=6) WW 00Y.CO.TW W W C W.F7=PC2-6400.TW W W WW.100Y M.T.100 OM W.1 OM W WW 00Y.CO.TW WW.100Y.C M.TW W W Y.C W W DDRO W.10SDRAMM.T UNBUFFERED MODULES (ECC)OM W.1 WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.C M.TW W Module M.1 O W WW 00Y.CO.TW WW 00Y.CO.TW Number WW 0Y.C M Density Organization Part Composition.TWCompliance W Production W M Rank.1 Speed (Mbps) 10 W. WW 667/800CO.TW W.1 64Mx72.COM M391T6553GZ3-C(E6/F7/E7). (64MY.CO 512MB Lead 1 Now W W 00Y WW.100 x8)*9 M.TW free WW.100Y W.1 Y.COM 1 W Now M.T W (128M Y.CO O M391T2863QZ3-C(E6/F7/E7) W W WW 667/800.T YC WW.100x8)*9 TLead free 1GB W 128Mx72. W TW.100 M.M391T2863EH3-C(E6/F7/E7) W(128M x8)*9COM. Lead free & Halogen free WW667/800 Y.COM1 W Jan '09.100 O W. W.T 00 WW (128M 0Y.TW WW.100Y.C M.TW 10 free 667/W.1 Y.COM W Now O M391T5663QZ3-C(E6/F7/E7) WW. x8)*18.COM Lead W W 2GB 256Mx64 WW 667/W W (128M x8)*18.T Lead free & Halogen free 2 M.T Jan '09 00Y WW.100Y.C M391T5663EH3-C(E6/F7/E7).10 M.T W.1 Y.COM W OM391T5263AZ3-C(E6/F7) WW 00Y.CO.TW W W x8)*18 W 667/8001 W 4GB 512Mx64 0Y.C (256M 00 LeadT free 2 Now W W W.T 0 M.1 OM W. W.1 Y.C @ M W NOTES: E6=PC2-5300 (DDR2-667OCL=5) Voltage WW = 1.8V 0Y.CO.TW WW.100Y.C M.TW W Module Height =1.2" 0 WW.100 E7=PC2-6400 (DDR2-800 @ CL=5).T O W M OM W.1 F7=PC2-6400 (DDR2-800 @O W C CL=6) TW WW.100Y.C M.TW W Y. WW.100Y.C M.TW 0 W. 0 O W O W W.1 Y.COM W WW.100Y.C M.TW WW.100Y.C M.TW 0 WW SODIMM MODULES T. O W DDR2 SDRAMW.10 O W OM WW.100Y.C M.TW W W Y.C WW.100Y.C M.TW W Module O W M.T.100 W Y.C Production WW 00Y.CO.TW CO WW WW 00Y.Number.TW W Density Organization Part Composition Compliance Speed (Mbps).100 Rank W M.T W.1 W.1 Lead.COM W.CONow.TW OM W M470T6554GZ3-C(E6/F7/E7) (32M x16)*8 667/800 W 200Y W WW.100Y free M.T WW.100Y.C M.TW 512MB 64Mx64 W.1 Y.COM W O O W M470T6464QZ3-C(E6/F7/E7) (64M x16)*4WW Lead free Now W 667/800WW 1100 Y.C Y.C W WW.M470T2953GZ3-C(E6/F7/E7) (64M x8)*16 M.T.TW.100 free OM.T 100 W2 667/800 Now W Lead Y.C.CO.TW OM W W WW 00Y.C W (64M x16)*8 W.100free 00Y W.TW 1GB 128Mx64 W M470T2864QZ3-C(E6/F7/E7) 2 W.1 YNowOM W M.T.1 W Lead Y.COM W 667/800.C O W W Lead0free & Halogen freeT 667/800 WW Now 0. 0Y.C M.T WW M470T2864EH3-C(E6/F7/E7) W (64M x16)*8W M.T. 0 W.1 Y.COM W.C WW 00Now O.TW W.1 Y.CO W Lead free.T 667/800 W 2 W.1 Y OM 00 WW M470T5663QZ3-C(E6/F7/E7).TW(128M x8)*8 W 2GB 256Mx64 M.100 OM W.1free & Halogen free O W M470T5663EH3-C(E6/F7/E7) (128M x8)*8 667/0Y WW.10Now.C M.TW WW Lead.100Y.C M.TW WW.100Y.C M.TW W NowY.CO 4GB 512Mx64 M470T5267AZ3-C(E6/F7) st.(512M x8)*8 Lead 667/O W W WWfree 00Y.CO.TW WW.100 0Y.C M.TW = 1.8V W WW M.T M.1 NOTES: E6=PC2-5300 (DDR2-667 @ CL=5).10 Voltage W O W.CO.TW O W E7=PC2-6400 (DDR2-800 @ WW Y.C WW.100Y.TW WCL=5).100Y.C M.Module Height =1.2" W TW F7=PC2-6400 (DDR2-800 @ CL=6).100 OM W OM WW 00Y.C W WW.100Y.C M.T WW 00Y.CO.TW W W M.T.1 O W W.1 Y.COM W WW 00Y.CO.TW WW.100Y.C M. W W W M.1 O W M.T.100 WW 00Y.CO.TW WW.100Y.C M WW 00Y.CO.TW W W O W M.1 OM W.1 WW.100Y.C WW 00Y.CO.TW WW.100Y.C M.TW W W O W OM W.1 WW WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C WW.100Y.C M.TW W O W WW WW.100Y.C M.TW O W Y.C WW.1002009 M.TW www.samsung.com/semi/dram 7 JANUARY DDR2 SDRAM O W WW.100Y.C

O W Y.C 100 M.T W.CO.TW WW.100Y OM W DDR SDRAM COMPONENTS W WW.100Y.C M.TW M.T Density Organization PartCO Notes WW 00Y O Speed (Mbps). Number.TW W# Pins - Package.C M.TW 0Y.1 M.10 K4H560438J-LCB3/B0 O 266/333 W 64Mx4 66-TSOP Halogen -free O W WW.100Y.C M.TW WW.100Y.C M.TW 256Mb 32Mx8 66-TSOPW 333/400 Halogen -free O O W K4H560838J-LCCC/B3 WW.100Y.C 333/400TW. W 16Mx16 WW.100Y.C M.TW K4H561638J-LCCC/B3 66-TSOP Halogen -free.T OM W O W OM WW.100Y.C266/333.TW 66-TSOP Halogen -free W 0Y.C M Y.C WW K4H510438F-LCB3/B0.TW 0 M.T 128MxW W.1 Y.CO.CO.TW W.1 Y.COM W K4H510438F-HCCC/B3 60-FBGAW 333/400 Halogen -free Y W W WW.100.TW.100 333/400M.100512Mb OM.T OM K4H510838F-LCCC/B3 66-TSOP WW Halogen -free W.CO.TW W WW 00Y.C 64Mx8 W 00Y 0Y.C WW K4H510838F-HCCC/B3 M.TW.1 333/400 M.T 10 60-FBGA Halogen -free O W. OM WW 00Y.CO.TW W.1 WW.100Y.C M.TW 66-TSOP W K4H511638F-LCCC/B3 Halogen -free WW.100Y.C M.32Mx16 TW.1 333/400 OM O W WW 0400/500 Y.C WW 128MbY.CO 8Mx16 K4H281638L-LCCC/CD Halogen -free.TW W WW.100Y.C M.TW 66-TSOP W W.1 0.T 00 OM 1 W M = DDR266 (133MHz @ CL=2.5) W.NOTES: O (166MHz @ CL=2.5) O B0 W W W.DDR333.TW B3 = C Y.C W WW.100Y DDR400 (200MHz @ CL=3) WW.100Y.C A2 =.DDR266 (133MHz @ Cl=2) TW M.T.100 W CC =.COM W OM WW 00Y.CO.TW W W WW.100Y WW.100Y.C M.TW M.T OM W.1 O W WW 00Y.CO.TW WW.100Y.C M.TW WSDRAMY.C W COMPONENTS W W M.T.100 OM # W.1 WW 0.CO Density Organization Speed Remarks WW 00Y.CO.TW Part Number WW.100Y.C M.Pins - Package W (Mbps) 0YRefresh M.TW TW W W.1 Y.CO K-dieW M.1 O 54-TSOP W 8Mx8 K4S640832N-UC(75)changing to N-die O WW.100 4K WW WW.100.C M.TW W64Mb.100Y.C M.TW K4S641632N-UC(L)(75/60)000 Y M.T W 4Mx16 54-TSOP 133/143/166 4K.CO K-die changing to N-die W O W.CO.T WW.100Y.TW WW WW.100Y.C M.TW K4S280832K-UC(L)(75)000.100Y 54-TSOP W 16MxI-die M W 4K Y.COM changing to K-die O W O 128Mb W W.C WW.100 WW.1 8Mx16 133/166 4K I-die.T WW.100Y.C M.TWK4S281632K-UC(L)(75/60)000 00Y 54-TSOP.TW OMchanging to K-die W OM W.C H-die changing to J-die W 64Mx4 O K4S560432J-UC(L)(75)000 54-TSOP 133 WW 8K 0Y.TW WW.100Y.C M.TW 10 WW.100Y.C M.TW OM W.8K Y.CH-die changing to J-die W W 32Mx8Y O 256Mb K4S560832J-UC(L)(75)000 W CO W 00 WW.100Y.54-TSOP M.TW 133 W WW.16Mx16.C M.TW M.T W.1 Y.COchanging to J-die K4S561632J-UC(L)(75/60)000 54-TSOP 133/166 8K H-die O W O W WW.100.TW WW.100Y.C M.TW 133 WW 128Mx4Y.C M.K4S510432D-UC(L)(75)000 TW 54-TSOPO 8K OM W.100 W W.CO K4S510832D-UC(L)(75)000 WW 00Y.C WW 8K.100Y.C M.TW W 512Mb WW 64Mx800Y.TW.1 54-TSOP OM.T 133 O W W OM W.1 WW.100Y.C M.TW 54-TSOP 133 8K WW.100Y.C M.TW WW 32Mx16 00Y.C K4S511632D-UC(L)(75)000.TW O W W.1 Y.COM NOTES: L = Commercial Temp., Low Power products are WW All00Y.COlead freeTW WW.100Y.C M.TW. 0 WW industrial0temperature, check with WMarketing W T SSI For Voltage: 3.3V 1 O W M.1 OM W.Speed: PC133 (133MHz CL=3/PC100 CL2) Banks: 4 WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.C M.TW W O W O W OM W.1 WW.100Y.C M.TW WW.100Y.C M.TW WW.100Y.C M.TW O W RDRAM COMPONENTS CO O W WW.100Y.C M.TW WW 00Y. W 0 (Mbps) WW.SpeedY.C M.TW Pins - Package 0 W Organization T Density # W RefreshY O M.Part Number.1 O W1 W WW 16K/32ms.C M.TW WW 00Y.CO K4R881869I-DC(M8/T9)WW 800/1066Y.C.T 92-FBGA 00 Wx18.1 288M.100.TW W.1 Y.COM W OM WW 00Y.CO.TW W W NOTES: Voltage: WW.100 0Y. WW 2.5 V.1lead freeC M.TW M.T OM W.1 All products are 0 O W WW 00Y.CO.TW.C WW.100Y.C M.TW W W Y W W O W M.T.100 OM W.1 WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.C M.TW W O W O W OM W.1 WW.100Y.C M.TW WW.100Y.C M.TW WW.100Y.C M.TW O W O W O W WW.100Y.C M.TW WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.C M.TW W O W O W OM W.1 WW.100Y.C M.T WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C M. WW 00Y.CO.TW WW.100Y.C M.TW W O W O W OM W.1 WW.100Y.C M WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C WW 00Y.CO.TW WW.100Y.C M.TW W W O W OM W.1 WW WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C WW.100Y.C M.TW W O W WW WW.100Y.C M.TW O W Y.C WW.1002009 M.TW www.samsung.com/semi/dram 9 JANUARY DDR, SDRAM & RDRAM O W WW.100Y.C

O W Y.C 100 M.T W.CO.TW WW.100Y OM W Graphics DRAM Components.TW WW.100Y.C M.TW O OM # Pins - Package WW Type Density Organization Part Number (MHz) Effective Speed Status W VDD/VDDQ 0Y.C Speed.BinW 0 0Y.C M.TW (Mbps) MT.1.10 O W WW.CO.170-FBGA W1.5/1.5V.100Y.C800/900/1000.TW 512Mb 16Mx32 W K4G52324FG 3200/3600/4000 W TW 00Y M.1 OM GDDR5 W W.C W CO 170-FBGA. 1GbW 32Mx32 W K4G10324FE 1.5/1.5V 3600/4000/5000 CS in 1Q'09 W.T 00Y 900/1000/1250W W.TW 00Y W.1 Y.COM W M.T W.1 Y.COM W K4J10324QD 136-FBGA 1.8V/1.8V O WW.100 700/800/900.T W Y.C WW.100 M M.T W 1Gb 32Mx32 K4J10324QD 136-FBGA 1.85V/1.85V 1000 O M.T.100 W Y.C WW 00Y.CO.TW WW.100700/800/1000/1200/1300 WW 00Y.CO.TW W K4J10324QE M.T 136-FBGA 1.8V/1.8V W CS in Q2'09 M.1 W.1 Y.COM W.CO.TW 0Y WW.10700/800 M WW 00Y.CO.TW WW.100 T K4J52324QH 136-FBGA 1.8/1.8V. W M.1 OM.CO.TW WW 0 K4J52324QH 0Y.C 136-FBGA TW 1.9/1.9V W 1000Y W WW 00Y.CO.TW W. W.100 GDDR3 M.1 OM W K4J52324QH 136-FBGA W.1 Y.COM W WW 00Y.CO.TW 2.05/2.05V W 12000Y.C W.TW W WW.100 512MbM.T16Mx32.10 K4J52324QH. 136-FBGA W 1 Y.COM W 2.05/2.05V WW1300 0Y.COM W O W 0 WW T 1.8/1.8V W WW.100Y.C M.TW M.T.10 K4J52324QI.10 136-FBGA M. 700/800 CS in Q3'09 O W O WW 00Y.CO.TW W W W Y.C WW.100Y.C M.TW1.9/1.9V W 1000.1 K4J52324QI 136-FBGA CS in Q3'09 W OM W M.T.100 WW 00Y.CO.TW WW.100Y.C M.TW WW 00Y.CO.TW K4J52324QI 136-FBGA 2.05/2.05V 1200 CS in Q3'09 W W 1 WW 00Y.CO.TW W.1 Y.COM W K4W1G1646D W. 100 0Y.COM 1.5/1.5V W 667.1 WW.10 FBGA.TW WW.100 OM W M.T W 100 FBGA.COM 1.8V/1.8V gDDR3 1Gb 64Mx16 K4W1G1646D 800/900 WW.100Y.C M.TW WW 00Y.CO.TW WW 100 00Y TW. W K4W1G1646E 800/900/1000 CS in Q1'09 O W M.1 OM 1.5V/1.5V W.1 FBGA WW.100Y.C M.TW WW 00Y.CO.TW K4N1G164QQ W 84-FBGA0Y.C W.TW 0 W 1.8/1.8V 400/500 M O W M.1 W.1 1Gb 64Mx16.CO 1.8/1.8V WW.100Y.C M.TW WW 00Y.CO.TW K4N1G164QE WW 84-FBGA00Y 400/500 TW W M.1 O gDDR2 W M W.1 WW 00Y.CO 1.8/1.8V W K4N51163QG 84-FBGA 400/500 WW.100Y.C M.TW W512Mb 00Y.CO.TW W.T W 32Mx16 M K4N51163QZ.1 OM W.1 84-FBGA 1.8/1.8V 400/500 WW.CO.TW W WW 00Y.CO.TW 00Y WW.100Y.C M.TW W OM 144-FBGA 2.5/2.5V 200/250 W.1 M K4D263238K.1 WW 00Y.CO.TW. WW.100Y.C M.TW WW 04Mx32CO K4D263238K W W GDDR1 W 128Mb.1 0Y 100-TQFP.1 2.5/2.5V 200/250 M W M.T.CO.TW W CO WW 00Y.2.5/2.5V.TW 200/250 WW.CO K4D261638K W W 00Y Y W 8Mx16 66-TSOPII W OM W.1 M.T.100 OM W.1 NOTES: (1) Package: Speeds WW.100Y.C M.TW WW 00Y.CO (2) Architecture: WBanks (3) WW- speed.100Y.C M.TW W Lead Free or Halogen Free 4 Banks or 8 (clock cycle O W M.T.1 W bin): 1A: 1ns (2Gbps).CO. 04: 0.4ns(5.0Gbps) WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y1.1ns (1.8Gbps)TW25: 2.5ns (0.8Gbps) W 05: 0.5ns(4Gbps) 2A: 2.86ns (0.7Gbps) M.1 W 11: 1.25ns OM WW 00Y.CO.TW 5C: 0.555(3.6Gbps) 12: 33: WW 00Y.CO.TW WW.100Y.C (1.6Gbps).TW 3.3ns (0.6GbpsW 1 W 06: 0.625(3.2Gbps) 14: 1.429ns (1.4Gbps) M 40: 4.0ns (0.5Gbps) M.1 W 16: 1.667ns (1.2Gbps) 50: 5.0ns (0.4Gbps) WW. 0Y.COM W (2.8Gbps) CO Y.(1Gbps).TW W WW 00Y.CO.TW 07: 0.71nsWW.T 0 08: 0.83ns (2.4Gbps) 20: 0 W.102.0ns OM W.1 Y.COM W.1 09: 0.90ns (2.2Gbps) W 22: 2.2ns (0.9Gbps) OM W WW.100 WW.100Y.C M.TW WW.100Y.C M.TW M.T O W O WW 00Y.CO.TW W.C W WW.100Y.TW WW.100Y.C M.TW M.1 OM W O WW 00Y.CO.TW W.C W W.C Y W W WW.100Y.TW M.T.100 OM W.1 OM W WW 00Y.CO.TW.C WW.100Y.C M.TW W W Y W W O W M.T.100 OM W.1 WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.C M.TW W O W O W OM W.1 WW.100Y.C M.TW WW.100Y.C M.TW WW.100Y.C M.TW O W O W O W WW.100Y.C M.TW WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.C M.TW W O W O W OM W.1 WW.100Y.C M.T WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C M. WW 00Y.CO.TW WW.100Y.C M.TW W O W O W OM W.1 WW.100Y.C M WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C WW 00Y.CO.TW WW.100Y.C M.TW W W O W OM W.1 WW WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C WW.100Y.C M.TW W O W WW WW.100Y.C M.TW O W WW.100Y.C M.TW www.samsung.com/semi/dram JANUARY 2009 Graphics DRAM 10 O W WW.100Y.C

O W Y.C 100 M.T W.CO.TW WW.100Y OM W Mobile SDRAM Components.TW WW.100Y.C M.TW O W OM.CPins-Package Type Density Organization Part Number W # Power W Refresh W 00Y 0Y.C M.TW M.T.1.10 O W K4M51163PE-(1)(2)(3)(4) 54-FBGA 8K 1.8V O W WW.100Y.C M.TW MMSDRAM 512Mb WW.32M0Y.C M.TW 0 x16 K4M51163PG-(1)(2)(3)(4) W 54-FBGA 8K 1.8V O O W1 Y.C WW.10060-FBGA M.TW 8K W WW.100Y.C M.TW K4X51163PE-(1)(2)(3)(4) W 1.8V.T O O W x16 MMSDDDR 32M OM 512Mb WW.100Y.C M.TW W K4X51163PG-(1)(2)(3)(4) 60-FBGA 8K 1.8V Y.C WW.100Y.C M.TW.T 00 W. W.1 Y.COM W CO K4M51323PE-(1)(2)(3)(4) WW 54-FBGACO.TW Y 8K 1.8V W W WW16M x32 00Y.TW 100 512Mb.100MMSDRAM M.T W.1 Y.COMK4M51323PG-(1)(2)(3)(4) WW. 90-FBGA.COM 8K 1.8V Y W WW 00Y.CO.TW.TW WW.100.TW.100 W54-FBGA Y.COM 8K W M.1 K4X51323PE-(1)(2)(3)(4) 1.8V OM O 512Mb W W WW W16M x32.100Y.C K4X51323PG-(1)(2)(3)(4) W.TW 0Y.C WW.1MMSDDDR M.TW M.T.100 90-FBGA 8K 1.8V 0 OM W WW 0.CO.TW WW MMSDRAM O 256Mb W Y.C WW.100Y.C K4M56163PI-(1)(2)(3)(4) W 54-FBGA 0Y 16M x16 8K 1.8V.TW W M.M.T OM W WW 00Y.CO 8K.TW W.MMSDDDR.CO256Mb W.CK4X56163PI-(1)(2)(3)(4) 16M W 1.8V W 60-FBGA W x16.100Y.TW WW.100Y M.1.T OM W OM WW 00Y.CO8K.TW W MMSDRAM 256Mb 8M x32W K4M56323PI-(1)(2)(3)(4) 1.8V.C W 90-FBGA.1 W.TW 00Y WW MMSDDDRY.C 256Mb.TW M W M.100 8M x32 K4X56323PI-(1)(2)(3)(4) 90-FBGA 8K W.1 Y.COM W CO O W W 1.8V WW.100Y. WW.100 K4M28163PN-(1)(2)(3)(4).T WW.100Y.C M.TW M.T 128Mb 8M x16 54-FBGA 4K 1.8V O W OM W Y.C WW.100Y.C M.TW 3.0V WW 00Y.CO.TW WW.100K4M641633K-(1)(2)(3)(4).TW 54-FBGA 4K W W M.1 OM MMSDRAM W.CO.TW 2.5V WW.100Y4K WW 0064Mb O.TW 4M x16 WW K4M64163LK-(1)(2)(3)(4) 54-FBGA 0Y.C M.TW Y.C W 10. OM W M.1 O 54-FBGA 4K 1.8V WW K4M64163PK-(1)(2)(3)(4) W Y.C WW.100Y.C M.TW WW 00Y.CO.TW W.T 00 W M.1 OM W.1K4X1G153PE-(1)(2)(3)(4) W 60-FBGA WW 8K.CO 1.8V O W W Y W Y.C W.T WW.100Y.C M.TW64M x16 W M.T1.8V.100 100. K4X1G163PC-(1)(2)(3)(4) 60-FBGA W 8K Y.CO OM W O W W Y.C.TW 00 WW K4X1G163PQ-(1)(2)(3)(4).TW 60-FBGAW WW.100Y.C M.TW M.100 W.18K Y.COM 1.8VW O W O W W Y.C.T WW K4X1G323PC-(1)(2)(3)(4).TW 90-FBGA W 1 WW 1Gb 00Y.C M.TW M1.8V.8K00.100 MMSDDDR.1 OM W O WW 8K 00Y.CO 1.8VTW W.C WWK4X1G323PC-(1)(2)(3)(4)M.TW 152-FBGA W 00Y WW.100Y.C M.TW M.1 32M x32 W.1 Y.CO K4X1G323PD-(1)(2)(3)(4) 90-FBGA 8K O WW 00Y.CO 1.8V.TW W WW.100.TW152-FBGA W 8K.1 WW.100Y.C M.TW OM W K4X1G323PQ-(1)(2)(3)(4) M 1.8V O W WW8K.100Y.C 1.8V.TW WW 00Y.CO 64MTW WW.100Y.C M.TW W 2Gb.1. x32 K4X2G303PD-(1)(2)(3)(4) OM W M WW 00Y.CO.TW & Power: WW 0Y.C(3)-(4) M.TW WW 00Y.CO.TW Speed: Temp W NOTES: W(1) Package:.1.10 M (2)Commercial.1 O Mobile SDRAM DM 90-FBGA_L(LF,HF) N : 54-CSP(LF,HF,OSP) C: 70C), WW Mobile-SDRAM W WW 00Y.CO L:.Commercial, (-25 ~i-TCSR Normal 100Y.C 166MHz,.T3W CO:: FBGA(LF,MCP) PW : 54-CSP(LF,DDP) 60: CL 1:W TW Low, W WPOP.100Y. E : 90-FBGA_S TW 2 : 90-FBGA(DDP) F M. Q : ISM F: W.1 Y.COM Commercial, Low, i-TCSR & PASR &W. 0Y.COM CL 3 W OLGA(LF) W DS 0 75: 133MHz, CL.3 W R : 54-FBGA E: Extended (-25~85C), Normal 3 : 90-FBGA(DDP,LF) W WW.TW 1 80: 125MHz, CL WW.100Y.CG :: 90-FBGA_S(LF,HF)J : MT.TW 1H: 105MHz, 4 : 96-FBGA H S : 90-FBGA_L W.1 N: OMExtended, Low, i-TCSR & PASR &WW.CO CL 3.TW OM W Y 5 : 96-FBGA(LF) WBGA T : TSOP2-400 Extended, Low, i-TCSR W W 001L: 105MHz,CL 2 & WW.100Y.C G:Industrial (-40~85C), Normal DS.TW WW.100Y.C60-CSP(LF,HF,OSP) V : WBGA(LF) I: 66MHz, 6 : MCP(LF,HF) K: W.1 15:Y.COM 3 W M.T OM Low 9 : 90-FBGA(LF,OSP) L 90-FBGA_SSD(LF,HF) WW 00Y.C P: Industrial, W 0 WW.10Mobile-DDR M.T WW 00Y.:CO.TW Y : 54-CSP(DDP) W W H: Industrial, Low, i-TCSR & PASR & DS A : FBGA(LF,TDP) M.T.1 W C3: 133MHz,O 3 M.1 M : FBGA(MCP) CL B : 54-CSP(LF,HF) W WW 00Y.CO.TW.CO.TW WW.100Y.C CL 3 M.TW W C2: 100MHz, Y W W from.each different generation by density. M.1 W C0: 66MHz, CLO 3 It will be applied W OM W1.CO.TW WW.100Y.C M.TW (Halogen Free: 128Mb:14th, 256Mb:13th, 512Mb:8th,1Gb:5th generation)WW 00Y WW.100Y.C M.TW O W OM W.1 O Mobile DDR SDRAM W WW.100Y.C M.TW W WM : 152-FBGA(POP,HF,LF).100Y.C M.TW Y.C WW W 1 : MCP 8: 0 O W.1090-FBGA(LF,HF) M.T N 168-FBGA(LF,POP,HF) W O 2 : 90-FBGA(DDP).CO Y.C WW.100Y.C M.TW WW 9 :: 110-FBGA(LF,HF).TW: 60-FBGA(LF,DDP,HF)W W.TW W 3 : 90-FBGA(LF,DDP,HF) A 168-FBGA(LF,HF,DDP) P: 100 00Y M. O W 4 : 96-FBGA : : ISM WF.160-FBGA(LF,HF)OM QW WW 00Y.CO.TW WW.100Y.C M.TW 5 : 96-FBGA(LF,HF)WW G : 60-LGA(LF) 0Y.C M.TR : 102-FBGA(HF,LF) W 0 O W OM W.1 K :.1 : 6 : FBGA(POP,LF,HF) WW.100Y.C M.TW WW104-FBGA(LF,HF) O.STPOP(DDP) W Y.C WW.100Y.C M.TW 7 : 90-FBGA L : WBGA(0.8MM) W O W M.100 O W WW.100Y.C M.T WW 00Y. by O.TW It will be applied from each different generation Cdensity. WW.100Y.C M.TW W 256Mb:13th, 512Mb:8th,1Gb:5th generation) O (Halogen Free: 128Mb:14th, W M.1 O W WW.100Y.C M. WW 00Y.CO.TW WW.100Y.C M.TW W Mobile DDR O W O W OM W.1 SDRAM PEA WW.100Y.C M WW.100Y.C M.TW WW.100Y.C M M.TW 1 : POP MONO F : 60-FBGA(LF) POP-SAC105(LF,DDP) O W O W O :ISM 6 : POP MONO(LF,HF) H : ISM W WW.100Y.C W Y.C Q ::POP(DDP) W WW.100Y.C M.TW W 7 : 90-FBGA (10X10mm,1-side)00 S M.T W.1 O W 8 : 90-FBGA(LF) K : 72-FBGA(LF) X : POP(LF,DDP,HF) WW WW 00Y.CO.TW WW.100Y.C M.TW A : FBGA(LF,TDP) L :W 60-FBGA M.1 O W WW 00Y CO.TW WW.100Y.C M.TW It will be applied from each different generation by density. W O (Halogen Free: 128Mb:14th, 256Mb:13th, 512Mb:8th,1Gb:5th generation) W OM W.1 WW.100Y.C WW.100Y.C M.TW W O W WW WW.100Y.C M.TW O W Y.C WW.1002009 M.TW www.samsung.com/semi/dram 11 JANUARY Mobile SDRAM O W WW.100Y.C

O W Y.C 100 M.T W.CO.TW WW.100Y OM W COMPONENT DRAM ORDERING INFORMATIONWW.100Y.C M.TW W M.T O W C 11.3 O 4TW 5 WW.7 00Y.C8 M.TW 10 0Y. WX W.1 Y.COM W XX CO X W X. K W4 T XX X W XX W.T 00Y X W M.T.100 W.1 Y.COM W O W WW.100 WW.100Y.C M.TW M.T Speed SAMSUNG Memory.TW W M O W CO.CO Temp & Power WW.100Y.TW YDRAM.TW WW.100Y.C M.TW OM W M.100 Package Type WW 00Y.CO.TW.CO WW.100Y.C M.TW WW 00DRAM Type.TW Y W Revision M.1 O 1 Density M W. O W Interface (VDD, VDDQ) WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.C M.TW O W O W OM W.1 Bit Organization WW.100Y.C M.TW Number of Internal Banks WW.100Y.C M.TW WW.100Y.C M.TW O W W.CO.T WW.100Y.C1 : 1.1ns.(900MHz) TW WW 00Y.CO.TW XDR DRAM WW.100YDDR2 SDRAM W W OM (183MHz).1 J: BOC(LF)OM OM (200MHz @ CL=3, tRCD=3,W W W P: BOC 55: Y. DDR2-400 WW.100Y.C 5.5ns.TW WW.100CC:C M.TW WW.100Y.C M.TW OM tRP=3) 12: 1.25ns (800MHz) W O W W Mobile.DRAM WW 0D5: DDR2-533 (266MHz @ CL=4, tRCD=4, CO W 0Y.C6.0nsM.TW Y.C W W (166MHz) WW.1Leaded / LeadM.TW.10 60: 00Y M.T.O Free WW 0014:.CO (700MHz) W.C Y 1.4ns.TW WW 00tRP=4)O.TW Y W W G/A: 52balls Mono 1 WW.100Y.C FBGAM.TW M @ 1.6ns (600MHz) W.1E6: DDR2-667 (333MHz WCL=5, tRCD=5, WW. 16:Y.COM W WR/B: 54balls.CO Mono W CO FBGA W 0 Y. W W. W W.10SDRAM (DefaultT tRP=5) 00Y BOC Mono.T M.T.100 OM CL=3) W X /Z: W.1 54balls.COM W.C (400MHz @ CL=6, Y.C WWF7: DDR2-800 O.TW tRCD=6, WW Y 00 (200MHz.TW Y W Mono WW J /V:.60(72)balls FBGAM.T 0.5pitch M.W.150: 5.0ns.COM CL=3) W tRP=6)Y. O O 0.8pitch W 60:00Y (166MHz CL=3) W 6.0ns.TW Y.C WW E7: DDR2-800C M@TW tRCD=5, W WWL /F: 60balls FBGA MonoM.TW.100 (400MHz. CL=5, 100FBGA O W.1 6.7nsY.COM W. O W S/D: 90balls 67: W.C WW.100 WW tRP=5) 0Y.C M.TW WW.10(11mm x 13mm) W M.T Monolithic 0Y 75: 7.5ns PC133 (133MHz CL=3).10 M.T O W O WW 00Y.CO.TW W 90balls.FBGA Mono W.C W XDR.1 F/H: DDR3 WW SDRAM.TW 00Y WWSmaller100Y C M.T M W DRAM. CSP DDP O OM W.1 (400MHz @ CL=6, tRCD=6, WA2: 2.4Gbps,Y.CO.TW W Y/P: 54balls F7: DDR3-800 Y.C W W.C W W tRP=6).100 WW.FBGA Y M.100 36ns, 16Cycles.TW M.T M/E: 90balls 100 DDP W B3: 3.2Gbps, 35ns, 20Cycles OM WW 00Y.CO.TW W.CO CL=7,TW W.C Y @. tRCD=7, W W W W DDR3-10660(533MHz M F8: W 0 Y C3: 3.2Gbps, 35ns, 24Cycles.OM 10. Temp & Power0 COMMON.T W.1 W.1 - Y.COM W tRP=7) WW 00Y.CO.TW WW.100Y.C M.TW C4: 4.0Gbps, 28ns, 24Cycles W W Power)100 (Temp,W.1 O W M.T G8: DDR3-1066 (533MHz COM tRCD=8, W. DS: Daisychain 0Y. WW 00Y. @ CL=8,.TW CO & Normal WW.1SampleC M.TW 0 W WW.1 (0C. C: Commercial, Normal00Y 95C) tRP=8).TW O W OM W.1 OM Mobile-SDRAM Y.C W Power WW H9: DDR3-1333 (667MHz @C WW.100 WW.100Y. CL=9, tRCD=9,.TW 0Y.C M.TW W M.T 60: 166MHz, CL 3 W.10 OM CO C: (Mobile Only) Commercial (-25 ~ 70C), tRP=9) WW W Y. Y.C WW 00Y.CO.TW.TW W 75: W 133MHz, CL.100 3.TW Normal W Power K0: DDR3-1600 (800MHz @ CL=11, tRCD=11,.100 OM W3 M.1 OM W O W 80: 125MHz, CL W Y.C WW.100Y.C M.TW J: Commercial, Medium tRP=11) W W WW.100Y.C M.TW M.T.100 W 1H: 105MHz, CL 2 O W.CO.TW O L: Commercial, LowWW 95C) & Low Power (0C WW W Graphics Memory.100Y.C M.TW 1L: 105MHz, CL 3.100Y Y.C WW L: (Mobile Only)W Commercial,.Low, i-TCSR OM 100 W M.T WW 00Y.CO.TW 15: 66MHz, CL 2 & 3 100Y.C WW. WW PASR 0Y.CO.TW18: 1.8ns (550MHz).TW W F: Commercial, Low, i-TCSR & 0 & DS W M 04: 0.4ns (2500MHz) W.1 OM 1 W O OM W. E: Extended (-25~85C), Normal WW.100Y.C M.TW WW.100Y.C M.TW Mobile-DDR 20: WW.100Y.C M.TW 2.0ns (500MHz) O N: Extended, Low, i-TCSR O W.CO.TWC3: 133MHz, CL 3WW 00Y.C 05: 0.5ns (2000MHz) WW W.TW W W 00Y WW. DS.C M.T22: 2.2ns (450MHz).1 G: Extended, Low, i-TCSR & PASR & 100Y C2: 100MHz, CL 3 M.1 OM W O W O W I: Industrial, Normal (-40C 85C) & Normal.C WW.100Y.C M.TW C0: WW.100Y.C M.TW 66MHz, CL 3 WW.100Y 5C: 0.56ns.TW (1800MHz) O W Power or Halogen-free product are in OM 25: W Y.C WW 00Y.CO.TNote: All of Lead-freeWW W.TW W compliance with RoHS WW& Low.PowerY.C M.T2.5ns (400MHz) W.00 P: Industrial, Low (-40C 85C) M. OM 1 W O W O 06: 0.62ns (1600MHz) W WW.100Y.C M.TW H: Industrial, Low, i-TCSR & WW DS PASR & Y.C 2C:.2.66ns (375MHz) WW.100Y.C M.TW TW O 100 W. O W OM WW.100Y.C M.TW WW W 0Y.C M.TW 11. Speed (Wafer/Chip Biz/BGD: 00) 00Y.C 6A: 0.66ns (1500MHz) WW W.10 O W M.T (350MHz).1 2A: WW 00Y.CO.TW WW.100Y.C M.T WW 00Y.CO 2.86nsW W T (1400MHz) W DDR SDRAM 07: M. O W.1 OM W.1 O0.71ns WW.100Y.C M. WW 0 CC: DDR400 (200MHz @ CL=3, tRCD=3, tRP=3) 0Y.C 3.3ns (300MHz) W WW.100Y.C M.TW 33: W O 1 W M.T O W B3: DDR333 (166MHz @ CL=2.5, tRCD=3, W. C 0.77ns (1300MHz).7A:O.TW WW.100Y.C M W WW.100Y.C M.TW 0Y 36: 3.6ns (275MHz) W 0 tRP=3) *1 O W O W W.1 Y.COM W WW.100Y.C WW.100Y.C M.TW A2: DDR266 (133MHz @ CL=2 , tRCD=3, W tRP=3) W (1200MHz) W.100 08: 0.8ns M.T O W O B0: DDR266 (133MHz @ CL=2.5, tRCD=3, WW 40:.4.0ns (250MHz) WW YC WW.100Y.C M.TW 0 W.TW M.10 09: 0.9ns (1100MHz) tRP=3) O W WW 00Y.CO.TW WW.100Y.C M.TW W Note 1: "B3" has compatibility with "A2" and "B0" 45: 4.5ns (222MHz) O W OM W.: Y. (1000MHz) WW.100Y.C 0 WW.101.0nsC M.TW W W 50/5A: 5.0ns O (200MHz) WW WW.100Y.C M.TW O W Y.C WW.1002009 M.TW www.samsung.com/semi/dram 13 JANUARY DRAM Ordering Information O W WW.100Y.C

O W Y.C 100 M.T W.CO.TW WW.100Y OM W MLC NAND Flash W WW.100Y.C M.TW M.T O W MOQ.CO.TW WW.100Y.C M.TW 0Y M.10 Part Number W Family Density Technology Package Type WOrg. Vol(V) O Tray T/R Remarks O W Y.C W TW WW.100Y.C M.TW M.-xxxx0xx.100 -xxx0Txx O W W.CO. TSOPWW.103.3Y.C M960 W.T W x8 1,000 WW.1K9MDG08U5M-PCB0TW 00Y W M.T 128Gb DSP OM WELP W K9MDG08U5M-ZCB0 W CO 960TW 1,000 W.C W x8 3.30Y. CO. Y W W M.10.TW 100 00Y M.T W.K9HCG08U1M-PCB0 TSOP1 x8 WW 3.3 Y.CO 960 1,000 W.1 Y.COM 64Gb QDP CO Y. W W.TW W WW K9HCG08U1M-IIB0 M.TW.100.100 ULGA x8 3.1,000 OM 10016Gb basedM.T W. O W O 51nm WW 3.3100Y.C 960M.TW 1,000 WW 04KByte/Page.TW 0Y.C Y.C WW K9LBG08U0M-PCB0 MTSOP1 TW. x8. O M.1 Cache W.1 Y.C WW 00Y.C720.TW2,000 WK9LBG08U1M-IIB0 O ULGA W WW 00Y.CO 32Gb DDP x8 W 3.2CE W.T 00 W TW M. W.1 W.1 Y.COM W.CO.TW OM W K9GAG08U0M-PCB0 TSOP1 x8 WW 3.3 1,000 Y 960 W WW.100.T WW.100Y.C 16Gb.mono.OM 2,000 MT K9GAG08U0M-IIB0.COM ULGA x8 3.3W W O W W Y WW.100Y.C M.TW WK9HBG08U1B-PCB0 TSOP1.TW WW.100Y.C 32Gb QDP W59nm M.100 x8 3.3 W 960 O 1,000 M.T O W WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.C M.TW qualify B-die part W W 960.CO 1,000W K9LAG08U0A-PCB0 TSOP1 3.3W # K9LAG08U0BW.1 Y.COM 51nm Y WW 00Y.CO.TW x8 W.T 00 W WW.100 16Gb DDP.TW M.1 W.1 Y.COM W PCB0000 M W O W.CO 8Gb WW.100 59nm K9LAG08U0B-PCB0 00Y 3.1,000 WW.1 TSOP1 M.TWx8 WW Based 00Y.C M.TW M.T 2KByte/Page W.1 O W CO O WW.100Y. WW.TW qualify B-die, part WW. 00Y.C.TW WW/O Cache.100Y.C M.TW K9G8G08U0A-PCB01 TSOP1 OM x8 3.3 1,000 W960 Y.COM W# K9G8G08U0BW O 51nm W WW.100 WW.100Y.C M.TW WW.100Y.C M.TW 8Gb mono M.T PCB0000 W W ULGA.CO.CO.TW O W K9G8G08U0A-IIB0 x8 3.3 WW 960.100Y 2,000 M WW.TW 00Y WW.100Y.C 59nm.TW K9G8G08U0B-PCB0.1TSOP1 O W M 3.1,000 OM x8 W O W WW.100Y.C M.TW WW.100Y.C M.TW WW.100Y.C M.TW qualify B-die, part O W O W O 960 1,000 # W WW.100Y.C M.TK9G4G08U0BWW4Gb mono.C63nm.TWK9G4G08U0A-PCB0 TSOP1 0Y.C x8.TW 3.3 Y WW.10 W 4Gb based O PCB0000 W M.100 OM W W CO WW.100Y.C M.TW WW TSOP1 00Y.C x8M.TW3.3 K9G4G08U0B-PCBWW.100Y.51nm M.TW.1 W 1,000 O O O W SamsungY.Crepresentative for latest product offerings. W W W Y.C WW.100Y.C M.TW Please contact your local W W WW. 0 sales M.T.100 O Note: All parts are lead free10 W M.T W WW 00Y.CO.TW CO WW.100Y.C M.TW W WW.100Y.TW O W OM W.1 OM W WW.100Y.C M.TW WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.C M.TW W O W O W OM W.1 WW.100Y.C M.TW WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.C M.TW W O W O W OM W.1 WW.100Y.C M.TW WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.C M.TW W O W O W OM W.1 WW.100Y.C M.TW WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.C M.TW W O W O W OM W.1 WW.100Y.C M.TW WW.100Y.C M.TW WW.100Y.C M.TW O W O W O W WW.100Y.C M.TW WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.C M.TW W O W O W OM W.1 WW.100Y.C M.T WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C M. WW 00Y.CO.TW WW.100Y.C M.TW W O W O W OM W.1 WW.100Y.C M WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C WW 00Y.CO.TW WW.100Y.C M.TW W W O W OM W.1 WW WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C WW.100Y.C M.TW W O W WW WW.100Y.C M.TW O W Y.C WW.1002009 M.TW www.samsung.com/semi/flash 15 JANUARY MLC NAND Flash O W WW.100Y.C

O W Y.C 100 M.T W.CO.TW WW.100Y OM W Solid State Drives (ssd)* W WW.100Y.C M.TW M.T O W Application Interface Connector.CO.Size WW Den.00Y.C Comp.TW Part Number 0Y TW M.10 OM W.1 32GB MCBQE32G8MPP-0VA00 WW 00Y.CO 1.8" W Thin uSATA WW.100Y.C 8Gb M.TW W.T M.1 64GB MCCOE64G8MPP-0VA00 O W WW 00Y.CO.TW WW 32GB.100Y.C M.TW W SATA W II MCBQE32G5MPP-0VA00.T W W.1 PS410 OM CO SLC 2.5" Thin SATA OM W WW.100Y.8Gb M.TMCCOE64G5MPP-0VA00 W Y.C WW.100Y.C M.TW 64GB 3.0Gb/sec O W M.T.100 O W.C W MCBQE32GFMPP-MVA00 WW 00Y.CO.TW.TW WW.100Y.C SLIMM.TW uSATA W32GB.100Y 8Gb OM 1 W M. O W (caseless).C 64GB MCBQE64GFMPP-MVA00 WW.100Y WW 00Y.CO.TW.TW WW.100Y.C M.TW OM W M.1 O W 64GBW.C MMCRE64G8MPP-0VA00 O W C W.TW 00Y WW.100Y.1.8" M.TW uSATA Thin 16Gb WW.100Y.C M.TW W.1 Y.COM W 128GB W MMCQE28G8MUP-0VA00 O W W.CO W WW.100Y.C M.TW 100 WW.PC/Notebook M.TW M.T.16Gb 00Y 64GB MMCRE64G5MPP-0VA00 W WW 00Y.CO.TW W 1 Y.CO. O ThinW PM410 2.5"C SATA W WW.100Y.T WW.100 128GB MMDOE28G5MPP-0VA00 M.1.TW OM W OM WW 00Y.CO.TW W W W.C Y.C W 64GB W MMCRE64GFMPP-MVA00 WW.100Y SLIM M.TW M.T.100 W.1 CO OM SATA II W. WW (caseless)CO uSATA W 128GB WW16Gb 100Y.MMCQE28GFMPP-MVA00 MLCW W.TW 0Y Y.C W W M.T.10 OM W. 3.0Gb/sec M.T.100 O W O W MMCRE64G5MXP-0VB00 WW.100Y.C M.TW WW.100Y.C M.TW 64GB WW.100Y.C M.TW O W O SATA W 2.5" Thin 128GB O W W Y.C W16Gb.100MMCRE28G5MXP-0VB00.TW WW.100Y.C M.TW WW.100Y.C M.TW OM W MMDOE56G5MXP-0VB00 PM800 256GB O W O W WW.100Y.C M.TW WW.100Y.C M.TW WW.100Y.C M.TW 64GB O W MMCRE64GFMXP-MVB00 SLIM W.CO 16Gb W WW.100Y.C M.TW WW 00Y.CO.TW (caseless) WW.100YuSATA M.T128GB W O W MMCRE28GFMXP-MVB00 M.1 Y.C WW 00Y.CO.TW WW MCBQE25G5MPQ-0VA03 W WW 00Y.CO.TW 25GB W W M.T.100 SS410 2.5" W.1 Thin SATA M 8Gb W.1 O 50GB.CO.TW OM W WW MCCOE50G5MPQ-0VA03 00Y WW.100Y.C M.TW WW.100Y.C II M.TW W.1 Y.COM W SATA O O 50GB W W MCBQE32G5MPQ-0VA03.T W Server/Storage 3.0Gb/sec 2.5" 8Gb W WW.1Thin Y.C M.TW 00 SATA WW.100Y.C M.TWSS415 M.100 64GB MCCOE64G5MPQ-0VA03 O W WW 00Y.CO.TW W SLCY.CO W Y.C 50GB.TW W MCBQE50G5MXP-0VB03 M W W WW.100 M.100 O W.1 M.T SS800 2.5" SATA W WW Thin 00Y.CO.TW 8Gb CO WW.100Y.C M.TW W 100GB MCCOE00G5MXP-0VB03 W Y. W 0 W.T 0 O W OM W.1 OM W.1 MMAGE08GSMPP-MVA00 WW.100Y.C M.TW WW.100Y.C8GB M.TW WW.100Y.C M.TW W W UMPC/Low-Cost PC SATA II MLC UM410 HALF SLIM Thin SATA 16GB 16Gb MMBRE16GSMPP-MVA00 O CO WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.32GB M.TW W MMCRE32GSMPP-MVA00 CO W M O W W.1 W.CO.TW WW.100Y. WW.100Y.C M.TW *Please contact Marketing for the latest00Y WW.1 offerings. M.T W O W.CO.TW OM W WW.100Y WW.100Y.C M.TW WW.100Y.C M.TW OM W O WW 00Y.C W WW.100Y.C M.TW WW 00Y.CO.TW W W M.T.1 O W W.1 Y.COM W WW 00Y.CO.TW WW.100Y.C M.TW W W W M.1 O W M.T.100 WW 00Y.CO.TW WW.100Y.C M.TW WW 00Y.CO.TW W W O W M.1 OM W.1 WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.C M.TW W O W O W OM W.1 WW.100Y.C M.TW WW.100Y.C M.TW WW.100Y.C M.TW O W O W O W WW.100Y.C M.TW WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.C M.TW W O W O W OM W.1 WW.100Y.C M.T WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C M. WW 00Y.CO.TW WW.100Y.C M.TW W O W O W OM W.1 WW.100Y.C M WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C WW 00Y.CO.TW WW.100Y.C M.TW W W O W OM W.1 WW WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C WW.100Y.C M.TW W O W WW WW.100Y.C M.TW O W Y.C WW.1002009 M.TW www.samsung.com/semi/flash 17 JANUARY SSD O W WW.100Y.C

O W Y.C 100 M.T W.CO.TW WW.100Y OM W Synchronous Pipelined Burst and Flow-Thru.100Y.C M.TW W WW M.T Operating Vdd (V) W O Density Organization Part Number # PinsSpeed I/O Production Comments.CO.TW WW Access 0Y.C M.TW 0 tCYC 0Y Package Time Voltage Status.1 M Mode.10 O W O W (MHz) WW tCD (ns) 0Y.C M.(V) W T WW.100Y.C M.TW.O 3.3, 2.5 Mass Production K7A321830C 100-TQFP SPB 3.3, 2.5 WW 3.1 2E1D W.C CO W 2Mx18.TW 00Y 0Y. WW.TW.TW K7B321835C.10 100-TQFP M SB 3.3, 2.5 7.5 W.COM 2.5 3.3, Mass Production Ind Temp only M O W W 36Mb W 3.3, 2.5 WW.10200.CO.TW 0Y Y.C WW K7A323630C.100 100-TQFP M.T SPB 3.1 2E1D M.T 00Y O3.3, 2.5 Mass Production W M.1 WW 00Y.CO SB.TW 3.3, 2.5 WW 0Y.C 3.3, 2.5TW Production WW 00Y.CO 1Mx36W K7B323635C 100-TQFP 7.Ind Temp only. Mass 0 W.T M.1 W.1 Y OM W.1 Y.COM W. K7A163630B 2.6, 3.5 Mass 2E1D WW 100-TQFPCO SPB.TW 3.3, 2.5 WW 250, 167.C 3.3, 2.5.TW Production Y W W M.100.T 512Kx36 SPB 3.3, 3.3, Mass 2E2D W.1 Y.COM W K7A163631B WW.100-TQFP.COM W 2.5 3.1 WW200 00Y.CO2.5.TWProduction Y W W W.T 3.3, 2.5 7.5 W.T.K7B163635B 100-TQFP SB M 117 2.5 W.1 Y3.3,OM Mass Production O W.C OM W W.TW WW 100-TQFP Y.CSPB M.TW 2.5 2.6, W 250,.3.3, 2.5 MMass Production 10 WW.18Mb Y.C M.TW K7A161830B 3.3, 3.5 2E1D 00.100 O 1 W O W W W2.5 3.1 WW.100Y.C M.TProduction WW 00Y.CO.TWK7A161831B WW 100-TQFP 0Y.C 1Mx18 3.3, 200 3.3, 2.5 Mass 2E2D 0 SPB M.T W O 3.3, 2.5 7.5 W.1 WW 00Y.CO Mass.TW W.1 Y.COM W K7B161835B WW 100-TQFP 0Y.C SB 117 3.3, 2.5 Production W W WW.100.1.T M.T.10 OMfor OM K7A803609B 100-TQFP 250 W W WW 00SPB.CO 3.3TW 2.6 Y WW.13.3,2.5.C NotM.new designs 2E1D TW W W 00Y Y.C W W M.100256x36 OM.TK7A803600B 100-TQFP.1 SPB 3.3 3.5 167WW 3.3,2.5.CO for new designs Not 2E1D O W W Y W WW 00Y.C.Tdesigns W 0 WW.10SB Y.C 3.3.TW 6.W.T K7B803625B 100-TQFP 133 OM 1 W.3.3,2.5 Not for new OM W OM 8Mb W. WW 3.3,2.50Y.C for M.TW 2E1D W W 0 Y.C WW.100Y.C 3.3M.TW 100-TQFP SPB 2.Not new designs K7A801809B W W.1 M.T.100.CO.TW 2E1D WW SPB00Y.CO.TW 100-TQFP 3.3 3.5 167WW 3.3,2.500Y for new designs Not WW 512x18Y.CO K7A801800B W W TW.1 OM W. M.10 OM 6.5 100-TQFP W 3.WW3.3,2.5 0Y.C new designs WW 00Y.CO K7B801825B W 0 Not for M.TW WW SB.100Y.C M.TW W W.1 Y.CO M.T.1 K7A403609B 100-TQFP SPB 3.3 2.4 3.3, 2E1D WW 00Y.CO.TW 250 WW 2.5 10Not for new designs W 0 WW 00Y.CO.TW W SPB.1 W M.T. Not for new designs 2E1D K7A403600B 100-TQFP 3.3 OM3.3.3, W.1 W OM W2.5 00Y CO 128Kx32 W3.3, 2.5.1Not for.new designs.TW WW 00Y.CK7B403625B W 100-TQFPWW 0Y.C M.TW 133 SB 6.5 W.T 10 3.3 OM W W.1 Y.COM W 100-TQFP WW. 0Y.CO 3.5 W new WW.Not forY.Cdesigns.TW K7A403200BT SPB 3.3 3.3, 2.5 4Mb WW W M 2E1D. 00 M.T W.1 3.3 Y.CO2.4 WWNot for0Y.CO 2E1D W.1 Y.COM W 100-TQFP W K7A401809B SPB 3.3, 2.5 new designs W WW.100.TW250 WW.100 M.T.10 M.T 100-TQFP OM CO 2E1D W 256Kx18 K7A401800B SPB W 3.3 3.3.3, 2.5 W for new designs Not O W WW.100Y. Y.C WW.3.3 0Y.C 6.5 M.TW WW.100K7B401825BM.TW M.T 10 100-TQFP SB 133 3.3, 2.5 W W.C O WNot for new0designsO.TW W CO W 0 Y WW.100Y.TW WW.100Y.C M.TW NOTES: All TQFP products are Lead Free W.1 Y.COM W OM W 2E1D = 2-cycle Enable and 1-cycle O Disable W WW.100 WW.100Y.C M.TW 2E2D = 2-cycle Enable and 2-cycle Disable.TW WW.100Y.C M M.T O W SPB speed recommendations: For 200MHz use 250MHz; For 133MHz use 167MHz O WW 00Y.CO.TW W C W WW.100Y. SB speed recommendation: Use 7.5ns Access Time use 6.5ns Access Time.TW WW.100Y.C M.TW M.1 OM W O WW 00Y.CO.TW W.C W C W W W 0Y Y. W TW W M.10 OM W.1 M.T.100 WW 00Y.CO.TW WW.100Y.C M.TW WW 00Y.CO.TW W W O W OM W.1 W.1 Y.COM W WW.100Y.C M.TW W WW.100Y.C M.TW W O W M.T.100 O W WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.C M.TW W O W M.1 O W WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.C M.TW W O W O W OM W.1 WW.100Y.C M.TW WW.100Y.C M.TW WW.100Y.C M.TW O W O W O W WW.100Y.C M.TW WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.C M.TW W O W O W OM W.1 WW.100Y.C M.T WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C M. WW 00Y.CO.TW WW.100Y.C M.TW W O W O W OM W.1 WW.100Y.C M WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C WW 00Y.CO.TW WW.100Y.C M.TW W W O W OM W.1 WW WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C WW.100Y.C M.TW W O W WW WW.100Y.C M.TW O W Y.C WW.1002009 M.TW www.samsung.com/semi/sram 21 JANUARY Synchronous SRAM O W WW.100Y.C

O W Y.C 100 M.T W.CO.TW WW.100Y OM W QDR SYNCHRONOUS SRAM W WW.100Y.C M.TW M.T Vdd O W Type Density Organization Part # I/O Comments.CO Pins-.TW (V) Access Time 00Y.C Time.TW Voltage Production WW.1 Cycle M (V) 0Y Package Number tCD (ns) W (MHz) O Status M.10 W.C W.CO. 1.8 WW 8M x9 WW K7R640982M 0.45,0.45,0.50.100Y 250,200,167 M.T 1.5,1.8 Mass Production QDR II-2B 00Y 165-FBGATW M.1 O W W.C W CO W K7R641882M 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II-2B W 00Y WW.100Y. 165-FBGA.TW M.T.TW W.1 300,250,200,167 1.5,1.8 M72Mb 4M x18 OM 1.8 W CO K7R641884M 165-FBGA 0.45,0.45,0.45,0.50 Mass Production QDR II-4B O W WW.100Y. W Y.C WW.100Y.C M.TW M.T K7R643682M 165-FBGA 1.8 0.45,0.45,0.50 W 250,200,167 O 1.5,1.8 Mass Production QDR II-2B M.T.100 O W 2M Y.C WW.100Y.C WW 00Y.CO.TW x36 WW.100165-FBGA M.TW 0.45,0.45,0.45,0.50 300,250,200,167 M.TW Mass Production QDR II-4B K7R643684M 1.8 O 1.5,1.QDR II OM W. O W WW 300,100Y.C 1.5,1.8 W Mass Production QDR II-2B WW 00Y.C W x9 WW. 0Y.C M 4M K7R320982C 10165-FBGA 1.8.TW 0.45 250, 200 M.T.T W 165-FBGA O1.8 WW 250, 200.CO.TW Mass Production QDR II-2B W.1 Y.COM W.C K7R321882C 0.45 W 300,.100Y 1.5,1.8 WW.100Y.TW WW.100.T x18 2M OM W 165-FBGA COM W OM WW300, 250 Y.C1.5,1.8.TW Production QDR II-4B 36Mb K7R321884C 333, Mass W. 1.8.T 0.45 W.C W W 00 W 00Y 1.8 WW.100Y W.1 Y.COM W Production QDR II-2B M.T K7R323682C W.1 165-FBGA COM 0.45 300, 250, 200 1.5,1.8 Mass O 1M x36 W Y WW.100.T Mass Production QDR II-4B WW 165-FBGA. 1.8 M.TW WW.100Y.C M.TW K7R323684C 0.45 333, 300, 250 1.5,1.8 M.100 O W O WW 00Y.CO.TW W W WW.100.C TW 250,200,1671 1.5,1.8 M Mass Production QDR II - 2B WW.100Y.C 2M x9TW K7R160982B 165-FBGA Y1.8 M.0.45,0.45,0.50. M. O W O WW 001.5,1.8O Mass Production QDR II - 2B W W Y.C W165-FBGA00Y.C W 1.8 0.45,0.45,0.50 250,200,167 W.TW WW.100Y.C M.TW K7R161882B M.T.1 W.1 1.8.COM W.C O WW 01.5,1.8 O Mass Production QDR II - 4B W K7R161884B 165-FBGA 0.45,0.45,0.45,0.50 300,250,200,167 0Y W.TW WW.100Y WW.100Y.C1M x18.TW M.T W.1 1.5,1.8.COM Production QDR I - 2B M K7Q161862B 165-FBGA 1.8v / 2.5vO2.Mass W W O W WW.100Y 0.C WW.11.8vY2.5v 2.5M.TW QDR WW I, 18Mb0Y.C M.TW M.T K7Q161864B 165-FBGA 0 / 167.10 W QDR II W O WW 1.5,1.8Y.COMass Production QDR I - 4B CO W.TW 00 WW.1.8 0Y. 0.45,0.45,0.50.TW WW.100Y.C M.TW K7R163682B 165-FBGA 10 250,200,167 1.5,1.8 Mass Production W.1 Y.COM W QDR II - 2B OM W O W C WW.10 K7R163684B 165-FBGA 1.8 00Y. 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.80 Mass Production QDR II - 4B Y.C WW.1.TW WW.100512K x36 M.TW M.T OM O K7Q163662B 165-FBGA W / 2.5v Y.C WW 00Y.CO Production QDR I - 2B W W Mass W 1.5,1.8 WW 1.8v 100 2.5.TW 167 WW.100Y.C M.TW M.T W.1 YMass Production W QDR I - 4B W 2.5 1.5,1.8.CO.T O K7Q163664B 165-FBGAW1.8v. / 2.5v Y.COM W 167 W W W.T 450, 400, 333W 1.5W.100 Mass Production QDR II + 4B 00 0.45 WW.11M0x36.C M.TW 0 Y OM K7S3218T4C 165-FBGA 1.8.1 OM W 36Mb W 400, 333 WW.100Y.CProductionTW II + 4B Y.C WW 2M00Y.CO K7S3236T4C 165-FBGA W W W 1.8 100.T 450, M. QDR x18 0.45 1.5 Mass.T QDR W W.1 x18 Y.COM W 165-FBGA 1.8 W. 0.45Y.COM W 400, 333 WWW 0Mass.CO.TW II + 4B II+ 0Y Production QDR K7S1618T4C 1.5 WW.100.T 450, WW 1M100 W.1 Y.COM W 18Mb M.T. W 0.45 Y.COM 450, 400, 333 O W x36 W 1.8 1.5 QDR W WW.1Mass ProductionM.T II + 4B 00 WW 512K100Y.CK7S1636T4CW 165-FBGA W M.T.100 M.T.2B = Burst of 2, 4B = Burst of 4 W NOTES: For QDR I, QDR II: O WW 00Y.CO.TW W CO. W Y.C WW.100 circuit M.TW For QDR W 200MHz WII (36Mb): C-die use 300, 250MHz or.TW instead of 167MHz using a stable DLLY M.1 M.100 O For QDR II (72Mb): 2B = Burst of 2 and 250MHz or 200MHz is recommended, 4BW = Burst of 4 and.300MHz or 250MHz is recommended WW 00Y.CO.TW W W CO2.5-clockTW can be supported with 450MHz speedY C W W 0 W TW For QDR II+: 2-clock latency0Y. supported. latency W M.10 OM W.1 M.10 WW 00Y.CO.TW WW.100Y.C M.TW WW 00Y.CO.TW W W O W OM W.1 W.1 Y.COM W WW.100Y.C M.TW W WW.100Y.C M.TW W O W M.T.100 O W WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.C M.TW W O W M.1 O W WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.C M.TW W O W O W OM W.1 WW.100Y.C M.TW WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.C M.TW W O W O W OM W.1 WW.100Y.C M.TW WW.100Y.C M.TW WW.100Y.C M.TW O W O W O W WW.100Y.C M.TW WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.C M.TW W O W O W OM W.1 WW.100Y.C M.T WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C M. WW 00Y.CO.TW WW.100Y.C M.TW W O W O W OM W.1 WW.100Y.C M WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C WW 00Y.CO.TW WW.100Y.C M.TW W W O W OM W.1 WW WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C M.TW WW.100Y.C M.TW O W O W WW.100Y.C WW.100Y.C M.TW W O W WW WW.100Y.C M.TW O W WW.100Y.C M.TW www.samsung.com/semi/sram JANUARY 2009 QDR I / II / II+ 24 O W WW.100Y.C

O W Y.C 100 M.T W.CO.TW WW.100Y OM W OneNAND W WW.100Y.C M.TW M.T O W OneNAND is a monolothic IC that combines a NAND flash.CO a NOR flash interface plus an SRAM buffer. Its ideal for high-performance, high-density applications. array with WW.100Y.C M.TW 0Y.TW 0 Density Part Number.1 Org. WW Voltage (V).CO Speed MOQ (Tray) Remarks OM W Y Temp. WW 00Y.CPackage.TW W W M.100 extended.T 83Mhz M KFG1216Q2B-DEB8000 63FBGA (9.5x12) X16 1.8 1,120 W.1 WW 00Y.CO.TW.CO W W WW.1 KFG1216U2B-DIB6000 00Y 63FBGAM.T (9.5x12) X16 W 3.3 1,industrial M 66Mhz O W. M.T W Y.C WW 00Y.CO (7x9).TW X16 WW CO. 512Mb 1.8 1,120 T W.100extended M.83Mhz.TW KFG1216Q2B-SEB67FBGA M 00Y W.C W.1 Y.COM W KFG1216U2B-SIB6000. 067FBGA (7x9) W X16 WWW 0industrialO 66Mhz CO 3.3 W 1,120 0Y W WW.10 Y.1 extended OM.T.T M.T 100 M. KFM1216Q2B-DEB8000 (9.5x12) X16 1.8v WW Muxed W 63 FBGA O.C 83Mhz W 1,120 W WW 00Y.CO.TW KFG1G16U2C-AIBY.C (10x13).TW X16 00Y WW. 0 FBGA M M.T.1industrial O66Mhz 3.3v 1,120 W O W OM W.1 WW.extended.C 83Mhz.TW 1,120 00Y WW.100Y.C M.TWX16 KFG1G16Q2C-AEBFBGA (10x13) 1.8v 0 WW.11Gb Y.C M.TW 0 W 1 Y.COM W O W O W extended W KFM1G16Q2C-DEB8000 FBGA.C X16 1.8v W 83Mhz.T 1,120 Muxed 00 WW 63 00Y(10x13) M.TW WW.100Y.C M.TW.1 OM 1,120 W.1 W63 FBGA Y.CO O W KFG2G16Q2A-DEB8000W (10x13) X16 1.8v WW extended 0Y.C 83Mhz W 0 W.TW 00 WW 2Gb 00Y.C M.TW M.T 1,120 W.1 1.8v Muxed CO Wextended 00Y.83Mhz.TW W.1 Y.CO KFM2G16Q2A-DEB8000 WW.FBGA (10x13) OM X16 Y.C W 63 FBGA (10x13) M.X16 TW 1.8v W extended WW 4Gb.DDP0.1.TW 0 KFH4G16Q2A-DEB8000 83Mhz M 1,120.100 O W O W W 1 Y OM WW.100Y.C M.TW WW.100Y.C M.TW 0 WW*T&R MOQ 2Kpcs.C M.TW O W.10 O **Please contact yourO Samsung sales representative forW product offerings & information on support & availability. local latest WW.100Y.C M.TW WWAll parts 0Y.Cfree.TW NOTE: are lead WW.100Y.C M.TW W O W M.10 O W WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.C M.TW W O W O W O W.1 Flex-OneNAND M WW.100Y.C M.TW WW.100Y.C M.TW WW.100Y.C M.TW W A monolithic IC with a NAND flash array using a NOR flash interface, Flex-OneNAND enables CO chip can.CO W.partitioning into SLC and MLC areas so theWW be configured for storage or high-speed access. WW 00Y.CO.TW WW.100YOrg. M.TW(V) Temp. W Speed.100Y (Tray).TRemarks W Density Part Number Package W MOQ OM W M.1 O Voltage W.CO.TW Y.C 1.8v.TW extended WW.100Y.C M.FSRW required T software WW WW.100YKFG4GH6Q4M-DEBFBGA (10x13).100X16 83Mhz W 1,120.CO OM W OM W W Y 4Gb Flex-OneNAND KFG4GH6U4M-DIBFBGA (10x13) 66Mhz 1,120 FSR software required.TW 0Y WW.10X16.C 3.3V.TW Industrial W 100 WW.100Y.C M.TW W X16 Y.COM Wextended 83Mhz W. 1,120Y.COM W SW req. O W KFM4GH6Q4M-DEBFBGA (10x13) 1.8v Muxed. FSR 0 WW WW.100 WW.100Y.C M.TW M.T M.T Industrial 66Mhz W.10 OFSR software required O 8Gb DDP Flex-OneNAND KFH8GH6U4M-DIBFBGA (10x13) W X16 3.3V O W 1,120 0Y.C W W W.TW W 0 Y.C WW.100Y.C M.TW *T&R MOQW 2Kpcs W.1 Y.COM W M.T.100 O W & information on supportWavailability. W **Please contact your local SamsungCO representative for latest product offerings WW.100 Y. sales.TW WW.100Y.C M.T & WW M.T NOTE: All parts are lead free.100 M W O WW 00Y.CO.TW W CO W WW.100Y.TW WW.100Y.C M.TW M.1 OM W WW 00Y.CO.TW W.C W CO W W W 0Y Y. W TW moviNAND. 0 W.T W.1 Y.COM.100 OM W.1 OM W Combining high-density MLC NAND flash with.C in a has an moviNAND storage WW 00Yan MMC controllerW single chip thatWWMMC interface,Y.C delivers dense, cost-effectiveWWfor embedded applications. M.TW 00.T 00 W W.1 Y.CO.1 Vol(V) OM.T W.1 Y.COM W W moviNAND Densities Package W Package Size WW Org.100.TW W.T WW.100Y.C M.TW.100 OM W 1GB 1.8/3.3 FBGA 12.0x18x1.2t x8 OM O W WW 00Y.C W WW.100Y.C M.TW WW 1.8/3.3 Y.C M.TW FBGA W 2GB 12.0x18x1.2t x8 W M.T.1 O 100. O W WW.100Y.C M.TW WW1.8/3.3 0Y.CO.TW FBGA WW 0Y.C M.TW 4GB 12.0x18x1.2t x8 W.10 O W M.10 CO WW 00Y.12.0x18x1.3tTW 8GB 1.8/3.3 x8 WW.100Y.C M.TW WW 00Y.CO.TW FBGA W. W O W M.1 OM W.1 16GB 1.8/3.3 14.0x18.0 x8 WW.100Y.C M.TW WW 00Y.CO.TWFBGA WW.100Y.C M.TW W O Please contact your local Samsung sales representative for latest product offerings. W O W OM W.1 NOTE: All parts are lead free WW.100Y.C M.TW WW.100Y.C M.TW WW.100Y.C M.TW O W O W O W WW.100Y.C M.TW WW.100Y.C M.TW WW.100Y.C M.TW O W O W OneDRAM WW.100Y.C M.TW WW 00Y.CO.TW WW.100Y.C M.TW W OneDRAM is a dual-port, low-power DRAM with an SRAM buffer interface and is optimal for high-performance, high-density mobile applications. O W OM W.1 WW 00Y.CO.TW WW.100Y.C M.T WW Org. 00Y.C M.TW Density Part Number Package Voltage Temp. W Speed.1MOQ Remarks O W.1 OM W WW.100Y.C M. WW 00Y.CO.(V)W 0 WW.(Tray) Y.C M.TW 0 W T W 1 Y.CO PKG Combination: 2G OneNAND + 512MbWW 512MB Y.CO W.1 Y.COM 216FBGA W MDDR +.100 WA-port:x16(SDR/DDR) 1.8V W extended WW KJA51Z23PC-AAO 133MHz 00 OneDRAM M.TW 0 W B-port:x16(SDR/DDR) M.T M.1 MCP P/N: KAC00F00JM (14x14).10 WW 00Y.CO W WW 00Y.CO.TW.CO.TW W W 512Mb WW.100Y M.1 PKG Combination: W.1 OM W WW 00Y.CO 2G NAND + 512Mb MDDRW512Mb 152FBGA A-port:x16(SDR/DDR) C W W+ W Y. 1.8V.TW W T KJA51Y23PC-AAO W (14x14) B-port:x16(SDR/DDR) M extended 133MHz WW.1 OneDRAMCOM.100 MCP P/N: KAR00900GM W Y. WW 00Y.CO.TW W W M.T.100 W.1 Y.COM W WW 00Y.CO W WW.100.T.1 OM W WW.C W W W.TW 00Y W.1 Y.COM W WW.100 www.samsung.com/semi/fusion Fusion Memory 28 M.T JANUARY 2009 WW 00Y.CO W.1

O W Y.C 100 M.T W.CO.TW WW.100Y OM W SN-T083A [Slot-in Type] Optical Storage W WW.100Y.C M.TW M.T O W Disk Format General Specifications.CO.TW WW.100Y.C M.TW 0Y 10 DVD-ROM, M 3.95GB, Data Transfer Rate MAX CO W - READ: MASTERED DISC, CD-R,W. W CD-RW,00Y.CODVD-RTW WW 00Y Write.TW W. DVD-R 4.7GB Authoring, DVD-R 4.7GB General, DVD-RW, Media Type W.1 Read M.1 OM DVD+R 4.7GB, DVD+R 8.5GB(Double-layer),Y.CO WW 00 W DVD+R WW.100Y.C8X (10.8MB/sec) TW. 8X (10.8MB/sec) W W DVD+RW 4.7GB, DVD-RAM 4.7GB.1 M.T OM W M.T 8X 8X (10.8MB/sec) W Y.C (10.8MB/sec) WW 00Y.CO.TW DVD+RW WW CO - WRITE: DVD 4.7GB(DVDR, DVDRW, DVD-RAM),.T W 00 Y. W M.1 DVD+R DUAL 6X (8.1MB/sec) 6X (8.1MB/sec) Double.LayerR,CD-R, CD-RW W.1 Y.COM W MT.100 O W W WW 00Y.CO.TW. WW.100Y.C M.TW DVD-R DUALW 6X (8.1MB/sec) 100 6X (8.1MB/sec)T M. WW 006X.CO.TW W.1 Y.COM W Y(8.1MB/sec) 8X (10.8MB/sec) WW 00Y.CO.TWDVD-R W W W.1 W.1 6X Y.COM W 8X (10.8MB/sec) M.T.100 DVD-RW (8.1MB/sec) OM W O W WW.100.T WW.100Y.C M.TW WW.100Y.C M.TW DVD-ROM (Single) W - Y.COM W 8X (10.8MB/sec) O W O W W W 8X (10.8MB/sec) WW.100Y.C M.TDVD-ROM (Dual) W WW.100Y.C M.TW M.T.100 O W CD-ROM O WW - 00Y.CO.TW 24X (3.6MB/sec) W.C W WW.100Y.TW WW.100Y.C M.TW.1 24X (3.6MB/sec) M 24X (3.6MB/sec) OM CD-R W.C O WW24X (3.6MB/sec)O.TW (3.6MB/sec) W W W.C Y.C W W W US-RW 00Y 0 Y W.T W M 24X.1.T 00 M.10 WW (1.5MB/sec) O.T24X (3.6MB/sec) W.1 Y.COM W 10X W Y.C WW 00Y.CO HS-RW W W 00 W WW.100 M.T.1 CD-RW 4X (0.6MB/sec).COM 24X (3.6MB/sec) W.1 Y M.T O W O W WW (6.75MB/sec).TW 00 WW.100Y.C DVD-RAMW 5X WW.100Y.C M.TW M.T W.1 Y.COM 5X (6.75MB/sec) O W O W Ultra Mode Multiword WW DMA100 2: 33.3MB/sec,.TW DMA mode2: WW.100Y.C DataM.TW transfer mode WW.100Y.C M.TW 16.6MB/sec, PIO Mode 4: 16.7MB/sec OM W. O W O W WW.100Y.C M.TW WW.100Y.C M.TW Interface Serial-ATA WW.100Y.C M.TW O W W CO 2M WW 00Y.Buffer Memory W CO WW.100Y.C M.TW W W Y. W T W M.1 O M.T.100 Drive Install HorizontalW WW 00Y.CO Form W WW (H) x 0Y.C M.TW WW 00Y.CO.TW W. W Size (W * H * L)T 128 (W) x 12.7.(D) without Bezel M.1 OM W.1 Buffer Protection WW 00Y.CO.TW yes W WW 00Y.CO.TW WW.100Y.C M.TW W OM W.1 M.1 Lead Free yes WW 00Y.CO.TW WW.100Y.C M.TW WW 00Y.CO.TW W W no O W W.1 Light Scribe OM W.1 Y.COM W WW.100Y.C M.TW W WW.100Y.C M.TW W O W M.T.100 O W WW.100Y.C M.TW WW 00 Storage SN-S083B Optical Y.CO.TW WW.100Y.C M.TW W O W.1 W OM.CO.TW Disk Format WW WW.100Y.C M.TW WW General Specifications 00Y 0Y.C M.TW W O W.10 OM W.1 1. DISC TYPE O WW.100Y.C M.TW WW CD-R, CD-RW, DVD-ROM, DVD+R 4.7GB, W Data Transfer.Rate MAX.TW W 0 Y.C W Media1TypeY C M W - READ: MASTERED DISC, 00. 0 Write O W Read M.T.1 W DVD+R DL 8.5GB, DVD+RW 4.7GB, DVD-R 3.95GB, WW 00Y.CO.TW(10.8MB/sec) WW 8X 00Y.C WW 00Y.CO.TW W DVD+R.1 8X 1 (10.8MB/sec)OM.T W DVD-R 4.7GB Authoring,.DVD-R 4.7GB General, 1 W. OM 8X (10.8MB/sec) W.C OM W DVD-RAM DVD+RW (10.8MB/sec) WW 8X.100Y DVD-R DL 8.5GB, W.TW WW.100Y.C M.TW W DVD-RW,.100Y.C 4.7GB.TW W (8.1MB/sec)COM W DVD+R DUAL 6X - WRITE: DVD4.7GB(DVDR/RW, DVD-RAM), M DVDR DL(8.5GB), O 6X (8.1MB/sec) W. O W WW 6X (8.1MB/sec).T 00Y WW DUAL100Y.C M6X (8.1MB/sec) CD-R/RW.TW WW.100Y.C M.TW DVD-R. W.1 Y.COM W O W O W8X (10.8MB/sec) W DVD-R 8X (10.8MB/sec) 2. DATA FORMAT: W WW.100Y.C M.TW 0Y.C M.TW WW.1 CD-ROM XA, ENHANCED-CD, M.T.100 - CD: CD-DA, CD-ROM, MIXED-CD, 0 O 6X (8.1MB/sec) W DVD-RW 8X (10.8MB/sec) O WW 00Y.CO.TW W.C W W 0Y W CD-EXTRA/CD+, Photo-CD, VIDEO-CD, CD-TEXT, CD-G,TW.TW WW.100Y.C M. DVD-ROM (Single) 0 8X (10.8MB/sec) OM W.1 W.1 Y.CO-M W Multi-Session O W W WW.100Y.C M.TW WDVD-VIDEO, Y.C W DVD-ROM (Dual) 8X (10.8MB/sec) 0 W W - DVD: DVD-RAM, DVD-ROM, M.T O W M.T.100 Multi-Session(Read/Write), CD-ROM WW.10 24X (3.6MB/sec).CO.TW Multi-Border(Read/Write) WW CO. Y WW.100Y.C M.TW W W.TW 100 00Y O CD-R 24X M 24X (3.6MB/sec) W M.1 W. 3. Recording mode.CO(3.6MB/sec) WW. Y.C M.TW WW 0.CO.TW US-RW WW.TW 24X (3.6MB/sec)100 00Y 24X (3.6MB/sec) - CD-R/RW: DAO, TAO, SAO,W Write(RW)0Y Packet W M.1 W.1 Y10XOM W.CO.TW - DVD+R/RW: Sequential, Random(RW) 24XWW (3.6MB/sec) WW 00Y.CO.TW HS-RW WW 00Y 0.C (1.5MB/sec) T. 0 W - DVD-R/RW: Incremental, DAO, Restricted.Overwrite(RW) M OM 1 W.1 CD-RW 4X (0.6MB/sec) 24X (3.6MB/sec) W.1 Y.COM W - DVD-RAM: Random WW.100Y.C M.T WW 00Y.CO.TW DVD-RAM WW W 5X (6.75MB/sec)W M.100 5X (6.75MB/sec)T.CO. W.1 Y.COM W Time.CO.T DVD WW 0CD 150ms (Random),W 160ms (Random)W W W Access 00Y 0Y W W W.1 M.T.100 W.1 UltraY.COM2: 33.3MB/sec, Multiword DMA mode2: 0Y.COM DMA Mode W Data WW.10 WW 00Y.CO.TW transfer mode W W 00 W Mode M.116.6MB/sec, PIOM.T4: 16.7MB/sec WW 00Y.CO W.1 Y.COM Interface WW Serial-ATACO.TW Y. W W WW.100.TW M.100 W.1 OM Buffer Memory W WW 2M 00Y.CO.TW WW W W Form W Y.C W.T Horizontal Vertical MDrive Install.100 W.1 /Y. OM W WW 00Y.CO SizeTWH * L) (W * WW 128.(W) x 12.7C x 127 (D) without Bezel 00 (H) M.T W. W1 W.1 Y.COM Protection Buffer Wyes 00Y.CO W W yes.1 WW.100 M.T W OLead Free W WW no WW.100Y.C Light Scribe.TW OM W Y.C WW.1002009 M.TW www.samsungodd.com 33 Optical Disk Drives JANUARY O W WW.100Y.C