Density 1GB 2GB 1GB 2GB 4GB Organization 128Mx72 256Mx72 128Mx72 256Mx72 512Mx72 Part Number M391B2873DZ1-C(F8/H9) M391B5673DZ1-C(F8/H9) M391B2873EH1-C(F8/H9) M391B5673EH1-C(F8/H9) M391B5273BH1-C(F8/H9) Composition 1Gb (128M x8)*9 1Gb (128M x8)*18 1Gb (128M x8)*9 1Gb (128M x8)*18 2Gb (256M x8)*18 Compliance RoHS RoHS RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free Speed (Mbps) 1066/1333 1066/1333 1066/1333 1066/1333 1066/1333 Module Ranks 2

JANUARY 2009

DDR3 SDRAM COMPONENTS
1Gb 1Gb 1Gb 1Gb 1Gb 1Gb 2Gb 2Gb 2Gb
256M x4 128M x8 64M x16 256M x4 128M x8 64M x16 512M x4 256M x8 128M x16
K4B1G0446D-HC(F7/F8/H9) K4B1G0846D-HC(F7/F8/H9) K4B1G1646D-HC(F7/F8/H9) K4B1G0446E-HC(F7/F8/H9) K4B1G0846E-HC(F7/F8/H9) K4B1G1646E-HC(F7/F8/H9) K4B2G0446B-HC(F7/F8/H9) K4B2G0846B-HC(F7/F8/H9) K4B2G1646B-HC(F7/F8/H9)
82 Ball -FBGA 82 Ball -FBGA 100 Ball -FBGA 78 Ball -FBGA 78 Ball -FBGA 96 Ball -FBGA 78 Ball -FBGA 78 Ball -FBGA 96 Ball -FBGA
RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free RoHS & Halogen Free
800/1066/1333 800/1066/1333 800/1066/1333 800/1066/1333 800/1066/1333 800/1066/1333 800/1066/1333 800/1066/1333 800/1066/1333
9x11mm 9x11mm 9x13.3mm 7.5x11mm 7.5x11mm 7.5x13.3mm 9x11.5mm 9x11.5mm 9x13.3mm
DDR2 SDRAM REGISTERED MODULES
Module Density 512MB Organization 64Mx72 Part Number M393T6553GZA-C(E6/F7) M393T6553GZ3-C(CC/D5) M393T2950GZA-C(E6/F7) M393T2950GZ3-C(CC/D5) 1GB 128Mx72 M393T2953GZA-C(E6/F7) M393T2953GZ3-C(CC/D5) M393T2863QZA-C(E6/F7) M393T2863EHA-C(E6/F7/E7) M393T5750GZA-C(E6/F7) M393T5750GZ3-C(CC/D5) 2GB 256Mx72 M393T5660QZA-C(E6/F7/E7) M393T5660EHA-C(E6/F7/E7) M393T5663QZA-C(E6/F7/E7) M393T5663EHA-C(E6/F7/E7) 4GB 512Mx72 M393T5160QZA-C(E6/F7/E7) M393T5160EHA-C(E6/F7/E7) M393T1G60QJA-C(D5/E6) 8GB 1Gx72 M393T1G60EMA-C(D5/E6) M393T1K66AZA-C(E6/F7)
NOTES: CC=PC2-3200 (DDR2-400 @ CL=3) E6=PC2-5300 (DDR2-667 @ CL=5) F7=PC2-6400 (DDR2-800 @ CL=6) E7=PC2-6400 (DDR2-800 @ CL=5) D5=PC2-4200 (DDR2-533 @ CL=4) Voltage = 1.8V Module Height = 1.2"

Module Density 512MB Organization 64Mx72 Part Number M395T6553GZ4-CE6/F7/E7(50/60) M395T2953GZ4-CE6/F7/E7(50/60) M395T2863QZ4-CE6/F7/E7(60/80/90) 1GB 128Mx72 M395T2863EH4-CE6/F7/E7(60/80/90) M395T2863QZ4-YE680 M395T2863EH4-YE6/F7(80) M395T5750GZ4-CE6/F7/E7(50/60) M395T5663QZ4-CE6/F7/E7(60/80/90) 2GB 256Mx72 M395T5663EH4-C(E6/F7/E7)(60/80/90) M395T5663QZ4-YE680 M395T5663EH4-YE6/F7(80) M395T5160QZ4-CE6/F7/E7(60/80/90) M395T5160EH4-C(E6/F7/E7)(60/80/90) M395T5160QZ4-YE680 M395T5160EH4-YE6/F7(80) 4GB 512Mx72 M395T5163QZ4-CE6/F7/E7(80) M395T5163EH4-CE6/F7/E7(80) M395T5163QZ4-YE680 M395T5163EH4-YE680 M395T5263AZ4-CE6/F7(60/80) M395T5263AZ4-YE680 M395T1G60QJ4-CE6/F7(80) M395T1G60EM4-CE6/F7(80) 8GB 1Gx72 M395T1G60QJ4-YE680 M395T1G60EM4-YE680 M395T1K66AZ4-CE6/F7(60/80) M395T1K66AZ4-YE680
NOTES: C: AMB Voltage = 1.5V C: DRAM Voltage = 1.8V Y*: AMB Voltage = 1.5V (Available only with CE6) Y*: DRAM Voltage = 1.55V (Available only with CE6)
Composition (64M x8)*9 (64M x8)*18 (128M x8)*9 (128M x8)*9 (128M x8)*9 (128M x8)*9 (128M x4)*36 (128M x8)*18 (128M x8)*18 (128M x8)*18 (128M x8)*18 (256M x4)*36 (256M x4)*36 (256M x4)*36 (256M x4)*36 (128M x8)*36 (128M x8)*36 (128M x8)*36 (128M x8)*36 (256M x8)*18 (256M x8)*18 DDP (512M x4)*36 DDP (512M x4)*36 DDP (512M x4)*36 DDP (512M x4)*36 st. (1G x4)*18 st. (1G x4)*18
50: Intel C1 AMB 60: IDT D1 AMB 80 : IDT L4 AMB 90: Montage D1 AMB
Compliance Lead free Lead free Lead free Lead free & Halogen free Lead free Lead free & Halogen free Lead free Lead free Lead free & Halogen free Lead free Lead free & Halogen free Lead free Lead free & Halogen free Lead free Lead free & Halogen free Lead free Lead free & Halogen free Lead free Lead free & Halogen free Lead free Lead free Lead free Lead free & Halogen free Lead free Lead free & Halogen free Lead free Lead free
Speed (Mbps) 667/800 667/800 667/800 667/667/800 667/800 667/800 667/667/800 667/800 667/667/800 667/800 667/667 667/667/800 667/667 667/800 667
Voltage 1.8V 1.8V 1.8V 1.8V 1.55V 1.55V 1.8V 1.8V 1.8V 1.55V 1.55V 1.8V 1.8V 1.55V 1.55V 1.8V 1.8V 1.55V 1.55V 1.8V 1.55V 1.8V 1.8V 1.55V 1.55V 1.8V 1.55V

Rank 2

Production Now Now Now Jan`09 Now Mar`09 Now Now Jan`09 Now Feb '09 Now Feb '09 Now Feb '09 Now Mar`09 Now Mar`09 Now Now Now Mar`09 Now Mar`09 Now Now

800 Speed option would be limited along with AMB type. Module Height = 1.2"
DDR2 SDRAM UNBUFFERED MODULES
Density 512MB Organization 64Mx64 Part Number M378T6553GZS-C(E6/F7/E7) M378T6464QZ3-C(E6/F7/E7) M378T2953GZ3-C(E6/F7/E7) 1GB 128Mx64 M378T2863QZS-C(E6/F7/E7) M378T2863EHS-C(E6/F7/E7) 2GB 4GB
Composition (64M x8)*8 (64M x16)*4 (64M x8)*16 (128M x8)*8 (128M x8)*8 (128M x8)*16 (128M x8)*16 (256M x8)*16
Voltage = 1.8V Module Height =1.2"
Compliance Lead free Lead free Lead free Lead free Lead free & Halogen free Lead free Lead free & Halogen free Lead free
Speed (Mbps) 667/800 667/800 667/800 667/800 667/800 667/800 667/800 667/800

Rank 2 2

Production Now Now Now Now Now Now Now Now

256Mx64 512Mx64

M378T5663QZ3-C(E6/F7/E7) M378T5663EH3-C(E6/F7/E7) M378T5263AZ3-C(E6/F7)
E6=PC2-5300 (DDR2-667 @ CL=5) E7=PC2-6400 (DDR2-800 @ CL=5) F7=PC2-6400 (DDR2-800 @ CL=6)
DDR2 SDRAM UNBUFFERED MODULES (ECC)
Module Density 512MB 1GB Organization 64Mx72 128Mx72 Part Number M391T6553GZ3-C(E6/F7/E7) M391T2863QZ3-C(E6/F7/E7) M391T2863EH3-C(E6/F7/E7) M391T5663QZ3-C(E6/F7/E7) M391T5663EH3-C(E6/F7/E7) M391T5263AZ3-C(E6/F7) Composition (64M x8)*9 (128M x8)*9 (128M x8)*9 (128M x8)*18 (128M x8)*18 (256M x8)*18
Compliance Lead free Lead free Lead free & Halogen free Lead free Lead free & Halogen free Lead free
Speed (Mbps) 667/800 667/800 667/800 667/800 667/800 667/800
Production Now Now Jan '09 Now Jan '09 Now

2GB 4GB

DDR2 SDRAM SODIMM MODULES
Module Density 512MB Organization 64Mx64 Part Number M470T6554GZ3-C(E6/F7/E7) M470T6464QZ3-C(E6/F7/E7) M470T2953GZ3-C(E6/F7/E7) 1GB 128Mx64 M470T2864QZ3-C(E6/F7/E7) M470T2864EH3-C(E6/F7/E7) 2GB 4GB
Composition (32M x16)*8 (64M x16)*4 (64M x8)*16 (64M x16)*8 (64M x16)*8 (128M x8)*8 (128M x8)*8 st.(512M x8)*8
M470T5663QZ3-C(E6/F7/E7) M470T5663EH3-C(E6/F7/E7) M470T5267AZ3-C(E6/F7)

Module

DDR2 SDRAM COMPONENTS
Density 256Mb Organization 16Mx16 128M x4 512Mb 64M x8 32M x16 256M x4 Part Number K4T56163QI-ZC(E6/F7/E7) K4T51043QG-HC(E6/F7/E7) K4T51083QG-HC(E6/F7/E7) K4T51163QG-HC(E6/F7/E7/F8) K4T1G044QQ-HC(E6/F7/E7) K4T1G044QE-HC(E6/F7/E7) K4T1G084QQ-HC(E6/F7/E7) K4T1G084QE-HC(E6/F7/E7) K4T1G164QQ-HC(E6/F7/E7) K4T1G164QE-HC(E6/F7/E7/F8) K4T2G044QA-HC(E6/F7/E7) K4T2G084QA-HC(E6/F7/E7) # Pins-Package 84-FBGA 60-FBGA 60-FBGA 84-FBGA 68-FBGA 68-FBGA 68-FBGA 68-FBGA 84-FBGA 84-FBGA 68-FBGA 68-FBGA Dimensions 9x13mm 10x11mm 10x11mm 11x13mm 11x18mm 11x18mm 11x18mm 11x18mm 11x18mm 11x18mm 11x18mm 11x18mm

Voltage = 1.8V

Package Lead free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free

Speed (Mbps) 667/800 667/800 667/800 667/800/1066 667/800 667/800 667/800 667/800 667/800 667/800/1066 667/800 667/800
Production Now Now Now Now Now Jan'09 Now Now Now Jan'09 Now Now

128M x8

64M x16 512Mx4 256Mx8
E6=DDR2-667 (5-5-5) F7=DDR2-800 (6-6-6)
E7=DDR2-800 (5-5-5) F8=DDR2-1066 (7-7-7)
DDR SDRAM 1U REGISTERED MODULES
Module Density 512Mb Organization 64Mx72 Part Number M312L6523FH3-CCC/B0 M312L2920FLS-CB0 1Gb 128Mx72 M312L2923FH3-CCC/B0 M312L2920FH3-CB3 2Gb
Composition (64M x8)*9 (128M x4)*18 (128M x8)*9 (128M x4)*18 (128M x4)*36
Compliance Lead-free Lead-free Lead-free Lead-free Lead-free

Type: 184-pin

Speed (Mbps) 333/400 333/400 333/400 333/400 333/400

256Mx72

M312L5720FH3-CB3
B0 = DDR266 (133MHz @ CL=2.5) A2 = DDR266 (133MHz @ Cl=2)
B3 = DDR333 (166MHz @ CL=2.5) CC = DDR400 (200MHz @ CL=3)
DDR SDRAM UNBUFFERED MODULES

Module Density 512Mb 1Gb

Organization 64MX64 128Mx64
Part Number M368L6523FLS-CCC/B3 M368L2923FLN-CCC/B3
Composition (64M x8)*8 (64M x8)*16
Compliance Lead-free & Halogen free Lead-free & Halogen free
Speed (Mbps) 333/400 333/400
Package: 66TSOP lead-free and halogen-free Voltage: 2.5V

DDR SDRAM SODIMM MODULES

Part Number M470L6524FL0-CB300 M470L2923F60-CB300
Composition (32M x16)*8 (64M x8)*16
Compliance Lead-free Lead-free

Speed (Mbps) 333 333

B0 = DDR266 (133MHz @ CL=2.5) CC = DDR400 (200MHz @ CL=3)
B3 = DDR333 (166MHz @ CL=2.5) A2 = DDR266 (133MHz @ Cl=2)

DDR SDRAM COMPONENTS

64Mx4 256Mb 32Mx8 16Mx16 128Mx4 512Mb K4H560438J-LCB3/B0 K4H560838J-LCCC/B3 K4H561638J-LCCC/B3 K4H510438F-LCB3/B0 K4H510438F-HCCC/B3 K4H510838F-LCCC/B3 K4H510838F-HCCC/B3 K4H511638F-LCCC/B3 K4H281638L-LCCC/CD 66-TSOP 66-TSOP 66-TSOP 66-TSOP 60-FBGA 66-TSOP 60-FBGA 66-TSOP 66-TSOP 266/333 333/400 333/400 266/333 333/400 333/400 333/400 333/400 400/500 Halogen -free Halogen -free Halogen -free Halogen -free Halogen -free Halogen -free Halogen -free Halogen -free Halogen -free

64Mx8 32Mx16

SDRAM COMPONENTS
Density 64Mb Organization 8Mx8 4Mx16 16Mx8 8Mx16 64Mx4 256Mb 32Mx8 16Mx16 128Mx4 512Mb 64Mx8 32Mx16
Part Number K4S640832N-UC(75)000 K4S641632N-UC(L)(75/60)000 K4S280832K-UC(L)(75)000 K4S281632K-UC(L)(75/60)000 K4S560432J-UC(L)(75)000 K4S560832J-UC(L)(75)000 K4S561632J-UC(L)(75/60)000 K4S510432D-UC(L)(75)000 K4S510832D-UC(L)(75)000 K4S511632D-UC(L)(75)000

6. # of Internal Banks

2: 2 Banks 3: 4 Banks 4: 8 Banks 5: 16 Banks
7. Interface ( VDD, VDDQ)
2: LVTTL, 3.3V, 3.3V 4: LVTTL, 2.5V, 2.5V 5: SSTL-2 1.8V, 1.8V 6: SSTL-15 1.5V, 1.5V 8: SSTL-2, 2.5V, 2.5V A: SSTL, 2.5V, 1.8V F: POD-15 (1.5V,1.5V) H: SSTL_2 DLL, 3.3V, 2.5V M: LVTTL, 1.8V, 1.5V N: LVTTL, 1.5V, 1.5V P: LVTTL, 1.8V, 1.8V Q: SSTL-2 1.8V, 1.8V R: SSTL-2, 2.8V, 2.8V U: DRSL, 1.8V, 1.2V

4. Density

10: 1G, 8K/32ms 16: 16M, 4K/64ms 26: 128M, 4K/32ms 28: 128M, 4K/64ms 32: 32M, 2K/32ms 50: 512M, 32K/16ms 51: 512M, 8K/64ms 52: 512M, 8K/32ms 54: 256M, 16K/16ms 55: 256M, 4K/32ms 56: 256M, 8K/64ms 62: 64M, 2K/16ms 64: 64M, 4K/64ms 68: 768M, 8K/64ms 1G: 1G, 8K/64ms 2G: 2G, 8K/64ms 4G: 4G, 8K/64ms

8. Revision

A: 2nd Generation B: 3rd Generation C: 4th Generation D: 5th Generation E: 6th Generation F: 7th Generation G: 8th Generation H: 9th Generation I: 10th Generation J: 11th Generation K: 12th Generation M: 1st Generation N: 14th Generation Q: 17th Generation

5. Bit Organization

02: x2 04: x4 06: x4 Stack (Flexframe) 07: x8 Stack (Flexframe)
XDR DRAM J: BOC(LF) P: BOC Mobile DRAM Leaded / Lead Free G/A: 52balls FBGA Mono R/B: 54balls FBGA Mono X /Z: 54balls BOC Mono J /V: 60(72)balls FBGA Mono 0.5pitch L /F: 60balls FBGA Mono 0.8pitch S/D: 90balls FBGA Monolithic (11mm x 13mm) F/H: Smaller 90balls FBGA Mono Y/P: 54balls CSP DDP M/E: 90balls FBGA DDP
DDR2 SDRAM CC: DDR2-400 (200MHz @ CL=3, tRCD=3, tRP=3) D5: DDR2-533 (266MHz @ CL=4, tRCD=4, tRP=4) E6: DDR2-667 (333MHz @ CL=5, tRCD=5, tRP=5) F7: DDR2-800 (400MHz @ CL=6, tRCD=6, tRP=6) E7: DDR2-800 (400MHz @ CL=5, tRCD=5, tRP=5) DDR3 SDRAM F7: DDR3-800 (400MHz @ CL=6, tRCD=6, tRP=6) F8: DDR3-1066 (533MHz @ CL=7, tRCD=7, tRP=7) G8: DDR3-1066 (533MHz @ CL=8, tRCD=8, tRP=8) H9: DDR3-1333 (667MHz @ CL=9, tRCD=9, tRP=9) K0: DDR3-1600 (800MHz @ CL=11, tRCD=11, tRP=11) Graphics Memory 18: 1.8ns (550MHz) 04: 0.4ns (2500MHz) 20: 2.0ns (500MHz) 05: 0.5ns (2000MHz) 22: 2.2ns (450MHz) 5C: 0.56ns (1800MHz) 25: 2.5ns (400MHz) 06: 0.62ns (1600MHz) 2C: 2.66ns (375MHz) 6A: 0.66ns (1500MHz) 2A: 2.86ns (350MHz) 07: 0.71ns (1400MHz) 33: 3.3ns (300MHz) 7A: 0.77ns (1300MHz) 36: 3.6ns (275MHz) 08: 0.8ns (1200MHz) 40: 4.0ns (250MHz) 09: 0.9ns (1100MHz) 45: 4.5ns (222MHz) 1 : 1.0ns (1000MHz) 50/5A: 5.0ns (200MHz)

1 : 1.1ns (900MHz) 55: 5.5ns (183MHz) 12: 1.25ns (800MHz) 60: 6.0ns (166MHz) 14: 1.4ns (700MHz) 16: 1.6ns (600MHz) SDRAM (Default CL=3) 50: 5.0ns (200MHz CL=3) 60: 6.0ns (166MHz CL=3) 67: 6.7ns 75: 7.5ns PC133 (133MHz CL=3) XDR DRAM A2: 2.4Gbps, 36ns, 16Cycles B3: 3.2Gbps, 35ns, 20Cycles C3: 3.2Gbps, 35ns, 24Cycles C4: 4.0Gbps, 28ns, 24Cycles DS: Daisychain Sample Mobile-SDRAM 60: 166MHz, CL 3 75: 133MHz, CL 3 80: 125MHz, CL 3 1H: 105MHz, CL 2 1L: 105MHz, CL 3 15: 66MHz, CL 2 & 3 Mobile-DDR C3: 133MHz, CL 3 C2: 100MHz, CL 3 C0: 66MHz, CL 3
Note: All of Lead-free or Halogen-free product are in compliance with RoHS
10. Temp & Power - COMMON (Temp, Power)
C: Commercial, Normal (0C 95C) & Normal Power C: (Mobile Only) Commercial (-25 ~ 70C), Normal Power J: Commercial, Medium L: Commercial, Low (0C 95C) & Low Power L: (Mobile Only) Commercial, Low, i-TCSR F: Commercial, Low, i-TCSR & PASR & DS E: Extended (-25~85C), Normal N: Extended, Low, i-TCSR G: Extended, Low, i-TCSR & PASR & DS I: Industrial, Normal (-40C 85C) & Normal Power P: Industrial, Low (-40C 85C) & Low Power H: Industrial, Low, i-TCSR & PASR & DS
11. Speed (Wafer/Chip Biz/BGD: 00)
DDR SDRAM CC: DDR400 (200MHz @ CL=3, tRCD=3, tRP=3) B3: DDR333 (166MHz @ CL=2.5, tRCD=3, tRP=3) *1 A2: DDR266 (133MHz @ CL=2 , tRCD=3, tRP=3) B0: DDR266 (133MHz @ CL=2.5, tRCD=3, tRP=3)
Note 1: "B3" has compatibility with "A2" and "B0"
MODULE DRAM ORDERING INFORMATION
SAMSUNG Memory DIMM Data bits DRAM Component Type Depth Number of Banks Bit Organization
AMB Vendor Speed Temp & Power PCB Revision Package Component Revision
1. Memory Module: M 2. DIMM Type

3: DIMM 4: SODIMM

5. Depth
09: 8M (for 128Mb/512Mb) 17: 16M (for 128Mb/512Mb) 16: 16M 28: 128M 29: 128M (for 128Mb/512Mb) 32: 32M 33: 32M (for 128Mb/512Mb) 51: 512M 52: 512M (for 512Mb/2Gb) 56: 256M 57: 256M (for 512Mb/2Gb) 59: 256M (for 128Mb/512Mb) 64: 64M 65: 64M (for 128Mb/512Mb) 1G: 1G 1K: 1G (for 2Gb)

16Gb based 4KByte/Page Cache

64Gb QDP

16Gb mono 32Gb QDP
16Gb DDP 8Gb Based 2KByte/Page W/O Cache 8Gb mono

4Gb based

4Gb mono
Please contact your local Samsung sales representative for latest product offerings. Note: All parts are lead free

www.samsung.com/semi/ash

SLC NAND FLASH
MOQ Family Density Tech Part Number Package Type TSOP1 TSOP1 TSOP1 TSOP1 TSOP1 TSOP1 TSOP1 TSOP1 TSOP1 ULGA TSOP1 TSOP1 ULGA HF & LF TSOP1 TSOP1 ULGA TSOP1 TSOP1 ULGA HF & LF TSOP1 TSOP1 ULGA TSOP1 TSOP1 ULGA HF & LF TSOP1 TSOP1 TSOP1 TSOP1 TSOP1 TSOPFBGA(9.5x12) TSOP1 TSOP1 TSOP1 TSOPFBGA(8.5x13) 63 FBGA(8.5x13) TSOP1 TSOPFBGA(9x11) 63 FBGA(9x11) Org. Vol(V) Tray -xxxx0xx 64Gb DSP 32Gb QDP 8Gb Based 4KB/page 16Gb DDP 8G mono 51nm K9NCG08U5M-PCB0 K9WBG08U1M-PCB0 K9WBG08U1M-PIB0 K9KAG08U0M-PCB0 K9KAG08U0M-PIB0 K9F8G08U0M-PCB0 K9F8G08U0M-PIB0 K9WAG08U1A-PCB0 63nm 16Gb QDP K9WAG08U1A-PIB0 K9WAG08U1A-IIB0 K9WAG08U1B-PCB0 59nm K9WAG08U1B-PIB0 K9WAG08U1B-KIB0 K9K8G08U0A-PCB0 63nm 4Gb Based 2KB/page 8Gb DDP K9K8G08U0A-PIB0 K9K8G08U1A-IIB0 K9K8G08U0B-PCB0 59nm K9K8G08U0B-PIB0 K9K8G08U1B-KIB0 K9F4G08U0A-PCB0 63nm 4Gb K9F4G08U0A-PIB0 K9F4G08U0A-IIB0 K9F4G08U0B-PCB0 59nm K9F4G08U0B-PIB0 K9F4G08U0B-KIB0 K9F2G08U0A-PCB0 63nm 2Gb 2Gb 59nm K9F2G08U0A-PIB0 K9F2G08U0B-PCB0 K9F2G08U0B-PIB0 K9F1G08U0B-PCB0 63nm 1Gb 1Gb K9F1G08U0B-PIB0 K9F1G08R0B-JIB0 59nm K9F1G08U0C-PCB0 K9F1G08U0C-PIB0 K9F1208U0C-PCB0 512Mb 512Mb 63nm K9F1208U0C-PIB0 K9F1208R0C-JIB0 K9F1208U0C-JIB0 K9F5608U0D-PCB0 256Mb 256Mb 90nm K9F5608U0D-PIB0 K9F5608R0D-JIB0 K9F5608U0D-JIB0 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 3.3 3.3 3.3 3.3 3.3 1.8 3.3 3.3 3.3 3.3 1.8 3.3 3.3 3.3 1.8 3.1,960 1,120 1,1,000 1,280 1,280 1,000 1,000 1,000 1,000 1,000 2,000 1,000 1,000 1,000 1,000 2,000 2,000 1,000 1,000 2,000 2,000 59nm C-die coming Oct'08: K9F1G08U0CPCB0000; B-die EOL: LTBO due Mar'09 59nm C-die coming Oct'08: K9F1G08U0CPIB0000; B-die EOL: LTBO due Mar'09 1.8v B-die supported through 2009 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.960 T/R -xxx0Txx 1,000 1,000 1,000 1,000 1,000 1,000 1,000 1,000 1,000 2,000 1,000 1,000 2,000 1,000 1,000 2,000 1,000 1,000 2,000 1,000 1,000 2,000 1,000 1,000 2,000 1,000 qualify 59nm B-die: K9F2G08U0B-PCB0000; A-die EOL: LTBO due Dec'08 qualify 59nm B-die: K9F2G08U0B-PIB0000; A-die EOL: LTBO due Dec'08 qualify 59nm B-die: K9F4G08U0B-PCB0000; A-die EOL: LTBO due Dec'08 qualify 59nm B-die: K9F4G08U0B-PIB0000; A-die EOL: LTBO due Dec'08 A-die EOL: LTBO due Dec'08 qualify 59nm B-die: K9K8G08U0B-PCB0000; A-die EOL: LTBO due Dec'08 qualify 59nm B-die: K9K8G08U0B-PIB0000; A-die EOL: LTBO due Dec'08 A-die EOL/LTBO due Dec'08 qualify 59nm B-die: K9WAG08U1B-PCB0000; A-die EOL:LTBO due Dec'08 qualify 59nm B-die: K9WAG08U1B-PIB0000; A-die EOL: LTBO due Dec'08 A-die EOL: LTBO due Dec'08 Remarks

Please contact your local Samsung sales representative for latest product offerings.
Note: All parts are lead free
Solid State Drives (SSD)*
Application Interface Size 1.8" SATA II SLC 3.0Gb/sec Connector Thin uSATA Den. 32GB 64GB 32GB 64GB 32GB 64GB 64GB 128GB 64GB 128GB 64GB 128GB 64GB 2.5" PM800 SLIM (caseless) SS410 SATA II 3.0Gb/sec SLC 2.5" uSATA Thin SATA 128GB 256GB 64GB 128GB 25GB 50GB 50GB 64GB 50GB 100GB 8GB UMPC/Low-Cost PC SATA II MLC UM410 HALF SLIM Thin SATA 16GB 32GB
*Please contact Marketing for the latest offerings.

Comp. 8Gb

Part Number MCBQE32G8MPP-0VA00 MCCOE64G8MPP-0VA00 MCBQE32G5MPP-0VA00 MCCOE64G5MPP-0VA00 MCBQE32GFMPP-MVA00 MCBQE64GFMPP-MVA00 MMCRE64G8MPP-0VA00 MMCQE28G8MUP-0VA00 MMCRE64G5MPP-0VA00 MMDOE28G5MPP-0VA00
2.5" SLIM (caseless) 1.8"

Thin SATA

Thin uSATA

16Gb 16Gb

PC/Notebook
2.5" SLIM (caseless)

SATA II MLC 3.0Gb/sec

MMCRE64GFMPP-MVA00 MMCQE28GFMPP-MVA00 MMCRE64G5MXP-0VB00
MMCRE28G5MXP-0VB00 MMDOE56G5MXP-0VB00
MMCRE64GFMXP-MVB00 MMCRE28GFMXP-MVB00 MCBQE25G5MPQ-0VA03 MCCOE50G5MPQ-0VA03 MCBQE32G5MPQ-0VA03 MCCOE64G5MPQ-0VA03 MCBQE50G5MXP-0VB03 MCCOE00G5MXP-0VB03 MMAGE08GSMPP-MVA00

Server/Storage

2.5"
MMBRE16GSMPP-MVA00 MMCRE32GSMPP-MVA00
SD and MicroSD FLASH CARDS
Flash Cards Type Density 1GB SD 2GB 4GB 8GB 16G MLC M-die Component Family 8Gb MLC B-die Ver. Controller SKYMEDI SKYMEDI SKYMEDI SKYMEDI SMI 512MB 4Gb MLC A-die SMI SMI 1GB MicroSD (without adapter) 2GB 8Gb MLC B-die SKYMEDI SKYMEDI SKYMEDI SKYMEDI SKYMEDI SKYMEDI SKYMEDI SKYMEDI Manuf. Site STS STS STS STS STS ATP SPIL SPIL STS SPIL STS STS SPIL STS STS Part Number MM8GF01GWBCA-2MA00 MMAGF02GWMCA-2NA00 MMAGF04GWMCA-2NA00 MMAGF08GWMCA-2NA00 MM4GR512UACA-2PA00 MM4GR512UACU-2PA00 MM4GR512UACY-2PA00 MM8GR01GUBCY-2MA00 MM8GR01GUBCA-2MA00 MM8GR02GUBCY-2MA00 MM8GR02GUBCA-2MA00 MMAGR02GUDCA-2MA00 MM8GR04GUBCY-2MA00 MMAGR04GUDCA-2MA00 MMAGR08GUDCA-2MA135 MOQ

8Gb MLC 16G MLC

B-die M-die B-die M-die M-die

4GB 8GB

8Gb MLC 16G MLC 16G MLC
Please contact your local Samsung sales representative for latest product offerings. Note: All parts are lead free.
FLASH PRODUCT ORDERING INFORMATION
SAMSUNG Memory NAND Flash Small Classication Density Density Organization Organization Vcc
Pre-Program Version Customer Bad Block Temp Package --Generation Mode
1. Memory (K) 2. NAND Flash : 9 3. Small Classification
(SLC : Single Level Cell, MLC : Multi Level Cell)

8. Vcc

A : 1.65V~3.6V B : 2.7V (2.5V~2.9V) C : 5.0V (4.5V~5.5V) D : 2.65V (2.4V~2.9V) E : 2.3V~3.6V R : 1.8V (1.65V~1.95V) Q : 1.8V (1.7V~1.95V) T : 2.4V~3.0V U : 2.7V~3.6V V : 3.3V (3.0V~3.6V) W : 2.7V~5.5V, 3.0V~5.5V 0 : NONE

13. Temp

C : Commercial I : Industrial 0 : NONE (Containing Wafer, CHIP, BIZ, Exception handling code)

14. Customer Bad Block

B : Include Bad Block D : Daisychain Sample L : 1~5 Bad Block N : ini. 0 blk, add. 10 blk S : All Good Block 0 : NONE (Containing Wafer, CHIP, BIZ, Exception handling code)
7 : SLC moviNAND 8 : MLC moviNAND F : SLC Normal G : MLC Normal H : MLC QDP K : SLC DDP L : MLC DDP M : MLC DSP N : SLC DSP P : MLC 8 Die Stack Q : SLC 8 Die Stack S : SLC Single SM T : SLC SINGLE (S/B) U : 2 Stack MSP W : SLC 4 Die Stack

9. Mode

0 : Normal 1 : Dual nCE & Dual R/nB 3 : Tri /CE & Tri R/B 4 : Quad nCE & Single R/nB 5 : Quad nCE & Quad R/nB 9 : 1st block OTP A : Mask Option 1 L : Low grade

15. Pre-Program Version

0 : None Serial (1~9, A~Z)

10. Generation

M : 1st Generation A : 2nd Generation B : 3rd Generation C : 4th Generation D : 5th Generation

4~5. Density

12 : 512M 56 : 256M 1G : 1G 2G : 2G 4G : 4G 8G : 8G AG : 16G BG : 32G CG : 64G DG : 128G EG : 256G LG : 24G NG : 96G ZG : 48G 00 : NONE

11. ---- 12. Package

A : COB B : FBGA (Halogen-Free, Lead-Free) C : CHIP BIZ D : 63-TBGA F : WSOP (Lead-Free) G : FBGA H : TBGA (Lead-Free) I : ULGA (Lead-Free) (12*17) J : FBGA (Lead-Free) L : ULGA (Lead-Free) (14*18) M : TLGA N : TLGA2 P : TSOP1 (Lead-Free) Q : TSOP2 (Lead-Free) S : TSOP1 (Halogen-Free, Lead-Free) T : TSOP2 U : COB (MMC) V : WSOP W : Wafer Y : TSOP1 Z : WELP (Lead-Free)

6~7. Organization

00 : NONE 08 : x: x16
LOW POWER ASYNCHRONOUS SRAM
Type Density Organization 4Mx16 UtRAM 64Mb 4Mx16 4Mx16 UtRAM2 64Mb 4Mx16 4Mx16 2Mx16 UtRAM 32Mb 2Mx16 2Mx16 UtRAM2 32Mb 2Mx16 2Mx16 1Mx16 1Mx16 1Mx16 1Mx16 Part Number K1S6416BCE K1S64161CE K1B6416B2E K1C6416B2E K1C6416B8E K1S3216BCF K1S32161CF K1B3216B2F K1C3216B2F K1C3216B8F K1S1616B1C K1S161611C K1C1616B2C K1C1616B8C # Pins-Package 48-FBGA 48-FBGA 54-FBGA 54-FBGA 54-FBGA 48-FBGA 48-FBGA 54-FBGA 54-FBGA 54-FBGA 48-FBGA 48-FBGA 54-FBGA 54-FBGA Vcc (V) 1.8 3.0 1.8 1.8 1.8 1.8 3.0 1.8 1.8 1.8 1.8 3.0 1.8 1.8 Speed (ns) 104Mhz 104Mhz 104Mhz 104Mhz 104Mhz 104Mhz 104Mhz 104Mhz Temp I I I I I I I I I I I I I I Current (mA) Current (uA) Production Status 2Q'09 2Q'09 2Q'09 2Q'09 2Q'09 3Q'09 3Q'09 3Q'09 3Q'09 3Q'09 3Q'09 3Q'09 3Q'09 3Q'09

UtRAM2

HIGH-SPEED ASYNCHRONOUS SRAM
Density Organization Part Number K6R4016C1D K6R4016V1D K6R4004C1D K6R4004V1D K6R4008C1D K6R4008V1D # Pins-Package 44-SOJ, 44-TSOP2 44-SOJ, 44-TSOP2 32-SOJ 32-SOJ 36-SOJ, 44-TSOP2 36-SOJ, 44-TSOP2 Vcc (V) 5 3.3.3.3 Speed (ns) 10, 12 8, 10 Operaring Temp I I I I I I Operating Current (mA) 65, 55 80, 65 65, 55 80, 65 65, 55 80, 65 Operating Current (mA) 20, 5 20, 5 (1.2) 20, 5 20, 5 20, 5 20, 5 Production Status Mass Production Mass Production EOL EOL Mass Production Mass Production

Density Organization Part Number # PinsPackage 100-TQFP, 165FBGA 100-TQFP, 165FBGA 100-TQFP, 165FBGA 100-TQFP, 165FBGA 100-TQFP 100-TQFP 100-TQFP, 165FBGA 100-TQFP, 165FBGA 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP Operating Mode SPB SPB SPB SPB FT FT SPB SPB FT (SB) FT (SB) SPB SPB SPB SPB SPB SPB SPB SPB FT FT SPB SPB Vdd (V) Access Time tCD (ns) 2.6, 3.5 2.6, 3.5 2.6, 3.5 2.6, 3.5 7.5 7.5 2.6, 3.5 2.6, 3.5 6.5 6.5 3.5 3.5 2.6 2.6 3.5 3.5 2.6 2.6 6.5 6.5 3.0 3.0 Speed tCYC (MHz) 250, 167 250, 167 250, 167 250, 118 250, 167 250, 200 I/O Voltage (V) 2.5 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3,2.5 3.3,2.5 3.3,2.5 3.3,2.5 2.5 2.5 2.5 2.5 3.3, 2.5 3.3, 2.5 3.3,2.5 3.3,2.5 Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs

2Mx36 4Mx18 1Mx36

K7N643645M K7N641845M K7N323635C K7N321835C K7M323631C K7M321831C K7N161831B K7N163631B K7M161835B K7M163635B K7N803601B K7N801801B K7N803609B K7N801809B K7N803645B K7N801845B K7N803649B K7N801849B K7M801825B K7M803625B K7N403609B K7N401809B
2.5 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3 3.3 3.3 3.3 3.3 3.3 2.5 2.5 2.5 2.5 3.3 3.3 3.3 3.3

2Mx18 1Mx36 2Mx18 1Mx18

512Kx36 1Mx18 512Kx36 256Kx36 512Kx18 256Kx36 512Kx18
256Kx36 512Kx18 256Kx36 512Kx18 512Kx18 256Kx36

128Kx36 256Kx18

All TQFP products are Lead Free NtRAM speed recommendations: For 200MHz use 250MHz; For 133MHz use 167MHz NtRAM speed recommendation: Use 7.5ns Access Time use 6.5ns Access Time Recommended SPB speeds are 250MHz and 167MHz Recommended SB Acess Speed is 7.5ns

LATE-WRITE RR AND R-L

Type Density Organization Part Number # PinsPackage 119-BGA 119-BGA 119-BGA 119-BGA 119-BGA 119-BGA 119-BGA 119-BGA 119-BGA Operating Mode SP SP SP SP SP SP SP SP SP Vdd (V) Access Time tCD (ns) 1.6, 2.0 1.6, 2.0 1.6 1.6 2.0 2.0 2.5,2.7,3.0 2.5,2.7,3.0 6.5 Speed tCYC (MHz) 300,250 300,250 250,200,167 250,200,I/O Voltage (V) 1.5 (Max 1.8) 1.5 (Max 1.8) 1.5 (Max.2.0) 1.5 (Max.2.0) 1.5 (Max.2.0) 1.5 (Max.2.0) 2.5/3.3 2.5/3.3 2.5/3.3 Production Status C/S C/S Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs

2M x18 1M x36 1M x18 512K x36
K7K3218T2C K7K3236T2C K7K1618T2C K7K1636T2C
2B = Burst of 2 4B = Burst of 4 SIO = Separate I/O CIO = Common I/O For DDR II CIO/SIO: C-die use 330, 300, or 250MHz instad of 200MHz or 167MHz using a stable DLL circuit For DDR II+ CIO: 2-clock latency is available. A 2.5-clock latency can be supported on 18Mb at 500Mhz and 36Mb at 450MHz

CIO-2B

QDR SYNCHRONOUS SRAM
Type Density Organization 8M x9 4M x18 Part Number K7R640982M K7R641882M K7R641884M K7R643682M K7R643684M K7R320982C K7R321882C K7R321884C K7R323682C K7R323684C K7R160982B K7R161882B 1M x18 QDR I, QDR II 18Mb K7R161884B K7Q161862B K7Q161864B K7R163682B 512K x36 K7R163684B K7Q163662B K7Q163664B 36Mb QDR II+ 18Mb
# PinsPackage 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA
Vdd (V) 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8
Access Time tCD (ns) 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45 0.45 0.45 0.45 0.45 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.45,0.50
Cycle Time (MHz) 250,200,167 250,200,167 300,250,200,167 250,200,167 300,250,200,167 300, 250, 200 300, 250, 200 333, 300, 250 300, 250, 200 333, 300, 250 250,200,167 250,200,167 300,250,200,167 250,200,167 300,250,200,167 450, 400, 333 450, 400, 333 450, 400, 333 450, 400, 333
I/O Voltage (V) 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5 1.5 1.5 1.5
Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production
Comments QDR II-2B QDR II-2B QDR II-4B QDR II-2B QDR II-4B QDR II-2B QDR II-2B QDR II-4B QDR II-2B QDR II-4B QDR II - 2B QDR II - 2B QDR II - 4B QDR I - 2B QDR I - 4B QDR II - 2B QDR II - 4B QDR I - 2B QDR I - 4B QDR II + 4B QDR II + 4B QDR II + 4B QDR II + 4B
2M x36 QDR II 4M x9 2M x18

1M x36 2M x9

1.8v / 2.5v 2.5 1.8v / 2.5v 2.5 1.8 1.8 0.45,0.45,0.50 0.45,0.45,0.45,0.50
1.8v / 2.5v 2.5 1.8v / 2.5v 2.5 1.8 1.8 1.8 1.8 0.45 0.45 0.45 0.45
1M x36 2M x18 1M x18 512K x36
K7S3218T4C K7S3236T4C K7S1618T4C K7S1636T4C
For QDR I, QDR II: 2B = Burst of 2, 4B = Burst of 4 For QDR II (36Mb): C-die use 300, 250MHz or 200MHz instead of 167MHz using a stable DLL circuit For QDR II (72Mb): 2B = Burst of 2 and 250MHz or 200MHz is recommended, 4B = Burst of 4 and 300MHz or 250MHz is recommended For QDR II+: 2-clock latency supported. 2.5-clock latency can be supported with 450MHz speed

Data Transfer Rate MAX Media Type DVD+R DVD+RW DVD+R DUAL DVD-R DUAL DVD-R DVD-RW DVD-ROM (Single) DVD-ROM (Dual) CD-ROM CD-R US-RW HS-RW CD-RW DVD-RAM Access Time Data transfer mode Interface Buffer Memory Drive Install Form Size (W * H * L) Buffer Protection Lead Free Light Scribe Write 22X(29.7 MB/sec) 8X (10.8MB/sec) 16X (21.6MB/sec) 12X (16.2MB/sec) 22X(29.7 MB/sec) 6X (8.1MB/sec) 48X (7.2MB/sec) 32X (4.8MB/sec) 10X (1.5MB/sec) 4X (0.6MB/sec) 12X (16.2MB/sec) SATA 1.5Gbps Serial-ATA 2M Horizontal / Vertical 148.2mm (W) X 170mm (D) X 42mm (H) with bezel Applied Applied Applied Read 16X (21.6MB/sec) 12X (16.2MB/sec) 12X (16.2MB/sec) 12X (16.2MB/sec) 16X (21.6MB/sec) 12X (16.2MB/sec) 16X (21.6MB/sec) 12X (16.2MB/sec) 48X (7.2MB/sec) 40X (6.0MB/sec) 40X (6.0MB/sec) 40X (6.0MB/sec) 40X (6.0MB/sec) 12X (16.2MB/sec)
CD 110ms (Random), DVD 130ms (Random)

SH-S223F Optical Storage

Data Transfer Rate MAX Media Type DVD+R DVD+RW DVD+R DUAL DVD-R DUAL DVD-R DVD-RW DVD-ROM (Single) DVD-ROM (Dual) CD-ROM CD-R US-RW HS-RW CD-RW DVD-RAM Access Time Data transfer mode Interface Buffer Memory Drive Install Form Size (W * H * L) Buffer Protection Lead Free Light Scribe Write 22X(29.7 MB/sec) 8X (10.8MB/sec) 16X (21.6MB/sec) 12X (16.2MB/sec) 22X(29.7 MB/sec) 6X (8.1MB/sec) 48X (7.2MB/sec) 32X (4.8MB/sec) 10X (1.5MB/sec) 4X (0.6MB/sec) 12X (16.2MB/sec) SATA 1.5Gbps Serial-ATA 2M Horizontal / Vertical 148.2mm (W) x 42mm (H) X 170mm (D) with Bezel yes yes no JANUARY 2009 www.samsungodd.com Read 16X (21.6MB/sec) 12X (16.2MB/sec) 12X (16.2MB/sec) 12X (16.2MB/sec) 16X (21.6MB/sec) 12X (16.2MB/sec) 16X (21.6MB/sec) 12X (16.2MB/sec) 48X (7.2MB/sec) 40X (6.0MB/sec) 40X (6.0MB/sec) 40X (6.0MB/sec) 40X (6.0MB/sec) 12X (16.2MB/sec)
SN-T083A [Slot-in Type] Optical Storage
- READ: MASTERED DISC, CD-R, CD-RW, DVD-ROM, DVD-R 3.95GB, DVD-R 4.7GB Authoring, DVD-R 4.7GB General, DVD-RW, DVD+R 4.7GB, DVD+R 8.5GB(Double-layer), DVD+RW 4.7GB, DVD-RAM 4.7GB - WRITE: DVD 4.7GB(DVDR, DVDRW, DVD-RAM), Double LayerR,CD-R, CD-RW
Data Transfer Rate MAX Media Type DVD+R DVD+RW DVD+R DUAL DVD-R DUAL DVD-R DVD-RW DVD-ROM (Single) DVD-ROM (Dual) CD-ROM CD-R US-RW HS-RW CD-RW DVD-RAM Data transfer mode Interface Buffer Memory Drive Install Form Size (W * H * L) Buffer Protection Lead Free Light Scribe Write 8X (10.8MB/sec) 8X (10.8MB/sec) 6X (8.1MB/sec) 6X (8.1MB/sec) 6X (8.1MB/sec) 6X (8.1MB/sec) 24X (3.6MB/sec) 24X (3.6MB/sec) 10X (1.5MB/sec) 4X (0.6MB/sec) 5X (6.75MB/sec) Read 8X (10.8MB/sec) 8X (10.8MB/sec) 6X (8.1MB/sec) 6X (8.1MB/sec) 8X (10.8MB/sec) 8X (10.8MB/sec) 8X (10.8MB/sec) 8X (10.8MB/sec) 24X (3.6MB/sec) 24X (3.6MB/sec) 24X (3.6MB/sec) 24X (3.6MB/sec) 24X (3.6MB/sec) 5X (6.75MB/sec)

Mobile SATA

Spinpoint M5S
Capacity Model 8 MB 60GB HM061GI 80GB HM080GI 120GB HM121HI 160GB HM160HI 250GB HM250JI

FEATURES

Max. 160GB formatted capacity per disk SATA Native Command Queuing Feature TuMR/PMR head with FOD technology Serial ATA 1.5Gbps Interface Support Load/Unload Head Technology DRIVE CONFIGURATION 60GB/80GB/120GB/160GB/250GB SATA 1.5Gbps 8 MB Buffer DRAM SizeByte per Sector 5,400 RPM Rotational Speed Capacity1 Interface PERFORMANCE SPECIFICATIONS 12 ms Average Seek time (typical) 5.6 ms Average Latency Data Transfer Rate Media to/from Buffer (Max.) 250GB : 740Mbits/s 60,80,120,160GB : 826Mbits/s Buffer to/from Host (Max.) 150MB/s 4 sec Drive Ready Time (typical)3 RELIABILITY SPECIFICATIONS Non-recoverable Read Error Controlled Ramp Load/Unload ACOUSTICS Idle (typical) Performance Seek (typical) ATA Security Mode Feature Set ATA S.M.A.R.T. Feature Set SilentSeek NoiseGuard
ENVIRONMENTAL SPECIFICATIONS Temperature Operating Non-operating Humidity (non-condensing) Operating Non-operating Linear Shock (1/2 sine pulse) Operating(2ms) Non-operating(1ms) Vibration Operating(Random,10~500Hz) Altitude (relative to sea level) Operating Non-operating
5 ~ 55 -40 ~ ~ 90 % 5 ~ 95 % 325 G 1000 G 0.73Grms
-300 to 3000 m -400 to 15000 m
1 sector in 1014 bits 600,000
60,80,120,160GB : 2.2 Bel 250GB : 2.4Bel 60,80,120,160GB : 2.4 Bel 250GB : 2.6Bel
PHYSICAL DIMENSION Height Width Length Weight
9.5 mm 69.85 mm 100 mm 60,80,120,160GB : 98 g 250GB : 102g
* Note : Design and specifications are subject to change without prior notice.
POWER REQUIREMENTS Voltage Spin-up Current (Max.) Seek (typical) Read/Write (typical) Low Power Idle (typical) Standby (typical) Sleep (typical)
1.1MB = 1,000,000 Bytes, 1GB = 1,000,000,000 Bytes
+5V5% 900 mA 2.2 W 2.0 W 0.6 W 0.25 W 0.2 W
Accessible capacity may vary as some OS uses binary numbering system for reported capacity 2 A small portion of the 8MB buffer memory is reserved for firmware use 3 Power-On to Drive Ready 4 30% duty cycle, random seek 5 Power requirements based on enabled DIPM & 1.5Gbps speed 6 Unless otherwise specified, specifications are for 250GB configuration
2.5" HDD product specification Rev 3.2 Match with product manual Rev 01