P120CE Series

CAPACITY1 MODEL

FEATURES

100GB/125GB Formatted Capacity Per Disk Ultra ATA-133 Interface Support Fluid Dynamic Bearing Spindle Motor Technology High Speed Dual Digital Signal Processor (DSP) Based Architecture AV Streaming Feature Set ATA Automatic Acoustic Management Feature Set ATA S.M.A.R.T. Compliant ATA Security Mode Feature Set ATA Host Protected Area Feature Set ATA 48-bit Address Feature Set ATA Streaming Feature Set ATA Device Configuration Overlay Feature Set NoiseGuard SilentSeek

SP2014N/CE

SP2514N/CE ENVIRONMENTAL SPECIFICATIONS
Temperature Operating 0 ~ 60 C Non-operating -40 ~ 70 C Thermal Gradient (max.) 20C/hr Humidity (non-condensing) Operating 5 ~ 90 % Non-operating 5 ~ 95 % Linear Shock (1/2 sine pulse) Operating, 2ms 63 G Non-operating, 2ms 350 G Vibration (swept sine, 0.25 octave per minute) Operating 5 ~ 21 Hz 0.034 (double amplitude) 21 ~ 300 Hz 1.5 Go-p Non-operating 5 ~ 21 Hz 0.195 (double amplitude) 21 ~ 500 Hz 8 Go-p Altitude (relative to sea level) Operating -1,000 to 10,000 feet Non-operating -1,000 to 40,000 feet

DRIVE CONFIGURATION

Interface Buffer DRAM Size Bytes per Sector UDMAMB 512
POWER REQUIREMENTS PERFORMANCE SPECIFICATIONS
Read Seek Time (typ.) Track to Track Average Full Stroke Average Latency 3 Rotational Speed Data Transfer Rate Media to/from Buffer (max.) Buffer to/from Host (max.) Drive Ready Time (typ.) 0.8 ms 8.9 ms 18 ms 4.17 ms 7,200 RPM 973 Mbits/sec 133 Mbytes/sec 7 sec Voltage Spin Up Current (max.) 5 Seek (typ.) Read/Write On-Track (typ.) Normal(typ.) Idle (typ.) Standby (typ.) Sleep (typ.) +5V5%, +12V10% 650 / 1900 mA 9.0 W 7.5 W 7.0 W 7.0 W 0.5 W 0.4 W

PHYSICAL DIMENSION

Height Width Depth Weight 1 in 4 in 5.75 in 1.44 lb
RELIABILITY SPECIFICATIONS
Non-recoverable Read Error MTBF Start/Stop Cycles (Ambient) Component Design Life 1 sector in 10 bits 600,000 POH 50,years
Specifications are subject to change without notice.
ACOUSTICS (AVERAGE SOUND POWER)

Idle Random Read/Write

2.6 Bel 2.9 Bel
1MB=1,000,000 Bytes 1GB=1,000,000,000 Bytes. Backward compatible with UDMA 33/66/100. Factory default UDMA100 unless customer request. 7,200 RPM class. Actual speed can be different a little. Averaged value with a high performance cover. Random seek with 30% duty cycle.
P120P Product Data Sheet Rev1.2 (04-23-06) Product Manul Rev03 (11-02-05)

Composition (64M x8)*9 (128M x8)*9 (128M x8)*9 (128M x8)*18 (128M x8)*18 (256M x8)*18
Compliance Lead free Lead free Lead free & Halogen free Lead free Lead free & Halogen free Lead free
Speed (Mbps) 667/800 667/800 667/800 667/800 667/800 667/800
Production Now Now Jan '09 Now Jan '09 Now
DDR2 SDRAM SODIMM MODULES
Module Density 512MB Organization 64Mx64 Part Number M470T6554GZ3-C(E6/F7/E7) M470T6464QZ3-C(E6/F7/E7) M470T2953GZ3-C(E6/F7/E7) 1GB 128Mx64 M470T2864QZ3-C(E6/F7/E7) M470T2864EH3-C(E6/F7/E7) 2GB 4GB
Composition (32M x16)*8 (64M x16)*4 (64M x8)*16 (64M x16)*8 (64M x16)*8 (128M x8)*8 (128M x8)*8 st.(512M x8)*8
M470T5663QZ3-C(E6/F7/E7) M470T5663EH3-C(E6/F7/E7) M470T5267AZ3-C(E6/F7)

Module

DDR2 SDRAM COMPONENTS
Density 256Mb 512Mb Organization 16Mx16 128M x4 64M x8 32M x16 256M x4 1Gb 128M x8 64M x16 2Gb
Part Number K4T56163QI-ZC(E6/F7/E7) K4T51043QG-HC(E6/F7/E7) K4T51083QG-HC(E6/F7/E7) K4T51163QG-HC(E6/F7/E7/F8) K4T1G044QQ-HC(E6/F7/E7) K4T1G044QE-HC(E6/F7/E7) K4T1G084QQ-HC(E6/F7/E7) K4T1G084QE-HC(E6/F7/E7) K4T1G164QQ-HC(E6/F7/E7) K4T1G164QE-HC(E6/F7/E7/F8) K4T2G044QA-HC(E6/F7/E7) K4T2G084QA-HC(E6/F7/E7)
# Pins-Package 84-FBGA 60-FBGA 60-FBGA 84-FBGA 68-FBGA 68-FBGA 68-FBGA 68-FBGA 84-FBGA 84-FBGA 68-FBGA 68-FBGA
Dimensions 9x13mm 10x11mm 10x11mm 11x13mm 11x18mm 11x18mm 11x18mm 11x18mm 11x18mm 11x18mm 11x18mm 11x18mm

Voltage = 1.8V

Package Lead free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free Lead free & Halogen free
Speed (Mbps) 667/800 667/800 667/800 667/800/1066 667/800 667/800 667/800 667/800 667/800 667/800/1066 667/800 667/800
Production Now Now Now Now Now Jan'09 Now Now Now Jan'09 Now Now

512Mx4 256Mx8

E6=DDR2-667 (5-5-5) F7=DDR2-800 (6-6-6)
E7=DDR2-800 (5-5-5) F8=DDR2-1066 (7-7-7)
DDR SDRAM 1U REGISTERED MODULES
Module Density 512Mb 1Gb 2Gb
Organization 64Mx72 128Mx72 256Mx72
Part Number M312L6523FH3-CCC/B0 M312L2920FLS-CB0 M312L2923FH3-CCC/B0 M312L2920FH3-CB3 M312L5720FH3-CB3
Composition (64M x8)*9 (128M x4)*18 (128M x8)*9 (128M x4)*18 (128M x4)*36
Compliance Lead-free Lead-free Lead-free Lead-free Lead-free

Type: 184-pin

Speed (Mbps) 333/400 333/400 333/400 333/400 333/400
B0 = DDR266 (133MHz @ CL=2.5) A2 = DDR266 (133MHz @ Cl=2)
B3 = DDR333 (166MHz @ CL=2.5) CC = DDR400 (200MHz @ CL=3)
DDR SDRAM UNBUFFERED MODULES

Module Density 512Mb 1Gb

Organization 64MX64 128Mx64
Part Number M368L6523FLS-CCC/B3 M368L2923FLN-CCC/B3

Composition (64M x8)*8 (64M x8)*16
Compliance Lead-free & Halogen free Lead-free & Halogen free
Speed (Mbps) 333/400 333/400
Package: 66TSOP lead-free and halogen-free Voltage: 2.5V

DDR SDRAM SODIMM MODULES

Part Number M470L6524FL0-CB300 M470L2923F60-CB300
Composition (32M x16)*8 (64M x8)*16
Compliance Lead-free Lead-free

Speed (Mbps) 333 333

B0 = DDR266 (133MHz @ CL=2.5) CC = DDR400 (200MHz @ CL=3)
B3 = DDR333 (166MHz @ CL=2.5) A2 = DDR266 (133MHz @ Cl=2)

DDR2 & DDR SDRAM

DDR SDRAM COMPONENTS
64Mx4 256Mb 32Mx8 16Mx16 128Mx4 512Mb 64Mx8 32Mx16 128Mb
K4H560438J-LCB3/B0 K4H560838J-LCCC/B3 K4H561638J-LCCC/B3 K4H510438F-LCB3/B0 K4H510438F-HCCC/B3 K4H510838F-LCCC/B3 K4H510838F-HCCC/B3 K4H511638F-LCCC/B3 K4H281638L-LCCC/CD
66-TSOP 66-TSOP 66-TSOP 66-TSOP 60-FBGA 66-TSOP 60-FBGA 66-TSOP 66-TSOP
266/333 333/400 333/400 266/333 333/400 333/400 333/400 333/400 400/500
Halogen -free Halogen -free Halogen -free Halogen -free Halogen -free Halogen -free Halogen -free Halogen -free Halogen -free

SDRAM COMPONENTS

Density 64Mb 128Mb Organization 8Mx8 4Mx16 16Mx8 8Mx16 64Mx4 256Mb 32Mx8 16Mx16 128Mx4 512Mb
Part Number K4S640832N-UC(75)000 K4S641632N-UC(L)(75/60)000 K4S280832K-UC(L)(75)000 K4S281632K-UC(L)(75/60)000 K4S560432J-UC(L)(75)000 K4S560832J-UC(L)(75)000 K4S561632J-UC(L)(75/60)000 K4S510432D-UC(L)(75)000 K4S510832D-UC(L)(75)000 K4S511632D-UC(L)(75)000
# Pins - Package 54-TSOP 54-TSOP 54-TSOP 54-TSOP 54-TSOP 54-TSOP 54-TSOP 54-TSOP 54-TSOP 54-TSOP
Speed (Mbps) 133 133/143/133/133 133/133 133
Refresh 4K 4K 4K 4K 8K 8K 8K 8K 8K 8K
Remarks K-die changing to N-die K-die changing to N-die I-die changing to K-die I-die changing to K-die H-die changing to J-die H-die changing to J-die H-die changing to J-die

64Mx8 32Mx16

L = Commercial Temp., Low Power For industrial temperature, check with SSI Marketing Banks: 4
All products are lead free Voltage: 3.3V Speed: PC133 (133MHz CL=3/PC100 CL2)

RDRAM COMPONENTS

Density 288M

Organization x18

Voltage: 2.5 V All products are lead free

Note: All of Lead-free or Halogen-free product are in compliance with RoHS
10. Temp & Power - COMMON (Temp, Power)
C: Commercial, Normal (0C 95C) & Normal Power C: (Mobile Only) Commercial (-25 ~ 70C), Normal Power J: Commercial, Medium L: Commercial, Low (0C 95C) & Low Power L: (Mobile Only) Commercial, Low, i-TCSR F: Commercial, Low, i-TCSR & PASR & DS E: Extended (-25~85C), Normal N: Extended, Low, i-TCSR G: Extended, Low, i-TCSR & PASR & DS I: Industrial, Normal (-40C 85C) & Normal Power P: Industrial, Low (-40C 85C) & Low Power H: Industrial, Low, i-TCSR & PASR & DS
11. Speed (Wafer/Chip Biz/BGD: 00)
DDR SDRAM CC: DDR400 (200MHz @ CL=3, tRCD=3, tRP=3) B3: DDR333 (166MHz @ CL=2.5, tRCD=3, tRP=3) *1 A2: DDR266 (133MHz @ CL=2 , tRCD=3, tRP=3) B0: DDR266 (133MHz @ CL=2.5, tRCD=3, tRP=3)
Note 1: "B3" has compatibility with "A2" and "B0"
DRAM Ordering Information
Module DRAM Ordering Information
SAMSUNG Memory DIMM Data bits DRAM Component Type Depth Number of Banks Bit Organization
AMB Vendor Speed Temp & Power PCB Revision Package Component Revision
1. Memory Module: M 2. DIMM Type

3: DIMM 4: SODIMM

5. Depth
09: 8M (for 128Mb/512Mb) 17: 16M (for 128Mb/512Mb) 16: 16M 28: 128M 29: 128M (for 128Mb/512Mb) 32: 32M 33: 32M (for 128Mb/512Mb) 51: 512M 52: 512M (for 512Mb/2Gb) 56: 256M 57: 256M (for 512Mb/2Gb) 59: 256M (for 128Mb/512Mb) 64: 64M 65: 64M (for 128Mb/512Mb) 1G: 1G 1K: 1G (for 2Gb)

9. Package

E: FBGA QDP (Lead-free & Halogen-free) G: FBGA H: FBGA (Lead-free & Halogen-free) J: FBGA DDP (Lead-free) M: FBGA DDP (Lead-free & Halogen-free) N: sTSOP Q: FBGA QDP (Lead-free) T: TSOP II (400mil) U: TSOP II (Lead-Free) V: sTSOP II (Lead-Free) Z: FBGA(Lead-free)

3. Data bits

12: x72 184pin Low Profile Registered DIMM 63: x63 PC100 / PC133 SODIMM with SPD for 144pin 64: x64 PC100 / PC133 SODIMM with SPD for 144pin (Intel/JEDEC) 66: x64 Unbuffered DIMM with SPD for 144pin/168pin (Intel/JEDEC) 68: x64 184pin Unbuffered DIMM 70: x64 200pin Unbuffered SODIMM 71: x64 204pin Unbuffered SODIMM 74: x72 /ECC Unbuffered DIMM with SPD for 168pin (Intel/JEDEC) 77: x72 /ECC PLL + Register DIMM with SPD for 168pin (Intel PC100) 78: x64 240pin Unbuffered DIMM 81: x72 184pin ECC unbuffered DIMM 83: x72 184pin Registered DIMM 90: x72 /ECC PLL + Register DIMM 91: x72 240pin ECC unbuffered DIMM 92: x72 240pin VLP Registered DIMM 93: x72 240pin Registered DIMM 95: x72 240pin Fully Buffered DIMM with SPD for 168pin (JEDEC PC133)

Please contact your local Samsung sales representative for latest product offerings.
Note: All parts are lead free
Solid State Drives (ssd)*
Application Interface Size 1.8" SATA II SLC 3.0Gb/sec Connector Thin uSATA Den. 32GB 64GB 32GB 64GB 32GB 64GB 64GB 128GB 64GB 128GB 64GB 128GB 64GB 2.5" PM800 SLIM (caseless) SS410 Server/Storage SATA II 3.0Gb/sec SLC SS415 SS800 2.5" 2.5" 2.5" uSATA Thin SATA Thin SATA Thin SATA Thin SATA 128GB 256GB 64GB 128GB 25GB 50GB 50GB 64GB 50GB 100GB 8GB UMPC/Low-Cost PC SATA II MLC UM410 HALF SLIM Thin SATA 16GB 32GB
*Please contact Marketing for the latest offerings.

Comp. 8Gb

Part Number MCBQE32G8MPP-0VA00 MCCOE64G8MPP-0VA00 MCBQE32G5MPP-0VA00 MCCOE64G5MPP-0VA00 MCBQE32GFMPP-MVA00 MCBQE64GFMPP-MVA00 MMCRE64G8MPP-0VA00 MMCQE28G8MUP-0VA00 MMCRE64G5MPP-0VA00 MMDOE28G5MPP-0VA00
2.5" SLIM (caseless) 1.8"

Thin SATA

Thin uSATA

16Gb 16Gb

PC/Notebook
PM410 SATA II MLC 3.0Gb/sec
2.5" SLIM (caseless)
MMCRE64GFMPP-MVA00 MMCQE28GFMPP-MVA00 MMCRE64G5MXP-0VB00
MMCRE28G5MXP-0VB00 MMDOE56G5MXP-0VB00

16Gb 8Gb 8Gb 8Gb

MMCRE64GFMXP-MVB00 MMCRE28GFMXP-MVB00 MCBQE25G5MPQ-0VA03 MCCOE50G5MPQ-0VA03 MCBQE32G5MPQ-0VA03 MCCOE64G5MPQ-0VA03 MCBQE50G5MXP-0VB03 MCCOE00G5MXP-0VB03 MMAGE08GSMPP-MVA00 MMBRE16GSMPP-MVA00 MMCRE32GSMPP-MVA00
SD and MicroSD Flash Cards
Flash Cards Type Density 1GB SD 2GB 4GB 8GB 512MB 4Gb MLC A-die 16G MLC M-die Component Family 8Gb MLC B-die Ver. Controller SKYMEDI SKYMEDI SKYMEDI SKYMEDI SMI SMI SMI 1GB MicroSD (without adapter) 8Gb MLC 8Gb MLC 16G MLC 4GB 8GB 8Gb MLC 16G MLC 16G MLC B-die B-die M-die B-die M-die M-die SKYMEDI SKYMEDI SKYMEDI SKYMEDI SKYMEDI SKYMEDI SKYMEDI SKYMEDI Manuf. Site STS STS STS STS STS ATP SPIL SPIL STS SPIL STS STS SPIL STS STS Part Number MM8GF01GWBCA-2MA00 MMAGF02GWMCA-2NA00 MMAGF04GWMCA-2NA00 MMAGF08GWMCA-2NA00 MM4GR512UACA-2PA00 MM4GR512UACU-2PA00 MM4GR512UACY-2PA00 MM8GR01GUBCY-2MA00 MM8GR01GUBCA-2MA00 MM8GR02GUBCY-2MA00 MM8GR02GUBCA-2MA00 MMAGR02GUDCA-2MA00 MM8GR04GUBCY-2MA00 MMAGR04GUDCA-2MA00 MMAGR08GUDCA-2MA135 MOQ

2E1D Ind Temp only 2E1D Ind Temp only 2E1D 2E2D

512Kx36 18Mb 1Mx18

K7A161831B K7B161835B K7A803609B

256x36 8Mb 512x18

K7A803600B K7B803625B K7A801809B K7A801800B K7B801825B K7A403609B K7A403600B K7B403625B K7A403200B K7A401809B

128Kx32 4Mb 256Kx18

K7A401800B K7B401825B
All TQFP products are Lead Free 2E1D = 2-cycle Enable and 1-cycle Disable 2E2D = 2-cycle Enable and 2-cycle Disable SPB speed recommendations: For 200MHz use 250MHz; For 133MHz use 167MHz SB speed recommendation: Use 7.5ns Access Time use 6.5ns Access Time

Synchronous SRAM

Density Organization Part Number # PinsPackage 100-TQFP, 165FBGA 100-TQFP, 165FBGA 100-TQFP, 165FBGA 100-TQFP, 165FBGA 100-TQFP 100-TQFP 100-TQFP, 165FBGA 100-TQFP, 165FBGA 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP 100-TQFP Operating Mode SPB SPB SPB SPB FT FT SPB SPB FT (SB) FT (SB) SPB SPB SPB SPB SPB SPB SPB SPB FT FT SPB SPB Vdd (V) Access Time tCD (ns) 2.6, 3.5 2.6, 3.5 2.6, 3.5 2.6, 3.5 7.5 7.5 2.6, 3.5 2.6, 3.5 6.5 6.5 3.5 3.5 2.6 2.6 3.5 3.5 2.6 2.6 6.5 6.5 3.0 3.0 Speed tCYC (MHz) 250, 167 250, 167 250, 167 250, 118 250, 167 250, 200 I/O Voltage (V) 2.5 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3,2.5 3.3,2.5 3.3,2.5 3.3,2.5 2.5 2.5 2.5 2.5 3.3, 2.5 3.3, 2.5 3.3,2.5 3.3,2.5 Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs
2Mx36 4Mx18 1Mx36 2Mx18 1Mx36 2Mx18 1Mx18 512Kx36 1Mx18 512Kx36 256Kx36 512Kx18 256Kx36 512Kx18 256Kx36 512Kx18 256Kx36 512Kx18 512Kx18 256Kx36 128Kx36 256Kx18
K7N643645M K7N641845M K7N323635C K7N321835C K7M323631C K7M321831C K7N161831B K7N163631B K7M161835B K7M163635B K7N803601B K7N801801B K7N803609B K7N801809B K7N803645B K7N801845B K7N803649B K7N801849B K7M801825B K7M803625B K7N403609B K7N401809B

2.5 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3, 2.5 3.3 3.3 3.3 3.3 3.3 3.3 2.5 2.5 2.5 2.5 3.3 3.3 3.3 3.3
All TQFP products are Lead Free NtRAM speed recommendations: For 200MHz use 250MHz; For 133MHz use 167MHz NtRAM speed recommendation: Use 7.5ns Access Time use 6.5ns Access Time Recommended SPB speeds are 250MHz and 167MHz Recommended SB Acess Speed is 7.5ns

LATE-WRITE RR AND R-L

Type Density Organization Part Number # PinsPackage 119-BGA 119-BGA 119-BGA 119-BGA 119-BGA 119-BGA 119-BGA 119-BGA 119-BGA Operating Mode SP SP SP SP SP SP SP SP SP Vdd (V) Access Time tCD (ns) 1.6, 2.0 1.6, 2.0 1.6 1.6 2.0 2.0 2.5,2.7,3.0 2.5,2.7,3.0 6.5 Speed tCYC (MHz) 300,250 300,250 250,200,167 250,200,I/O Voltage (V) 1.5 (Max 1.8) 1.5 (Max 1.8) 1.5 (Max.2.0) 1.5 (Max.2.0) 1.5 (Max.2.0) 1.5 (Max.2.0) 2.5/3.3 2.5/3.3 2.5/3.3 Production Status C/S C/S Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs Not for new designs

32Mb LateWrite R-R

1Mx36 2Mx18 256Kx36 512Kx18 256Kx36 512Kx18 128Kx36
K7P323674C K7P321874C K7P803611B K7P801811B K7P803666B K7P801866B K7P403622B K7P401822B K7P401823B
1.8 / 2.5V 1.8 / 2.5V 3.3 3.3 2.5 2.5 3.3 3.3 3.3

LateWrite R-R and R-L

256Kx18 256Kx18

DDR SYNCHRONOUS SRAM

Type Density Organization 512K x36 1M x18 256K x36 512K x18 4M x18 72Mb 2M x36 Part Number K7D163674B K7D161874B K7D803671B K7D801871B K7I641882M K7I641884M K7J641882M K7I643682M K7I643684M K7J643682M K7I321882C 2M x18 DDR II CIO/ SIO 36Mb 1M x36 K7I321884C K7J321882C K7I323682C K7I323684C K7J323682C K7I161882B 1M x18 18Mb 512K x36 2M x18 1M x36 1M x18 512K x36 K7I161884B K7J161882B K7J163682B K7I163682B K7I163684B 36Mb DDR II+ CIO 18Mb
# PinsPackage 153-BGA 153-BGA 153-BGA 153-BGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA
Vdd (V) 1.8~2.5 1.8~2.5 2.5 2.5 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8
Access Time tCD (ns) 2.3 2.3 1.7/1.9/2.1 1.7/1.9/2.1 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45 0.45 0.45 0.45 0.45 0.45 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45 0.45 0.45 0.45

Cycle Time (MHz) 330, 300 330, 300 333, 330, 250 333, 330, 250 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 333,300,250 333,300,250 333,300,250 333,300,250 333,300,250 333,300,250 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 450, 400, 333 450, 400, 333 450, 400, 333 450, 400, 333
I/O Voltage (V) 1.5~1.9 1.5~1.9 1.5(Max 2.0) 1.5(Max 2.0) 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5 1.5 1.5 1.5
Production Status Mass Production Mass Production Not for new designs Not for new designs Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production

Comments

16Mb DDR 8Mb
CIO-2B CIO-4B SIO-2B CIO-2B CIO-4B SIO-2B CIO-2B CIO-4B SIO-2B CIO-2B CIO-4B SIO-2B CIO-4B SIO-2B SIO-2B CIO-2B CIO-4B DDRII + CIO-2B DDRII + CIO-2B DDRII + CIO-2B DDRII + CIO-2B CIO-2B
K7K3218T2C K7K3236T2C K7K1618T2C K7K1636T2C
2B = Burst of 2 4B = Burst of 4 SIO = Separate I/O CIO = Common I/O For DDR II CIO/SIO: C-die use 330, 300, or 250MHz instad of 200MHz or 167MHz using a stable DLL circuit For DDR II+ CIO: 2-clock latency is available. A 2.5-clock latency can be supported on 18Mb at 500Mhz and 36Mb at 450MHz

DDR I / II / II+

QDR SYNCHRONOUS SRAM
Type Density Organization 8M x9 72Mb 4M x18 2M x36 QDR II 4M x9 36Mb 2M x18 1M x36 2M x9 Part Number K7R640982M K7R641882M K7R641884M K7R643682M K7R643684M K7R320982C K7R321882C K7R321884C K7R323682C K7R323684C K7R160982B K7R161882B 1M x18 QDR I, QDR II 18Mb K7R161884B K7Q161862B K7Q161864B K7R163682B 512K x36 K7R163684B K7Q163662B K7Q163664B 36Mb QDR II+ 18Mb
# PinsPackage 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA 165-FBGA
Vdd (V) 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8
Access Time tCD (ns) 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45 0.45 0.45 0.45 0.45 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.45,0.50
Cycle Time (MHz) 250,200,167 250,200,167 300,250,200,167 250,200,167 300,250,200,167 300, 250, 200 300, 250, 200 333, 300, 250 300, 250, 200 333, 300, 250 250,200,167 250,200,167 300,250,200,167 250,200,167 300,250,200,167 450, 400, 333 450, 400, 333 450, 400, 333 450, 400, 333

I/O Voltage (V) 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5 1.5 1.5 1.5
Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production
Comments QDR II-2B QDR II-2B QDR II-4B QDR II-2B QDR II-4B QDR II-2B QDR II-2B QDR II-4B QDR II-2B QDR II-4B QDR II - 2B QDR II - 2B QDR II - 4B QDR I - 2B QDR I - 4B QDR II - 2B QDR II - 4B QDR I - 2B QDR I - 4B QDR II + 4B QDR II + 4B QDR II + 4B QDR II + 4B
1.8v / 2.5v 2.5 1.8v / 2.5v 2.5 1.8 1.8 0.45,0.45,0.50 0.45,0.45,0.45,0.50
1.8v / 2.5v 2.5 1.8v / 2.5v 2.5 1.8 1.8 1.8 1.8 0.45 0.45 0.45 0.45
1M x36 2M x18 1M x18 512K x36
K7S3218T4C K7S3236T4C K7S1618T4C K7S1636T4C
For QDR I, QDR II: 2B = Burst of 2, 4B = Burst of 4 For QDR II (36Mb): C-die use 300, 250MHz or 200MHz instead of 167MHz using a stable DLL circuit For QDR II (72Mb): 2B = Burst of 2 and 250MHz or 200MHz is recommended, 4B = Burst of 4 and 300MHz or 250MHz is recommended For QDR II+: 2-clock latency supported. 2.5-clock latency can be supported with 450MHz speed

QDR I / II / II+

Synchronous SRAM Ordering Information
SAMSUNG Memory Sync SRAM Small Classification Density Density Organization Organization Vcc, Interface, Mode
Packaging Type Speed Speed Temp, Power Package --Generation Vcc, Interface, Mode
1. Memory (K) 2. Sync SRAM: 7 3. Small Classification
A: Sync Pipelined Burst B: Sync Burst D: Double Data Rate I: Double Data Rate II, Common I/O J: Double Data Rate, Separate I/O K: Double Data II+, Common I/O M: Sync Burst + NtRAM N: Sync Pipelined Burst + NtRAM P: Sync Pipe Q: Quad Data Rate I R: Quad Data Rate II S: Quad Data Rate II+
49: 2.5V,LVTTL,Hi SPEED 52: 2.5V,1.5/1.8V,HSTL,Burst2 54: 2.5V,1.5/1.8V,HSTL,Burst4 62: 2.5V/1.8V,HSTL,Burst2 64: 2.5V/1.8V,HSTL,Burst4 66: 2.5V,HSTL,R-R 74: 1.8V,2.5V,HSTL,All 82: 1.8V,HSTL,Burst2 84: 1.8V,HSTL,Burst4 88: 1.8V,HSTL,R-R T2: 1.8V,2Clock Latency,Burst2 T4: 1.8V,2Clock Latency,Burst4 U2: 1.8V,2.5Clock Latency,Burst2 U4: 1.8V,2.5Clock Latency,Burst4
WAFER, CHIP BIZ Level Division 0: NONE,NONE 1: Hot DC sort 2: Hot DC, selected AC sort

14~15. Speed

Sync Burst,Sync Burst + NtRAM < Mode is R-L > (Clock Accesss Time) 65: 6.5ns 70: 7ns 75: 7.5ns 80: 8ns 85: 8.5ns Other Small Classification (Clock Cycle Time) 10: 100MHz 11: 117MHz 13: 133MHz 14: 138MHz 16: 166MHz 20: 200MHz 25: 250MHz 26: 250MHz(1.75ns) 27: 275MHz 30: 300MHz 33: 333MHz 35: 350MHz 37: 375MHz 40: 400MHz(t-CYCLE) 42: 425MHz 45: 450MHz 50: 500MHz (except Sync Pipe)

M: 1st Generation A: 2nd Generation B: 3rd Generation C: 4th Generation D: 5th Generation
80: 8M 40: 4M 64: 72M 16: 18M 32: 36M

11. --

09: x9 32: x32

08: x8 18: x18 36: x36

12. Package
H: BGA,FCBGA,PBGA G: BGA, FCBGA, FBGA (LF) F: FBGA E: FBGA (LF) Q: (L)QPF P: (L)QFP(LF) C: CHIP BIZ W: WAFER
16. Packing Type (16 digit)
- Common to all products, except of Mask ROM - Divided into TAPE & REEL (In Mask ROM, divided into TRAY, AMMO packing separately) Type Component Component (Mask ROM) Module Packing Type New Marking TAPE & REEL T Other (Tray, Tube, Jar) 0 (Number) Stack S TRAY Y AMMO PACKING A MODULE TAPE & REEL P MODULE Other Packing M
8~9. Vcc, Interface, Mode
00: 3.3V,LVTTL,2E1D WIDE 01: 3.3V,LVTTL,2E2D WIDE 08: 3.3V,LVTTL,2E2D Hi SPEED 09: 3.3V,LVTTL,Hi SPEED 11: 3.3V,HSTL,R-R 12: 3.3V,HSTL,R-L 14: 3.3V,HSTL,R-R Fixed ZQ 22: 3.3V,LVTTL,R-R 23: 3.3V,LVTTL,R-L 25: 3.3V,LVTTL,SB-FT WIDE 30: 1.8/2.5/3.3V,LVTTL,2E1D 31: 1.8/2.5/3.3V,LVTTL,2E2D 35: 1.8/2.5/3.3V,LVTTL,SB-FT 44: 2.5V,LVTTL,2E1D 45: 2.5V,LVTTL,2E2D

13. Temp, Power

COMMON (Temp,Power) 0: NONE,NONE (Containing of error handling code) C: Commercial,Normal E: Extended,Normal I: Industrial,Normal

MCP: NAND/DRAM

NAND Density 512Mb DRAM Density/Organization 256Mb (x16,x32) 512Mb (x16,x32) 256Mb (x16,x32) 1Gb 512Mb (x16,x32) 1Gb (x32) 2Gb 4Gb 512Mb (x16,x32) 1Gb (x16,x32) 1Gb (x32) Voltage (NAND-DRAM) 2.7V/1.8V - 1.8V 2.7V/1.8V - 1.8V *3.0V/1.8V - 1.8V *2.7V/1.8V - 1.8V 1.8V - 1.8V 1.8V - 1.8V 1.8V - 1.8V 2.7V - 1.8V MCP Package 107/137FBGA 107/137FBGA 107/137FBGA 107/137FBGA 137FBGA 107/137FBGA 107/137FBGA 137FBGA 119/152FBGA 152/160/168FBGA 137FBGA PoP Package 120FBGA 120/136FBGA 152FBGA 119/152FBGA

MCP: OneNAND/DRAM

OneNAND Density 512Mb DRAM Density/Organization 256Mb (x32) 512Mb (x16,x32) 768Mb (x32) 1Gb 512Mb (x16,x32) 1Gb (x32) 512Mb (x16,x32) 2Gb 4Gb 1Gb (x16,x32) 2Gb (x32) 1Gb (x16) Voltage (NAND-DRAM) 3.3V/1.8V - 1.8V 1.8V - 1.8V 1.8V - 1.8V 1.8V - 1.8V 1.8V - 1.8V 1.8V - 1.8V 1.8V - 1.8V 1.8V - 1.8V 1.8V - 1.8V 202FBGA MCP Package 188FBGA 167/202FBGA 167/202FBGA 167/202FBGA PoP Package 152FBGA 152FBGA 152FBGA 168FBGA 168FBGA 152/160/168FBGA 152/160/168FBGA 152/168FBGA -

MCP: FlexOneNAND/DRAM

MOQ (Tray) 1,120 1,120 1,120 1,120 1,120 1,120 1,120 1,120 1,120 1,120 1,120

Remarks

KFG1216Q2B-SEB8000 KFG1216U2B-SIB6000 KFM1216Q2B-DEB8000 KFG1G16U2C-AIB6000
KFG1G16Q2C-AEB8000 KFM1G16Q2C-DEB8000 KFG2G16Q2A-DEB8000 KFM2G16Q2A-DEB8000 KFH4G16Q2A-DEB8000

Muxed Muxed

2Gb 4Gb DDP
*T&R MOQ 2Kpcs **Please contact your local Samsung sales representative for latest product offerings & information on support & availability. NOTE: All parts are lead free

Flex-OneNAND

A monolithic IC with a NAND flash array using a NOR flash interface, Flex-OneNAND enables partitioning into SLC and MLC areas so the chip can be configured for storage or high-speed access.

Density 4Gb Flex-OneNAND

Part Number KFG4GH6Q4M-DEB8000 KFG4GH6U4M-DIB6000 KFM4GH6Q4M-DEB8000
Package 63 FBGA (10x13) 63 FBGA (10x13) 63 FBGA (10x13) 63 FBGA (10x13)

Org. X16 X16 X16 X16

Voltage (V) 1.8v 3.3V 1.8v 3.3V
Temp. extended Industrial extended Industrial
Speed 83Mhz 66Mhz 83Mhz 66Mhz
MOQ (Tray) 1,120 1,120 1,120 1,120
Remarks FSR software required FSR software required Muxed. FSR SW req. FSR software required
8Gb DDP Flex-OneNAND KFH8GH6U4M-DIB6000

moviNAND

Combining high-density MLC NAND flash with an MMC controller in a single chip that has an MMC interface, moviNAND delivers dense, cost-effective storage for embedded applications.
moviNAND Densities 1GB 2GB 4GB 8GB 16GB
Vol(V) 1.8/3.3 1.8/3.3 1.8/3.3 1.8/3.3 1.8/3.3
Package FBGA FBGA FBGA FBGA FBGA
Package Size 12.0x18x1.2t 12.0x18x1.2t 12.0x18x1.2t 12.0x18x1.3t 14.0x18.0

Org. x8 x8 x8 x8 x8

Please contact your local Samsung sales representative for latest product offerings. NOTE: All parts are lead free

OneDRAM

OneDRAM is a dual-port, low-power DRAM with an SRAM buffer interface and is optimal for high-performance, high-density mobile applications.

Package

Voltage (V) 1.8V

MOQ (Tray)

Remarks PKG Combination: 2G OneNAND + 512Mb MDDR + 512MB OneDRAM MCP P/N: KAC00F00JM PKG Combination: 2G NAND + 512Mb MDDR + 512Mb OneDRAM MCP P/N: KAR00900GM
KJA51Z23PC-AAO 512Mb KJA51Y23PC-AAO

SN-T083A [Slot-in Type] Optical Storage
- READ: MASTERED DISC, CD-R, CD-RW, DVD-ROM, DVD-R 3.95GB, DVD-R 4.7GB Authoring, DVD-R 4.7GB General, DVD-RW, DVD+R 4.7GB, DVD+R 8.5GB(Double-layer), DVD+RW 4.7GB, DVD-RAM 4.7GB - WRITE: DVD 4.7GB(DVDR, DVDRW, DVD-RAM), Double LayerR,CD-R, CD-RW
Data Transfer Rate MAX Media Type DVD+R DVD+RW DVD+R DUAL DVD-R DUAL DVD-R DVD-RW DVD-ROM (Single) DVD-ROM (Dual) CD-ROM CD-R US-RW HS-RW CD-RW DVD-RAM Data transfer mode Interface Buffer Memory Drive Install Form Size (W * H * L) Buffer Protection Lead Free Light Scribe Write 8X (10.8MB/sec) 8X (10.8MB/sec) 6X (8.1MB/sec) 6X (8.1MB/sec) 6X (8.1MB/sec) 6X (8.1MB/sec) 24X (3.6MB/sec) 24X (3.6MB/sec) 10X (1.5MB/sec) 4X (0.6MB/sec) 5X (6.75MB/sec) Read 8X (10.8MB/sec) 8X (10.8MB/sec) 6X (8.1MB/sec) 6X (8.1MB/sec) 8X (10.8MB/sec) 8X (10.8MB/sec) 8X (10.8MB/sec) 8X (10.8MB/sec) 24X (3.6MB/sec) 24X (3.6MB/sec) 24X (3.6MB/sec) 24X (3.6MB/sec) 24X (3.6MB/sec) 5X (6.75MB/sec)
Ultra DMA Mode 2: 33.3MB/sec, Multiword DMA mode2: 16.6MB/sec, PIO Mode 4: 16.7MB/sec Serial-ATA 2M Horizontal 128 (W) x 12.7 (H) x 127 (D) without Bezel yes yes no

SN-S083B Optical Storage

1. DISC TYPE - READ: MASTERED DISC, CD-R, CD-RW, DVD-ROM, DVD+R 4.7GB, DVD+R DL 8.5GB, DVD+RW 4.7GB, DVD-R 3.95GB, DVD-R 4.7GB Authoring, DVD-R 4.7GB General, DVD-R DL 8.5GB, DVD-RW, DVD-RAM 4.7GB - WRITE: DVD4.7GB(DVDR/RW, DVD-RAM), DVDR DL(8.5GB), CD-R/RW 2. DATA FORMAT: - CD: CD-DA, CD-ROM, MIXED-CD, CD-ROM XA, ENHANCED-CD, CD-EXTRA/CD+, Photo-CD, VIDEO-CD, CD-TEXT, CD-G, Multi-Session - DVD: DVD-RAM, DVD-ROM, DVD-VIDEO, Multi-Session(Read/Write), Multi-Border(Read/Write) 3. Recording mode - CD-R/RW: DAO, TAO, SAO, Packet Write(RW) - DVD+R/RW: Sequential, Random(RW) - DVD-R/RW: Incremental, DAO, Restricted Overwrite(RW) - DVD-RAM: Random
Data Transfer Rate MAX Media Type DVD+R DVD+RW DVD+R DUAL DVD-R DUAL DVD-R DVD-RW DVD-ROM (Single) DVD-ROM (Dual) CD-ROM CD-R US-RW HS-RW CD-RW DVD-RAM Access Time Data transfer mode Interface Buffer Memory Drive Install Form Size (W * H * L) Buffer Protection Lead Free Light Scribe Write 8X (10.8MB/sec) 8X (10.8MB/sec) 6X (8.1MB/sec) 6X (8.1MB/sec) 8X (10.8MB/sec) 6X (8.1MB/sec) 24X (3.6MB/sec) 24X (3.6MB/sec) 10X (1.5MB/sec) 4X (0.6MB/sec) 5X (6.75MB/sec) Read 8X (10.8MB/sec) 8X (10.8MB/sec) 6X (8.1MB/sec) 6X (8.1MB/sec) 8X (10.8MB/sec) 8X (10.8MB/sec) 8X (10.8MB/sec) 8X (10.8MB/sec) 24X (3.6MB/sec) 24X (3.6MB/sec) 24X (3.6MB/sec) 24X (3.6MB/sec) 24X (3.6MB/sec) 5X (6.75MB/sec)

Memory

DRAM Flash SRAM MCP Fusion

System LSI

ASICs APs Display Drivers Imaging ICs Foundry

Storage

Solid State Drives Hard Drives Optical Disc Drives

LCD Panels

TV Monitors Notebook PC Mobile
Samsung Semiconductor, Inc. 3655 North First Street San Jose, CA 95134-1713