STP6NA60 STP6NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

TYPE STP6NA60 STP6NA60FI

s s s s s s s

VDSS 600 V 600 V

R DS(on) < 1.2 < 1.2

ID 6.5 A 3.9 A

TYPICAL RDS(on) = 1 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220
DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS

Symbol Parameter

ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
Value STP6NA60 STP6NA60FI 30
V DS V DGR V GS ID ID I DM () P tot V ISO T stg Tj
Drain-source Voltage (V GS = 0) Drain-gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
V V V 3.9 2.45 0.A A A W W/ o C V

6.5 4.-65 to 150 150

() Pulse width limited by safe operating area

November 1996

STP6NA60/FI

THERMAL DATA

TO-220 R thj-case R thj-amb R t hc-sink Tl Thermal Resistance Junction-case Max 1 62.5 0.Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose ISOWATT220 2.78

C/W C/W C/W o C

AVALANCHE CHARACTERISTICS
Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , V DD = 50 V) Repetitive Avalanche Energy (pulse width limited by T j max, < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, < 1%) Max Value 6.9.5 4.3 Unit A mJ mJ A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbol V(BR)DSS I DS S I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A VGS = 0 Min. Typ. Max. Unit V A A nA
Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) V GS = 30 V

T c = 125 o C

Symbol V GS(th) R DS(on) I D(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance V GS = 10V Test Conditions I D = 250 A ID = 3 A 6.5 Min. 2.25 Typ. Max. 3.75 1.2 Unit V A
On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V

DYNAMIC

Symbol gfs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz ID = 3 A VGS = 0 Min. 3.5 Typ. 5.55 Max. Unit S pF pF pF
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol t d(on) tr (di/dt) on Parameter Turn-on Time Rise Time Turn-on Current Slope Test Conditions V DD = 300 V I D = 3 A R G = 47 VGS = 10 V (see test circuit, figure 3) V DD = 480 V I D = 6 A R G = 47 VGS = 10 V (see test circuit, figure 5) V DD = 480 V ID = 3 A V GS = 10 V Min. Typ. 200 Max. Unit ns ns A/s

Qg Q gs Q gd

Total Gate Charge Gate-Source Charge Gate-Drain Charge

nC nC nC

SWITCHING OFF
Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 480 V I D = 6 A R G = 47 VGS = 10 V (see test circuit, figure 5) Min. Typ. 115 Max. 155 Unit ns ns ns

SOURCE DRAIN DIODE

Symbol IS D I SDM () VS D () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 6.5 A V GS = I SD = 6 A di/dt = 100 A/s V DD = 100 V T j = 150 o C (see test circuit, figure 5) Test Conditions Min. Typ. Max. 6.1.6 Unit A A V ns C A
() Pulsed: Pulse duration = 300 s, duty cycle 1.5 % () Pulse width limited by safe operating area
Safe Operating Areas for TO-220
Safe Operating Areas for ISOWATT220
Thermal Impedeance For TO-220
Thermal Impedance For ISOWATT220
Derating Curve For TO-220
Derating Curve For ISOWATT220

Output Characteristics

Transfer Characteristics

Transconductance

Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage

Capacitance Variations

Normalized Gate Threshold Voltage vs Temperature
Normalized On Resistance vs Temperature

Turn-on Current Slope

Turn-off Drain-source Voltage Slope

Cross-over Time

Switching Safe Operating Area

Accidental Overload Area

Source-drain Diode Forward Characteristics
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time

TO-220 MECHANICAL DATA

DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107

Dia. L5 L7 L6 L4

ISOWATT220 MECHANICAL DATA
DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 28.6 9.8 15.3 4.4 2.5 2.5 0.4 0.75 1.15 1.15 4.95 2.16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.015 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409

L3 L6 L7

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

STP6NA60 STP6NA60FI

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

TYPE STP6NA60 STP6NA60FI

s s s s s s s

VDSS 600 V 600 V

R DS(on) < 1.2 < 1.2

ID 6.5 A 3.9 A

TYPICAL RDS(on) = 1 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220
DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS

Symbol

ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
V GS ID ID I DM () P tot V ISO T stg Tj
Drain-source Voltage (V GS = 0) Drain-gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature

(s) ct

so Ob -

Parameter STP6NA60

Value STP6NA60FI 30 6.5 4.-65 to 3.9 2.45 0.36 2000

V V V A A A W W/ o C V

() Pulse width limited by safe operating area

November 1996

STP6NA60/FI

THERMAL DATA

TO-220 R thj-case R thj-amb R t hc-sink Tl Thermal Resistance Junction-case Max 1 62.5 0.Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose ISOWATT220 2.78

C/W C/W C/W o C

AVALANCHE CHARACTERISTICS
Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , V DD = 50 V) Repetitive Avalanche Energy (pulse width limited by T j max, < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, < 1%) Max Value 6.9.5 4.3 Unit A mJ mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbol V(BR)DSS I DS S I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A VGS = 0
Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) V GS = 30 V
Symbol V GS(th) R DS(on) I D(on) Parameter
Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance

DYNAMIC

Symbol gfs () C iss C oss C rss

ete ol

On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V

T c = 125 o C

Min. 600

A Unit V A A nA

Test Conditions I D = 250 A ID = 3 A

Min. 2.25

Typ. 3 1

Max. 3.75 1.2

Unit V A

V GS = 10V

Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz ID = 3 A VGS = 0

Min. 3.5

Typ. 5.155 40

Unit S

pF pF pF
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol t d(on) tr (di/dt) on Parameter Turn-on Time Rise Time Turn-on Current Slope Test Conditions V DD = 300 V I D = 3 A R G = 47 VGS = 10 V (see test circuit, figure 3) V DD = 480 V I D = 6 A R G = 47 VGS = 10 V (see test circuit, figure 5) V DD = 480 V ID = 3 A V GS = 10 V Min. Typ. 200 Max. Unit ns ns A/s

Qg Q gs Q gd

Total Gate Charge Gate-Source Charge Gate-Drain Charge

nC nC nC

SWITCHING OFF
Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 480 V I D = 6 A R G = 47 VGS = 10 V (see test circuit, figure 5) Min. Typ. 115 Max. 155 Unit ns ns ns

SOURCE DRAIN DIODE

Symbol IS D I SDM () VS D () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 6.5 A Test Conditions
I SD = 6 A di/dt = 100 A/s V DD = 100 V T j = 150 o C (see test circuit, figure 5)
() Pulsed: Pulse duration = 300 s, duty cycle 1.5 % () Pulse width limited by safe operating area
Safe Operating Areas for TO-220

so Ob V GS = 0

Unit A A V ns C A

Max. 6.1.6

Safe Operating Areas for ISOWATT220
Thermal Impedeance For TO-220
Thermal Impedance For ISOWATT220
Derating Curve For TO-220
Derating Curve For ISOWATT220

Output Characteristics

Transfer Characteristics

Transconductance

Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage

Capacitance Variations

Normalized Gate Threshold Voltage vs Temperature
Normalized On Resistance vs Temperature

Turn-on Current Slope

Turn-off Drain-source Voltage Slope

Cross-over Time

Switching Safe Operating Area

Accidental Overload Area

Source-drain Diode Forward Characteristics
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time

TO-220 MECHANICAL DATA

DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 inch TYP. MAX. 0.181 0.051 0.107

L5 L7 L6

eP let
0.106 0.409 0.551 0.116 0.620 0.260 0.154 0.151
ISOWATT220 MECHANICAL DATA
DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 28.6 9.8 15.3 4.4 2.5 2.5 0.4 0.75 1.15 1.15 4.95 2.16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 mm TYP. MAX. 4.6 2.7 2.75 0.1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.015 0.030 0.045 0.045 0.195 0.094 0.393 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204

0.354 0.118

so Ob L3
0.106 0.409 1.204 0.417 0.645 0.366 0.126
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.