3. Interface: SSTL-2 # Banks: 4 Latency: CL6 Refresh: 8K/32ms
Part Number M464S0924FTS-L7A00 M464S1724FTS-L7A00 M464S3254ETS-L7A00 M464S3354BTS-C(L)7A M464S6554BTS-C(L)7A M464S6453EN0-C75/L7500
Height (in) 1.15 1.15 1.25 1.25 1.18 1.25

# Banks Module 1 2

NOTES: 1. DS = Double-Sided 2. L = Commercial Temp., Low Power

DDR SDRAM COMPONENTS

Density 256M 256M 256M 256M 256M 256M 256M 256M 512M 512M 512M 512M 512M 512M 512M 512M 1Gb 1Gb 1Gb Org 64Mx4 64Mx4 64Mx4 32Mx8 32Mx8 32Mx8 16Mx16 16Mx16 128Mx4 128Mx4 128Mx4 64Mx8 64Mx8 64Mx8 32Mx16 32Mx16 256Mx4 128Mx8 64Mx16 Speed (Mbps) 266/266/333 266/266/333 266/266/333 266/266/333/400 266/266/333/400 266/266/333/400 266/266/333/400 266/266/333/400 266/266/333 266/266/333 266/266/333 266/266/333/400 266/266/333/400 266/266/333/400 266/266/333/400 266/266/333/400 266/266/333 266/266/333 266/266/333 Part Number K4H560438E-TC(L)B0/A2/B3 K4H560438E-NC(L)B0/A2/B3 K4H560438E-GC(L)B0/A2/B3 K4H560838E-TC(L)B0/A2/B3/CC K4H560838E-NC(L)B0/A2/B3/CC K4H560838E-GC(L)B0/A2/B3/CC K4H561638F-TC(L)B0/A2/B3/CC K4H561638F-GC(L)B0/A2/B3/CC K4H510438B-TC(L)B0/A2/B3 K4H510438B-NC(L)B0/A2/B3 K4H510438B-GC(L)B0/A2/B3 K4H510838B-TC(L)B0/A2/B3/CC K4H510838B-NC(L)B0/A2/B3/CC K4H510838B-GC(L)B0/A2/B3/CC K4H511638B-TC(L)B0/A2/B3/CC K4H511638B-GC(L)B0/A2/B3/CC K4H1G0438M-TC(L)B0/A2/B3 K4H1G0838M-TC(L)B0/A2/B3 K4H1G1638M-TC(L)B0/A2/B3
3. B3 = DDR333 (166MHz @ CL=2.5) 4. CC = DDR400 (200MHz @ CL=3)
Package 66 pin TSOP 54 pin Shrink TSOP 60 ball FBGA 66 pin TSOP 54 pin Shrink TSOP 60 ball FBGA 66 pin TSOP 60 ball FBGA 66 pin TSOP 54 pin Shrink TSOP 60 ball FBGA 66 pin TSOP 54 pin Shrink TSOP 60 ball FBGA 66 pin TSOP 60 ball FBGA 66 pin TSOP 66 pin TSOP 66 pin TSOP
NOTES: 1. B0 = DDR266 (133MHz @ CL=2.5) 2. A2 = DDR266 (133MHz @ Cl=2)
DDR SDRAM DIMM MODULES: UNBUFFERED
Density 256MB 256MB 256MB 512MB 512MB 512MB 512MB 1GB 1GB 1GB 2GB 2GB Org 32Mx64 32Mx64 32Mx72 64Mx64 64Mx64 64Mx72 64Mx72 128Mx64 128Mx64 128Mx72 256Mx64 256Mx72 Speed (Mbps) 266/266/266/266/333/400 266/266/266/266/333/400 266/266/333/400 266/266/266/266/333/400 266/266/333 266/266/333

5. Type: 184-pin

# Banks Module 2

DDR DRAM SODIMM MODULES

Density 128MB 256MB 256MB 512MB 512MB 1GB 1GB Org 16Mx64 32Mx64 32Mx64 64Mx64 64Mx64 128Mx64 128Mx64 Speed (Mbps) 266/266/333/400 266/266/333/400 266/266/333/400 266/266/333/400 266/266/333/400 266/266/333 266/266/333 Composition (16M x 16)*4 (16M x 16)*8 (32M x 16)*4 (32M x 8)*16 (32M x 16)*8 (64M x 8)*16 (64M x 16)*8 Part Number M470L1624FT0 - C(L)B0/A2/B3/CC M470L3224FT0 - C(L)B0/A2/B3/CC M470L3224BT0 - C(L)B0/A2/B3/CC M470L6423EN0 - C(L)B0/A2/B3/CC M470L6524BT0 - C(L)B0/A2/B3/CC M470L2923BN0 - C(L)B3/A2/B0 M470L2824MT0 - C(L)B3/A2/B0 Component Package TSOP TSOP TSOP Shrink TSOP Shrink TSOP Shrink TSOP Shrink TSOP # Banks Module 2
5. Type: 200-pin, Double Sided 6. Height(in): 1.25

DDR2 DRAM COMPONENTS

Density 256Mb 256Mb 512Mb 512Mb 512Mb 1Gb 1Gb
NOTES: 1. CCC - DDR2 -400 (3-3-3)
Org x4 x8 x4 x8 x16 x4 x8
Speed (Mbps) 400/533 400/533 400/533 400/533 400/533 400/533 400/533
2. CD5 - DDR2 -533 (4-4-4)
Part Number K4T56043QF-(CCC/CD5) K4T56083QF-(CCC/CD5) K4T51043QB-(CCC/CD5) K4T51083QB-(CCC/CD5) K4T51163QB-(CCC/CD5) K4T1G044QM-(CCC/CD5) K4T1G084QM-(CCC/CD5)

3. Voltage: 1.8V

DDR2 SDRAM DIMM MODULES: UNBUFFERED
Density 256MB 512MB 256MB 512MB 1GB 512MB 1GB 2GB

NOTES: 1. CC = 400Mbps

Org 32Mx64 64Mx64 32Mx64 64Mx64 128Mx64 64Mx64 128Mx64 256Mx64
Speed (Mbps) 400/533 400/533 400/533 400/533 400/533 400/533 400/533 400/533

2. D5 = 533Mbps

Part Number M378T3253FG0-(CCC/CD5) M378T6453FG0-(CCC/CD5) M378T3354BG0-(CCC/CD5) M378T6553BG0-(CCC/CD5) M378T2953BG0-(CCC/CD5) M378T6464MG0-(CCC/CD5) M378T2863MG0-(CCC/CD5) M378T5663MG0-(CCC/CD5)
3. Voltage: 1.8V Package: FBGA (11x13mm)
Components 256Mb 256Mb 512Mb 512Mb 512Mb 1Gb 1Gb 1Gb
DDR2 SDRAM 1U DIMM MODULES: REGISTERED
Density 256MB 512MB 512MB 512MB 1GB 1GB 1GB 2GB 2GB 2GB
Org 32Mx72 64Mx72 64Mx72 64Mx72 128Mx72 128Mx72 128Mx72 256Mx72 256Mx72 256Mx72
Speed (Mbps) 400/533 400/533 400/533 400/533 400/533 400/533 400/533 400/533 400/533 400/533
Part Number M393T3253FG0-(CCC/CD5) M393T6450FG0-(CCC/CD5) M393T6453FG0-(CCC/CD5) M393T6553BG0-(CCC/CD5) M393T2950BG0-(CCC/CD5) M393T2953BG0-(CCC/CD5) M393T2863MG0-(CCC/CD5) M393T5750BS0-(CCC/CD5) M393T5660MG0-(CCC/CD5) M393T5663MG0-(CCC/CD5)
Components 256Mb 256Mb 256Mb 512Mb 512Mb 512Mb 1Gb 512Mb 1Gb 1Gb

DDR2 DRAM SODIMM MODULES

Packing Type (16 digit) Common to all products, except of Mask ROM Divided into TAPE & REEL(In Mask ROM, divided into TRAY, AMMO Packing Separately) ) Type Component Packing Type TAPE & REEL Other (Tray, Tube, Jar) Stack Component (Mask ROM) Module TRAY AMMO PACKING MODULE TAPE & REEL MODULE Other Packing New Marking T 0 (Number) S Y A P M N Old Marking R 1 (Number)

SRAM 16a

LOW POWER (5V) SRAM
Density 8M bit 4M bit Part Number K6X8008C2B K6X8016C3B K6T4016C3C K6T4008C1C K6X4016C3F Organization 1Mx8 512x16 256x16 512x8 256x16 Vcc (V) 4.5 - 5.5 4.5 - 5.5 4.5 - 5.5 4.5 - 5.5 4.5 - 5.5 Speed(ns) 55,70 55,70 55,70 55,70 55,70 Operating Temp C,I C,I CI C,I I,A Operating Current (mA) 50 Standby Current (uA) 20,30 Package TSOP2(44) TSOP2(44) TSOP2(44) 32DIP,32SOP,TSOP2(32) TSOP2(44) 32DIP,32SOP,TSOP1(32) 32DIP,32SOP,TSOP1(32) 28SOP,TSOP1(28) Production Status Mass Production Mass Production Mass Production Mass Production Mass Production EOL Mass Production EOL

K6X4008C1F

1M bit 256K bit K6T1008C2E K6X1008C2D K6T0808C1D

128x8 128x8 32x8

4.5 - 5.5
4.5 - 5.5 4.5 - 5.5 4.5 - 5.5

55,70 55,70 55,70

C,I I,A C,I

10 15,25 5

32DIP,32SOP,TSOP2(32) Mass Production

K6X0808C1D

28SOP,TSOP1(28)

Mass Production

LOW VOLTAGE & LOW POWER SRAM
Density 8M bit Part Number K6X8008T2B K6X8016T3B K6F8016U3A K6F8016V3A K6T4008U1C K6T4016U3C K6T4008V1C K6T4016V3C K6X4008T1F K6X4016T3F K6T1008U2E K6T1008V2E K6F1008U2C K6X1008T2D K6F1008V2C Organization 1024Kx8 512Kx16 512Kx16 512Kx16 512x8 256x16 512x8 256x16 512x8 256x16 128x8 128x8 128x8 128x8 128x8 Vcc (V) 2.7 - 3.6 2.7 - 3.6 2.7 - 3.3 3.0 - 3.6 2.7 - 3.3 2.7 - 3.3, 3.0 -3.6 3.0 - 3.6 3.0 - 3.6 2.7 - 3.6 2.7 - 3.6 2.7 - 3.3 3.0 - 3.6 2.7 - 3.3 2.7 - 3.6 3.0 - 3.6 Speed (ns) 55,70 55,70 55,70 55,55,70,85,100 70,85 55,70,85,100 70,85 70,85 70,100 70,100 55,70 70,85 55,70 Operating Temp C,I C,I I I C,I C,I C,I C,I I,A I,A C,I C,I I I,A I Operating Standby Current (mA) Current (uA) 40 0.20 15,15,20 20,30 20,10 0.5 10,20 0.5 Package TSOP2(44) TSOP2(44) TSOP2(44) TSOP2(44) 32SOP,TSOP2(32) TSOP2(44) 32SOP,TSOP2(32) TSOP2(44) 32SOP,TSOP2(32) TSOP2(44) 32SOP,32TSOP1 32SOP,32TSOP1 32TSOP1 32DIP,32SOP,TSOP2(32) 32TSOP1 Production Status Mass Production Mass Production EOL EOL EOL EOL EOL EOL Mass Production Mass Production EOL EOL Mass Production Mass Production Mass Production

4M bit

1M bit
MICRO POWER & LOW VOLTAGE SRAM
Density 32M bit 16M bit Part Number K6F3216R6M K6F1616U6A K6F1616R6A K6F1616U6B K6F1616R6B K6F8016R6B K6F8016U6B K6F4008R2G K6F4008U2E K6F4008U2G K6F4016R4E K6F4016R6E K6F4016R6G K6F4016U4E K6F4016U4G K6F4016U6E K6F4016U6G K6F2016U4E K6F2016R4E K6F2008U2E K6F2008V2E K6F1016U4C Organization 1x16 1x16 1x16 1x16 1x16 512x16 512x16 512Kx8 512Kx8 512Kx8 256Kx16 256Kx16 256Kx16 256Kx16 256Kx16 256Kx16 256Kx16 128x16 128x16 256x8 256x8 64x16 Vcc (V) 1.65 - 1.95 2.7 - 3.3 1.65 - 2.2 2.7 - 3.3 1.65 - 2.2 1.65 - 2.2 2.7 - 3.3 1.65 - 2.20 2.7 - 3.3 2.7 - 3.3 1.65 - 2.20 1.65 - 2.20 1.65 - 2.20 2.7 - 3.3 2.7 - 3.3 2.7 - 3.3 2.7 - 3.3 2.7 - 3.3 1.65 - 2.2 2.7 - 3.3 3.0 - 3.6 2.7 - 3.3 Speed (ns) 70,85 55,70 70,85 55,70 70,85 70,85 55,70 70,85 55,70 45,55,70 70, 85 70,85 70,85 55,70 55,70 55,70 55,70 55,70 70,85 55,70 55,70 55,70 Operating Temp I I I I I I I I I I I I I I I I I I I I I I Operating Current (mA) 3mA 2 Standby Current (uA) 40uA 0.0.5 0.5 0.5 0.0.0.5 0.5 0.5 0.5 0.5 0.5 Package 55-TBGA 48-TBGA 48-TBGA 48-TBGA 48-TBGA 48-TBGA 48-TBGA 36TBGA 48TBGA/36TBGA 36TBGA 48TBGA 48TBGA 48TBGA 48TBGA 48TBGA 48TBGA 48TBGA 48-TBGA 48-FBGA 32TSOP1 32TSOP1 48-FBGA Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production

8M bit 4M bit

2M bit
UTRAM (HIGH DENSITY & LOW POWER)
Density 32M bit Part Number K1S321615M K1S321611C K1S321615A K1S161615M K1S1616B1M Organization 2Mx16 2Mx17 2Mx16 1Mx16 1Mx16 Vcc (V) 1.8 Speed (ns) 70 Operating Temp E I E I I Operating Current (mA) 35 Standby Current (uA) 60 Package 48-TBGA 48-FBGA 48-TBGA 48-TBGA 48-TBGA Production Status EOL Mass Production Mass Production Mass Production Mass Production

16M bit

HIGH SPEED (4M BIT) ASYNCHRONOUS FAST SRAM
Density 4M bit Part Number K6R4016C1D K6R4016V1D K6R4004C1D K6R4004V1D K6R4008C1D K6R4008V1D K6R3024V1D K6R1008V1D K6R1008C1D K6R1004V1D K6R1004C1D K6R1016V1D K6R1016C1D Organization 256Kx16 256Kx16 1Mx4 1Mx4 512Kx8 512Kx8 128x24 128x8 128x8 256x4 256x4 64x16 64x16 Vcc (V) 5 3.3.3.3 3.3 3.3.3.Speed (ns) 10, 12 8, 10 10, 12 8, 10 10, 12 8, 10 9, 10, 12 8, 10, 12 10, 12, 15 8, 10, 12 10, 12, 15 8, 10, 12 10, 12, 15 Operating Temp C,I C,L,I,P C,I C,I C,I,P C,I C,I C,I C,I C,I C,I C,I C,I Operating Current (mA) 65, 55 80, 65 65, 55 80, 65 65, 55 80, 65 170,150,130 170,150,130 170,150,130 170,150,130 170,150,130 170,150,130 170,150,130 Standb y Current (uA) 20, 5 20, 5(1.2) 20, 5 20, 5 20, 5 20, 5 40,15 20,5 20,5 20,5 20,5 20,5 20,5 Package 44SOJ, 44TSOP2, 48TBGA 44SOJ, 44TSOP2, 48TBGA 32 SOJ 32 SOJ 36 SOJ, 44 TSOPSOJ, 44 TSOP2 119PBGA 32SOJ,32TSOP2 32SOJ,32TSOP2 32SOJ 32SOJ 44SOJ,44TSOP2,48TBGA 44SOJ,44TSOP2,48TBGA Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production

SPB & FT (4M BIT) NTRAM
Part Number K7N403601B K7N401801B K7N403609B K7N401809B Organization 128Kx36 256Kx18 128Kx36 256Kx18 Operating Mode SPB SPB SPB SPB Vdd (V) 3.3 3.3 3.3 3.3 Access Time tCD(ns) 3.5, 4.2 3.5, 4.2 2.6, 3.0 2.6, 3.0 Speed tCYC (MHz) 167,133 167,133 250,200 250,200 I/O Voltage (V) 3.3,2.5 3.3,2.5 3.3,2.5 3.3,2.5 Package 100 TQFP 100 TQFP 100 TQFP 100 TQFP Production Status Mass Production Mass Production Mass Production Mass Production
LATE WRITE R-R (16M BIT) SRAM
Part Number K7P161866A K7P163666A Organization 1Mx18 512Kx36 Operating Mode SP SP Vdd (V) 2.5 2.5 Access Time tCD(ns) 2 1.6 Speed tCYC (MHz) 250 300,250 I/O Voltage (V) 1.5 (Max 1.9) 1.5 (Max.1.9) Package 119BGA 119BGA Production Status Mass Production Mass Production
LATE WRITE R-R (8M BIT) SRAM
Part Number K7P801811B K7P801866B K7P803611B K7P803666B K7P801822B K7P803622B Organization 512Kx18 512Kx18 256Kx36 256Kx36 512Kx18 256Kx36 Operating Mode SP SP SP SP SP SP Vdd (V) 3.3 2.5 3.3 2.5 3.3 3.3 Access Time tCD(ns) 1.5,1.6,2.0 1.5,1.6,2.0 1.5,1.6,2.0 1.5, 1.6, 2.0 1.5, 1.6, 2.0 3.3,2.5,2.0 Speed tCYC (MHz) 333,300,250 333,300.25 333,300,250 333, 300,250 333, 300,250 250,200,166 I/O Voltage (V) 1.5 (Max.2.0) 1.5 (Max.2.0) 1.5 (Max.2.0) 1.5 (Max 2.0) 2.5/3.3 2.5/3.3 Package 119BGA 119BGA 119BGA 119BGA 119BGA 119BGA Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production
LATE WRITE R-R &R-L (4M BIT) SRAM
Part Number K7P401822B K7P401823B K7P403622B Organization 256Kx18 256Kx18 128Kx36 Operating Mode SP SP SP Vdd (V) 3.3 3.3 3.3 Access Time tCD(ns) 2.5,2.7,3.0 6.5 2.5,2.7,3.0 Speed tCYC (MHz) 250,200,250,200,167 I/O Voltage (V) 2.5/3.3 2.5/3.3 2.5/3.3 Package 119BGA 119BGA 119BGA Production Status Mass Production Mass Production Mass Production

DDR1 (16MB) SRAM

Part Number K7D161874B K7D163674B Organization 1Mx18 512Kx36 Vdd (V) 1.8~2.5 1.8~2.5 Access Time tCD (ns) 2.3 2.3 Cycle Time (MHz) 330/300 330/300 I/O Voltage (V) 1.5 1.5 Package 153BGA 153BGA Production Status ES Samples ES Samples

DDR1 (8MB) SRAM

Part Number K7D803671B K7D801871B Organization 256Kx36 512Kx18 Vdd (V) 2.5 2.5 tCD (ns) 1.7/1.9/2.1 1.7/1.9/2.1 Access Time (MHz) 333/330/250 333/330/250 Cycle Time Voltage (V) 1.5(Max 2.0) 1.5(Max 2.0) I/O Package 153BGA 153BGA Production Status Mass Production Mass Production

DDR1 (16MB) CIO/SIO SRAM

Number K7I161882B K7I161884B K7J161882B K7J163682B K7I163682B K7I163684B Part Organization 1Mx18 1Mx18 1Mx18 512Kx36 512Kx36 512Kx36 Vdd (V) 1.8 1.8 1.8 1.8 1.8 1.8 tCD (ns) 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.50
2. 4B stands for Burst of 4
Access Time (MHz) 250,200,167 250,200,167 250,200,167 250,200,167 250,200,167 250,200,167
Cycle Time Voltage (V) 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8
I/O Package 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA

Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production
Comments CIO-2B CIO-4B SIO-2B SIO-2B CIO-2B CIO-4B
NOTES: 1. 2B stands for Burst of 2

3. SIO is Separate I/O

4. CIO is Common I/O

QDR (16M BIT) SRAM

Part Number K7R160982B K7R161882B K7R161884B K7Q161852A K7Q161854A K7Q161882A K7Q161884A K7Q161862B K7Q161864B K7R163682B K7R163684B K7Q163652A K7Q163654A K7Q163682A K7Q163684A K7Q163662B K7Q163664B Organization 2Mx9 1Mx18 1Mx18 1Mx18 1Mx18 1Mx18 1Mx18 1Mx18 1Mx18 512Kx36 512Kx36 512Kx36 512Kx36 512Kx36 512Kx36 512Kx36 512Kx36 Vdd (V) 1.8 1.8 1.8 2.5 2.5 1.8 1.8 1.8v / 2.5v 1.8v / 2.5v 1.8 1.8 2.5 2.5 1.8 1.8 1.8v / 2.5v 1.8v / 2.5v Access Time tCD (ns) 0.45,0.50 0.45,0.50 0.45,0.45,0.50 2.5,3.0 2.5,3.0 2.7,3.0 2.5,3.0 2.5 2.5 0.45,0.50 0.45,0.45,0.50 2.5,3.0 2.5,3.0 2.7,3.0 2.5,3.0 2.5 2.5 Cycle Time (MHz) 200,167 200,167 250,200,167 167,133 167,133 167,133 167,167 200,167 250,200,167 167,133 167,133 167,133 167,167 I/O Voltage (V) 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 Package 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 169FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Comments QDR II - 2B QDR II - 2B QDR II - 4B QDR I - 2B QDR I - 4B QDR I - 2B QDR I - 4B QDR I - 2B QDR I - 4B QDR II - 2B QDR II - 4B QDR I - 2B QDR I - 4B QDR I - 2B QDR I - 4B QDR I - 2B QDR I - 4B

DDR2 CIO/SIO (32MB) SRAM

Number K7I321882M K7I321884M K7J321882M K7I323682M K7I323684M K7J323682M Part Organization 2Mx18 2Mx18 2Mx18 1Mx36 1Mx36 1Mx36 Vdd (V) 1.8 1.8 1.8 1.8 1.8 1.8 tCD (ns) 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.50
Comments CIO-2B CIO-4B SIO-2B CIO-2B CIO-4B SIO-2B

QDR (32M BIT) SRAM

Part Number K7R320982M K7R321882M K7R321884M K7R323682M K7R323684M Organization 4Mx9 2Mx18 2Mx18 1Mx36 1Mx36 Vdd (V) 1.8 1.8 1.8 1.8 1.8 Access Time tCD (ns) 0.45,0.50 0.45,0.50 0.45,0.45,0.50 0.45,0.50 0.45,0.45,0.50 Cycle Time (MHz) 200,167 200,167 250,200,167 200,167 250,200,167 I/O Voltage (V) 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 Package 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Comments QDR II-2B QDR II-2B QDR II-4B QDR II-2B QDR II-4B
SRAM Ordering Information
ASYNCHRONOUS SRAM ORDERING INFORMATION
K 1 1. Memory (K) 2. Async SRAM : 6 3. Small Classification E : Corner Vcc/Vss + Fast SRAM F : fCMOS Cell + LPSRAM H : High Speed(LPSRAM) X : High Voltage(LPSRAM) J : BICMOS L : Poly Load Cell + LPSRAM R : Center Vcc/Vss + Fast SRAM T : TFT Cell + LPSRAM 4~5. Density 06 : 64K 10 : 1M 30 : 3M 60 : 6M 6~7. Organization 01 : x: x: x32 8. Vcc 5 : 1.5V Q : VDD 3.0V/VDDQ 1.8V R : 1.65V~2.2V S : 2.5V V : 3.3V 9. Mode 1 : CS Low Active 2 : CS1, CS2 - Dual Chip Select Signal 3 : Single Chip Select with /LB,/UB(tOE) 4 : Single Chip Select with /LB,/UB(tCS) 5 : Dual Chip Select with /LB,/UB(tOE) 6 : Dual Chip Select with /LB,/UB(tCS) 7 : I/Os Control with /BYTE 8 : CDMA Function 9 : Multiplexed Address A : Mirror Chip Option 10. Generation M : 1st Generation A : 2nd Generation B : 3rd Generation C : 4th Generation D : 5th Generation JULY 2004 BR-04-ALL-005 SAMSUNG SEMICONDUCTOR, INC. T : 2.7V~3.6V W : 2.2V~3.3V 13. 1st Chip Speed - COMMON (Temp,Power) A : Automotive,Normal B : Commercial,Low Low C : Commercial,Normal D : Extended,Low Low E : Extended,Normal F : Industrial,Low Low I : Industrial,Normal L : Commercial,Low M : Military,Normal N : Extended,Low P : Industrial,Low Q : Automotive,Low R : Industrial,Super Low T : Extended,Super Low U : Commercial,Ultra Super Low 0 : NONE,NONE 17~18. Customer (Special handling) code 16. Packing Packing Type Reference U : 3.0V C : 5.0V 04 : x: x: x: x: 256K 16 : 16M 32 : 32M 64 : 64M 09 : 512K 20 : 2M 40 : 4M 80 : 8M * Exception - 1MFSRAM B-ver 32-SOJ-300 > S 28-SOJ-300 > S - 512K/1M/2M/4M LPSRAM 32-TSOP1-0813.4F > Y 32-TSOP1-0813.4 > Y 32-TSOP1-0813.4R > N - 4M LPSRAM 32-TSOP2-400F > V 32-TSOP2-400R > M A : TBGA(LF) C : CHIP BIZ E : TBGA G : SOP J : SOJ L : TSOP1-0813.4F(LF) P : TSOP1-0820F(LF) Q : TSOP2-400R(LF) T : TSOP W : WAFER R : TSOP-R U : TSOP2-400(LF) Z : UBGA B : SOP(LF) D : DIP F : FBGA H : BGA K : SOJ(LF) 11. " ----" 12. Package X 3 X 4 X 5 X 6 X 7 X 8 X 9 X X 12 X 13 X 14 X 15 X 16 X 17 X 18 E : 6th Generation F : 7th Generation G : 8th Generation H : 9th Generation - WAFER, CHIP BIZ Level Division 0 : NONE,NONE 1 : Hot DC sort 2 : Hot DC,selected AC sort 3 : Cold/Hot DC,selected AC sort 14~15. Speed (tAA) - fCMOS Cell + LPSRAM & Poly Load Cell + LPSRAM & TFT Cell + LPSRAM 10 : 100ns 12 : 120ns 15 : 150ns 25 : 25ns(only fCMOS Cell) 30 : 300ns 35 : 35ns(except Poly Load Cell) 45 : 45ns(except fCMOS Cell) 55 : 55ns 60 : 60ns(only fCMOS Cell) 70 : 70ns 85 : 85ns 90 : 90ns(only fCMOS Cell) DS : Daisychain Sample - High Speed (LPSRAM) 20 : 20ns - High Voltage (LPSRAM) 55 : 55ns 10 : 10ns 15 : 15ns 25 : 25ns 45 :45ns - BICMOS & Center Vcc/Vss + Fast SRAM 06 : 6ns 10 : 10ns 15 : 15ns 25 : 25ns 30 : 30ns(only Center Vcc/Vss + Fast SRAM) 35 : 35ns(only Center Vcc/Vss + Fast SRAM) 7A : 7.2ns(only BICMOS) 8A : 8.6ns(only BICMOS) DS : Daisychain Sample - Async SRAM COMMON 00 : NONE (Containing Wafer, CHIP BIZ, Exception code) 08 : 8ns 12 : 12ns 17 : 17ns 09 : 9ns 13 : 13ns 20 : 20ns 70 : 70ns 12 : 12ns 17 : 17ns 30 : 30ns 85 : 85ns 13 : 13ns 20 : 20ns 35 : 35ns - Corner Vcc/Vss + Fast SRAM 25 : 25ns

LF35 L35H L35

ASIC CORE LIBRARY
Samsungs deliverables for embedded cores include Verilog/VHDL models, synthesis models, and wire-bonded test chips, including packaged ARM core, TeakDSPCore, Video Encoder/Decoder, and Ethernet10/100BT MAC/PHY. A software development toolkit, featuring an assembler, a debugger, a compiler and a linker is available. Samsungs ASIC Core Library arsenal provides the following cores and macrocells: I/O LIBRARY --------0.35m-------- 0.25m STD90 / STDM90 STD110 A A A A A A NA G A NA NA NA A A NA NA AR AR A AR G G A NA G AR A A A A A A AR AR AR A D NA A A 0.18m STD130 A A A G NA NA AR AR AR AR AR NA AR A A AR AR AR NA A --------0.13m-------STD150HS A A A G NA NA AR G AR G G NA AR A A AR G AR NA A STD150G A A A G NA NA AR AR AR G G NA AR A A AR G AR NA A STD150LP A A A G NA NA AR AR AR G G NA AR A A AR G AR NA A

I/O I/O-IP

CMOS, TTL I/O Buffers 3/5V tolerant Slew control PVT impedance control True 5V I/O AGP4X ATA5 ATA6 CardBus/PCI GTL HSTL IEEE1284 LVDS OSC (KHz) OSC (MHz) PCI PECL SSTL Ultra2- SCSI (LVD) USB1.1
NOTES: * I/O review sheet (I/O interface for I/O-IP review sheet in NCTS (New Cell Traveler Sheet) 1 A = Available 6 E = Under development (design and layout will be finished by the date) 2 AR = Available upon Request 7 F = Scheduled (design and layout will be finished by the date) 3 B = Under test (test will be finished by the date) 8 G = Will be developed based upon customer's request (SEC has more than 90% confidence for silicon result) 4 C = In fabrication line (fab. out date) 9 TBD = To Be Determined 5 D = GDS is available but silicon has not been verified 10 NA = Not Available (SEC has more than 90% confidence in silicon result) * For further information, please contact: jhprk@samsung.co.kr

ASIC DIGITAL CORE

DSP Cores
SSP1820 (OAK Compatible 16-Bit DSP Core) TeakLite (TeakLite Compatible 16-Bit DSP Core) Teak (Teak Compatible 16-Bit DSP Core)

CPU Cores

SAM17(8)X (ARM7TDMI Compatible RISC Processor) SAM40X (ARM9TDMI Compatible RISC Processor) SAM42X (ARM920T Compatible RISC Processor) SAM44X (ARM940T Compatible RISC Processor)

Interface Cores

USB1.1 Function Controller USB2.0 Function Controller USB1.1 Host Controller USB FS OTG Controller USB2.0 Phy (L18) USB2.0 Phy (L13)

BUS Architecture

AMBA2.0 (Micro Pack v2.0) AMBA3.0 (ADK)
ARM920T (ARM920T Compatible RISC Processor) ARM940T (ARM940T Compatible RISC Processor) ARM926EJS (ARM926EJ-S Compatible RISC Processor) ARM1020E (ARM1020E Compatible RISC Processor) ETM9 (Embedded Trace Macrocell for ARM9 core) ETM7 (Embedded Trace Macrocell for ARM7 core) ARM946E-S (ARM946E-S Compatible RISC Processor) ARM7TDMI-S (ARM7TDMI-S Compatible RISC Processor) ARM1136JF-S (ARM1136JF-S Compatible RISC Processor)

IEEE1394a Link IEE1394a DV Link IEEE1394a Phy (L18) PCI Bridge PCI Device PCI2AHB Ethernet MAC (10/100)
ASIC LINE-UP TABLE FOR COMPILED MEMORY
STD90 L35 SPSRAM SPSRAMBW SPSRAMR DPSRAM DPSRAMBW DPSRAMR SPARAM SPARAMBW ARFRAM SRFRAM DROM @ Active MROM @ Met-2 VROM @ Via-1 FIFO CAM HCSPSRAM HCVROM @ Via-1 HD A A NA A NA NA A NA NA NA A A NA NA NA NA NA HD A A NA A NA NA A NA A NA A A NA NA NA NA NA STD110 -----L25----LP A NA NA A NA NA A NA NA NA A A NA NA NA NA NA MDL120 LD25 HD HD A A A A NA A A A NA A NA NA NA NA NA A NA A NA NA A A A A NA NA NA A NA A NA A NA A STD130 -----L18----LP A A NA A A NA NA NA NA NA NA NA NA NA NA NA NA HD A A A A A NA NA A NA NA A A NA A A NA NA STDL130 -----L18L----LP A A NA A A NA NA NA NA NA NA NA NA NA NA NA NA HD A A A A A A NA NA NA A NA NA A AR AR AR AR STDH150 -----L13HS----LP NA NA NA NA NA NA NA NA NA NA NA NA NA NA NA NA NA STD150 -----L13G-----HD LP A A A A A A A A A A A A NA NA NA NA NA NA A NA NA NA NA NA A NA AR NA A NA A NA A NA STDL150 -----L13LP----HD LP AR A AR A AR A AR A AR A AR A AR NA AR NA NA NA A NA NA NA NA NA A NA AR NA AR NA AR NA AR NA
NOTES: A = Available AR = Available Upon Request E = Under Development (design and layout will be finished by the date) NA = Not Available

ASIC MIXED SIGNAL IP

High Resolution and Performance for Mixed Signal Cores (Based on Silicon Proven)
ADC: 1.8V 8-bit 250MHz ADC 1.8V 10-bit 150MHz ADC 3.3V 14-bit 80MHz ADC" DAC: 3.3V 8-bit 300MHz DAC 3.3V 12-bit 80MHz DAC 3.3V 14-bit 40NHz DAC" 1.2V 8-bit 80MHz DAC" PLL : 3.3V 800MHz FSPLL 1.8V 200MHz Pixel Clock Gen 1.2V 230MHz Dithered PLL" CODEC : 3.3V 16-bit Audio DAC 3.3V 16-bit Audio CODEC" CODEC : 2.5V 16-bit Audio DAC PLL : 1.2V 100M/300M/500M FSPLL DAC : 1.2V 8-Bit 2MHz DAC The Shortest TAT for Customer Specific Cores
Low Voltage Mixed Signal Cores for SoC
ADC : 1.2V 8-Bit 30MHz ADC 1.2V 10-bit 100MHz ADC"
Full Customer Support Specific Cores
Support for Various Kinds of MSC Architectures
ASIC DESIGN TOOLS AND METHODOLOGY / ASIC PACKAGING AND TESTABILITY

ASIC Ordering Information
ASIC ORDERING INFORMATION
K 1 1. System LSI (S) 2. Large Classification : ASIC (4) 3. Small Classification X 3 X 4 X 5 X 6 X 7 X 8 X 9 X X 12 X 13 X 14 14. Packing X 15 X 16 X 17 X 18 12. Package Type
B : BGA D : DIP F : BCC H : SBGA K : CTBGA M : QFPH
C : CHIP BIZ E : LQFP G : PQ2 J : ELP L : TBGA P : PLCC R : TSSOP T : TQFP V : SSOP X : ETQF Z : TEBGA
B : Tube R : Tray S : Tape & Reel Reverse D : Chip Biz (3 Inch tray) E : Chip Biz (4 Inch tray) W : WF Biz Draft Wafer X : WF Biz Full Cutting
U : Bulk T : Tape & Reel C : Chip Biz
3 : MCP C : COT D : MDL F : MFL H : Gate Array T : Embeded Cell

L : STD Cell

Q : QFP S : SOP U : LGA W : WAFER Y : FBGA

13. Reserved

7 : Tape & Reel (Pb-Free PKG) 8 : Tray (Pb-Free PKG) 9 : Tube (Pb-Free PKG)

15. Custom

Serial No

8. Version

*1st Version X 9~10. Mask Option 11. " - " - PKG Option
Modify- Bonding , Marking , EDS Option , PKG Type or PKG Option => Serial Number (0,1,2,3.A,B,C.)
0 : none 1 : PKG Option : PKG Option 2

LCD Driver IC

STN CHARACTER LCD DRIVER ICS
Part Number S6A0031 S6A0032 S6A0065 S6A0069 S6A0070 S6A0071 S6A0072 S6A0073 S6A0074 S6A0075 S6A0078 S6A0079 S6A0090 S6A0093 S6A0094* S6A2068

NOTES: 1. 2.

Segment 60

Common 34 16

CG ROM (Ch.) 10160 (254) 10160 (254) 10080 (236) 8320 (224) 8400 (240) 9600 (240) 9600 (240) 9600 (240) 9600 (240) 9600 (240) 9600 (240) 10240 (256) 10240 (256) 21760 (544) 8320 (224)
CGRAM (Ch.) 80 (2) 80 (2) 512 (8) 512 (8) 512 (8) 160 (4) 512 (8) 512 (8) 512 (8) 512 (8) 512 (8) 160 (4) 320 (8) 80 (6) 512 (8)
Interface (Bit) 4/8 4/8 4/8 4/8 4/8 4/8 1/4 1/4 1/4 1/4 1/4 1/4 1/4 1/4 4/8
VDD (V) 2.4~5.5 2.4~5.5 2.7~5.5 2.7~5.5 2.7~5.5 2.4~5.5 2.7~5.5 2.7~5.5 2.7~5.5 2.7~5.5 2.7~5.5 2.7~5.5 2.4~5.5 2.4~5.5 2.2~3.6 2.7~5.5

Vlcd (Max. V) 7 10

DC/DC Convert (Times)
2 2~3 2~3 2~3 2~3 2~3 2~4
Package Au bump chip Au bump chip Bare die/64QFP Bare die/80QFP Bare die/Au bump chip Au bump chip/TCP Au bump chip Bare die Bare die Bare die Bare die/TCP Bare die Au bump chip/TCP Au bump chip/TCP Au bump chip Bare die/

208 208

5/7 3/3 3/3 5/4
BT/WT/8TCx2 BT/WDT/8Tx2 BT/WDT/8Tx2 BT/WDT/8Tx2

SIO IIC, SIO

32/4 -

8x8 10x5 10x12

(10x1) (10x1)

8MHz 10MHz 10MHz

2.0 ~ 5.5 2.7 ~ 5.5 2.7 ~ 5.5 1.8 ~ 5.5
-25 ~ 85 -25~ 85 -25~ 85 -25~ 85

12x2,(8x1) 16MHz

BT/WDT/8T

3.0 ~ 5.5

-25~ 85

1/2 2/2

BT/8TC BT/8TC

10x3 10x9

10MHz 10MHz

2.0 ~ 5.5 2.0 ~ 5.5

-25~ 85 -25~ 85

7/2 7/3

BT/8TC BT/8TC BT/8TX1
LIN, UART LIN, UART UART 19/8

10x3 10x9 10x9

10x1 8x1

10MHz 10MHz 10MHz

2.0 ~ 5.5 2.0 ~ 5.5 2.2 ~ 5.5

-40~ 85 -40~ 85 -25 ~ 85

38/36/26 6/4

BT/8TCx3/16TC

SIO UART

12x1(8x1) 16MHz

1.8~5.5

15/14 10/14

BT/WDT/8T 8BT/8WDT/8TC

USB USBSIO

4.0 ~ 5.25 4.0 ~ 5.25
Package ROM Part Number Type S3C9xxx (KS86) Series S3C80A5AZ0-SMB8 24SOP S3C80A5AZ0-AMB8 24SDIP S3C80A5AZ0-SMB5 24SOP S3C80A5AZ0-AMB5 24SDIP S3C80B5XZ0-SMB8 24SOP S3C80B5XZ0-AMB8 24SDIP S3C80B5XZ0-SMB5 24SOP S3C80B5XZ0-AMB5 24SDIP S3C80C5XZ0-SMB8 24SOP S3C80C5XZ0-AMB8 24SDIP S3C80C5XZ0-SMB5 24SOP S3C80C5XZ0-AMB5 4SDIP S3C80D5XZ0-SMB8 24SOP S3C80D5XZ0-AMB8 24SDIP S3C80DXZ0-SMB5 24SOP S3C80D5XZ0-AMB5 24SDIP S3C80E7XZ0-AOB5 32SDIP S3C80E7XZ0-SOB5 32SOP S3C80E7XZ0-DPB5 40DIP S3C80E7XZ0-AOB7 32SDIP S3C80E7XZ0-SOB7 32SOP S3C80E7XZ0-DPB7 40DIP S3C80F9XZ0-SOB7 32SOP S3C80F9XZ0-AQB7 42SDIP S3C80F9XZ0-QZR7 44QFP / 48ELP S3C80F9XZ0-SOB9 32SOP S3C80F9XZ0-AQB9 42SDIP S3C80F9XZ0-QZR9 44QFP S3C80F9XZ0-LRR9 48ELP S3C80G9XZ0-SOB7 32SOP S3C80G9XZ0-AQB7 42SDIP S3C80G9XZ0-QZR7 44QFP S3C80G9XZ0-SOB9 32SOP S3C80G9XZ0-AQB9 42SDIP S3C80G9XZ0-QZR9 44QFP 32SOP S3C8095DZ0-SOB5 S3C8095DZ0-AOB5 32SDIP S3C8235BZ0-QTR8 64QFP 64LQFP S3C8235BZ0-ETR8 S3C8235BZ0-QTR5 64QFP 64LQFP S3C8235BZ0-ETR5 S3C8245AZ0-TWR8 80TQFP S3C8245AZ0-QWR8 80QFP S3C8245AZ0-TWR5 80TQFP S3C8245AZ0-QWR5 80QFP S3C8249XZ0-TWR7 80TQFP S3C8249XZ0-QWR7 80QFP S3C8249XZ0-TWR7 80TQFP S3C8249XZ0-QWR7 80QFP RAM Interrupt Timer/ Serial Interface LCD ADC PWM(1) Max. OSC. Freq. 8MHz Vdd (V) Oper. Temp. Kbytes Bytes I/O Pins (Int/Ext) Counter 26 5/12 BT/WDT/8Tx2/16T 8x1 8MHz 2.1~5.5 -25 ~ 19 5/8 BT/WDT/8Tx2/16T 8x1 8MHz 2.0 ~ 3.6 -25 ~ 19 5/8 BT/WDT/8Tx2/16T 8x1 4MHz 1.7 ~ 3.6 -25 ~ 19 5/8 BT/WDT/8Tx2/16T 8x1 4MHz 1.7 ~ 3.6 -25 ~ 19 5/8 BT/WDT/8Tx2/16T (Seg/Com) (Bit x Ch) (Bit x Ch) 8x1

2.0 ~ 3.6 -25 ~ 85

BT/8TC/16TC

2.0 ~ 5.0 -25 ~ 85

1.7 ~ 5.0 -25 ~ 85

552 544

5/12 8/8 8/8 8/8

Wafer/CHIP BIZ = 0(NONE)

- SDIP

C : 52

B : 56 Q : 42
M : 24 T : 64 C : 83 H : 16 N : 28 D : 160 J : 176 W : 80
O : 32 V : 30 J : 176 I : 18 P : 40 E : 208 R : 48 X : 100
A : 128 E : 208 T : 64 X : 100

A : 88

C:8 K : 20

- LQFP

C:8 K : 20 O : 32

- TQFP

C : 144 G : 256 T : 64

- WQFP

A : 128 X : 100

- TEBGA

T : 64
W : : 0K byte 1 : 1K byte 2 : 2K byte 3 : 12K byte 4 : 4K byte 5 : 16K byte 6 : 6K byte 7 : 24K byte

X : 492

- FBGA

A : 272

B : 416
A : 337 D : 160 G : 285 L : 400 Q : 289

- SBGA

B : 81 E : 208 H : 320 O : 272 T : 64
C : 144 F : 180 K : 105 P : 504
8 : 8K byte 9 : 32K byte A : 48K byte B : 64K byte C : 96K byte D : 128K byte E : Extemded F : 256K byte G : 384K byte H : 512K byte J : 1M byte M : Military X : Special MK3 MK2 Z : Special MK1 * Smart Card IC : EEPROM Size * X,Y,Z : Special Marking ( MASKROM) K : 1M byte N : Industrial Y : Special

J : 176

- BQFP

B : 132

A : 432

- WAFER

R : 48

- QFPH

T : 64 F : 240 D : 8CNCL

0 : None

1 : Cust1

2 : Cust2

D : 160
B : Tube U : Bulk R : Tray

EEPROMS

SERIAL EEPROMS
Write Cycle Part Number S524A40X20-RCT0 S524A40X21-DCB0 S524A40X21-SCB0 S524A40X21-SCT0 S524A40X41-DCB0 S524A40X41-SCB0 S524A40X41-SCT0 S524A60X51-DCB0 S524A60X51-SCB0 S524A60X51-SCT0 S524A60X81-DCB0 S524A60X81-SCB0 S524A60X81-SCT0 S524AB0X91-DCB0 S524AB0X91-SCB0 S524AB0X91-SCT0 S524AB0XB1-DCB0 S524AB0XB1-DCB1 S524AB0XB1-DCB2 S524AD0XF1-RCT0
Density (bit) 2K 2K 2K 2K 4K 4K 4K 16K 16K 16K 8K 8K 8K 32K 32K 32K 64K 64K 64K 256K
Write Protection by Hardware & Software by Hardware by Hardware by Hardware by Hardware by Hardware by Hardware by Hardware by Hardware by Hardware by Hardware by Hardware by Hardware by Hardware by Hardware by Hardware by Hardware by Hardware by Hardware by Hardware

COMBO SLIM DRIVE

SN-324
Recording Capacity 24X 24X 24X CD-RW + 8X DVD-ROM Drive Loading Type Interface Type Internal Type EIDE/ATAPI Drawer Type Average Access Time DVD: 110ms CD: 100ms Dimensions (WxHxDmm) Buffer Memory Drive Mounting Supported Disc
CD-RW Disc 700/650MB Type 80/74 CDR Disc 800/700/650MB (Type 90/80/74)

128 x 12.7 x 129 2MB

Horizontal/Vertical DVD-R. DVD-RW, DVD-RAM, DVD-ROM, DVD-Video, CD-R, CD-RW, CD-DA, CD-ROM, CD-ROM/XA, VideoCD, CD-I, Photo CD, CD-EXTRA, CD-TEXT

CD-ROM SLIM DRIVE

SN-124
Drive Type Internal Type 24X Multi-Read CD-ROM Slim Drive Disc Loading Diameter Interface Type 80mm / 120mm EIDE/ATAPI Drawer Type Average Access Time 110ms Dimensions (WxHxDmm) Buffer Memory Drive Mounting Supported Disc

128 x 12.7 x 129 128KB

Horizontal/Vertical CD-R, CD-RW, CD-DA, CD-ROM, CD-ROM/XA, VideoCD, CD-I, Photo CD, CD-EXTRA, CD-TEXT

ULTRA SLIM COMBO DRIVE

SU-408
Recording Capacity CD-RW Disc 700/650MB Type 80/74 CDR Disc 800/700/650/ 550MB (Type 90/80/74/63) Drive Type Internal Type Interface EIDE/ATAPI Loading Type Drawer Type Average Access Time DVD: 110ms CD: 100ms Dimensions (WxHxDmm) 128 x 9.5 x 129 Buffer Memory 2MB Drive Mounting Supported Disc
Horizontal/Vertical DVD-R. DVD-RW, DVD-ROM, DVD-Video, CD-R, CD-RW, CD-DA, CD-ROM, CD-ROM/XA, VideoCD, CD-I, Photo CD, CD-EXTRA, CD-TEXT

HARD DISK DRIVES (HDD)

Capacity SpinPoint V Series 80GB 120GB 160GB VL40P Series 40GB P80 Series 80GB 120GB 160GB P40 Series 40GB P80 Series SATA 80GB 120GB 160GB P40 Series SATA 40GB V80 Series Rotational Speed 5400 rpm 5400 rpm 5400 rpm 5400 rpm 7200 rpm 7200 rpm 7200 rpm 7200 rpm 7200 rpm 7200 rpm 7200 rpm 7200 rpm P/N SV0802N SV1203N SV1604N SV0411N SP0802N SP1203N SP1604N SP0411N SP0812C SP1213C SP1614C SP0411C # of Head # of Disk Interface ATA-133 ATA-133 ATA-133 ATA-133 ATA-133 ATA-133 ATA-133 ATA-133 S-ATA S-ATA S-ATA S-ATA Buffer Size 2MB / 8MB 2MB / 8MB 2MB / 8MB 2 MB 2MB / 8MB 2MB / 8MB 2MB / 8MB 2MB 8MB 8MB 8MB 2MB

SpinPoint P Series

2.5 HARD DISK DRIVES (HDD)
Capacity SpinPoint M Series M40 Series 30GB 40GB 60GB 80GB Rotational Speed 5400 rpm 5400 rpm 5400 rpm 5400 rpm P/N MP0302H MP0402H MP0603H MP0804H # of Head # of Disk Interface ATA-6 ATA-6 ATA-6 ATA-6 Buffer Size 8MB 8MB 8MB 8MB
REPRESENTATIVES AND DISTRIBUTORS

SECTION C

REPRESENTATIVES DISTRIBUTORS SAMSUNG SALES OFFICES

3c-4c 5c-7c 8c

BR-04-ALL-004

Representatives

R E P R E S E N TAT I V E S

REPRESENTATIVES

Rep Adelsa Headquarters (Mexico City) Region Mexico Address Adelsa Headquarters Hda. Corralejo 80 Bosque de Echegaray Naucalpan, Estado de Mexico 53310 Campo del Sandillal 9300 Col. Campo Bello Chihuahua , Chihuahua Mexico CP 31124 Av. 16 de Septimbre No. 2324 Oriente Col. Partido Romero Ciudad Juarez Mexico CP 32160 Calle del Rosario #643 Col. Jardines de los Arcos Guadalajara, Jalisco Mexico CP 44500 Paseo Virrey de Acuna No. 105 Rinconada Colonial, Apodaca Apodaca, Nuevo Leon Mexico CP SW Griffith Drive Suite #155 Beaverton, OR 154th Ave. NE Redmond, WA Hibert Street Suite 210 San Diego, CA Metro Drive Suite 101 Bloomington, MN Park Place NE III, #H, Cedar Rapids, IA Marty #200N Overland Park, KS 66212 PO Box 1945 Calle Ruiz Belvis #9 Altos Esq. Carro San German, PR NW 52nd Terrace Doral Center Miami FL 33166 Av. Brigadeiro Faria Lima Andar - Itaim Bibi 04538-905 Sao Paulo- SP Brazil 500 Winderley Pl. Ste. 100 Maitland, FL 31st Street Boulder, CO East 6400 South Suite 280 Murray, UT 84107 Phone 52-555-560-5002 Fax 52-555-363-1010

Adelsa Chihuahua Office

Mexico

52-614-498-8259

Adelsa Ciudad Juarez Office

52-656-611-8852

52-656-616-6570
Adelsa Guadalajara Office

52-33-3122-3054

52-33-3121-3635

Adelsa Monterrey Office

52-81-8386-3171

52-81-8386-4235

Advanced Technical Marketing, Inc. (ATMI) - Portland Office Advanced Technical Marketing, Inc. (ATMI) - Seattle Office Bestronics San Diego Office Customer 1st Minneapolis Office Customer 1st Cedar Rapids Office Customer 1st Kansas City Office Digit-Tech Sales Inc San Juan Office

503-643-8307

503-643-4364
425-869-7636 858-693-1111
425-869-9841 858-693-1963

952-851-7909

952-851-7907

NC NC SE

319-393-1351 913-385-0390 787-892-4260
952-851-7907 952-851-7907 787-892-3366
Digit-Tech Sales Inc. Miami Office Digit-Tech Sales Inc. Sao Paulo, Brazil Office Dyne-A-Mark Corporation Orlando Office Front Range Marketing, Inc. Denver Office Front Range Marketing, Inc. Salt Lake City Office
305-591-2400 5511-3443-6250
305-594-9878 5511-3443-6201

SE NW NW

407-660-1661 303-443-4780 801-288-2500
407-660-9407 303-447-0371 801-288-2505
Rep InTELaTECH, Inc. Toronto Office Region Canada Address 5225 Orbitor Drive Suite 2 Mississauga, Ontario Canada L4W 4YMt. McKenzie Drive South E Calgary, Alberta Canada T2Z 2MSt Regis Blvd, Suite 220 Suite 220 St. Laurent, Quebec Canada H9B 2MMarch Road Suite 203 Kanata, ON Canada K2K 2VEast First Street Meridian, ID Airport Parkway, Suite 150 San Jose, CA B Street Petaluma, CA Oval Drive Suite 169 Islandia, NY Van de Graaff Drive 4th Floor Burlington, MA South Memorial Parkway Huntsville, AL Langford Road Bld 300 Norcross, GA Six Forks Road, Suite 203B Raleigh, NC Sardis Road North, Suite 134 Charlotte, NC E. Gray Rd. Suite 600 Scottsdale, AZ 85260 Phone 905-629-0082 Fax 905-629-8910
InTELaTECH, Inc. Calgary Office InTELaTECH, Inc. Montreal Office

Canada

403-686-2268

403-686-6926

514-421-5833

514-421-4105

InTELaTECH, Inc. Ottawa Office

613-599-7330

613-271-0333
Intermountain Tech Boise Office I-Squared San Jose Office I-Squared Petaluma Office Neptune Electronics Company Inc. (NECCO) - Long Island Office New Tech Solutions Boston Office Rep One Associates, Inc. Huntsville Office Rep One Associates, Inc. Atlanta Office Rep One Associates, Inc. Raleigh Office Rep One Associates, Inc. Charlotte Office Summit Sales Phoenix Office

Package Dimension 10x11mm 10x11mm 11x13mm 11x18mm 11x18mm 11x18mm 11x18mm
DDR SDRAM 1U DIMM MODULES: REGISTERED
Org 64Mx72 128Mx72 256Mx72
B0 = DDR266 (133MHz @ CL=2.5) Type: 184-pin
Speed (Mbps) 333/400 333/400 333/400
A2 = DDR266 (133MHz @ Cl=2)
Composition (64Mx8)*9 (128Mx4)*18 (128Mx4)*36
Part Number M312L6523DZ3 - CB3/CCC M312L2920DZ3 -CB3/CCC M312L5720DZ3-CB3/CCC
Component Package FBGA FBGA FBGA

# Banks Module 2

Notes Pb-free Pb-free Pb-free
B3 = DDR333 (166MHz @ CL=2.5)
CC = DDR400 (200MHz @ CL=3)

DDR DRAM SODIMM MODULES

Density 512MB 1GB 1GB
Org 64Mx64 128MX64 128MX64
B0 = DDR266 (133MHz @ CL=2.5) Type: 200-pin, Double Sided

Speed (Mbps) 333

A2 = DDR266 (133MHz @ Cl=2) Height(in): 1.25
Composition (32M x 16)*4 (64M x 8)*16 (64M x 8)*16
Part Number M470L6524DU0-CB300 M470L2923BN0 - C(L)B3 M470L2923DV0-CB300

Notes Pb-free Pb-free

DDR SDRAM DIMM MODULES: UNBUFFERED
Density 512MB 512MB 1GB 1GB
Org 64MX64 64Mx72 128Mx64 128Mx72
Speed (Mbps) 333/400 333/400 333/400 333/400
A2 = DDR266 (133MHz @ Cl=2) Package: TSOP components
Composition (64M x8) *8 (64M x 8)*9 (64M x 8)*16 (64M x 8)*18
Part Number M368L6523DUS-CB3/CCC M381L6523DUM-CB3/CCC M368L2923DUN-CB3/CCC M381L2923DUM-CB3/CCC
Notes Pb-free Pb-free Pb-free Pb-free
B3 = DDR333 (166MHz @ CL=2.5) Voltage: 2.5V

DDR SDAM / SDRAM

DDR SDRAM COMPONENTS
Density 256M 256M 256M 256M 256M 256M 512M 512M 512M 512M 512M 512M 512M 512M
Org 64Mx4 64Mx4 32Mx8 32Mx8 16Mx16 16Mx16 128Mx4 128Mx4 64Mx8 64Mx8 64Mx8 32Mx16 32Mx16 32Mx16
B0 = DDR266 (133MHz @ CL=2.5)
Speed (Mbps) 266 333/400 333/400 333/400 333/400 333/400 333/400 333/400 333/400 333/400 333/400 333/400 333/400 333/400
Part Number K4H560438H-UC(L)B0 K4H560438H-ZC(L)CC/B3 K4H560838H-UC(L)B3/CCC K4H560838H-ZC(L)B3/CCC K4H561638H-UC(L)/B3/CCC K4H561638H-ZC(L)B3/CCC K4H510438D-ZC(L)B3/CCC K4H510438D-ZC(L)B3/CCC K4H510838D-UC(L)B3/CCC K4H510838D-ZC(L)B3/CCC K4H510838D-UC(L)B3/CCC K4H511638D-UC(L)B3/CCC K4H511638D-ZC(L)B3/CCC K4H511638D-UC(L)B3/CCC
Package 66 pin TSOP 60 ball FBGA 66 pin TSOP 60 ball FBGA 66 pin TSOP 60 ball FBGA 60 ball FBGA 60 ball FBGA 66 pin TSOP 60 ball FBGA 66 pin TSOP 66 pin TSOP 60 ball FBGA 66 pin TSOP
Notes Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free

1U SDRAM DIMM MODULES, PC133 / PC100 COMPLIANT: REGISTERED
LOW-PROFILE DIMMs (1.2-INCH HEIGHT)
Density 128MB** 256MB 512MB 1GB 1GB 2GB Org 16Mx72 32Mx72 64Mx72 128Mx72 128Mx72 256Mx72 Speed PC133 PC133 PC133 PC133 PC133 PC133
Type: 168 pin, Double sided
Composition (16x8)*9 (32Mx8)*9 (64Mx4)*18 (St.128Mx4)*18 (128Mx4)*18 (St.128Mx4)*18
Part Number M390S1723TU - C7A00 M390S3253HUU - C7A00 M390S6450HUU - C7A00 M390S2858ETU - C7A00 M390S2950DUU - C7A00 M390S5658DUU - C7A00

Voltage: 3.3V

# Banks Module 2 2

stacked, avail Q204

Refresh 4K 8K 8K 8K 8K 8K

Remarks

stacked
NOTES: St.= Stacked components

Package: TSOP Components

SDRAM SODIMM MODULES
Density 128MB 256MB 256MB 512MB 512MB Org 16Mx64 32Mx64 32Mx64 64Mx64 64Mx64 Speed PC133 PC133 PC133 PC133 PC133 Composition (8Mx16)*8 (16Mx16)*8 (32Mx16)*4 (32Mx16)*8 (64Mx8)*16

Interface: SSTL-2

Part Number M464S1724ITS-L7A00 M464S3254HUS-L7A00 M464S3354DUS-C(L)7A M464S6554DUS-C(L)7A M464S6453HV0-C75/L7500

# Banks: 4

Height (in) 1.15 1.25 1.25 1.18 1.25

Latency: CL6

Refresh: 8K/32ms

NOTES: DS = Double-Sided

L = Commercial Temp., Low Power
SDRAM DIMM MODULES, PC133 COMPLIANT: UNBUFFERED
Density 128MB 256MB 256MB 256MB 256MB 512MB 1GB Org 16Mx72 32Mx64 32Mx72 32Mx64 32Mx64 64Mx64 128Mx64 Speed (Mbps) PC133 PC133 PC133 PC133 PC133 PC133 PC133

Package: TSOP components

Composition 128M: (16Mx8)*9 256M: (16Mx8)*16 256M: (16Mx8)*18 256M: (32Mx8)*8 256M: (32Mx8)*8 256M: (32Mx8)*16 512M: (64Mx8)*16
Part Number M374S1723KUS-C7A00 M366S3323KUS- C7A00 M374S3323KUS-C7A00 M366S3253HUS-C7A00 M366S3253HUS-C7A00 M366S6453HUS-C7A00 M366S2953DUS-C7A00

NOTES: Type: 168 pin

SDRAM / MOBILE SDRAM

SDRAM COMPONENTS

Density 64Mb** 64Mb** 128Mb** 128Mb** 256Mb 256Mb 256Mb 512Mb 512Mb 512Mb 512Mb 512Mb Org 8Mx8 4Mx16 16Mx8 8Mx16 64Mx4 32Mx8 16Mx16 128Mx4 64Mx8 128Mx4 64Mx8 32Mx16 Speed (Mbps) 133 133/143/133/133 133/Part Number K4S640832K-UC(75)000 K4S641632K-UC(L)(75/60)000 K4S280832I-UC(L)(75)000 K4S281632I-UC(L)(75/60)000 K4S560432H-UC(L)(75)000 K4S560832H-UC(L)(75)000 K4S561632H-UC(L)(75/60)000 K4S510632D-UC(L)(75)000 K4S510732D-UC(L)(75)000 K4S510432D-UC(L)(75)000 K4S510832D-UC(L)(75)000 K4S511632D-UC(L)(75)000 Refresh 4K 4K 4K 4K 8K 8K 8K 8K 8K 8K 8K 8K Pkg TSOP Remarks

- DDR SGRAM (tCC: Default CL3) Component TAPE & REEL Other (Tray, Tube, Jar) Stack Component TRAY (Mask ROM) AMMO PACKING Module MODULE TAPE & REEL MODULE Other Packing

NAND Flash

NAND FLASH DISCRETE COMPONENTS
Density SLC NAND 256Mb 256Mb 512Mb 512Mb 1Gb 1Gb 2Gb 2Gb 4Gb 8Gb 16Gb 32Gb MLC NAND 8Gb 16Gb 32Gb 64Gb Part Number K9F5608x0D-PCB K9F5608x0D-JIB K9F1208x0C-PCB K9F1208x0C-JIB K9F1G08U0B-PCB K9F1G08R0B-JIB K9F2G08U0A-PCB K9F2G08R0A-JIB K9F4G08U0A-PCB K9K8G08U0A-PCB K9WAG08U1A-PCB K9NBG08U5A-PCB K9G8G08U0M-PCB K9LAG08U0M-PCB K9HBG08U1M-PCB K9MCG08U5M-PCB Organization x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 x8 Voltage(V) 1.8V; 3.3V 1.8V; 3.3V 1.8V; 3.3V 1.8V; 3.3V 3.3V 1.8V 3.3V 1.8V 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V Package TSOP48 BGA63 TSOP48 BGA63 TSOP48 BGA63 TSOP48 BGA63 TSOP48 TSOP48 TSOP48 TSOP48 TSOP48 TSOP48 TSOP48 TSOP48 Comments
DDP QDP DSP mono; moving to A-die DDP QDP DSP
Product charts for flash fusion memory products OneNAND, moviNAND and Flex-OneNAND are located on page 23.
NAND Flash Ordering Information
NAND FLASH ORDERING INFORMATION
K 1 1. Memory (K) 2. NAND Flash: 9 3. Small Classification (SLC: Single Level Cell, MLC: Multi Level Cell, SM: SmartMedia, S/B: Small Block) A: SLC + Muxed I/F Chip B: Muxed I/F Chip S: SLC Single SM D: SLC Dual SM Q: 4CHIP SM T: SLC SINGLE (S/B) E: SLC DUAL (S/B) R: SLC 4DIE STACK (S/B) F: SLC Normal G: MLC Normal K: SLC 2-Die Stack W: SLC 4-Die Stack J: Non-Muxed OneNAND U: 2 STACK MSP V: 4 STACK MSP 4~5. Density 12: 512M 28: 128M 40: 4M 64: 64M 1G: 1G 4G: 4G 00: NONE 6~7. Organization 00: NONE 16: x16 08: x8 16: 16M 32: 32M 56: 256M 80: 8M 2G: 2G 8G: 8G X 3 X 4 X 5 X 6 X 7 8. Vcc C: 5.0V(4.5V~5.5V) D: 2.65V(2.4V~2.9V) E: 2.3V~3.6V Q: 1.8V(1.7V~1.95V) T: 2.4V~3.0V U: 2.7V~3.6V V: 3.3V(3.0V~3.6V) W: 2.7V~5.5V,3.0V~5.5V 0: NONE 9. Mode O: Normal 1: Dual nCE & Dual Rn/B 4: Quad nCE & Single RnB A: Mask Option 1 10. Generation M: 1st Generation A: 2nd Generation B: 3rd Generation C: 4th Generation D: 5th Generation Y: Partial NAND(2nd) Z: Partial NAND(1st) M: 1st Generation A: 2nd Generation B: 3rd Generation C: 4th Generation D: 5th Generation Y: Partial NAND(2nd) Z: Partial NAND(1st) 11. -- 12. Package A: COB C: CHIP BIZ E: TSOP1(LF,1217) G: FBGA J: FBGA(LF) L: LGA P: TSOP1(LF) R: TSOP2-R T: TSOP2 W: WAFER B: TBGA D: 63-TBGA F: WSOP1(LF) H: TBGA(LF) K: TSOP1(1217) M: tLGA Q: TSOP2(LF) S: SMARTMEDIA V: WSOP Y: TSOP1 X 8 X 9 X X 12 X 13 X 14 X 15 X 16 X 17 X 18 13. Temp C: Commercial 0: NONE 14. Bad Block B: Include Bad Block D: Daisychain Sample L: 1~5 Bad Block N: Ini. All Good, Add. 10 Blocks S: All Good Block 0: NONE 15. NAND-Reserved 0: Reserved 16. Packing Type (16 digit) Common to all products, except of Mask ROM Divided into TAPE & REEL(In Mask ROM, divided into TRAY, AMMO Packing Separately) Type Packing Type New Marking T 0 (Number) S Y A P M I: Industrial

Component TAPE & REEL Other (Tray, Tube, Jar) Stack Component TRAY (Mask ROM) AMMO PACKING Module MODULE TAPE & REEL MODULE Other Packing

Asynchronous SRAM

UtRAM (High Density & Low Power)
Density 32Mbit Part Number K1S321611C K1S32161CD K1S32161BCD K1S32161CD Organization 2Mx16 2Mx16 2Mx16 2Mx16 Vcc (V) 1.Speed (ns) Operating Temp I I I E Operating Current (mA) Standby Current (uA) Package 48-FBGA 48-FBGA 48-FBGA 48-TBGA Production Status Mass Production Mass Production Mass Production Mass Production
HIGH-SPEED (4Mbit) ASYNCHRONOUS FAST SRAM
Density 4Mbit Part Number K6R4016C1D K6R4016V1D K6R4008C1D K6R4008V1D Organization 256Kx16 256Kx16 512Kx8 512Kx8 Vcc (V) 5 3.3.3 Speed (ns) Operating Temp I I I I Operating Current (mA) 65, 55 80, 65 65, 55 80, 65 Standby Current (uA) 20, 5 20, 5(1.2) 20, 5 20, 5 Package 44SOJ, 44TSOP2, 48TBGA 44SOJ, 44TSOP2, 48TBGA 36 SOJ, 44 TSOPSOJ, 44 TSOP2 Production Status Mass Production Mass Production Mass Production Mass Production
NOTE: Ordering Information: http://www.samsung.com/Products/Semiconductor/Support/Label_CodeInfo/Async_SRAM.pdf
Asynchronous SRAM Ordering Information
ASYNCHRONOUS SRAM ORDERING INFORMATION
K 1 1. Memory (K) 2. Async SRAM: 6 3. Small Classification E: Corner Vcc/Vss + Fast SRAM F: fCMOS Cell + LPSRAM H: High Speed(LPSRAM) X: High Voltage(LPSRAM) J: BICMOS L: Poly Load Cell + LPSRAM R: Center Vcc/Vss + Fast SRAM T: TFT Cell + LPSRAM 4~5. Density 06: 64K 10: 1M 30: 3M 60: 6M 6~7. Organization 01: x1 16: x16 32: x32 8. Vcc 5: 1.5V Q: VDD 3.0V/VDDQ 1.8V R: 1.65V~2.2V S: 2.5V T: 2.7V~3.6V V: 3.3V W: 2.2V~3.3V 9. Mode 1: CS Low Active 2: CS1, CS2 - Dual Chip Select Signal 3: Single Chip Select with /LB,/UB(tOE) 4: Single Chip Select with /LB,/UB(tCS) 5: Dual Chip Select with /LB,/UB(tOE) 6: Dual Chip Select with /LB,/UB(tCS) 7: I/Os Control with /BYTE 8: CDMA Function 9: Multiplexed Address A: Mirror Chip Option 13. 1st Chip Speed - COMMON (Temp,Power) A: Automotive,Normal B: Commercial,Low Low C: Commercial,Normal D: Extended,Low Low E: Extended,Normal F: Industrial,Low Low I: Industrial,Normal L: Commercial,Low M: Military,Normal N: Extended,Low P: Industrial,Low Q: Automotive,Low R: Industrial,Super Low T: Extended,Super Low U: Commercial,Ultra Super Low 0: NONE,NONE - WAFER, CHIP BIZ Level Division 0: NONE,NONE 1: Hot DC sort 2: Hot DC,selected AC sort 3: Cold/Hot DC,selected AC sort C: 5.0V 04: x4 18: x18 08: x8 24: x24 * Exception - 1MFSRAM B-ver 32-SOJ-300 > S 28-SOJ-300 > S - 512K/1M/2M/4M LPSRAM 32-TSOP1-0813.4F > Y 32-TSOP1-0813.4 > Y 32-TSOP1-0813.4R > N - 4M LPSRAM 32-TSOP2-400F > V 32-TSOP2-400R > M 08: 256K 16: 16M 32: 32M 64: 64M 09: 512K 20: 2M 40: 4M 80: 8M X 3 X 4 X 5 X 6 X 7 X 8 X 9 X X 12 X 13 X 14 X 15 X 16 X 17 X 18 10. Generation M: 1st Generation A: 2nd Generation C: 4th Generation E: 6th Generation G: 8th Generation 11. " ----" 12. Package A: TBGA(LF) C: CHIP BIZ E: TBGA G: SOP J: SOJ L: TSOP1-0813.4F(LF) P: TSOP1-0820F(LF) Q: TSOP2-400R(LF) T: TSOP W: WAFER B: SOP(LF) D: DIP F: FBGA H: BGA K: SOJ(LF) B: 3rd Generation D: 5th Generation F: 7th Generation H: 9th Generation 14~15. Speed (tAA) - fCMOS Cell + LPSRAM & Poly Load Cell + LPSRAM & TFT Cell + LPSRAM 10: 100ns 12: 120ns 15: 150ns 25: 25ns(only fCMOS Cell) 30: 300ns 35: 35ns(except Poly Load Cell) 45: 45ns(except fCMOS Cell) 55: 55ns 60: 60ns(only fCMOS Cell) 70: 70ns 85: 85ns 90: 90ns(only fCMOS Cell) DS: Daisychain Sample - High Speed (LPSRAM) 20: 20ns 25: 25ns - High Voltage (LPSRAM) 55: 55ns 70: 70ns 85: 85ns - Corner Vcc/Vss + Fast SRAM 10: 10ns 12: 12ns 13: 13ns 15: 15ns 17: 17ns 20: 20ns 25: 25ns 30: 30ns 35: 35ns 45 :45ns - BICMOS & Center Vcc/Vss + Fast SRAM 06: 6ns 08: 8ns 09: 9ns 10: 10ns 12: 12ns 13: 13ns 15: 15ns 17: 17ns 20: 20ns 25: 25ns 30: 30ns(only Center Vcc/Vss + Fast SRAM) 35: 35ns(only Center Vcc/Vss + Fast SRAM) 7A: 7.2ns(only BICMOS) 8A: 8.6ns(only BICMOS) DS: Daisychain Sample - Async SRAM COMMON 00: NONE (Containing Wafer, CHIP BIZ, Exception code) 16. Packing Type (16 digit) - Common to all products, except of Mask ROM - Divided into TAPE & REEL(In Mask ROM, divided into TRAY, AMMO Packing Separately) Type Packing Type New Marking T 0 (Number) S Y A P M

R: TSOP-R U: TSOP2-400(LF) Z: UBGA

U: 3.0V

Synchronous SRAM
SPB & FT (36Mbit) SRAM
Part Number K7A323630C K7A321830C K7B323635C K7B321835C
Organization 1Mx36 2Mx18 1Mx36 2Mx18
Operating Mode SPB SPB SB SB
Vdd (V) 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5
Access Time tCD(ns) 3.1 3.1 7.5 7.5

Speed tCYC (MHz) 118 118

I/O Voltage (V) 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5
Package 100TQFP Pb-free 100TQFP Pb-free 100TQFP Pb-free 100TQFP Pb-free

Status

Comments 2E1D 2E1D Ind Temp only Ind Temp only
2E1D = 2-cycle Enable and 1-cycle Disable 200MHz could cover 167MHz, 133MHz speed option
SPB & FT (18Mbit) SRAM
Part Number K7A163630B K7A163631B K7A161830B K7A161831B K7B163635B K7B161835B
Organization 512Kx36 512Kx36 1Mx18 1Mx18 512Kx36 1Mx18
Operating Mode SPB SPB SPB SPB SB SB
Vdd (V) 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5
Access Time tCD(ns) 2.6, 3.5 3.1 2.6, 3.5 3.1 7.5 7.5
Speed tCYC (MHz) 250, 250, 117 117
I/O Voltage (V) 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5
Package 100TQFP Pb-free 100TQFP Pb-free 100TQFP Pb-free 100TQFP Pb-free 100TQFP Pb-free 100TQFP Pb-free
Comments 2E1D 2E2D 2E1D 2E2D -
2E1D = 2-cycle Enable and 1-cycle Disable 2E2D = 2-cycle Enable and 2-cycle Disable 250MHz could cover 200MHz speed option / 167MHz could cover 133MHz speed option
SPB & FT (8Mbit) SRAM
Part Number K7A803600B K7A803609B K7A801800B K7A801809B K7B803625B K7B801825B
Organization 256x36 256x36 512x18 512x18 256x36 512x18
Vdd (V) 3.3 3.3 3.3 3.3 3.3 3.3
Access Time tCD(ns) 3.5 2.6 3.5 2.6 6.5 6.5

Speed tCYC (MHz) 133 133

I/O Voltage (V) 3.3,2.5 3.3,2.5 3.3,2.5 3.3,2.5 3.3,2.5 3.3,2.5
Package 100TQFP (LF only) 100TQFP (LF only) 100TQFP (LF only) 100TQFP (LF only) 100TQFP (LF only) 100TQFP (LF only)
Status Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs
Comments 2E1D 2E1D 2E1D 2E1D -
2E1D = 2-cycle Enable and 1-cycle Disable 2E2D = 2-cycle Enable and 2-cycle Disable
Recommended speed options for SPB are 250MHz and 167MHz Recommended access speed option for SB is 6.5ns

SPB & FT (4Mbit) SRAM
Part Number K7A403600B K7A401800B K7A403609B K7A401809B K7A403200B K7B403625B K7B401825B
Organization 128Kx36 256Kx18 128Kx36 256Kx18 128Kx32 128Kx36 256Kx18
Operating Mode SPB SPB SPB SPB SPB SB SB
Vdd (V) 3.3 3.3 3.3 3.3 3.3 3.3 3.3
Access Time tCD(ns) 3.5 3.5 2.4 2.4 3.5 6.5 6.5

Speed tCYC (MHz) 133

I/O Voltage (V) 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5
Package 100TQFP (LF only) 100TQFP (LF only) 100TQFP (LF only) 100TQFP (LF only) 100TQFP (LF only) 100TQFP (LF only) 100TQFP (LF only)
Status Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs
Comments 2E1D 2E1D 2E1D 2E1D 2E1D

NtRAM (72Mbit) SRAM

Part Operating Number Organization Mode Vdd (V) K7N643645M 2Mx36 SPB 2.5 K7N641845M 4Mx18 SPB 2.5
Access Time tCD(ns) 2.6, 3.5 2.6, 3.5
Speed tCYC (MHz) 250, 167 250, 167

I/O Voltage (V) 2.5 2.5

Package 100TQFP, 165FBGA 100TQFP, 165FBGA

All packages are Pb-free

Comments
250MHz could cover 200MHz speed option / 167MHz could cover 133MHz speed option

NtRAM (36Mbit) SRAM

Part Number K7N323635C K7N321835C K7M323631C K7M321831C
Operating Mode SPB SPB FT FT
Access Time tCD(ns) 2.6, 3.5 2.6, 3.5 7.5 7.5
Speed tCYC (MHz) 250, 167 250, 118
Package 100TQFP, 165FBGA 100TQFP, 165FBGA 100TQFP 100TQFP
Recommended speed options for SPB are 250MHz and 167MHz 250MHz could cover 200MHz speed option / 167MHz could cover 133MHz speed option
Recommended access speed option for SB is 7.5ns

NtRAM (18Mbit) SRAM

Part Number K7N161831B K7N163631B K7M161835B K7M163635B
Organization 1Mx18 512Kx36 1Mx18 512Kx36
Operating Mode SPB SPB FT(SB) FT(SB)
Vdd (V) 3.3, 2.5 3.3, 2.5 3.3 3.3
Access Time tCD(ns) 2.6, 3.5 2.6, 3.5 6.5 6.5
Speed tCYC (MHz) 250, 167 250, 133
Package Status "100TQFP, 165FBGA" "100TQFP, 165FBGA" 100TQFP 100TQFP
250MHz could cover 200MHz speed option / 167MHz could cover 133MHz speed option / 6.5ns could cover 7.5ns speed option All packages are Pb-free

NtRAM (8Mbit) SRAM

Part Number K7N803601B K7N801801B K7N803609B K7N801809B K7N803645B K7N801845B K7N803649B K7N801849B K7M801825B K7M803625B
Organization 256Kx36 512Kx18 256Kx36 512Kx18 256Kx36 512Kx18 256Kx36 512Kx18 512Kx18 256Kx36
Operating Mode SPB SPB SPB SPB SPB SPB SPB SPB FT FT
Vdd (V) 3.3 3.3 3.3 3.3 2.5 2.5 2.5 2.5 3.3 3.3
Access Time tCD(ns) 3.5 3.5 2.6 2.6 3.5 3.5 2.6 2.6 6.5 6.5

I/O Voltage (V) 3.3,2.5 3.3,2.5 3.3,2.5 3.3,2.5 2.5 2.5 2.5 2.5 3.3, 2.5 3.3, 2.5
Package 100TQFP 100TQFP 100TQFP 100TQFP 100TQFP 100TQFP 100TQFP 100TQFP 100TQFP 100TQFP
Status Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs

NtRAM (4Mbit) SRAM

Part Number K7N403609B K7N401809B
Organization 128Kx36 256Kx18

Operating Mode SPB SPB

Vdd (V) 3.3 3.3
Access Time tCD(ns) 3.0 3.0

Speed tCYC (MHz) 200 200

I/O Voltage (V) 3.3,2.5 3.3,2.5

Package 100TQFP 100TQFP

Status Not for new designs Not for new designs
LATE-WRITE R-R (32Mbit) SRAM
Part Number K7P321874C K7P323674C Organization 2Mx18 1Mx36 Operating Mode SP SP Access Time Vdd (V) tCD(ns) 1.8 / 2.5V 1.6, 2.0 1.8 / 2.5V 1.6, 2.0 Speed tCYC (MHz) 300,250 300,250 I/O Voltage (V) 1.5 (Max 1.8) 1.5 (Max 1.8) Package 119BGA 119BGA Status C/S C/S
LATE-WRITE R-R (16Mbit) SRAM
Part Number K7P161874C K7P163674C Organization 1Mx18 512Kx36 Operating Mode SP SP Vdd (V) 2.5 2.5 Access Time tCD(ns) 2 1.6 Speed tCYC (MHz) I/O Voltage (V) 1.5 (Max 1.9) 1.5 (Max.1.9) Package 119BGA 119BGA Status C/S C/S
LATE-WRITE R-R (8Mbit) SRAM
Part Number K7P801811B K7P803611B K7P801866B K7P803666B Organization 512Kx18 256Kx36 512Kx18 256Kx36 Operating Mode SP SP SP SP Vdd (V) 3.3 3.3 2.5 2.5 Access Time tCD(ns) 1.6 1.6 2.0 2.0 Speed tCYC (MHz) I/O Voltage (V) 1.5 (Max.2.0) 1.5 (Max.2.0) 1.5 (Max.2.0) 1.5 (Max.2.0) Package 119BGA 119BGA 119BGA 119BGA Status Not for new designs Not for new designs Not for new designs Not for new designs
LATE-WRITE R-R & R-L (4Mbit) SRAM
Part Number K7P401822B K7P401823B K7P403622B Organization 256Kx18 256Kx18 128Kx36 Operating Mode SP SP SP Vdd (V) 3.3 3.3 3.3 Access Time tCD(ns) 2.5,2.7,3.0 6.5 2.5,2.7,3.0 Speed tCYC (MHz) 250,200,250,200,167 I/O Voltage (V) 2.5/3.3 2.5/3.3 2.5/3.3 Package 119BGA 119BGA 119BGA Status Not for new designs Not for new designs Not for new designs

DDR (8Mbit) SRAM

Part Number K7D803671B K7D801871B Organization 256Kx36 512Kx18 Vdd (V) 2.5 2.5 Access Time tCD (ns) 1.7/1.9/2.1 1.7/1.9/2.1 Cycle Time (MHz) 333, 330, 250 333, 330, 250 I/O Voltage (V) 1.5(Max 2.0) 1.5(Max 2.0) Package 153BGA 153BGA Status Not for new designs Not for new designs

SYNCHRONOUS SRAM ORDERING INFORMATION
K 1 1. Memory (K) 2. Sync SRAM: 7 3. Small Classification A: Sync Pipelined Burst B: Sync Burst C: Custom Product D: Double Data Rate I: Double Data Rate II, Common I/O J: Double Data Rate, Separate I/O K: Double Data II+, Common I/O L: Late Select M: Sync Burst + NtRAM N: Sync Pipelined Burst + NtRAM P: Sync Pipe Q: Quad Data Rate I R: Quad Data Rate II S: Quad Data Rate II+ 4~5. Density 10: 1M 20: 2M 40: 4M 64: 72M 6~7. Organization 08: x8 18: x18 36: x36 72: x72 8~9. Vcc, Interface, Mode 00: 3.3V,LVTTL,2E1D WIDE 01: 3.3V,LVTTL,2E2D WIDE 08: 3.3V,LVTTL,2E2D Hi SPEED 09: 3.3V,LVTTL,Hi SPEED 11: 3.3V,HSTL,R-R 12: 3.3V,HSTL,R-L 14: 3.3V,HSTL,R-R Fixed ZQ 22: 3.3V,LVTTL,R-R 23: 3.3V,LVTTL,R-L 25: 3.3V,LVTTL,SB-FT WIDE 30: 1.8/2.5/3.3V,LVTTL,2E1D 31: 1.8/2.5/3.3V,LVTTL,2E2D 35: 1.8/2.5/3.3V,LVTTL,SB-FT 44: 2.5V,LVTTL,2E1D 45: 2.5V,LVTTL,2E2D 49: 2.5V,LVTTL,Hi SPEED 52: 2.5V,1.5/1.8V,HSTL,Burst2 54: 2.5V,1.5/1.8V,HSTL,Burst4 09: x9 32: x32 44: x144 80: 8M 16: 18M 32: 36M 44: 144M 10. Generation M: 1st Generation A: 2nd Generation B: 3rd Generation C: 4th Generation D: 5th Generation Z: TEMPORARY CODE 11. -- 12. Package H: BGA,FCBGA,PBGA G: BGA, FCBGA, FBGA (LF) F: FBGA E: FBGA (LF) Q: (L)QPF P: (L)QFP(LF) C: CHIP BIZ W: WAFER 13. Temp, Power - COMMON (Temp,Power) 0: NONE,NONE (Containing of Error handling code) A: Automotive,Normal B: Commercial,Low Low C: Commercial,Normal E: Extended,Normal I: Industrial,Normal - WAFER, CHIP BIZ Level Division 0: NONE,NONE X 3 X 4 X 5 X 6 X 7 X 8 X 9 X X 12 X 13 X 14 X 15 X 16 X 17 X 18 62: 2.5V/1.8V,HSTL,Burst2 64: 2.5V/1.8V,HSTL,Burst4 66: 2.5V,HSTL,R-R 70: 2.5V,HSTL,4-1-1-1 71: 2.5V,HSTL,3-1-1-1 73: 1.5V,1.8V,HSTL,All 74: 1.8V,2.5V,HSTL,All 80: 1.8V,LVCMOS,2E1D 82: 1.8V,HSTL,Burst2 84: 1.8V,HSTL,Burst4 85: 1.8V,LVCMOS,2E2D,Hi SPEED 88: 1.8V,HSTL,R-R 91: 1.5V,HSTL,All 95: 1.0V,HSTL,All T2: 1.8V,2Clock Latency,Burst2 T4: 1.8V,2Clock Latency,Burst4 U2: 1.8V,2.5Clock Latency,Burst2 U4: 1.8V,2.5Clock Latency,Burst4 14~15. Speed - Sync Burst,Sync Burst + NtRAM & < Mode is R-L >(Clock Accesss Time) 10: 10ns(Sync Burst, Sync Burst + NtRAM) 38: 3.8ns 43: 4.3ns 48: 4.8ns 50: 5ns(Only Sync Pipe) 55: 5.5ns 60: 6ns 65: 6.5ns 67: 6.7ns 70: 7ns 75: 7.5ns 80: 8ns 85: 8.5ns 90: 9ns - Other Small Classification (Clock Cycle Time) 10: 100MHz 11: 117MHz 13: 133MHz 14: 138MHz 15: 150MHz 16: 166MHz 17: 175MHz 18: 183MHz 19: 143MHz 20: 200MHz 21: 200MHz(2.0ns) 22: 225MHz 25: 250MHz 26: 250MHz(1.75ns) 27: 275MHz 30: 300MHz 33: 333MHz 35: 350MHz 36: 366MHz(t-CYCLE) 37: 375MHz 40: 400MHz(t-CYCLE) 42: 425MHz 45: 450MHz 50: 500MHz(except Sync Pipe) 6A: 600MHz 6F: 650Mhz(Only CSRAM) 7F: 750MHz 16. Packing Type (16 digit) - Common to all products, except of Mask ROM - Divided into TAPE & REEL(In Mask ROM, divided into TRAY, AMMO Packing Separately) Type Packing Type New Marking T 0 (Number) S Y A P M

3.0V 3.0V 1.8V 1.8V

1.8V 1.8V 1.8V 1.8V

x16 x16 x16 x16

x32 x32(D) x16(D) x16

TOP TOP TOP T+B

Async. No Page Async. No Page Sync MLC Sync
K5H6358LTM-D7750CD K5Y6313LTM-D790000 KAS35000AM-S44Y000 KAS280003M-DUU5000
10x11x0.8 10.5x12x1.4 11x10x1.3 11.5x13x1.4
145FBGA 151FBGA 133FBGA 167FBGA
1. R= NOR, D= DRAM Memory combination indicates the type, density, and number of die stacks in the MCP. (Ex. RDD32128128 = 32Mb NOR + 128Mb DRAM + 128Mb DRAM). 2. When ordering Tape and Reel, please indicate by the letter "T" on the 3rd to last field in the part number. (Ex. K5H6358ETA-D775T00) 3. All NOR Flash have demuxed Add/Data lines
MCP: MOST COMMONLY USED MCP CONFIGURATIONS
Memory NAND & DRAM NAND Density 256Mb 256Mb 256Mb 512Mb 512Mb 1Gb 1Gb 2Gb 2Gb 64Mb 128Mb 128Mb 256Mb 256Mb 256Mb 512Mb 1Gb 1Gb DRAM Density/Organization 128Mb (x16) 256Mb (x16) 512Mb (x32) 256Mb (x16/x32) 512Mb (x16/x32) 256Mb (x16) 512Mb (x16/x32) 512Mb (x16/x32) 1Gb (x32) 32Mb 32Mb 64Mb 64Mb 128Mb 256Mb (x32) 512Mb (x16/x32) 512Mb (x16/x32) 1Gb (x16/x32) Voltage (NAND-DRAM) 1.8V - 1.8V 2.65V - 1.8/1.8V 3V - 3/2.5V 2.65/1.8V - 1.8V 2.65/1.8V - 1.8V 2.65V - 1.8V 3.0/2.65/1.8V - 3.0/2.65/1.8V 3.0/2.65/1.8V - 3.0/2.65/1.8V 2.65/1.8V - 1.8V 3.0V - 3.0V 3.0/1.8V - 3.0/1.8V 3.0/1.8V - 3.0/1.8V 3.0V - 3.0V 3.0V - 3.0V 3.3V - 3.3/1.8V 1.8V-1.8V 1.8V-1.8V 1.8V-1.8V Package 107FBGA 107FBGA 137FBGA 107FBGA/137FBGA 107FBGA/137FBGA 107FBGA 137/107FBGA 137/107FBGA 137FBGA 69FBGA 56FBGA/64FBGA 64FBGA 84FBGA 84FBGA 188FBGA/167FBGA 167FBGA/202FBGA 167FBGA/202FBGA 202FBGA

NOR & UtRAM

OneNAND & DRAM
This list represents the most commonly used MCPs; more options are available. All NAND organization is x8; all NOR and UtRAM organization is x16 each.

Fusion Memory

FLASH: OneNAND
OneNAND is a monolothic IC that combines a NAND flash array with a NOR flash interface plus an SRAM buffer. Its ideal for high-performance, high-density applications. Density 256Mb 256Mb 256Mb 256Mb 256Mb 512Mb 512Mb 512Mb 512Mb 1Gb 2Gb 4Gb
Org X16 X16 X16 X16 X16 X16 X16 X16 X16 X16 X16 X16

All parts are lead free

Comments ES ES ES

DRAM: OneDRAM

OneDRAM is a dual-port, low power DRAM with an SRAM buffer interface and is optimal for high-performance, high-density mobile applications. Density 512Mb

Org X16

Speed (MHz) 133MHz

Package

Comments Coming Second Half 2007

Hard Disk Drives

3.5" HARD DISK DRIVES
Family T1665 Capacity (GB) 80 RPM 7200 Interface SATA-2 SATA-2 SATA-2 SATA-2 SATA-2 SATA-2 SATA-2 PATA PATA SATA-2 SATA-2 SATA-2 SATA-2 SATA-2 SATA-2 SATA-2 SATA-2 PATA PATA SATA-2 SATA-2 SATA-2 PATA PATA PATA PATA PATA Buffer 2 Model HD500LJ HD501LJ HD320KJ HD321KJ HD400LI HD401LI HD300LI HD400LD HD300LD HD161HJ HD120HJ HD081GJ HD082GJ HD041GJ HD042GJ SP2504C SP2004C SP2514N SP2014N HD160JJ HD120IJ HD080HJ SP1644N SP1654N SP1243N SP1253N SP0842N

T1335 T133 S166S

P120S P120 P80SD P80SD
2.5" HARD DISK DRIVES
Family M5S Capacity (GB) 40 RPM 5400 Interface SATA SATA SATA SATA SATA SATA SATA SATA PATA PATA PATA SATA SATA SATA PATA PATA PATA SATA PATA Buffer 8 Model HM250JI HM160HI HM121HI HM080GI HM061GI HM160JI HM120II HM080HI HM160JC HM120IC HM080HC HM120JI HM100JI HM060HI HM120JC HM100JC HM060HC HM040HI MP0402H
M80S M80 M60S M60 M40S M40S

1.8 HARD DISK DRIVES

Family N1 (3600rpm) Capacity (GB) RPM Interface PATA CEATA PATA CEATA PATA CEATA PATA CEATA PATA CEATA PATA CEATA PATA CEATA PATA CEATA Buffer Model HS061HA HS061HP HS041HA HS041HP HS031GA HS031GP HS021GA HS021GP HS060HB HS060HQ HS040HB HS040HQ HS030GB HS030GQ HS020GB HS020GQ

N1 (4200rpm)

Flash-Enabled Drives

2.5 HYBRID HARD DRIVES

Family MH80S Capacity (GB) 80 RPM 5400 Interface SATA SATA SATA Buffer 8 Model HM16HJI HM12HII HM08HHI

NAND-FLASH BASED SSD

Capacity 4GB 8GB 16GB 32GB 4GB 8GB 16GB 32GB 64GB 8GB 16GB 32GB Form Factor 2.5" 2.5" 2.5" 2.5" 1.8" 1.8" 1.8" 1.8" 1.8" Slim Card Module Slim Card Module Slim Card Module Idle Power 0.1W 0.1W 0.1W 0.1W 0.1W 0.1W 0.1W 0.1W 0.1W 0.1W 0.1W 0.1W Part Number MC4GE04G5APP-0XA MC8DE08G5APP-0XA MC8DE16G5APP-0XA MCAQE32G5APP-0XA MC4GE04G8APR-0X MC8DE08G8APR-0XA MCAQE16G8APR-0XA MCBOE32G8APR-0XA Noise 0dB 0dB 0dB 0dB 0dB 0dB 0dB 0dB 0dB 0dB 0dB 0dB Interface ATA5 ATA5 ATA5 ATA5 ATA5 ATA5 ATA5 ATA5 ATA5 ATA5 ATA5 ATA5
Optical Storage Solutions

EXTERNAL DVD DRIVES

Drive Type Dimensions (WxHxD) Interface Buffer Memory Disc Capacity (Max) Seek Time (Ave) Data Transfer Rate (Max) External DVD Writer SE-S184M External 163x50x232mm USB 2.0 2MB Up to 4.7GB Single Layer / 8.5GB Double Layer DVD-ROM: 130ms CD-ROM: 110ms Media Type MB/s Write MB/s DVD+R 24.3 18x 16.2 DVD+R DL 10.8 8x 10.8 DVD+RW 10.8 8x 10.8 DVD-R 24.3 18x 16.2 DVD-R DL 10.8 8x 10.8 DVD-RAM 21.6 12x 21.6 DVD-RW 8.1 6x 10.8 DVD-ROM 21.6 CD-ROM 7.2 CD-R 7.2 48x 6.0 CD-RW 7.2 32x 6.0
PIO Mode Ultra DMA Mode 2 LightScribe V1.2 Full Labling Time Supported Disks <20min Draft <28min Normal <36min Best DVD+R / DVD+R DL / DVD+RW / DVD-RAM DVD-R / DVD-R DL / DVD-RW / DVD-Video / DVD-ROM CD-R / CD-RW / CD-ROM / CD-ROM/XA CD-Audio / Video-CD / Photo CD CD-I (FMV) / CD-Extra / CD-Text LightScribe DVDR / LightScribe CD-R Other RoHS Compliant Vertical Mount ing Supported 16.6MB/s 33.3MB/s <20min Draft <28min Normal <36min Best DVD+R / DVD+R DL / DVD+RW / DVD-RAM DVD-R / DVD-R DL / DVD-RW / DVD-Video / DVD-ROM CD-R / CD-RW / CD-ROM / CD-ROM/XA CD-Audio / Video-CD / Photo CD CD-I (FMV) / CD-Extra / CD-Text LightScribe DVDR / LightScribe CD-R Both 12cm and 8cm standard round discs supported Operates on either AC Adaptor or USB Power Manual Disc Ejection in case of power loss
Read 12x 8x 8x 12x 8x 12x 8x 16x 48x 40x 40x
Slot-in Slim External DVD Writer SE-T084L External, Slot-in, Slim 143x19x157mm USB 2.0 2MB Up to 4.7GB Single Layer / 8.5GB Double Layer DVD-ROM: 130ms CD-ROM: 130ms Media Type MB/s Write MB/s DVD+R 10.8 8x 10.8 DVD+R DL 8.1 6x 10.8 DVD+RW 10.8 8x 10.8 DVD-R 10.8 8x 10.8 DVD-R DL 5.4 4x 10.8 DVD-RAM 6.75 5x 6.75 DVD-RW 8.1 6x 10.8 DVD-ROM 10.8 CD-ROM 3.6 CD-R 3.6 24x 3.6 CD-RW 3.6 24x 3.6
Read 8x 8x 8x 8x 8x 5x 8x 8x 24x 24x 24x
Burst Transfer Rate (Max)

INTERNAL DVD DRIVES

Drive Type Dimensions (WxHxD) Interface Buffer Memory Disc Capacity (Max) Seek Time (Ave) Data Transfer Rate (Max) Internal DVD-ROM Drives SH-D163A/B SH-D162C Internal Internal 148.2x42x170mm 148.2x42x184mm S-ATA EIDE / ATAPI 198KB 256KB CD-RW Type 80 700MB / CD-R Type 90 800MB Up to 4.7GB Single Layer / 8.5GB Double Layer DVD: 150ms DVD: 150ms CD: 130ms CD: 130ms Media Activity MB/s Read Media Activity MB/s Read Type Type DVD Read 21.6 48x DVD Read 21.6 48x CD Read 7.2 16x CD Read 7.2 16x Internal DVD Writer SH-S182D/M/F Internal 148.2x42x170mm EIDE / ATAPI 2MB Up to 4.7GB Single Layer / 8.5GB Double Layer DVD-ROM: 130ms CD-ROM: 110ms Media MB/sWrite MB/s Read Type DVD+R 24.3 18x 16.2 12x DVD+R DL 10.8 8x 10.8 8x DVD+R DL (SH-S128F) 10.8 10x 10.8 8x DVD+RW 10.8 8x 10.8 8x DVD-R 24.3 18x 16.2 12x DVD-R DL 10.8 8x 10.8 8x DVD-RAM 16.2 12x 16.2 12x DVD-RW 8.1 6x 10.8 8x DVD-ROM 21.6 16x CD-ROM 7.2 48x CD-R 7.2 48x 6.0 40x CD-RW 4.8 32x 6.0 40x

DVD-R / DVD-R DL / DVD-RW / DVD-Video / DVD-ROM DVD-R / DVD-R DL / DVD-RW / DVD-Video / DVD-ROM
LightScribe DVDR / LightScribe CD-R (SM-T082L only) LightScribe DVDR / LightScribe CD-R

INTERNAL COMBO DRIVES

Drive Type Dimensions (WxHxD) Interface Buffer Memory Disc Capacity (Max) Seek Time (Ave) Data Transfer Rate (Max) Internal Combo Slim Drive SN-M242D Internal 128x12.7x129mm EIDE / ATAPI 2MB CD-RW Type 80 700MB / CD-R Type 90 800MB DVD: 120ms CD: 130ms Media Type Activity MB/s Read CD CD CD DVD
Burst Transfer Rate (Max) PIO Mode 4 DMA Mode 2 Ultra DMA Mode 2 Supported Disks
Internal Combo Drives SH-M523A/B SH-M522C Internal Internal 148.2x42x170mm 148.2x42x184mm S-ATA EIDE / ATAPI 2MB 2MB CD-RW Type 80 700MB / CD-R Type 90 800MB Up to 4.7GB Single Layer / 8.5GB Double Layer DVD: 150ms DVD: 150ms CD: 130ms CD: 130ms Media Type Activity MB/s Read Media Type Activity MB/s Read CD CD CD DVD

Record Rewrite Read Read

3.6 3.6 3.6 10.8

24x 24x 24x 8x

1.5Gb/s

7.8 4.8 7.8 21.6

52x 32x 52x 16x

CD CD CD DVD

PIO Mode 4 DMA Mode 2 Ultra DMA Mode 2
16.6MB/s 16.6MB/s 33.3MB/s
DVD+R / DVD+RW / DVD-RAM DVD-R / DVD-RW / DVD-Video / DVD-ROM CD-R / CD-RW / CD-DA / CD-ROM / CD-ROM/XA CD-Audio / Video-CD / Photo CD CD-I / CD-Extra / CD-Text
DVD+R / DVD+RW / DVD-RAM DVD-R / DVD-RW / DVD-Video / DVD-ROM CD-R / CD-RW / CD-DA / CD-ROM / CD-ROM/XA CD-Audio / Video-CD / Photo CD CD-I / CD-Extra / CD-Text RoHS Compliant Horizontal or Vertical Drive Mounting Supported Motorized Tray Buffer Under Run Free Supports Mt. Rainier
RoHS Compliant Horizontal or Vertical Drive Mounting Supported Drawer Type Tray Buffer Under Run Free

INTERNAL CD DRIVES

Drive Type Dimensions (WxHxD) Interface Buffer Memory Disc Capacity (Max) Seek Time (Ave) Data Transfer Rate (Max)
Internal CD-ROM Drives SH-C523A SH-C522C Internal Internal 148.2x42x184mm 148.2x42x184mm S-ATA EIDE / ATAPI 96KB 96KB CD-RW Type 80 700MB / CD-R Type 90 800MB Up to 4.7GB Single Layer / 8.5GB Double Layer CD: 90ms CD: 90ms Media Type Activity MB/s Read Media Type Activity MB/s Read CD Read 7.8 52x CD Read 7.8 52x

S-ATA 1.5Gb/s PIO Mode 4 DMA Mode 2 16.6MB/s 16.6MB/s
CD-ROM Slim Drive SN-C242C Internal 128x12.7x129mm EIDE / ATAPI 96KB CD-RW Type 80 700MB / CD-R Type 90 800MB CD: 130ms Media Type Activity MB/s Read CD Read 3.6 24x
PIO Mode 4 DMA Mode 2 Ultra DMS Mode 2 16.6MB/s 16.6MB/s 33.3MB/s

Supported Disks

CD-R / CD-RW / CD-DA / CD-ROM / CD-ROM/XA Video-CD / Photo CD / CD-I / CD-Extra / CD-Tex
DVD+R / DVD+RW / DVD-RAM / DCD-R DVD-ROM / DVD-Video / Video-CD / Photo CD CD-R / CD-RW / CD-DA / CD-ROM / CD-ROM/XA CD-I / CD-Extra / CD-Text / CD-I / CD-Extra / CD-Text
RoHS Compliant Horizontal or Vertical Drive Mounting Supported Motorized Tray
RoHS Compliant Horizontal or Vertical Drive Mounting Supported Motorized Tray Optional Ultra DMA Burst Transfer
RoHS Compliant Horizontal or Vertical Drive Mounting Supported Drawer Type Tray 80mm and 120mm CD Disc Diameter
Internal CD-RW Drive Drive Type Dimensions (WxHxD) Interface Buffer Memory Disc Capacity (Max) Seek Time (Ave) Data Transfer Rate (Max) SH-R522C Internal 148.2x42x184mm EIDE / ATAPI 2MB CD-RW Type 80 700MB / CD-R Type 90 800MB CD: 100ms Media Type Activity MB/s CD Record 7.8 CD Rewrite 4.8 CD Read 7.8 PIO Mode 4 16.6MB/s DMA Mode 2 16.6MB/s Ultra DMA Mode 2 33.3MB/s CD-R / CD-RW / CD-DA / CD-ROM / CD-ROM/XA Video-CD / Photo CD / CD-I / CD-Extra / CD-Text RoHS Compliant Horizontal or Vertical Drive Mounting Supported Motorized Tray Buffer Under Run Free Supports Mt. Rainier

Read 52x 32x 52x

Burst Transfer Rate

Supported Disks Other

Samsung offers the industrys broadest memory portfolio and has maintained its leadership in memory technology for 14 straight years. Its DRAM, flash and SRAM products are found in computers from ultra-mobile portables to powerful servers and in a wide range of handheld devices such as smartphones and MP3 players. Samsung also delivers the industrys widest line of storage products. These include optical and hard disk drives as well as flash storage, such as the all-flash Solid State Drive and a range of embedded and removable flash storage products.
For more information, visit our website: www.usa.samsungsemi.com
Disclaimer: The information in this publication has been carefully checked and is believed to be accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or omissions, or for any consequences resulting from the use of the information contained herein. Samsung reserves the right to make changes in its products or product specifications with the intent to improve function or design at any time and without notice and is not required to update this documentation to reflect such changes. This publication does not convey to a purchaser of semiconductor devices described herein any license under the patent rights of Samsung or others. Samsung makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Samsung assume any liability arising out of the application or use of any product or circuit and specifically disclaims any and all liability, including without limitation any consequential or incidental damages.